JPH0336905B2 - - Google Patents

Info

Publication number
JPH0336905B2
JPH0336905B2 JP62179282A JP17928287A JPH0336905B2 JP H0336905 B2 JPH0336905 B2 JP H0336905B2 JP 62179282 A JP62179282 A JP 62179282A JP 17928287 A JP17928287 A JP 17928287A JP H0336905 B2 JPH0336905 B2 JP H0336905B2
Authority
JP
Japan
Prior art keywords
etching
solution
ions
metal
ozone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62179282A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63111186A (ja
Inventor
Akosera Jon
Danieru Deuido Rooresu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS63111186A publication Critical patent/JPS63111186A/ja
Publication of JPH0336905B2 publication Critical patent/JPH0336905B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
JP62179282A 1986-10-29 1987-07-20 金属のエッチング方法 Granted JPS63111186A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/924,702 US4747907A (en) 1986-10-29 1986-10-29 Metal etching process with etch rate enhancement
US924702 1986-10-29

Publications (2)

Publication Number Publication Date
JPS63111186A JPS63111186A (ja) 1988-05-16
JPH0336905B2 true JPH0336905B2 (cg-RX-API-DMAC7.html) 1991-06-03

Family

ID=25450576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62179282A Granted JPS63111186A (ja) 1986-10-29 1987-07-20 金属のエッチング方法

Country Status (3)

Country Link
US (1) US4747907A (cg-RX-API-DMAC7.html)
EP (1) EP0266518A1 (cg-RX-API-DMAC7.html)
JP (1) JPS63111186A (cg-RX-API-DMAC7.html)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3728693A1 (de) * 1987-08-27 1989-03-09 Wacker Chemitronic Verfahren und vorrichtung zum aetzen von halbleiteroberflaechen
US4995942A (en) * 1990-04-30 1991-02-26 International Business Machines Corporation Effective near neutral pH etching solution for molybdenum or tungsten
US5227010A (en) * 1991-04-03 1993-07-13 International Business Machines Corporation Regeneration of ferric chloride etchants
US5244000A (en) * 1991-11-13 1993-09-14 Hughes Aircraft Company Method and system for removing contaminants
US5259979A (en) * 1993-01-13 1993-11-09 Oliver Sales Company Process for regeneration of cleaning compounds
US5518131A (en) * 1994-07-07 1996-05-21 International Business Machines Corporation Etching molydbenum with ferric sulfate and ferric ammonium sulfate
SE510298C2 (sv) * 1995-11-28 1999-05-10 Eka Chemicals Ab Sätt vid betning av stål
US5904859A (en) * 1997-04-02 1999-05-18 Lucent Technologies Inc. Flip chip metallization
US6194127B1 (en) * 1998-05-27 2001-02-27 Mcdonnell Douglas Corporation Resistive sheet patterning process and product thereof
US6436723B1 (en) * 1998-10-16 2002-08-20 Kabushiki Kaisha Toshiba Etching method and etching apparatus method for manufacturing semiconductor device and semiconductor device
US6537461B1 (en) * 2000-04-24 2003-03-25 Hitachi, Ltd. Process for treating solid surface and substrate surface
US6375693B1 (en) 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
SG92720A1 (en) * 1999-07-14 2002-11-19 Nisso Engineering Co Ltd Method and apparatus for etching silicon
US6977515B2 (en) * 2001-09-20 2005-12-20 Wentworth Laboratories, Inc. Method for forming photo-defined micro electrical contacts
US6906540B2 (en) * 2001-09-20 2005-06-14 Wentworth Laboratories, Inc. Method for chemically etching photo-defined micro electrical contacts
US7049237B2 (en) * 2001-12-21 2006-05-23 Micron Technology, Inc. Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases
US7121926B2 (en) 2001-12-21 2006-10-17 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article
US6884723B2 (en) 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
US20030119316A1 (en) * 2001-12-21 2003-06-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using oxidizing agents
US6730592B2 (en) * 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
WO2005050706A2 (en) 2003-11-14 2005-06-02 Wentworth Laboratories, Inc. Die design with integrated assembly aid
US7186480B2 (en) * 2003-12-10 2007-03-06 Micron Technology, Inc. Method for adjusting dimensions of photomask features
EP1834011A2 (en) 2004-12-06 2007-09-19 Koninklijke Philips Electronics N.V. Etchant solutions and additives therefor
US7837929B2 (en) * 2005-10-20 2010-11-23 H.C. Starck Inc. Methods of making molybdenum titanium sputtering plates and targets
US8449817B2 (en) 2010-06-30 2013-05-28 H.C. Stark, Inc. Molybdenum-containing targets comprising three metal elements
US8449818B2 (en) 2010-06-30 2013-05-28 H. C. Starck, Inc. Molybdenum containing targets
CN103562432B (zh) 2011-05-10 2015-08-26 H·C·施塔克公司 多段溅射靶及其相关的方法和物品
US9334565B2 (en) 2012-05-09 2016-05-10 H.C. Starck Inc. Multi-block sputtering target with interface portions and associated methods and articles
WO2020074541A1 (en) * 2018-10-08 2020-04-16 Degrémont Technologies Ag Using ozone for manganese* oxidation in etching application
CN111893488A (zh) * 2020-08-04 2020-11-06 深圳市乾行达科技有限公司 蚀刻液及其制备方法
JP7595273B2 (ja) * 2020-09-24 2024-12-06 パナソニックＩｐマネジメント株式会社 エッチング液
JP2024017655A (ja) * 2022-07-28 2024-02-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法と基板処理装置と基板処理液
CN118086964A (zh) * 2024-01-30 2024-05-28 西湖大学 一种水氧化催化剂及其制备方法和应用

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1188870A (en) * 1912-11-06 1916-06-27 B E Williamson Etching process.
US2886420A (en) * 1956-06-05 1959-05-12 Gen Dynamics Corp Etching process
GB955000A (en) * 1961-04-13 1964-04-08 Marconi Co Ltd Improvements in or relating to copper etching solutions
US3306792A (en) * 1963-08-05 1967-02-28 Siemens Ag Continuously regenerating coppercontaining etching solutions
US3532568A (en) * 1967-11-24 1970-10-06 Nasa Method for etching copper
US3600244A (en) * 1969-02-20 1971-08-17 Ibm Process of etching metal with recovery or regeneration and recycling
JPS5222743B2 (cg-RX-API-DMAC7.html) * 1973-03-02 1977-06-20
DE2358683A1 (de) * 1973-11-24 1975-06-05 Kalman Von Dipl Phys Soos Verfahren zum beizen und aetzen von metallen
JPS5116244A (en) * 1974-07-31 1976-02-09 Hitachi Ltd Kinzokuno yokaishorihoho oyobi sonosochi
US3951710A (en) * 1974-09-13 1976-04-20 International Business Machines Corporation Method for removing copper contaminant from semiconductor surfaces
US3962005A (en) * 1975-06-30 1976-06-08 Zenith Radio Corporation Method for etching shadow mask and regenerating etchant
US4287002A (en) * 1979-04-09 1981-09-01 Atomic Energy Of Canada Ltd. Nuclear reactor decontamination
JPS58167771A (ja) * 1982-03-29 1983-10-04 Toshiba Corp 腐蝕液の制御方法
US4587043A (en) * 1983-06-07 1986-05-06 Westinghouse Electric Corp. Decontamination of metal surfaces in nuclear power reactors
US4685971A (en) * 1983-07-12 1987-08-11 Westinghouse Electric Corp. Ozone oxidation of deposits in cooling systems of nuclear reactors
US4569720A (en) * 1984-05-07 1986-02-11 Allied Corporation Copper etching system
CA1230806A (en) * 1984-05-29 1987-12-29 Clifton G. Slater Ceric acid decontamination of nuclear reactors
US4629636A (en) * 1984-06-07 1986-12-16 Enthone, Incorporated Process for treating plastics with alkaline permanganate solutions
DE3583583D1 (de) * 1984-11-17 1991-08-29 Daikin Ind Ltd Aetzzusammensetzung.

Also Published As

Publication number Publication date
JPS63111186A (ja) 1988-05-16
EP0266518A1 (en) 1988-05-11
US4747907A (en) 1988-05-31

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