JPH033415B2 - - Google Patents
Info
- Publication number
- JPH033415B2 JPH033415B2 JP19898784A JP19898784A JPH033415B2 JP H033415 B2 JPH033415 B2 JP H033415B2 JP 19898784 A JP19898784 A JP 19898784A JP 19898784 A JP19898784 A JP 19898784A JP H033415 B2 JPH033415 B2 JP H033415B2
- Authority
- JP
- Japan
- Prior art keywords
- wave device
- resistance band
- acoustic wave
- constant voltage
- surface acoustic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000605 extraction Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 8
- 238000010897 surface acoustic wave method Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 239000011195 cermet Substances 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229910001120 nichrome Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 238000009966 trimming Methods 0.000 claims description 3
- 230000003993 interaction Effects 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910004479 Ta2N Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19898784A JPS6177415A (ja) | 1984-09-21 | 1984-09-21 | 表面弾性波装置 |
| GB8523150A GB2166616B (en) | 1984-09-21 | 1985-09-19 | Surface acoustic wave device |
| SE8504350A SE462132B (sv) | 1984-09-21 | 1985-09-20 | Akustisk ytvaaganordning |
| FR858514000A FR2570902B1 (fr) | 1984-09-21 | 1985-09-20 | Dispositif a onde acoustique de surface |
| DE19853533611 DE3533611A1 (de) | 1984-09-21 | 1985-09-20 | Akustische oberflaechenwellenvorrichtung |
| US07/099,688 US4745378A (en) | 1984-09-21 | 1987-09-18 | Surface acoustic wave device |
| GB8822450A GB2208769B (en) | 1984-09-21 | 1988-09-23 | Surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19898784A JPS6177415A (ja) | 1984-09-21 | 1984-09-21 | 表面弾性波装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6177415A JPS6177415A (ja) | 1986-04-21 |
| JPH033415B2 true JPH033415B2 (enrdf_load_stackoverflow) | 1991-01-18 |
Family
ID=16400221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19898784A Granted JPS6177415A (ja) | 1984-09-21 | 1984-09-21 | 表面弾性波装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6177415A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7158767B2 (en) | 2003-10-24 | 2007-01-02 | Cts Corporation | Tuneable frequency translator |
-
1984
- 1984-09-21 JP JP19898784A patent/JPS6177415A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6177415A (ja) | 1986-04-21 |