JPH0340513B2 - - Google Patents
Info
- Publication number
- JPH0340513B2 JPH0340513B2 JP59246308A JP24630884A JPH0340513B2 JP H0340513 B2 JPH0340513 B2 JP H0340513B2 JP 59246308 A JP59246308 A JP 59246308A JP 24630884 A JP24630884 A JP 24630884A JP H0340513 B2 JPH0340513 B2 JP H0340513B2
- Authority
- JP
- Japan
- Prior art keywords
- island
- recrystallized
- silicon island
- semiconductor
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59246308A JPS61125169A (ja) | 1984-11-22 | 1984-11-22 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59246308A JPS61125169A (ja) | 1984-11-22 | 1984-11-22 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61125169A JPS61125169A (ja) | 1986-06-12 |
| JPH0340513B2 true JPH0340513B2 (OSRAM) | 1991-06-19 |
Family
ID=17146617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59246308A Granted JPS61125169A (ja) | 1984-11-22 | 1984-11-22 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61125169A (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2730905B2 (ja) * | 1988-05-07 | 1998-03-25 | 富士通株式会社 | 半導体装置の製造方法 |
| TWI261358B (en) * | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58114440A (ja) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | 半導体装置用基板の製造方法 |
-
1984
- 1984-11-22 JP JP59246308A patent/JPS61125169A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61125169A (ja) | 1986-06-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |