JPH0336308B2 - - Google Patents
Info
- Publication number
- JPH0336308B2 JPH0336308B2 JP56118035A JP11803581A JPH0336308B2 JP H0336308 B2 JPH0336308 B2 JP H0336308B2 JP 56118035 A JP56118035 A JP 56118035A JP 11803581 A JP11803581 A JP 11803581A JP H0336308 B2 JPH0336308 B2 JP H0336308B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- transistor
- collector
- base
- island
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56118035A JPS5818956A (ja) | 1981-07-28 | 1981-07-28 | 半導体集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56118035A JPS5818956A (ja) | 1981-07-28 | 1981-07-28 | 半導体集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5818956A JPS5818956A (ja) | 1983-02-03 |
| JPH0336308B2 true JPH0336308B2 (en:Method) | 1991-05-31 |
Family
ID=14726431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56118035A Granted JPS5818956A (ja) | 1981-07-28 | 1981-07-28 | 半導体集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5818956A (en:Method) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1306609C (zh) * | 1998-09-18 | 2007-03-21 | 三菱电机株式会社 | 半导体电力变换装置 |
-
1981
- 1981-07-28 JP JP56118035A patent/JPS5818956A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5818956A (ja) | 1983-02-03 |
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