JPH0342822A - Ion implantation of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent electrification breakdown and deterioration of a semiconductor device due to local electrification by performing ion implantation after providing a conductive material on a semiconductor substrate. CONSTITUTION:A conductive material 2 is provided on a semiconductor substrate 3. Ion implantation is performed through a pattern formation process by that pattern formation material 1. It is not limited by the structure within a semiconductor substrate but can be applied to a semiconductor with any structure. Thus, by a simple method for providing a conductive material on the semiconductor substrate, it is possible to prevent electrification breakdown and deterioration due to local electrification at the ion implantation process, thus improving the yield and quality of a semiconductor device.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to an ion implantation method for a semiconductor device.

[Summary of the invention]

In the ion implantation process of a semiconductor device, the present invention prevents destruction of the semiconductor device by providing a conductive material on a semiconductor substrate and then implanting ions.

[Conventional technology]

Conventionally, a method has been used in which ions are implanted after providing a pattern forming material 1 on a semiconductor substrate 3, as shown in FIG. 7, or a method in which ions are directly implanted into the semiconductor substrate 3.

[Problem to be solved by the invention]

However, in the conventional method, ions are implanted into a semiconductor substrate provided with an insulating film or a pattern forming material with poor conductivity, so charging due to the ion beam occurs near the surface of the semiconductor device. However, there is a drawback in that the semiconductor device is destroyed and deteriorated due to the discharge of the charged charges (hereinafter abbreviated as "charged destruction/deterioration").

Therefore, in order to solve these conventional drawbacks, it is an object of the present invention to provide a semiconductor device that does not suffer from electrostatic breakdown or deterioration.

(Means for solving the Lf! problem) In order to solve the above problem, the present invention prevents charging breakdown deterioration in the ion implantation process by providing a step of providing a conductive material on the semiconductor substrate in the previous step. I did it like that.

[Effect]

By the above method, since the ion beam flows smoothly through the conductive material provided on the rtI particle conductor substrate, charging damage to the semiconductor device due to local charging can be avoided.
This makes it possible to prevent deterioration.

〔Example〕

Embodiments of the present invention will be described below based on the drawings. FIG. 1 shows a first embodiment in which a conductive material 2 is provided on a semiconductor substrate 3, and then ion implantation is performed through a pattern forming process using a pattern forming material 1. FIG. 2 shows a second embodiment. FIG. 3 shows a third embodiment in which a pattern is formed on a semiconductor substrate 3 using a pattern forming material 1, and then ion implantation is performed after a step of forming a conductive material 2. FIG. 4 shows a fourth embodiment in which ion implantation is performed after forming a conductive material 2 on a semiconductor substrate 3, in which a conductive material 2 that can be patterned is formed on a semiconductor substrate 3. Pattern formation using the sexual n material 4,
Ion implantation is performed through a process. FIG. 5 shows a fifth embodiment, in which a pattern is formed on a semiconductor substrate 3 using a conductive material 4 that can be patterned, and then a conductive material 4 is formed on the semiconductor substrate 3.
FIG. 6 shows a sixth embodiment in which ion implantation is performed after forming a pattern on a semiconductor substrate 3 using a conductive material 4 that can be patterned.

Note that the above description is not limited to the structure within the semiconductor substrate, and it goes without saying that it can be applied to a semiconductor substrate having any structure.

〔Effect of the invention〕

As explained above, this invention uses a simple method of providing a conductive material on a semiconductor substrate to prevent charging breakdown and deterioration due to local charging during the ion implantation process, and improve the yield and quality of semiconductor devices. It has the effect of

[Brief explanation of drawings]

FIG. 1 is an explanatory diagram showing a first embodiment of this invention, FIG. 2 is an explanatory diagram showing a second embodiment of this invention, and FIG. 3 is an explanatory diagram showing a third embodiment of this invention. , FIG. 4 is a diagram showing a fourth embodiment of this invention, FIG. 5 is an explanatory diagram showing a fifth embodiment of this invention, and FIG. 6 is an explanatory diagram showing a sixth embodiment of this invention. , FIG. 7 is a diagram illustrating a conventional ion implantation method. 1... Pattern forming material 2... Conductive material 3... Semiconductor substrate 4... Conductive material that can be patterned

Claims (1)

[Claims] An ion implantation method for a semiconductor device, the method comprising the step of providing a conductive material on a semiconductor substrate as a pre-step.