JPH034620B2 - - Google Patents
Info
- Publication number
- JPH034620B2 JPH034620B2 JP56099659A JP9965981A JPH034620B2 JP H034620 B2 JPH034620 B2 JP H034620B2 JP 56099659 A JP56099659 A JP 56099659A JP 9965981 A JP9965981 A JP 9965981A JP H034620 B2 JPH034620 B2 JP H034620B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic pole
- target
- pole body
- plasma generation
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004544 sputter deposition Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 17
- 230000004907 flux Effects 0.000 claims description 13
- 230000000737 periodic effect Effects 0.000 claims description 5
- 239000000696 magnetic material Substances 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 230000002194 synthesizing effect Effects 0.000 claims description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims 2
- 239000010408 film Substances 0.000 description 89
- 238000009826 distribution Methods 0.000 description 65
- 239000000758 substrate Substances 0.000 description 30
- 230000003628 erosive effect Effects 0.000 description 25
- 238000010586 diagram Methods 0.000 description 15
- 230000008859 change Effects 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000013077 target material Substances 0.000 description 9
- 230000005284 excitation Effects 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011796 hollow space material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000013598 vector Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002902 bimodal effect Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004033 diameter control Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9965981A JPS583975A (ja) | 1981-06-29 | 1981-06-29 | スパツタリングによる成膜方法及びその装置 |
| US06/343,858 US4401539A (en) | 1981-01-30 | 1982-01-29 | Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9965981A JPS583975A (ja) | 1981-06-29 | 1981-06-29 | スパツタリングによる成膜方法及びその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS583975A JPS583975A (ja) | 1983-01-10 |
| JPH034620B2 true JPH034620B2 (ko) | 1991-01-23 |
Family
ID=14253168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9965981A Granted JPS583975A (ja) | 1981-01-30 | 1981-06-29 | スパツタリングによる成膜方法及びその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS583975A (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8402012A (nl) * | 1983-07-19 | 1985-02-18 | Varian Associates | Magnetron spetter deklaag opbrengbron voor zowel magnetische als niet-magnetische trefplaatmaterialen. |
| JPS61201773A (ja) * | 1985-03-04 | 1986-09-06 | Showa Denko Kk | スパツタリング方法及びその装置 |
| JPH0726202B2 (ja) * | 1985-12-17 | 1995-03-22 | ローム株式会社 | マグネトロンスパッタにおける膜厚調整方法 |
| JPS63140078A (ja) * | 1986-11-29 | 1988-06-11 | Tokyo Electron Ltd | スパツタリングによる成膜方法 |
| JP7262886B2 (ja) | 2017-07-21 | 2023-04-24 | 朝日インテック株式会社 | 超小型高感度磁気センサ |
| KR102420329B1 (ko) * | 2018-02-13 | 2022-07-14 | 한국알박(주) | 마그네트론 스퍼터링 장치의 자석 집합체 |
| CN111394707B (zh) * | 2020-03-31 | 2023-05-09 | 北京大学深圳研究生院 | 一种等离子体源及其用于镀膜的装置、系统和方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5611682A (en) * | 1979-07-10 | 1981-02-05 | Nippon Telegr & Teleph Corp <Ntt> | Matrix memory circuit using mis field effect transistor |
-
1981
- 1981-06-29 JP JP9965981A patent/JPS583975A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5611682A (en) * | 1979-07-10 | 1981-02-05 | Nippon Telegr & Teleph Corp <Ntt> | Matrix memory circuit using mis field effect transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS583975A (ja) | 1983-01-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
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