JPH0345479B2 - - Google Patents

Info

Publication number
JPH0345479B2
JPH0345479B2 JP60284013A JP28401385A JPH0345479B2 JP H0345479 B2 JPH0345479 B2 JP H0345479B2 JP 60284013 A JP60284013 A JP 60284013A JP 28401385 A JP28401385 A JP 28401385A JP H0345479 B2 JPH0345479 B2 JP H0345479B2
Authority
JP
Japan
Prior art keywords
memory
row
column
memory cells
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60284013A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62143295A (ja
Inventor
Hiroshi Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP60284013A priority Critical patent/JPS62143295A/ja
Publication of JPS62143295A publication Critical patent/JPS62143295A/ja
Publication of JPH0345479B2 publication Critical patent/JPH0345479B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
JP60284013A 1985-12-17 1985-12-17 半導体メモリ Granted JPS62143295A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60284013A JPS62143295A (ja) 1985-12-17 1985-12-17 半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60284013A JPS62143295A (ja) 1985-12-17 1985-12-17 半導体メモリ

Publications (2)

Publication Number Publication Date
JPS62143295A JPS62143295A (ja) 1987-06-26
JPH0345479B2 true JPH0345479B2 (enrdf_load_stackoverflow) 1991-07-11

Family

ID=17673164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60284013A Granted JPS62143295A (ja) 1985-12-17 1985-12-17 半導体メモリ

Country Status (1)

Country Link
JP (1) JPS62143295A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2594638B2 (ja) * 1989-02-09 1997-03-26 富士通株式会社 半導体記憶装置
JP5092938B2 (ja) * 2008-06-30 2012-12-05 富士通セミコンダクター株式会社 半導体記憶装置及びその駆動方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5452431A (en) * 1977-10-04 1979-04-25 Toshiba Corp Semiconductor memory device
JPS583187A (ja) * 1981-06-30 1983-01-08 Fujitsu Ltd 半導体記憶装置
JPS5873093A (ja) * 1981-10-27 1983-05-02 Nec Corp 半導体メモリ−

Also Published As

Publication number Publication date
JPS62143295A (ja) 1987-06-26

Similar Documents

Publication Publication Date Title
US4389705A (en) Semiconductor memory circuit with depletion data transfer transistor
US4737936A (en) Semiconductor memory device having improved write-verify operation
EP0297518A1 (en) Programmable read only memory with means for discharging bit line before program verifying operation
JP2586722B2 (ja) 半導体記憶装置
US4982363A (en) Sensing structure for single ended input
US4393472A (en) Semiconductor memory circuit
US4631707A (en) Memory circuit with power supply voltage detection means
US4893276A (en) Output circuit of a static random access memory circuit
EP0212665B1 (en) Sense amplifier for static memory
US4374430A (en) Semiconductor PROM device
US5157631A (en) Random access memory device with dual charging circuits different in current driving capability
EP0155709B1 (en) Integrated circuit comprising field effect transistors and a programmable read-only memory
US4520463A (en) Memory circuit
US4122548A (en) Memory storage array with restore circuit
US5038327A (en) Decoder circuit of erasable programmable read only memory for avoiding erroneous operation caused by parasitic capacitors
US4198700A (en) Column decode circuit for random access memory
EP0055582B1 (en) Memory circuit having a decoder
JPH07169290A (ja) 半導体記憶装置
GB2200265A (en) Current limited epld array
KR100210627B1 (ko) 반도체 메모리 장치
JPH0345479B2 (enrdf_load_stackoverflow)
US4899309A (en) Current sense circuit for a ROM system
KR930008413B1 (ko) 반도체기억장치
JPH0766675B2 (ja) プログラマブルrom
JPH0361280B2 (enrdf_load_stackoverflow)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term