JPH0341716A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH0341716A
JPH0341716A JP17681489A JP17681489A JPH0341716A JP H0341716 A JPH0341716 A JP H0341716A JP 17681489 A JP17681489 A JP 17681489A JP 17681489 A JP17681489 A JP 17681489A JP H0341716 A JPH0341716 A JP H0341716A
Authority
JP
Japan
Prior art keywords
wafer
resist
resin
frame
resist film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17681489A
Other languages
Japanese (ja)
Inventor
Koji Tanaka
康治 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17681489A priority Critical patent/JPH0341716A/en
Publication of JPH0341716A publication Critical patent/JPH0341716A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To prevent the formation of a resist film on the peripheral part of a wafer and the rear surface of the wafer by forming a frame part comprising coarse-oil resin at the peripheral part of the wafer, and applying resist on the surface of the wafer on which the frame part is formed. CONSTITUTION:A resin 12 is injected through a resin injecting port 11 of an top force 9. A frame part 7 comprising a resin is formed in a doughnut shape so as to cover the peripheral part of a wafer 6. Resist 8 which is dropped on the central part spreads in a concentric circle pattern to the peripheral part by centrifugal force when a wafer sucking pipe 1 is rotated. Since the resist 8 at the lower layer stops at the sidewall of the frame part 7, a resist film is not formed at the peripheral part of the wafer. Meanwhile, the resist 8 at the upper layer spreads on the surface of the frame part 7. Since said part is formed with coarse-oil resin 12, however, the resist does not come into contact with the frame part 7 tightly. The resist 8 is repelled and splashed away.

Description

【発明の詳細な説明】 〔概 要〕 半導体装置の製造方法に関し、更に訂しく5えば、ウニ
へ上にレジスト膜を形成する方法に関し、ウェハ周辺部
及びウェハ裏面にレジス)IFJが形成されるのを防止
することができるレジスト膜の形成方法を提供すること
を目的とし、 ウェハ園辺部に疎油性の樹脂からなる19部を形成する
工程と、前記枠部の形成されたウェハ表面にレジストを
塗布する工程とを含み構成する。
[Detailed Description of the Invention] [Summary] This invention relates to a method of manufacturing a semiconductor device, more specifically, to a method of forming a resist film on a wafer, in which a resist (IFJ) is formed on the periphery of the wafer and on the back surface of the wafer. The purpose of the present invention is to provide a method for forming a resist film that can prevent the formation of a resist film. The method includes a step of applying .

(産業上の利用分野J 本発明は、半導体装置の!!!遣方法に関し、更に詳し
く言えば、ウェハ上にレジスト11Δを形成する方法に
関する。
(Industrial Field of Application J) The present invention relates to a method of manufacturing a semiconductor device, and more specifically, to a method of forming a resist 11Δ on a wafer.

〔従来の技術) 第5図(a)、(b)は、従来例の回転塗布装置を用い
たレジスl布方法を説f9(する斜視図である。
[Prior Art] FIGS. 5(a) and 5(b) are perspective views explaining a resist cloth method using a conventional rotary coating device.

同図(a)はレジスt4布前の状態を示し、図中符号I
はウェハ吸引管、2はウェハ、3はレジストである。
The same figure (a) shows the state before the resist t4 cloth, and the symbol I in the figure shows the state before the resist t4 cloth.
2 is a wafer suction tube, 2 is a wafer, and 3 is a resist.

まず、ウェハを吸引管lに載置・吸引して固定した後、
ウェハ吸引管1を回転させると、レジスト3はウェハ2
上に均一に広がっていく。
First, after placing the wafer in the suction tube l and fixing it by suction,
When the wafer suction tube 1 is rotated, the resist 3 is transferred to the wafer 2.
Spread evenly over the top.

その後、所定時間の経過の後回転を止めると、同図(b
)に示すように、ウェハ2表面には薄いレジスト膜3a
が形成される。
After that, when the rotation is stopped after a predetermined period of time has elapsed, the same figure (b)
), a thin resist film 3a is formed on the surface of the wafer 2.
is formed.

(発明が解決しようとする!!!fl)しかし上述の従
来方法によると、第6図(a)に示すように、ウェハ2
の周辺部では形状効果によりレジスト膜3aの膜厚が厚
くなる。そして、この膜厚の変動がウェハの内部まで影
響するため、レジス)lI93aのバターニングの際、
露光不足によるバターニング不良が発生し歩留り低下を
招くという問題がある。
(The invention attempts to solve this problem!!!fl) However, according to the above-mentioned conventional method, as shown in FIG. 6(a), the wafer 2
The thickness of the resist film 3a becomes thicker in the peripheral area due to the shape effect. Since this variation in film thickness affects the inside of the wafer, when patterning the resist 1I93a,
There is a problem in that defective patterning occurs due to insufficient exposure, leading to a decrease in yield.

また、レジスト3の塗布中、レジスト3はウェハ2表面
に密着して広がっていき、ウェハ2周辺部を伝ってウェ
ハ端部から裏面にかけてレジスト3が回り込む、このた
め、レジスト123aのバターニング後、次の工程に移
るための搬送中や処理中にこの部分に残存したレジスト
膜3aがウェハ保持具などと接触して剥がれ、ウェハ2
上に塵となって付着し、歩留り低下の原因となるという
問題がある。
Furthermore, during the application of the resist 3, the resist 3 spreads in close contact with the surface of the wafer 2, and the resist 3 wraps around the wafer 2 from the edge to the back surface along the periphery of the wafer 2. Therefore, after patterning the resist 123a, During transportation or processing for moving on to the next process, the resist film 3a remaining in this area comes into contact with a wafer holder and peels off, causing the wafer 2
There is a problem in that it becomes dust and adheres to the surface, causing a decrease in yield.

この問題を解決するため、ウェハ周辺部のレジスト膜を
除去している。即ち、同図(b)、(c)に示すように
、レジスト剥離液Iをウェハ周辺部や裏面に散布してレ
ジストを除去している。
To solve this problem, the resist film around the wafer is removed. That is, as shown in FIGS. 4(b) and 4(c), resist stripping liquid I is sprayed on the periphery and back surface of the wafer to remove the resist.

また、同図(d)に示すように、周辺部や裏面のレジス
ト1模3aにのみ露光して現像fi5に浸漬することに
より、この部分のレジスト膜3aを除去している。
In addition, as shown in FIG. 3D, only the peripheral part and the back surface of the resist 1 pattern 3a are exposed and immersed in the developing fi5, thereby removing the resist film 3a in these parts.

しかし、レジスト膜のパクーニング毎にこの作業を行う
必要があるので、多大な工数を要し、スループ7トの低
下を招くという問題がある。
However, since it is necessary to carry out this operation every time the resist film is parsed, there is a problem that a large number of man-hours are required and the throughput is reduced.

そこで本発明は、かかる従来例の間刷点に鑑みて創作さ
れたものであり、ウェハ周辺部及びウェハ裏面にレジス
ト膜が形成されるのを防とすることができるレジストI
&fの形成方法を提(」(することを目的とするもので
ある。
Therefore, the present invention was created in view of the above-mentioned interprinting problems of the conventional example, and provides a resist I that can prevent the formation of a resist film on the periphery of the wafer and the back surface of the wafer.
The purpose of this paper is to present a method for forming &f.

(Ll!題を解決するための手段〕 上記課題は、ウェハ周辺部に疎油性の樹脂からなる枠部
を形成する工程と、前記枠部の形成されたウェハ表面に
レジストを塗布する工程とを有することを特徴とする半
導体装置の製造方法によって達成される。
(Means for Solving Problem Ll!) The above problem consists of a step of forming a frame made of an oleophobic resin around the wafer, and a step of applying a resist to the wafer surface on which the frame is formed. This is achieved by a method of manufacturing a semiconductor device characterized by having the following characteristics.

〔作 用〕[For production]

本発明の半導体装置の製造方法によれば、ウェハ周辺部
に疎油性の樹脂からなる枠部を形成しているので、例え
ば、回転塗布装置によってレジストを塗布する際、遠心
力により広がりつつある下層のレジストは樹脂枠部でと
まり、レジスト膜はウェハ周辺部には形成されない、一
方、上層のレジストは461脂枠部の表面にも広がるが
、この部分は疎油性の樹脂で形成されているので、レジ
ストは枠部に密着せずにはじかれてウェハ端部から飛散
する。
According to the method for manufacturing a semiconductor device of the present invention, since a frame made of an oleophobic resin is formed around the wafer, for example, when a resist is applied using a spin coating device, the lower layer is spread out due to centrifugal force. The resist of 461 is stopped at the resin frame and no resist film is formed around the wafer.On the other hand, the upper layer of resist spreads to the surface of the 461 resin frame, but this part is made of oleophobic resin. , the resist does not come into close contact with the frame and is repelled and scattered from the edge of the wafer.

このように、第1に、形状効果によりレジスト膜厚が淳
くなるウェハ周辺部にレジスト膜が形成されないように
しているので、レジスト膜厚はウェハ全体に均一に形成
される。このため、ウェハ全体にわたり必要にして十分
に露光が行われるので、バターニング不良が減少し、歩
留り向上を図ることが出来る。
In this way, first, the resist film is prevented from being formed in the periphery of the wafer where the resist film thickness becomes thinner due to shape effects, so that the resist film thickness is uniform over the entire wafer. Therefore, sufficient exposure is performed over the entire wafer, reducing patterning defects and improving yield.

第2に、レジストは枠部に’PGHせずにはじかれてウ
ェハ端部から飛散するので、ウェハ周辺部を伝ってウェ
ハ裏面にレジストが回り込むことはない。
Secondly, the resist is not 'PGHed' by the frame but is repelled and scattered from the edge of the wafer, so that the resist does not run around the wafer periphery to the back surface of the wafer.

また、高温での熱処理や枠部の樹脂をおかす薬液処理を
行う工程以降に適用すれば、この枠部を形成抜取り除く
ことなく、そのままの状態で、レジスト膜のバターニン
グの際に何度でも使用できる。これにより、従来のよう
にレジスト膜のパターユング工程毎にウェハ周辺部や裏
面のレジスト膜を除去する必要がなくなり、スループッ
トの向上を図ることができる。
In addition, if applied after the process of high-temperature heat treatment or chemical treatment that burns the resin on the frame, this frame can be used as is during patterning of the resist film without having to remove it. Can be used. This eliminates the need to remove the resist film on the periphery of the wafer and on the back surface each time the resist film is patterned, unlike the conventional method, and it is possible to improve throughput.

〔実施例〕〔Example〕

以下、本発明の実施例について図を参照しながら説明す
る。
Embodiments of the present invention will be described below with reference to the drawings.

第1図(a)〜(r)は、本発明の実施例のレジストn
2の形成方法を説明する図である。
FIGS. 1(a) to 1(r) show resist n of examples of the present invention.
FIG. 2 is a diagram illustrating a method of forming No. 2;

同図(a)は、不図示の治間絶縁11Δを堆積後、層間
絶縁膜をバターニングするため、レジストを塗布する曲
のウェハの断面図で、同図(b)は同じく上面図である
。同図において、6はレジストの塗布されるウェハであ
る。
Figure (a) is a cross-sectional view of a wafer on which a resist is applied to pattern the interlayer insulation film after depositing interlayer insulation 11Δ (not shown), and figure (b) is a top view of the wafer. . In the figure, 6 is a wafer to which a resist is applied.

まず、このウェハ6の周辺部に樹脂枠部を形成するため
、ウェハをモールディング装置にセットする。
First, in order to form a resin frame around the periphery of the wafer 6, the wafer is set in a molding device.

第2図は、このようなモールディング装置の断面図で、
図中符号9は上型、lOは下型、11は樹脂注入口で、
エア抜きの働きもしている。また、12は注入された疎
泊性の樹脂で、フッ素系の熱重合モノマー、例えば2.
2.2−)リフルオロエチルメタクリレートやトリフル
オロメチルメタクリレート等のアクリル樹脂モノマーが
用いられる。更に、13はウェハ6を吸引・固定するた
めの吸引口である。
FIG. 2 is a cross-sectional view of such a molding device.
In the figure, 9 is the upper mold, IO is the lower mold, 11 is the resin injection port,
It also works to bleed air. Further, 12 is an injected hydrophobic resin, which is a fluorine-based thermally polymerizable monomer, such as 2.
2.2-) Acrylic resin monomers such as trifluoroethyl methacrylate and trifluoromethyl methacrylate are used. Furthermore, 13 is a suction port for suctioning and fixing the wafer 6.

同図に示すように、上型9の樹脂注入口11より樹脂!
2を注入して、ウェハ6周辺部を被償するようにドーナ
ツ状に、厚さ約5μm、幅30程度の樹脂からなる枠部
7を形成する(第1図(c)、(d))。
As shown in the figure, resin is injected from the resin injection port 11 of the upper mold 9!
2 is injected to form a donut-shaped frame 7 made of resin with a thickness of about 5 μm and a width of about 30 mm so as to cover the peripheral area of the wafer 6 (FIGS. 1(c) and (d)). .

その後、温度150℃で樹j112を硬化する。Thereafter, the wood j112 is hardened at a temperature of 150°C.

次に、第3図に示す回転塗布装置により、枠部7の形成
されたウェハ6表面上にレジスト8を塗布する。
Next, a resist 8 is applied onto the surface of the wafer 6 on which the frame portion 7 is formed using a spin coating apparatus shown in FIG.

即ち、第3図(a)に示すように、中央部に滴下された
レジスト8は、ウェハ吸引管lが回転すると、遠心力に
より周辺部に同心円状に広がる。
That is, as shown in FIG. 3(a), when the wafer suction tube 1 rotates, the resist 8 dropped in the center spreads concentrically around the periphery due to centrifugal force.

そして、下層のレジスト8は枠部7の側壁でとまるため
、ウェハ周辺部にはレジスト膜は形成されない、一方、
土間のレジスト8は枠部7の表面にも広がるが、この部
分は疎抽性の樹脂12で形成されているので、レジスト
8は枠部7に密着せずにはじかれて飛開する。このため
、ウェハ周辺8!1の形状効果による1I2Ivの変動
を抑制してウェハ全体に均一なレジスト1漠桑8aを形
成することができ、かつ従来のようにウニへ6端部や裏
面にレジスト8が回り込むこともない。
Since the lower resist 8 is stopped at the side wall of the frame 7, no resist film is formed around the wafer.
The resist 8 on the dirt floor also spreads over the surface of the frame 7, but since this part is made of the sparsely retractable resin 12, the resist 8 does not come into close contact with the frame 7 but is repelled and blown apart. Therefore, it is possible to suppress the fluctuation of 1I2Iv due to the shape effect of the wafer periphery 8!1, and form a uniform resist 1 8a on the entire wafer, and also to form resist 1 on the edges and back surface of the wafer, unlike the conventional method. 8 does not go around.

その後、所定晴間回転させた後、回転を停止する(第3
図(b))。
After that, after rotating for a predetermined amount of time, the rotation is stopped (third
Figure (b)).

次に、ベーキングしてレジストを硬化させ、レジスト膜
8aを形成する(第1図(e)、H))。
Next, the resist is hardened by baking to form a resist film 8a (FIG. 1(e), H).

次いで、縮小投影露光装置などにより露光した後、現像
してレジストII!!!8aのバターニングを行う、こ
のとき、ウェハ全体に均一なW/i厚のレジス)1!8
aが形成されているので、ウェハ全体に必要にして十分
に露光が行われる。これにより、バターニング不良を低
減でき、歩留りの向上を図ることが出来る。
Next, after exposure using a reduction projection exposure device or the like, development is performed to form Resist II! ! ! Perform patterning of 8a, at this time resist with uniform W/i thickness over the entire wafer) 1!8
Since a is formed, the entire wafer is exposed to light as necessary and sufficient. Thereby, defective patterning can be reduced and yield can be improved.

続いて、スパッタエツチング装置の反応室にウェハ6を
入れてCF4ガスにより眉間malllのエンチングを
行う。
Subsequently, the wafer 6 is placed in a reaction chamber of a sputter etching apparatus, and the small area between the eyebrows is etched using CF4 gas.

このとき、ウェハ6@部や裏面にレジスト膜8aが形成
されていないので、ウェハ6の搬送中や処理中、ウェハ
6とウェハ保持具などとの接触によるレジスト膜8aの
剥離などに起因する塵の発生を防止できる。また、樹脂
枠部7はCF、ガスによりエツチングされない。
At this time, since the resist film 8a is not formed on the wafer 6@ part or the back surface, dust may be generated due to peeling of the resist film 8a due to contact between the wafer 6 and a wafer holder, etc., during transportation or processing of the wafer 6. can be prevented from occurring. Further, the resin frame portion 7 is not etched by CF or gas.

その後、キシレンやオルトジクロルベンゼンなどのレジ
スト剥離液によりレジスト膜8aを除去する。このとき
も樹脂枠部7はレジスト剥離液にはおかされない、従っ
て、次のレジスト膜のパタニングの際、枠部7をそのま
まの状態で使用できる。
Thereafter, the resist film 8a is removed using a resist stripping solution such as xylene or orthodichlorobenzene. At this time as well, the resin frame 7 is not exposed to the resist stripping solution, so that the frame 7 can be used as is when patterning the next resist film.

このように、枠部7を形成したそのままの状態で何度も
レジスト1漠のバターニングを行うことができるので、
従来と異なり、スルーブツトの低下を招くことはない。
In this way, patterning of the resist 1 can be performed many times with the frame portion 7 formed as it is.
Unlike the conventional method, there is no reduction in throughput.

最後に、酸素を反応ガスとしたドライエンチングにより
枠部7を除去する。
Finally, the frame portion 7 is removed by dry etching using oxygen as a reaction gas.

次に、第4図を参照しながら本発明の他の実施例につい
て筒車に説明する。
Next, another embodiment of the present invention will be described with reference to FIG. 4.

同図は、本発明の他の実施例に係る疎抽111−の樹脂
からなる枠部の形状を示すウェハ上面図で、枠部7aを
チップの形状に合わせて形成している。
This figure is a top view of a wafer showing the shape of a frame made of resin of a loose drawing 111- according to another embodiment of the present invention, in which the frame 7a is formed to match the shape of the chip.

この場合でも、上述の実施例の作用効果と同し作用効果
を奏することはいうまでもない、なお、図中符号6aは
ウェハを示す。
It goes without saying that even in this case, the same effects as those of the above-mentioned embodiments can be obtained. Note that the reference numeral 6a in the figure indicates a wafer.

〔発明の効果〕〔Effect of the invention〕

以上のように、本発明の製造方法によれば、ウェハ周辺
部に疎油杜の樹脂からなる枠部を形成しているので、ウ
ェハ周辺部及びウェハ裏面にレジス)119が形成され
るのを防止できる。
As described above, according to the manufacturing method of the present invention, since the frame made of oleophobic resin is formed around the wafer, the formation of the resist 119 on the wafer periphery and the back surface of the wafer is prevented. It can be prevented.

このため、ウェハ保持共とウェハとの接触によるレジス
ト剥離に起因する塵の発生を防止できる。
Therefore, it is possible to prevent dust from being generated due to resist peeling due to contact with the wafer while holding the wafer.

これにより、半導体装置の歩留り向上を図ることが出来
る。
Thereby, it is possible to improve the yield of semiconductor devices.

また、枠部の形成後、枠部を形成したそのままの状態で
後のレジスト膜のバターニングの際、何度でも使用する
ことができる。このため、従来のようにスルーブツトが
低下することはない。
Further, after forming the frame portion, the frame portion can be used as many times as desired during patterning of the resist film. Therefore, the throughput does not decrease as in the conventional case.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)〜(f)は、本発明の実施例の製造方法を
説明する図、 第2図は、本発明の実施例の枠部の形成に用いるモール
ディング装置の断面図、 第3図(a)、(b)は、本発明の実施例のレジスl布
を説明する斜視図、 第4図は、本発明の他の実施例に係る枠部の形状を示す
ウェハ上面図、 第5図(a)、(b)は、従来例のレジスト塗布を説明
する斜視図、 第6図は、 ある。 (符号の説明) l・・・ウェハ吸引管、 2.6.6a・・・ウェハ、 3.8・・・レジスト、 3a、8a・・・レジスト膜、 7.7a・・・枠部、 9・・・上型、 10・・・下型、 11・・・樹脂注入口、 12・・・樹脂、 13・・・吸引口。 従来例の問題点を説明する断面図で
1(a) to (f) are diagrams explaining the manufacturing method of the embodiment of the present invention; FIG. 2 is a sectional view of a molding device used for forming the frame portion of the embodiment of the present invention; Figures (a) and (b) are perspective views illustrating a resist cloth according to an embodiment of the present invention; Figure 4 is a top view of a wafer showing the shape of a frame according to another embodiment of the present invention; 5(a) and 5(b) are perspective views illustrating conventional resist coating, and FIG. 6 is a perspective view illustrating conventional resist coating. (Explanation of symbols) l...Wafer suction tube, 2.6.6a...Wafer, 3.8...Resist, 3a, 8a...Resist film, 7.7a...Frame part, 9 ...Upper mold, 10...Lower mold, 11...Resin injection port, 12...Resin, 13...Suction port. A cross-sectional diagram explaining the problems of the conventional example.

Claims (1)

【特許請求の範囲】 ウェハ周辺部に疎油性の樹脂からなる枠部を形成する工
程と、 前記枠部の形成されたウェハ表面にレジストを塗布する
工程とを有することを特徴とする半導体装置の製造方法
[Claims] A semiconductor device comprising the steps of: forming a frame made of an oleophobic resin around a wafer; and applying a resist to the wafer surface on which the frame is formed. Production method.
JP17681489A 1989-07-07 1989-07-07 Manufacture of semiconductor device Pending JPH0341716A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17681489A JPH0341716A (en) 1989-07-07 1989-07-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17681489A JPH0341716A (en) 1989-07-07 1989-07-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH0341716A true JPH0341716A (en) 1991-02-22

Family

ID=16020312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17681489A Pending JPH0341716A (en) 1989-07-07 1989-07-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH0341716A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003026323A (en) * 2001-07-12 2003-01-29 Toyo Kogyo Kk Article alignment device
JP2003059823A (en) * 2001-06-07 2003-02-28 Tokyo Electron Ltd Film formation method and film-forming apparatus
WO2008108184A1 (en) * 2007-03-06 2008-09-12 Central Glass Company, Limited Method for manufacturing functional film forming base
US8404496B2 (en) * 1999-11-11 2013-03-26 Fujitsu Semiconductor Limited Method of testing a semiconductor device and suctioning a semiconductor device in the wafer state
CN109314070A (en) * 2016-07-01 2019-02-05 卡本有限公司 The method and system with fluid preservation feature for spin coating plural layers

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8404496B2 (en) * 1999-11-11 2013-03-26 Fujitsu Semiconductor Limited Method of testing a semiconductor device and suctioning a semiconductor device in the wafer state
US8759119B2 (en) 1999-11-11 2014-06-24 Fujitsu Semiconductor Limited Method of testing a semiconductor device and suctioning a semiconductor device in the wafer state
JP2003059823A (en) * 2001-06-07 2003-02-28 Tokyo Electron Ltd Film formation method and film-forming apparatus
JP2003026323A (en) * 2001-07-12 2003-01-29 Toyo Kogyo Kk Article alignment device
WO2008108184A1 (en) * 2007-03-06 2008-09-12 Central Glass Company, Limited Method for manufacturing functional film forming base
CN109314070A (en) * 2016-07-01 2019-02-05 卡本有限公司 The method and system with fluid preservation feature for spin coating plural layers
JP2019522898A (en) * 2016-07-01 2019-08-15 カーボン,インコーポレイテッド Method and system for spin coating multilayer thin films with liquid-saving features
CN109314070B (en) * 2016-07-01 2022-10-18 卡本有限公司 Method and system for spin-coating multilayer thin films with liquid retention features

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