JPH0348662B2 - - Google Patents

Info

Publication number
JPH0348662B2
JPH0348662B2 JP58087893A JP8789383A JPH0348662B2 JP H0348662 B2 JPH0348662 B2 JP H0348662B2 JP 58087893 A JP58087893 A JP 58087893A JP 8789383 A JP8789383 A JP 8789383A JP H0348662 B2 JPH0348662 B2 JP H0348662B2
Authority
JP
Japan
Prior art keywords
diode
input
type
conductivity type
type region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58087893A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59213155A (ja
Inventor
Masaya Iio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58087893A priority Critical patent/JPS59213155A/ja
Publication of JPS59213155A publication Critical patent/JPS59213155A/ja
Publication of JPH0348662B2 publication Critical patent/JPH0348662B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP58087893A 1983-05-17 1983-05-17 半導体集積回路装置 Granted JPS59213155A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58087893A JPS59213155A (ja) 1983-05-17 1983-05-17 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58087893A JPS59213155A (ja) 1983-05-17 1983-05-17 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS59213155A JPS59213155A (ja) 1984-12-03
JPH0348662B2 true JPH0348662B2 (enrdf_load_stackoverflow) 1991-07-25

Family

ID=13927559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58087893A Granted JPS59213155A (ja) 1983-05-17 1983-05-17 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS59213155A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6213006B2 (ja) * 2013-07-19 2017-10-18 富士通セミコンダクター株式会社 半導体装置
CN115356606B (zh) * 2022-08-03 2025-04-29 北京芯可鉴科技有限公司 隔离器件耐压测试的装置、制造方法及耐压测试的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4975280A (enrdf_load_stackoverflow) * 1972-11-24 1974-07-19
JPS4982279A (enrdf_load_stackoverflow) * 1972-12-11 1974-08-08
JPS5879735A (ja) * 1981-11-06 1983-05-13 Nec Corp 半導体集積回路

Also Published As

Publication number Publication date
JPS59213155A (ja) 1984-12-03

Similar Documents

Publication Publication Date Title
JPS6358380B2 (enrdf_load_stackoverflow)
JP3418436B2 (ja) パワートランジスタ
JPH0669501A (ja) 集積回路における静電的放電に対してパッドを保護するためのダイオード構造
JPH0324791B2 (enrdf_load_stackoverflow)
JPH0666402B2 (ja) 半導体集積回路装置の入力保護回路
JPH03224263A (ja) Ｃｍｏｓ集積回路の静電放電保護構造
JP4696356B2 (ja) 半導体装置
JPH0348662B2 (enrdf_load_stackoverflow)
US6320229B1 (en) Semiconductor device
JPH08321588A (ja) 静電気放電保護回路
US5880514A (en) Protection circuit for semiconductor device
JPH04363068A (ja) 半導体装置
JPH0478162A (ja) 集積回路用保護装置
JPS6257250A (ja) 半導体装置
JPH11168181A (ja) 静電放電の保護回路、これを備えるトランジスタおよび半導体素子
CN208173586U (zh) 半导体装置
KR950005470B1 (ko) 정전기특성이 개선된 반도체장치
JPS63301555A (ja) 半導体装置
JP2650180B2 (ja) ２方向性２端子サイリスタ
JPH0478018B2 (enrdf_load_stackoverflow)
JPS59132673A (ja) Ｍｏｓトランジスタ
JP2830092B2 (ja) 半導体装置の静電保護素子
JPH04162681A (ja) 半導体装置
JPS60123070A (ja) 半導体装置
JPS6335112B2 (enrdf_load_stackoverflow)