JPH0336339B2 - - Google Patents
Info
- Publication number
- JPH0336339B2 JPH0336339B2 JP57177438A JP17743882A JPH0336339B2 JP H0336339 B2 JPH0336339 B2 JP H0336339B2 JP 57177438 A JP57177438 A JP 57177438A JP 17743882 A JP17743882 A JP 17743882A JP H0336339 B2 JPH0336339 B2 JP H0336339B2
- Authority
- JP
- Japan
- Prior art keywords
- gto
- gate
- terminal
- cathode
- auxiliary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 claims description 15
- 238000010586 diagram Methods 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
- H03K17/732—Measures for enabling turn-off
Landscapes
- Power Conversion In General (AREA)
- Thyristor Switches And Gates (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57177438A JPS5967725A (ja) | 1982-10-08 | 1982-10-08 | 増幅ゲ−ト構造ｇｔｏのゲ−トドライブ回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57177438A JPS5967725A (ja) | 1982-10-08 | 1982-10-08 | 増幅ゲ−ト構造ｇｔｏのゲ−トドライブ回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5967725A JPS5967725A (ja) | 1984-04-17 |
| JPH0336339B2 true JPH0336339B2 (cs) | 1991-05-31 |
Family
ID=16030941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57177438A Granted JPS5967725A (ja) | 1982-10-08 | 1982-10-08 | 増幅ゲ−ト構造ｇｔｏのゲ−トドライブ回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5967725A (cs) |
-
1982
- 1982-10-08 JP JP57177438A patent/JPS5967725A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5967725A (ja) | 1984-04-17 |
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