JPH0348665B2 - - Google Patents
Info
- Publication number
- JPH0348665B2 JPH0348665B2 JP58028732A JP2873283A JPH0348665B2 JP H0348665 B2 JPH0348665 B2 JP H0348665B2 JP 58028732 A JP58028732 A JP 58028732A JP 2873283 A JP2873283 A JP 2873283A JP H0348665 B2 JPH0348665 B2 JP H0348665B2
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- type
- region
- voltage
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58028732A JPS59152659A (ja) | 1983-02-21 | 1983-02-21 | 相補形ｍｏｓ回路素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58028732A JPS59152659A (ja) | 1983-02-21 | 1983-02-21 | 相補形ｍｏｓ回路素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59152659A JPS59152659A (ja) | 1984-08-31 |
| JPH0348665B2 true JPH0348665B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-07-25 |
Family
ID=12256603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58028732A Granted JPS59152659A (ja) | 1983-02-21 | 1983-02-21 | 相補形ｍｏｓ回路素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59152659A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009099679A (ja) * | 2007-10-15 | 2009-05-07 | Mitsumi Electric Co Ltd | Ｍｏｓトランジスタ及びこれを用いた半導体集積回路装置 |
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1983
- 1983-02-21 JP JP58028732A patent/JPS59152659A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59152659A (ja) | 1984-08-31 |