JPH0344855U - - Google Patents
Info
- Publication number
- JPH0344855U JPH0344855U JP10569589U JP10569589U JPH0344855U JP H0344855 U JPH0344855 U JP H0344855U JP 10569589 U JP10569589 U JP 10569589U JP 10569589 U JP10569589 U JP 10569589U JP H0344855 U JPH0344855 U JP H0344855U
- Authority
- JP
- Japan
- Prior art keywords
- container
- plasma
- sputter
- ion source
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 2
Landscapes
- Electron Sources, Ion Sources (AREA)
Description
第１図はこの考案の実施例を示す断面図である
。
１……スパツタ・ターゲツト、２……セシウム
・リザーバー、３……フイラメント、５……容器
、１４……加熱源。
FIG. 1 is a sectional view showing an embodiment of this invention. 1... Sputter target, 2... Cesium reservoir, 3... Filament, 5... Container, 14... Heat source.
Claims (1)
ツタ・ターゲツトおよび前記スパツタ・ターゲツ
トをスパツタするプラズマを生成するフイラメン
トを容器内に備えてなるプラズマスパツタ型負イ
オン源において、 前記容器の下部にたまるセシウムを蒸発させる
ように加熱する加熱源を、前記容器の下部に設け
てなるプラズマスパツタ型負イオン源。[Claims for Utility Model Registration] A plasma sputter type negative ion source comprising a sputter target that supplies elements to be extracted as negative ions and a filament that generates plasma that sputters the sputter target in a container, A plasma sputter type negative ion source comprising a heating source provided at the bottom of the container for heating so as to evaporate cesium accumulated at the bottom of the container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989105695U JPH0722843Y2 (en) | 1989-09-08 | 1989-09-08 | Plasma sputter type negative ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989105695U JPH0722843Y2 (en) | 1989-09-08 | 1989-09-08 | Plasma sputter type negative ion source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0344855U true JPH0344855U (en) | 1991-04-25 |
| JPH0722843Y2 JPH0722843Y2 (en) | 1995-05-24 |
Family
ID=31654456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989105695U Expired - Fee Related JPH0722843Y2 (en) | 1989-09-08 | 1989-09-08 | Plasma sputter type negative ion source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0722843Y2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4915899A (en) * | 1972-06-08 | 1974-02-12 | ||
| JPS5842149A (en) * | 1981-09-04 | 1983-03-11 | Jeol Ltd | Cesium ion source |
| JPS5971235A (en) * | 1982-10-15 | 1984-04-21 | Hitachi Ltd | Ion source |
-
1989
- 1989-09-08 JP JP1989105695U patent/JPH0722843Y2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4915899A (en) * | 1972-06-08 | 1974-02-12 | ||
| JPS5842149A (en) * | 1981-09-04 | 1983-03-11 | Jeol Ltd | Cesium ion source |
| JPS5971235A (en) * | 1982-10-15 | 1984-04-21 | Hitachi Ltd | Ion source |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0722843Y2 (en) | 1995-05-24 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |