JPH0331673B2 - - Google Patents
Info
- Publication number
- JPH0331673B2 JPH0331673B2 JP22577285A JP22577285A JPH0331673B2 JP H0331673 B2 JPH0331673 B2 JP H0331673B2 JP 22577285 A JP22577285 A JP 22577285A JP 22577285 A JP22577285 A JP 22577285A JP H0331673 B2 JPH0331673 B2 JP H0331673B2
- Authority
- JP
- Japan
- Prior art keywords
- molten metal
- crucible
- single crystal
- rod
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 63
- 239000013078 crystal Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 8
- 239000010453 quartz Substances 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 9
- 238000005259 measurement Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004033 diameter control Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22577285A JPS6287481A (ja) | 1985-10-09 | 1985-10-09 | 単結晶引上装置における溶湯初期位置設定方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22577285A JPS6287481A (ja) | 1985-10-09 | 1985-10-09 | 単結晶引上装置における溶湯初期位置設定方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6287481A JPS6287481A (ja) | 1987-04-21 |
| JPH0331673B2 true JPH0331673B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-05-08 |
Family
ID=16834551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22577285A Granted JPS6287481A (ja) | 1985-10-09 | 1985-10-09 | 単結晶引上装置における溶湯初期位置設定方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6287481A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10472733B2 (en) | 2012-04-04 | 2019-11-12 | Sumco Corporation | Silicon single crystal manufacturing method |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0543108Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1987-06-08 | 1993-10-29 | ||
| DE4231162C2 (de) * | 1992-09-17 | 1996-03-14 | Wacker Siltronic Halbleitermat | Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen |
| JP3455580B2 (ja) * | 1994-06-03 | 2003-10-14 | ワッカー・エヌエスシーイー株式会社 | シリコン単結晶の引上げ装置および製造方法 |
| JP4561513B2 (ja) | 2005-07-22 | 2010-10-13 | 株式会社Sumco | 単結晶引き上げ装置の液面位置調整機構及び液面位置調整方法並びに単結晶引き上げ装置の液面位置合わせ機構及び液面位置合わせ方法 |
| JP5404264B2 (ja) * | 2009-09-07 | 2014-01-29 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 単結晶シリコンの製造方法及び単結晶シリコンの製造装置 |
| TWI541392B (zh) * | 2015-04-23 | 2016-07-11 | 環球晶圓股份有限公司 | 熱熔間隙量測裝置、長晶裝置及熱熔間隙量測方法 |
| JP7683433B2 (ja) | 2021-09-06 | 2025-05-27 | 株式会社Sumco | 単結晶の製造方法及び単結晶製造装置 |
-
1985
- 1985-10-09 JP JP22577285A patent/JPS6287481A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10472733B2 (en) | 2012-04-04 | 2019-11-12 | Sumco Corporation | Silicon single crystal manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6287481A (ja) | 1987-04-21 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |