TW202425087A - 製造半導體元件的方法 - Google Patents

製造半導體元件的方法 Download PDF

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Publication number
TW202425087A
TW202425087A TW112148605A TW112148605A TW202425087A TW 202425087 A TW202425087 A TW 202425087A TW 112148605 A TW112148605 A TW 112148605A TW 112148605 A TW112148605 A TW 112148605A TW 202425087 A TW202425087 A TW 202425087A
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Taiwan
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semiconductor device
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manufacturing semiconductor
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TW112148605A
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English (en)
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朴炳善
尹詳皓
鄭宇陳
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南韓商三星電子股份有限公司
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Publication of TW202425087A publication Critical patent/TW202425087A/zh

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Abstract

本發明提供一種製造半導體元件的方法，方法包含：在晶圓上形成堆疊，其中堆疊包含堆疊的多個層；在堆疊上形成光阻圖案；判定堆疊的多個層當中的至少一個層的材料是否已改變，以及用於形成堆疊的多個層的多個製程當中的至少一個製程是否已改變；當判定至少一個層的材料或至少一個製程已改變時，改變用於疊對量測的第一波長；以及使用已改變的用於疊對量測的第一波長來量測疊對。
TW112148605A 2022-12-14 2023-12-13 製造半導體元件的方法 TW202425087A (zh)

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KR10-2022-0174542 2022-12-14

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TW202425087A true TW202425087A (zh) 2024-06-16

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