JPH033606B2 - - Google Patents

Info

Publication number
JPH033606B2
JPH033606B2 JP56105737A JP10573781A JPH033606B2 JP H033606 B2 JPH033606 B2 JP H033606B2 JP 56105737 A JP56105737 A JP 56105737A JP 10573781 A JP10573781 A JP 10573781A JP H033606 B2 JPH033606 B2 JP H033606B2
Authority
JP
Japan
Prior art keywords
mixed oxide
oxide according
neodymium
magnesium
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56105737A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5792522A (en
Inventor
Kaan Andore
Ruju Anneemarii
Terii Janiinu
Uiuian Danieru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SANTORU NASHIONARU DO RA RUSHERUSHU SHIANTEIFUITSUKU
Original Assignee
SANTORU NASHIONARU DO RA RUSHERUSHU SHIANTEIFUITSUKU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SANTORU NASHIONARU DO RA RUSHERUSHU SHIANTEIFUITSUKU filed Critical SANTORU NASHIONARU DO RA RUSHERUSHU SHIANTEIFUITSUKU
Publication of JPS5792522A publication Critical patent/JPS5792522A/ja
Publication of JPH033606B2 publication Critical patent/JPH033606B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/30—Compounds containing rare earth metals and at least one element other than a rare earth metal, oxygen or hydrogen, e.g. La4S3Br6
    • C01F17/32—Compounds containing rare earth metals and at least one element other than a rare earth metal, oxygen or hydrogen, e.g. La4S3Br6 oxide or hydroxide being the only anion, e.g. NaCeO2 or MgxCayEuO
    • C01F17/34—Aluminates, e.g. YAlO3 or Y3-xGdxAl5O12
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G33/00—Compounds of niobium
    • C01G33/006—Compounds containing niobium, with or without oxygen or hydrogen, and containing two or more other elements
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G37/00—Compounds of chromium
    • C01G37/006—Compounds containing chromium, with or without oxygen or hydrogen, and containing two or more other elements
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G45/00—Compounds of manganese
    • C01G45/20—Compounds containing manganese, with or without oxygen or hydrogen, and containing one or more other elements
    • C01G45/22—Compounds containing manganese, with or without oxygen or hydrogen, and containing two or more other elements
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G49/00—Compounds of iron
    • C01G49/009—Compounds containing iron, with or without oxygen or hydrogen, and containing two or more other elements
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00—Compounds of cobalt
    • C01G51/80—Compounds containing cobalt, with or without oxygen or hydrogen, and containing one or more other elements
    • C01G51/82—Compounds containing cobalt, with or without oxygen or hydrogen, and containing two or more other elements
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G53/00—Compounds of nickel
    • C01G53/80—Compounds containing nickel, with or without oxygen or hydrogen, and containing one or more other elements
    • C01G53/82—Compounds containing nickel, with or without oxygen or hydrogen, and containing two or more other elements
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/44—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1688—Stoichiometric laser compounds, i.e. in which the active element forms one component of a stoichiometric formula rather than being merely a dopant
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Geology (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Compounds Of Iron (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Luminescent Compositions (AREA)
JP56105737A 1980-07-08 1981-07-08 Alminum mixed oxide, manufacture and use Granted JPS5792522A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8015171A FR2486519A1 (fr) 1980-07-08 1980-07-08 Oxydes mixtes d'aluminium, leur procede de fabrication et leur application

Publications (2)

Publication Number Publication Date
JPS5792522A JPS5792522A (en) 1982-06-09
JPH033606B2 true JPH033606B2 (https=) 1991-01-21

Family

ID=9243984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56105737A Granted JPS5792522A (en) 1980-07-08 1981-07-08 Alminum mixed oxide, manufacture and use

Country Status (6)

Country Link
US (1) US4606846A (https=)
EP (1) EP0043776B1 (https=)
JP (1) JPS5792522A (https=)
AT (1) ATE10085T1 (https=)
DE (1) DE3166946D1 (https=)
FR (1) FR2486519A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2588848B1 (fr) * 1985-10-21 1987-11-20 Commissariat Energie Atomique Aluminates mixtes de lanthane-magnesium, leur procede de fabrication et lasers utilisant ces aluminates
IL82361A (en) * 1986-04-30 1990-11-05 American Telephone & Telegraph Device comprising congruently melting complex oxides
FR2599733B1 (fr) * 1986-06-10 1988-08-26 Centre Nat Rech Scient Gallates mixtes de lanthanide-magnesium, laser utilisant des monocristaux de ces gallates
FR2600055B1 (fr) * 1986-06-16 1988-08-26 Commissariat Energie Atomique Aluminates mixtes de lanthanide-magnesium, lasers utilisant des monocristaux de ces aluminates
FR2603051B1 (fr) * 1986-12-05 1988-11-10 Commissariat Energie Atomique Aluminates mixtes de lanthane-magnesium, lasers utilisant des monocristaux de ces aluminates
US4824598A (en) * 1987-10-20 1989-04-25 The United States Of America As Represented By The United States Department Of Energy Synthetic laser medium
FR2659639B1 (fr) * 1990-03-13 1992-06-12 Quartz & Silice Oxydes mixtes de strontium et de lanthanide et laser utilisant des monocristaux de ces oxydes.
US5137852A (en) * 1991-01-11 1992-08-11 Rockwell International Corp. High temperature ceramic composites
DE19807163C1 (de) * 1998-02-20 1999-10-28 Rainer Gadow Wärmedämmaterial und Verfahren zum Herstellen eines solchen
US6297179B1 (en) * 1999-10-18 2001-10-02 Corning Incorporated Transition-metal, glass-ceramic gain media
JP4605729B2 (ja) * 2001-01-19 2011-01-05 信越石英株式会社 透光性セラミックス体及びその製造方法
JP4587350B2 (ja) * 2001-01-19 2010-11-24 信越石英株式会社 透光性セラミックス体の製造方法
JP4235748B2 (ja) * 2002-03-18 2009-03-11 株式会社日立プラズマパテントライセンシング 表示装置
JP4507862B2 (ja) * 2004-12-01 2010-07-21 株式会社日立プラズマパテントライセンシング 蛍光体及びそれを用いた装置
US20090160341A1 (en) * 2006-04-11 2009-06-25 Koninklijke Philips Electronics N.V. Discharge lamp comprising uv-phosphor
DE102009050542A1 (de) * 2009-10-23 2011-04-28 Merck Patent Gmbh Sm-aktivierte Aluminat- und Borat-Leuchtstoffe
KR102057026B1 (ko) * 2012-02-08 2019-12-18 바스프 에스이 수산화물(들) 을 함유할 수 있는 혼합 탄산염 제조 방법
US20150247245A1 (en) * 2013-09-30 2015-09-03 Honeywell International Inc. Protective coating systems for gas turbine engine applications and methods for fabricating the same
CN119330699A (zh) * 2024-10-18 2025-01-21 福建师范大学 一种窄带绿光发射透明荧光复合陶瓷及其制备方法与应用

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR997615A (fr) * 1948-10-14 1952-01-08 Titan Co Inc Boules de rutile et procédé pour leur fabrication
FR1347015A (fr) * 1962-08-10 1963-12-27 Comp Generale Electricite Préparation de monocristaux orientés
US3503006A (en) * 1964-04-30 1970-03-24 Union Carbide Corp Solid state laser device including lanthanum oxide as the host material
NL135101C (https=) * 1964-05-14
US3725811A (en) * 1969-09-15 1973-04-03 Westinghouse Electric Corp Laser and fluorescent crystalline materials
JPS521396B2 (https=) * 1972-08-25 1977-01-13
NL160869C (nl) * 1972-11-03 Philips Nv Luminescerend scherm, alsmede ontladingslamp en katho- de straalbuis, voorzien van een dergelijk scherm.
JPS512320A (en) * 1974-05-17 1976-01-09 Matsushita Electric Industrial Co Ltd Johoden sosochi
NL7809555A (nl) * 1978-09-20 1980-03-24 Philips Nv Werkwijze voor het bereiden van een luminescerend alu- minaat.
NL187212B (nl) * 1978-11-21 1991-02-01 Philips Nv Luminescerend terrair aluminaat; luminescerend scherm; lagedrukkwikdampontladingslamp.
CA1144743A (en) * 1979-06-21 1983-04-19 Charles F. Chenot Ce-doped yttrium aluminum garnet and devices incorporating same
US4249108A (en) * 1979-11-30 1981-02-03 Gte Products Corporation LaMg Aluminate phosphors activated by europium and lamps incorporating same

Also Published As

Publication number Publication date
EP0043776A1 (fr) 1982-01-13
JPS5792522A (en) 1982-06-09
EP0043776B1 (fr) 1984-10-31
ATE10085T1 (de) 1984-11-15
DE3166946D1 (en) 1984-12-06
US4606846A (en) 1986-08-19
FR2486519B1 (https=) 1984-10-19
FR2486519A1 (fr) 1982-01-15

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