JPH0346969B2 - - Google Patents
Info
- Publication number
- JPH0346969B2 JPH0346969B2 JP57116711A JP11671182A JPH0346969B2 JP H0346969 B2 JPH0346969 B2 JP H0346969B2 JP 57116711 A JP57116711 A JP 57116711A JP 11671182 A JP11671182 A JP 11671182A JP H0346969 B2 JPH0346969 B2 JP H0346969B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- photoresist film
- exposure energy
- exposure
- determined
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 155
- 238000011161 development Methods 0.000 claims description 57
- 238000004364 calculation method Methods 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 36
- 238000012937 correction Methods 0.000 claims description 7
- 239000010408 film Substances 0.000 description 105
- 239000003504 photosensitizing agent Substances 0.000 description 34
- 230000003287 optical effect Effects 0.000 description 22
- 238000002834 transmittance Methods 0.000 description 22
- 238000010586 diagram Methods 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 12
- 238000004886 process control Methods 0.000 description 9
- 238000001035 drying Methods 0.000 description 7
- 206010034972 Photosensitivity reaction Diseases 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 230000036211 photosensitivity Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000001427 coherent effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000010349 pulsation Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57116711A JPS597953A (ja) | 1982-07-07 | 1982-07-07 | フォトレジストプロセスにおける露光エネルギ決定方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57116711A JPS597953A (ja) | 1982-07-07 | 1982-07-07 | フォトレジストプロセスにおける露光エネルギ決定方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS597953A JPS597953A (ja) | 1984-01-17 |
| JPH0346969B2 true JPH0346969B2 (enrdf_load_stackoverflow) | 1991-07-17 |
Family
ID=14693917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57116711A Granted JPS597953A (ja) | 1982-07-07 | 1982-07-07 | フォトレジストプロセスにおける露光エネルギ決定方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS597953A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61100754A (ja) * | 1984-10-23 | 1986-05-19 | Fujitsu Ltd | 適正露光時間の検出方法 |
| JPH0797549B2 (ja) * | 1987-08-28 | 1995-10-18 | 東京エレクトロン九州株式会社 | 露光方法及びその装置 |
| JP5867822B2 (ja) | 2012-03-19 | 2016-02-24 | スズキ株式会社 | 変速機のリバースアイドラ軸支持構造 |
-
1982
- 1982-07-07 JP JP57116711A patent/JPS597953A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS597953A (ja) | 1984-01-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100197191B1 (ko) | 레지스트 패턴 형성방법 | |
| TW201109846A (en) | Using electric-field directed post-exposure bake for double patterning (D-P) | |
| US11429027B2 (en) | Photolithography method and apparatus | |
| US5556726A (en) | Photolithographic dose determination by diffraction of latent image grating | |
| TWI604277B (zh) | 使用圖案化裝置形貌誘導相位之方法及設備 | |
| US7238454B2 (en) | Method and apparatus for producing a photomask blank, and apparatus for removing an unnecessary portion of a film | |
| TW201632984A (zh) | 使用圖案化裝置形貌誘導相位之方法及設備 | |
| TWI636317B (zh) | 使用圖案化裝置形貌誘導相位之方法、非暫時性電腦程式產品及製造半導體裝置之方法 | |
| JP3287017B2 (ja) | 結像特性の測定方法 | |
| JPH08250411A (ja) | レジストの吸収光量分布評価方法及びシステム | |
| US4891094A (en) | Method of optimizing photoresist contrast | |
| JPH0346969B2 (enrdf_load_stackoverflow) | ||
| JPH0423816B2 (enrdf_load_stackoverflow) | ||
| JPH0242214B2 (enrdf_load_stackoverflow) | ||
| TW202318113A (zh) | 聚焦度量衡之方法及其相關設備 | |
| Flack et al. | Advanced simulation techniques for thick photoresist lithography | |
| Thane et al. | Lithographic effects of metal reflectivity variations | |
| JP3115517B2 (ja) | レジストパターン形成方法 | |
| US20220365438A1 (en) | Photolithography method and apparatus | |
| JP2538935B2 (ja) | レジスト現像方法 | |
| JP2001035779A (ja) | 微細パターンの形成方法 | |
| JPH0346968B2 (enrdf_load_stackoverflow) | ||
| JPH06216068A (ja) | フォトレジストパターンの形成方法 | |
| JPH0425694B2 (enrdf_load_stackoverflow) | ||
| JPH0281048A (ja) | パターン形成方法及びその材料 |