JPH0340936B2 - - Google Patents

Info

Publication number
JPH0340936B2
JPH0340936B2 JP59191844A JP19184484A JPH0340936B2 JP H0340936 B2 JPH0340936 B2 JP H0340936B2 JP 59191844 A JP59191844 A JP 59191844A JP 19184484 A JP19184484 A JP 19184484A JP H0340936 B2 JPH0340936 B2 JP H0340936B2
Authority
JP
Japan
Prior art keywords
layer
gas
product
resist
inorganic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59191844A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6085526A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS6085526A publication Critical patent/JPS6085526A/ja
Publication of JPH0340936B2 publication Critical patent/JPH0340936B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
JP59191844A 1983-09-16 1984-09-14 少くとも一つのパタ−ン描画工程を含む製品の製作方法 Granted JPS6085526A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53277683A 1983-09-16 1983-09-16
US532776 1983-09-16

Publications (2)

Publication Number Publication Date
JPS6085526A JPS6085526A (ja) 1985-05-15
JPH0340936B2 true JPH0340936B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-06-20

Family

ID=24123116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59191844A Granted JPS6085526A (ja) 1983-09-16 1984-09-14 少くとも一つのパタ−ン描画工程を含む製品の製作方法

Country Status (6)

Country Link
EP (1) EP0136130B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6085526A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR910006163B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1248402A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3480666D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES8800306A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
GB8427149D0 (en) * 1984-10-26 1984-12-05 Ucb Sa Resist materials
CA1267378A (en) * 1984-12-07 1990-04-03 Jer-Ming Yang Top imaged and organosilicon treated polymer layer developable with plasma
GB2170015A (en) * 1985-01-11 1986-07-23 Philips Electronic Associated Method of manufacturing a semiconductor device
CA1282273C (en) * 1985-03-19 1991-04-02 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4908298A (en) * 1985-03-19 1990-03-13 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
JPS61268028A (ja) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ホトレジスト中にマスク像を現像する方法
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
US4657845A (en) * 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
EP0238690B1 (en) * 1986-03-27 1991-11-06 International Business Machines Corporation Process for forming sidewalls
EP0244572B1 (en) * 1986-04-24 1990-09-05 International Business Machines Corporation Capped two-layer resist process
JPS62263645A (ja) * 1986-05-06 1987-11-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 電気的接点構造とその形成方法
GB8611229D0 (en) * 1986-05-08 1986-06-18 Ucb Sa Forming positive pattern
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
DE3772267D1 (de) * 1986-06-12 1991-09-26 Matsushita Electric Ind Co Ltd Bilderzeugungsverfahren.
US4690838A (en) * 1986-08-25 1987-09-01 International Business Machines Corporation Process for enhancing the resistance of a resist image to reactive ion etching and to thermal flow
US4931351A (en) * 1987-01-12 1990-06-05 Eastman Kodak Company Bilayer lithographic process
JPH01186934A (ja) * 1988-01-21 1989-07-26 Toshiba Corp パターン形成方法
DE3913434A1 (de) * 1989-04-24 1990-10-25 Siemens Ag Trockenwickelbares resistsystem
JP3001607B2 (ja) * 1989-04-24 2000-01-24 シーメンス、アクチエンゲゼルシヤフト 二層法における寸法安定な構造転写方法
US5275920A (en) * 1989-04-24 1994-01-04 Siemens Aktiengesellschaft Method of dry development utilizing quinone diazide and basic polymer resist with latent image intensification through treatment with silicon-organic compound in water
JP2930971B2 (ja) * 1989-06-22 1999-08-09 株式会社東芝 パターン形成方法
DE59010864D1 (de) * 1990-04-12 1999-04-15 Siemens Ag Verfahren zur Erzeugung einer Resiststruktur
DE59108083D1 (de) * 1990-12-20 1996-09-19 Siemens Ag Photolithographische Strukturerzeugung
DE59506534D1 (de) * 1994-05-25 1999-09-09 Siemens Ag Trockenentwickelbarer positivresist
CN115047728B (zh) * 2022-07-01 2025-04-08 中国科学院光电技术研究所 等离子体共振腔透镜光刻的成像结构保护方法及其结构

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4307178A (en) * 1980-04-30 1981-12-22 International Business Machines Corporation Plasma develoment of resists
EP0058214B1 (en) * 1981-02-16 1985-06-19 International Business Machines Corporation Method for increasing the resistance of a solid material surface against etching

Also Published As

Publication number Publication date
EP0136130B1 (en) 1989-12-06
EP0136130A3 (en) 1985-11-06
KR910006163B1 (ko) 1991-08-16
ES535948A0 (es) 1987-11-16
ES8800306A1 (es) 1987-11-16
EP0136130A2 (en) 1985-04-03
KR850002672A (ko) 1985-05-15
JPS6085526A (ja) 1985-05-15
CA1248402A (en) 1989-01-10
DE3480666D1 (de) 1990-01-11

Similar Documents

Publication Publication Date Title
JPH0340936B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US5925494A (en) Vapor deposition of polymer films for photolithography
US5948570A (en) Process for dry lithographic etching
EP0145911B1 (en) Dry process for forming positive tone micro patterns
KR20200144580A (ko) Euv 패터닝 가능한 하드 마스크들을 제조하기 위한 방법들
US4715929A (en) Pattern forming method
US5215867A (en) Method with gas functionalized plasma developed layer
JPH0523430B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6360891B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4510173A (en) Method for forming flattened film
US4596761A (en) Graft polymerized SiO2 lithographic masks
JPS63253356A (ja) 半導体装置の製造方法
JPS6219051B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP4836363B2 (ja) レジストパターンの形成方法
JPS62273528A (ja) ポリマ膜表面のシリル化方法およびこれを用いたパタ−ン形成方法
JPH06232041A (ja) パターン形成方法
JPS6376438A (ja) パタ−ン形成方法
JPS6194041A (ja) パタ−ン形成方法
EP0354536B1 (en) Pattering method
US20240045332A1 (en) Method of forming photosensitive organometallic oxides by chemical vapor polymerization
JPS61180437A (ja) パタ−ン形成方法
JP2585676B2 (ja) パターン形成方法
JP3627137B2 (ja) パターン形成方法
JPH0143453B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2006071913A (ja) レジストパターンの形成方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees