JPS63111186A - 金属のエッチング方法 - Google Patents
金属のエッチング方法Info
- Publication number
- JPS63111186A JPS63111186A JP62179282A JP17928287A JPS63111186A JP S63111186 A JPS63111186 A JP S63111186A JP 62179282 A JP62179282 A JP 62179282A JP 17928287 A JP17928287 A JP 17928287A JP S63111186 A JPS63111186 A JP S63111186A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- etching
- ions
- ozone
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims description 80
- 229910052751 metal Inorganic materials 0.000 title claims description 29
- 239000002184 metal Substances 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 23
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 25
- 229910052804 chromium Inorganic materials 0.000 claims description 21
- 150000002500 ions Chemical class 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 19
- -1 dichromate ions Chemical class 0.000 claims description 10
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910001447 ferric ion Inorganic materials 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 7
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims 1
- 239000000243 solution Substances 0.000 description 84
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 41
- 239000011651 chromium Substances 0.000 description 28
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 21
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 13
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 12
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 10
- 229910001868 water Inorganic materials 0.000 description 10
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- 238000003756 stirring Methods 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000011630 iodine Substances 0.000 description 6
- 229910052740 iodine Inorganic materials 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 238000006479 redox reaction Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005949 ozonolysis reaction Methods 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 3
- 239000013543 active substance Substances 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 239000004480 active ingredient Substances 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- BFGKITSFLPAWGI-UHFFFAOYSA-N chromium(3+) Chemical compound [Cr+3] BFGKITSFLPAWGI-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000003918 potentiometric titration Methods 0.000 description 2
- DHCDFWKWKRSZHF-UHFFFAOYSA-L thiosulfate(2-) Chemical compound [O-]S([S-])(=O)=O DHCDFWKWKRSZHF-UHFFFAOYSA-L 0.000 description 2
- 238000004448 titration Methods 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910015667 MoO4 Inorganic materials 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- YAGKRVSRTSUGEY-UHFFFAOYSA-N ferricyanide Chemical compound [Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] YAGKRVSRTSUGEY-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000000276 potassium ferrocyanide Substances 0.000 description 1
- 230000007420 reactivation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- XOGGUFAVLNCTRS-UHFFFAOYSA-N tetrapotassium;iron(2+);hexacyanide Chemical compound [K+].[K+].[K+].[K+].[Fe+2].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] XOGGUFAVLNCTRS-UHFFFAOYSA-N 0.000 description 1
- FEONEKOZSGPOFN-UHFFFAOYSA-K tribromoiron Chemical compound Br[Fe](Br)Br FEONEKOZSGPOFN-UHFFFAOYSA-K 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/924,702 US4747907A (en) | 1986-10-29 | 1986-10-29 | Metal etching process with etch rate enhancement |
| US924702 | 1986-10-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63111186A true JPS63111186A (ja) | 1988-05-16 |
| JPH0336905B2 JPH0336905B2 (cg-RX-API-DMAC7.html) | 1991-06-03 |
Family
ID=25450576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62179282A Granted JPS63111186A (ja) | 1986-10-29 | 1987-07-20 | 金属のエッチング方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4747907A (cg-RX-API-DMAC7.html) |
| EP (1) | EP0266518A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JPS63111186A (cg-RX-API-DMAC7.html) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111893488A (zh) * | 2020-08-04 | 2020-11-06 | 深圳市乾行达科技有限公司 | 蚀刻液及其制备方法 |
| JP2022052909A (ja) * | 2020-09-24 | 2022-04-05 | パナソニックＩｐマネジメント株式会社 | エッチング液 |
| WO2024024243A1 (ja) * | 2022-07-28 | 2024-02-01 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法と基板処理装置と基板処理液 |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3728693A1 (de) * | 1987-08-27 | 1989-03-09 | Wacker Chemitronic | Verfahren und vorrichtung zum aetzen von halbleiteroberflaechen |
| US4995942A (en) * | 1990-04-30 | 1991-02-26 | International Business Machines Corporation | Effective near neutral pH etching solution for molybdenum or tungsten |
| US5227010A (en) * | 1991-04-03 | 1993-07-13 | International Business Machines Corporation | Regeneration of ferric chloride etchants |
| US5244000A (en) * | 1991-11-13 | 1993-09-14 | Hughes Aircraft Company | Method and system for removing contaminants |
| US5259979A (en) * | 1993-01-13 | 1993-11-09 | Oliver Sales Company | Process for regeneration of cleaning compounds |
| US5518131A (en) * | 1994-07-07 | 1996-05-21 | International Business Machines Corporation | Etching molydbenum with ferric sulfate and ferric ammonium sulfate |
| SE510298C2 (sv) * | 1995-11-28 | 1999-05-10 | Eka Chemicals Ab | Sätt vid betning av stål |
| US5904859A (en) * | 1997-04-02 | 1999-05-18 | Lucent Technologies Inc. | Flip chip metallization |
| US6194127B1 (en) * | 1998-05-27 | 2001-02-27 | Mcdonnell Douglas Corporation | Resistive sheet patterning process and product thereof |
| US6436723B1 (en) * | 1998-10-16 | 2002-08-20 | Kabushiki Kaisha Toshiba | Etching method and etching apparatus method for manufacturing semiconductor device and semiconductor device |
| US6537461B1 (en) * | 2000-04-24 | 2003-03-25 | Hitachi, Ltd. | Process for treating solid surface and substrate surface |
| US6375693B1 (en) | 1999-05-07 | 2002-04-23 | International Business Machines Corporation | Chemical-mechanical planarization of barriers or liners for copper metallurgy |
| SG92720A1 (en) * | 1999-07-14 | 2002-11-19 | Nisso Engineering Co Ltd | Method and apparatus for etching silicon |
| US6977515B2 (en) * | 2001-09-20 | 2005-12-20 | Wentworth Laboratories, Inc. | Method for forming photo-defined micro electrical contacts |
| US6906540B2 (en) * | 2001-09-20 | 2005-06-14 | Wentworth Laboratories, Inc. | Method for chemically etching photo-defined micro electrical contacts |
| US7049237B2 (en) * | 2001-12-21 | 2006-05-23 | Micron Technology, Inc. | Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases |
| US7121926B2 (en) | 2001-12-21 | 2006-10-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
| US6884723B2 (en) | 2001-12-21 | 2005-04-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using complexing agents |
| US20030119316A1 (en) * | 2001-12-21 | 2003-06-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using oxidizing agents |
| US6730592B2 (en) * | 2001-12-21 | 2004-05-04 | Micron Technology, Inc. | Methods for planarization of metal-containing surfaces using halogens and halide salts |
| WO2005050706A2 (en) | 2003-11-14 | 2005-06-02 | Wentworth Laboratories, Inc. | Die design with integrated assembly aid |
| US7186480B2 (en) * | 2003-12-10 | 2007-03-06 | Micron Technology, Inc. | Method for adjusting dimensions of photomask features |
| EP1834011A2 (en) | 2004-12-06 | 2007-09-19 | Koninklijke Philips Electronics N.V. | Etchant solutions and additives therefor |
| US7837929B2 (en) * | 2005-10-20 | 2010-11-23 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
| US8449817B2 (en) | 2010-06-30 | 2013-05-28 | H.C. Stark, Inc. | Molybdenum-containing targets comprising three metal elements |
| US8449818B2 (en) | 2010-06-30 | 2013-05-28 | H. C. Starck, Inc. | Molybdenum containing targets |
| CN103562432B (zh) | 2011-05-10 | 2015-08-26 | H·C·施塔克公司 | 多段溅射靶及其相关的方法和物品 |
| US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
| WO2020074541A1 (en) * | 2018-10-08 | 2020-04-16 | Degrémont Technologies Ag | Using ozone for manganese* oxidation in etching application |
| CN118086964A (zh) * | 2024-01-30 | 2024-05-28 | 西湖大学 | 一种水氧化催化剂及其制备方法和应用 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49113737A (cg-RX-API-DMAC7.html) * | 1973-03-02 | 1974-10-30 | ||
| JPS5116244A (en) * | 1974-07-31 | 1976-02-09 | Hitachi Ltd | Kinzokuno yokaishorihoho oyobi sonosochi |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1188870A (en) * | 1912-11-06 | 1916-06-27 | B E Williamson | Etching process. |
| US2886420A (en) * | 1956-06-05 | 1959-05-12 | Gen Dynamics Corp | Etching process |
| GB955000A (en) * | 1961-04-13 | 1964-04-08 | Marconi Co Ltd | Improvements in or relating to copper etching solutions |
| US3306792A (en) * | 1963-08-05 | 1967-02-28 | Siemens Ag | Continuously regenerating coppercontaining etching solutions |
| US3532568A (en) * | 1967-11-24 | 1970-10-06 | Nasa | Method for etching copper |
| US3600244A (en) * | 1969-02-20 | 1971-08-17 | Ibm | Process of etching metal with recovery or regeneration and recycling |
| DE2358683A1 (de) * | 1973-11-24 | 1975-06-05 | Kalman Von Dipl Phys Soos | Verfahren zum beizen und aetzen von metallen |
| US3951710A (en) * | 1974-09-13 | 1976-04-20 | International Business Machines Corporation | Method for removing copper contaminant from semiconductor surfaces |
| US3962005A (en) * | 1975-06-30 | 1976-06-08 | Zenith Radio Corporation | Method for etching shadow mask and regenerating etchant |
| US4287002A (en) * | 1979-04-09 | 1981-09-01 | Atomic Energy Of Canada Ltd. | Nuclear reactor decontamination |
| JPS58167771A (ja) * | 1982-03-29 | 1983-10-04 | Toshiba Corp | 腐蝕液の制御方法 |
| US4587043A (en) * | 1983-06-07 | 1986-05-06 | Westinghouse Electric Corp. | Decontamination of metal surfaces in nuclear power reactors |
| US4685971A (en) * | 1983-07-12 | 1987-08-11 | Westinghouse Electric Corp. | Ozone oxidation of deposits in cooling systems of nuclear reactors |
| US4569720A (en) * | 1984-05-07 | 1986-02-11 | Allied Corporation | Copper etching system |
| CA1230806A (en) * | 1984-05-29 | 1987-12-29 | Clifton G. Slater | Ceric acid decontamination of nuclear reactors |
| US4629636A (en) * | 1984-06-07 | 1986-12-16 | Enthone, Incorporated | Process for treating plastics with alkaline permanganate solutions |
| DE3583583D1 (de) * | 1984-11-17 | 1991-08-29 | Daikin Ind Ltd | Aetzzusammensetzung. |
-
1986
- 1986-10-29 US US06/924,702 patent/US4747907A/en not_active Expired - Fee Related
-
1987
- 1987-07-20 JP JP62179282A patent/JPS63111186A/ja active Granted
- 1987-09-11 EP EP87113321A patent/EP0266518A1/en not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49113737A (cg-RX-API-DMAC7.html) * | 1973-03-02 | 1974-10-30 | ||
| JPS5116244A (en) * | 1974-07-31 | 1976-02-09 | Hitachi Ltd | Kinzokuno yokaishorihoho oyobi sonosochi |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111893488A (zh) * | 2020-08-04 | 2020-11-06 | 深圳市乾行达科技有限公司 | 蚀刻液及其制备方法 |
| JP2022052909A (ja) * | 2020-09-24 | 2022-04-05 | パナソニックＩｐマネジメント株式会社 | エッチング液 |
| WO2024024243A1 (ja) * | 2022-07-28 | 2024-02-01 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法と基板処理装置と基板処理液 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0266518A1 (en) | 1988-05-11 |
| US4747907A (en) | 1988-05-31 |
| JPH0336905B2 (cg-RX-API-DMAC7.html) | 1991-06-03 |
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