JPH03295855A - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPH03295855A JPH03295855A JP2097315A JP9731590A JPH03295855A JP H03295855 A JPH03295855 A JP H03295855A JP 2097315 A JP2097315 A JP 2097315A JP 9731590 A JP9731590 A JP 9731590A JP H03295855 A JPH03295855 A JP H03295855A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- dielectric constant
- low
- composition
- porcelain composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 24
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 6
- 239000000919 ceramic Substances 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 abstract description 6
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 abstract description 5
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 3
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract description 3
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 abstract description 3
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 abstract description 2
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 abstract description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 abstract 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 13
- 238000005245 sintering Methods 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 6
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910001954 samarium oxide Inorganic materials 0.000 description 1
- 229940075630 samarium oxide Drugs 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
Description
【発明の詳細な説明】
Ｌ！上五五里玉上
本発明は、主にマイクロ波帯域と言われる領域において
使用される共振器等を構成する高周波用誘電体磁器組成
物に関する。[Detailed Description of the Invention] L! TECHNICAL FIELD The present invention relates to a dielectric ceramic composition for high frequency use, which constitutes a resonator etc. used mainly in a region called the microwave band.
従米辺孜ｌ
近年、自動車電話、携帯電話、コードレス電話などの無
線通信機に使用される空中線共用器（デュプレクサ−）
や電圧制御発振器等に使用される共振器、あるいはＣＡ
ＴＶ用チューナに使用されるフィルタ等に高周波用誘電
体磁器が多く用いられている。この様な共振器等におい
て高誘電率材料を使用することにより、高周波の波長を
真空中の１／ Ｅｉ（εｒ：比誘電率）の長さに短縮し
、かかる周波数における１波長、１／２波長、あるいは
１／４波長のマイクロ波を高周波誘電体磁器の中に閉じ
込め、所定の作用効果が得られるように、小形に構成し
たものが一般的に知られている。このような高周波用誘
電体磁器に要求される特性としては。In recent years, duplexers have been used in wireless communication equipment such as car phones, mobile phones, and cordless phones.
resonators used in voltage controlled oscillators, etc., or CA
High-frequency dielectric ceramics are often used in filters and the like used in TV tuners. By using high-permittivity materials in such resonators, the wavelength of high-frequency waves can be shortened to 1/Ei (εr: relative dielectric constant) length in vacuum, and 1 wavelength at such a frequency, 1/2 It is generally known to confine wavelength or 1/4 wavelength microwaves in high-frequency dielectric ceramics and construct them in a small size so as to obtain predetermined effects. What are the characteristics required of such high-frequency dielectric ceramics?
（１）誘電体中では電磁波の波長が３．／Ｊ’Ｔτ（但
し、εｒは比誘電率）に短縮され、同じ共振周波数なら
ば誘電率が大きい担手形化できるため、可能な限り誘電
率が大であること、
（２）高周波帯域での誘電損失が小さいこと、（３）共
振周波数の温度変化に対する変化率が少ないこと、すな
わち誘電率の温度依存性が小さくかつ安定であること、
の３特性が挙げられる。(1) In a dielectric material, the wavelength of electromagnetic waves is 3. /J'Tτ (where εr is the relative permittivity), and if the resonance frequency is the same, it can be made into a carrier shape with a high permittivity, so the permittivity should be as large as possible. (2) In the high frequency band The following three characteristics are mentioned: (3) the rate of change of the resonant frequency with respect to temperature change is small, that is, the temperature dependence of the dielectric constant is small and stable.
また、マイクロ波帯域でも自動車電話、パーソナル無線
、コードレステレホン等に用いられる比較的低周波帯域
とされるＩ ＧＨｚ程度の領域において適用する場合、
波長がかなり長くなるため、共振器等の小形化を図るた
めには誘電体磁器組成物としては誘電率がかなり高いも
のを必要とする。In addition, when applied in the microwave band, IGHz, which is a relatively low frequency band used for car phones, personal radios, cordless telephones, etc.
Since the wavelength is considerably long, a dielectric ceramic composition with a considerably high dielectric constant is required in order to downsize the resonator and the like.
従来、この種の誘電体磁器組成物としては、例えば、Ｂ
ａＯ−Ｎｄ２ｏｚ−ＴｉＯ□−Ｂｉ２Ｏａ系組成物、Ｂ
ａＯ−Ｎｄ２０ｘ−ＴｉＯ□−ＰｂＯ系組成物などが知
られている。Conventionally, as this type of dielectric ceramic composition, for example, B
aO-Nd2oz-TiO□-Bi2Oa-based composition, B
AO-Nd20x-TiO□-PbO compositions are known.
日が ゛しよ と る。The sun is rising.
しかしながら、これらの材料においても誘電率はεｒ＝
７０〜９０程度であり、それ以上の高い誘電率のものを
得ようとすると、急激にＱ値が劣化するか、あるいは温
度特性が劣化し、誘電率を上げ共振器等の小形化を図る
には限度があった。However, even in these materials, the dielectric constant is εr=
It is about 70 to 90, and if you try to obtain a dielectric constant higher than that, the Q value will deteriorate rapidly or the temperature characteristics will deteriorate, and it is necessary to increase the dielectric constant and make the resonator smaller. There was a limit.
また、誘電体グリーンシートに内部電極ペーストを印刷
してそれらを積層し、その後前記内部電極ペーストと前
記誘電体グリーンシートを同時焼結させ、この焼結体に
外部電極を形成した、いわゆる積層形の誘電体共振器、
フィルタとすることにより、内部導体形状を色々な形状
に設計し、前記焼結体の大きさを共振波長に比べて大幅
に小さくすることも考えられている。In addition, a so-called laminated type in which an internal electrode paste is printed on a dielectric green sheet and then laminated, and then the internal electrode paste and the dielectric green sheet are simultaneously sintered, and an external electrode is formed on this sintered body. dielectric resonator,
It is also being considered to design the internal conductor shape into various shapes and make the size of the sintered body significantly smaller than the resonant wavelength by using it as a filter.
しかしマイクロ波帯域で使用される電極には低抵抗であ
ることが要求されるため、この帯域における共振器等で
は一般に電極としてＡｕ、 Ａｇ、Ｃｕ、Ａ１等の金属
が使用されており、同時焼結させるにはそれらの金属の
融点よりも低い温度で焼結する組成物が必要になる。However, since electrodes used in the microwave band are required to have low resistance, metals such as Au, Ag, Cu, and A1 are generally used as electrodes in resonators in this band, and co-fired metals are used as electrodes. This requires compositions that sinter at temperatures lower than the melting points of those metals.
しかしながら、従来の高周波用誘電体磁器は１３００〜
１５００℃で焼結されており、マイクロ波帯域で適して
いるＡｕ、 Ａｇ、Ｃｕ等の金属材料を内部電極材料と
して採用することができないといった課題があった。However, conventional high-frequency dielectric porcelain has a
The problem is that metal materials such as Au, Ag, and Cu, which are sintered at 1500°C and are suitable for microwave bands, cannot be used as internal electrode materials.
本発明は上記した課題に鑑み発明されたものであって、
高周波用共振器等のより一層の小形化を可能とする、誘
電率が高く、誘電損失が低く、誘電率の温度依存性が小
さくかつ安定で、従って製造される誘電体共振器の共振
周波数の温度依存性が小さく、しかもＡｕ 、Ａｇ−Ｐ
ｄ等を内部電極材料として使用できる低温で焼結可能な
誘電体磁器組成物を提供することを目的としている。The present invention was invented in view of the above-mentioned problems, and
The resonant frequency of the manufactured dielectric resonator is high, the dielectric constant is low, the dielectric loss is low, and the temperature dependence of the dielectric constant is small and stable. Low temperature dependence, and Au, Ag-P
The object of the present invention is to provide a dielectric ceramic composition that can be sintered at low temperatures and can be used as an internal electrode material.
課題を解゛するだめの １
本発明者は上記課題に対して、研究を重ねた結果、Ｂａ
Ｏ１Ｎｄ２０３、Ｓｍ２０ａ、 Ｔｉｏ２． ｐｂｏ、
Ｂｉ２５３からなる系にＧｅＯ□、Ｂ２０１、ＺｎＯを
添加することによって、高誘電率で誘電率の温度依存性
の小さい、即ち共振周波数の温度依存性が小さく、かつ
、高Ｑ値の特性を有し、しかも、 Ａｕ、Ａｇ−Ｐｄを
内部導体として使用できる１０００〜１０５０℃の低温
で焼結できる誘電体磁器組成物が得られることを知見し
、本発明を完成するに至った。To solve the problem 1. As a result of repeated research on the above problem, the inventor has found that Ba
O1Nd203, Sm20a, Tio2. pbo,
By adding GeO□, B201, and ZnO to the system consisting of Bi253, it has the characteristics of a high dielectric constant and a small temperature dependence of the dielectric constant, that is, a small temperature dependence of the resonance frequency, and a high Q value. Moreover, it was discovered that a dielectric ceramic composition that can be sintered at a low temperature of 1,000 to 1,050°C can be obtained in which Au and Ag-Pd can be used as internal conductors, and the present invention has been completed.
即ち、本発明に係る誘電体磁器組成物は、組成式が
ＸＢａ０ｙ（（ＮｄｚＯａｌ＋−ａ （ＳｍａＯｓｌ
ｃｒ） ＺＴｉＯ７ｕＰｂｏ・ｖ ＢｉｚＣ１３
ただし
０．０９０ ＜χ＜０．１６０
０．１３０ ＜、ｙ＜０．１６０
０．６５０ ＜ ｚ ＜０．７００
０．０４５ ＜ ｕ ＜０．０８０
０．００５ ＜ ｖ ＜０．０４５
χ＋ｙ ＋ ｚ ＋ ｕ ＋ ｖ ” １０ ≦α＜
０．２５
で示される主成分に対し、副成分としてＧｅｍ、が１．
０〜４．０重量％
ＺｎＯが０７５〜３．５重量％及び
Ｂ２Ｏ３が０．７５〜３．５重量％
の割合で添加されていることを特徴としている。That is, the dielectric ceramic composition according to the present invention has a compositional formula of XBa0y((NdzOal+-a (SmaOsl
cr) ZTiO7uPbo・v BizC13 However, 0.090 <χ<0.160 0.130 <, y<0.160 0.650 <z <0.700 0.045 < u <0.080 0.005 < v < 0.045 χ+y + z + u + v ” 10 ≦α<
The main component is 0.25, and the subcomponent Gem is 1.
It is characterized in that ZnO is added in a proportion of 0 to 4.0% by weight, 075 to 3.5% by weight, and B2O3 is added in a proportion of 0.75 to 3.5% by weight.
土用
本発明の誘電体磁器組成物の主成分は、ＲＥＯ（希土類
酸化物） −ＢａＯ−ＴｉＯｘ系にｐｂｏとＢ１１０ａ
を加えた組成で、希土類酸化物としてＮｃｌａＯ，とＳ
ｍｘＯｓを用いている。そして、これに１０００℃〜１
０５０℃の低温焼結を可能とするため、副成分としてＧ
ｅＯ□、ＺｎＯ、Ｂａ５ｓを添加している。Doyo The main components of the dielectric ceramic composition of the present invention are REO (rare earth oxide) -BaO-TiOx system, pbo and B110a.
NclaO, and S as rare earth oxides.
mxOs is used. Then, add this to 1000℃~1
In order to enable low-temperature sintering of 050°C, G is added as a subcomponent.
eO□, ZnO, and Ba5s are added.
本発明においては、希土類酸化物としてＮｄ２Ｏ５とＳ
ｍ２０ｓの二種類を用いている。これは次の様な理由に
よる。この系において、誘電率、Ｑ値が良好で、焼結温
度の低い組成点においては、共振周波数の温度係数τｆ
を調整するために、希土類酸化物量（本発明においては
、Ｎｄ２Ｏ，とＳｍｚＯａのトータル量）を変化させる
と、他の特性が劣化する。他方、Ｎｄ、０． 、 Ｓ、
、０．は両方とも共振周波数の温度係数ｔｆをマイナス
側へ移行させる性質を有しているが、ＳｍａＯａの方が
その効果が大であり、両者の割合を考慮することにより
誘電率、Ｑ値をあまり変化させずにτｆを調整できるか
らである。従って、ＮｄｚＯｓとＳｍｚＯｓの割合を変
化させることにより、適正な範囲にｔｆが調整される。In the present invention, Nd2O5 and S are used as rare earth oxides.
Two types of m20s are used. This is due to the following reasons. In this system, at a composition point with good dielectric constant and Q value and low sintering temperature, the temperature coefficient of resonance frequency τf
When the amount of rare earth oxide (in the present invention, the total amount of Nd2O and SmzOa) is changed in order to adjust the characteristics, other characteristics deteriorate. On the other hand, Nd, 0. , S,
,0. Both have the property of shifting the temperature coefficient tf of the resonance frequency to the negative side, but SmaOa has a greater effect, and by considering the ratio of the two, the dielectric constant and Q value can be changed less. This is because τf can be adjusted without causing Therefore, by changing the ratio of NdzOs and SmzOs, tf can be adjusted to an appropriate range.
各成分が上記範囲を逸脱した場合、１０００℃〜１０５
０℃の低温での焼結が不可能になるが、あるいは可能な
場合でも誘電率εｒが低かったり、あるいは共振周波数
の温度系数が、±２０ｐｐｍ／”Ｃの範囲を出たり、あ
るいは、Ｑ値が、１５００以下と低くなる。If each component deviates from the above range, 1000℃~105℃
Sintering at a low temperature of 0℃ becomes impossible, or even if it is possible, the dielectric constant εr is low, or the temperature coefficient of the resonance frequency is out of the range of ±20ppm/''C, or the Q value However, it becomes low at 1500 or less.
！籍１ｄａム此較舅
（Ｉ）誘電体磁器の調整
■高純度の炭酸バリウム（ＢａＣＯ，ｌ、酸化ネオジウ
ｂ （ＮｄｚＯｓ）、酸化サマリウム（Ｓｍ２０ｇ）、
酸化チタン（ＴｘＯｚｌ 、酸化鉛（ｐｂｏ）、酸化ビ
スマス（Ｂｉ２０３）酸化ゲルマニウム（ＧｅＯ２１、
酸化亜鉛（Ｚｎ０１、無水ホウ酸（８，０３１をそれぞ
れ第１表に示した比率で秤量した。! Adjustment of dielectric porcelain ■High purity barium carbonate (BaCO, l, neodymium oxide (NdzOs), samarium oxide (Sm20g),
Titanium oxide (TxOzl), lead oxide (pbo), bismuth oxide (Bi203), germanium oxide (GeO21,
Zinc oxide (Zn01) and boric anhydride (8,031) were weighed in the ratios shown in Table 1, respectively.
■上記出発原料をボールミルにて一昼夜湿式混合した後
乾燥させた。(2) The above starting materials were wet mixed in a ball mill overnight and then dried.
■上記混合物を９００℃程度の温度で約２時間仮焼した
。(2) The above mixture was calcined at a temperature of about 900°C for about 2 hours.
■仮焼した混合物をボールミルにて一昼夜湿式粉砕した
後乾燥させた。■The calcined mixture was wet-pulverized in a ball mill for a day and night, and then dried.
■上記乾燥粉末に約１重量％のバインダを添加して整粒
した。(2) Approximately 1% by weight of binder was added to the above dry powder and the powder was sized.
■約１０００ｋｇ／ｃｍ”の圧力で成形し、９７５−１
３５０°Ｃで約２時間空気中にて焼成した。■Molded with a pressure of approximately 1000 kg/cm", 975-1
It was baked in air at 350°C for about 2 hours.
（ＩＩ）特性の測定
得られた誘電体磁器を誘電体円柱共振器法により、共振
周波数３．０〜４．０ＧＨｚにおいて誘電率、Ｑ値及び
共振周波数の温度係数について測定した。(II) Measurement of Characteristics The obtained dielectric ceramic was measured for dielectric constant, Q value, and temperature coefficient of resonance frequency at a resonance frequency of 3.0 to 4.0 GHz using the dielectric cylinder resonator method.
結果を第１表に示す。The results are shown in Table 1.
Ｃ以下余白）
以下実施例のものと比較例のものとを比べ、本発明に係
る組成範囲外での比較例における問題点を述べる。(Blank below C) Below, the examples will be compared with the comparative examples, and problems in the comparative examples outside the composition range according to the present invention will be described.
χ＞ ０．１６０の場合：Ｎｏ、１０の様に焼結温度が
高くなる。When χ>0.160: No. 10, the sintering temperature becomes high.
ン、 ＜ ０．０９０の場合 Ｎ０９８の様にＱ値が低
くなる。When < 0.090, the Q value becomes low like N098.
ｙ＞０．１６０の場合・Ｎｏ、１０の様に焼結温度が高
くなる。In the case of y>0.160, the sintering temperature becomes high as in No. 10.
ｙ＜０．１３０の場合 Ｎｏ、９の様にＱ値が低くなる
。When y<0.130, the Q value becomes low like No.9.
ｚ＞０．７２６の場合：Ｎｏ、１１の様にＱ値が低くな
る。When z>0.726: No, the Q value becomes low like 11.
ｚ＜０．６５０の場合 Ｎｏ、 １２の様にＱ値が低く
なる。When z<0.650, the Q value becomes low like No. 12.
ｕ＞０．０８０の場合：Ｎｏ、１２の様にＱ値が低くな
る。When u>0.080: No, the Q value becomes low like 12.
ｕ＜０．０４５の場合：Ｎｏ、１３の様にＱ値が低くな
る。When u<0.045: No, the Q value becomes low like 13.
ｖ＞０．０４５の場合：Ｎｏ、１３の様にＱ値が低くな
る。When v>0.045: No, the Q value becomes low like 13.
ｖ＜０．００３の場合：Ｎｏ、１４の様に焼結温度が高
くなる６
ａ＞０．２５の場合：Ｎｏ、５の様にてｆが負側に大と
なる。When v<0.003: No. 6, the sintering temperature becomes high as in 14. When a>0.25: No. 5, f becomes large on the negative side.
ＧｅＯ□〉４０重量％の場合：Ｎｏ、２１の様に焼結温
度が高くなる。When GeO□>40% by weight: As in No. 21, the sintering temperature becomes high.
Ｇｅ０ｚ＜１．０重量％の場合：Ｎｏ、２３の様にＱ値
が低くなる。In the case of Ge0z<1.0% by weight: the Q value becomes low as in No. 23.
ＺｎＯ＞３．５重量％の場合：Ｎｏ、２２の様にＱ値が
低（なる。When ZnO>3.5% by weight: No. The Q value is low (as in 22).
ＺｎＯ＜０．７５重量％の場合：Ｎｏ、２３の様にＱ値
が低くなる。When ZnO<0.75% by weight: No. 23, the Q value becomes low.
８２０ｍ＞ ３．５重量％の場合：Ｎｏ、２３の様にＱ
値が低くなる。820m > 3.5% by weight: No, Q like 23
value becomes lower.
Ｂ２（ｈ＜０．５重量％の場合： Ｎｏ、２２ 、Ｎｏ
、２４の様に焼結温度が高くなる。B2 (when h<0.5% by weight: No, 22, No
, 24, the sintering temperature becomes high.
このように比較例のものでは上記のような問題点が残る
。As described above, the above-mentioned problems remain in the comparative example.
一方、本発明に係る組成の範囲内のものであるＮｏ、
１．２．３．４．６．７．１５．１６．１７．１８．１
９．２０については、誘電率がεｒ ＝ ６９．３〜７
５．６と高く、Ｑ値もｆ−Ｑ＝１６９１〜２８３６と高
く、また共振周波数の温度係数てｆもτｆ・−１６，５
〜＋ ６．３ｐｐｍ／’Ｃと安定で、しかも９７５〜１
０５０℃の低温で焼結でき、本発明の目的が達成されて
いる。On the other hand, No. which is within the composition range according to the present invention,
1.2.3.4.6.7.15.16.17.18.1
9.20, the dielectric constant is εr = 69.3~7
5.6, the Q value is high at f-Q=1691~2836, and the temperature coefficient f of the resonant frequency is τf・-16.5.
~+6.3ppm/'C and stable, and 975~1
It can be sintered at a low temperature of 050°C, and the object of the present invention is achieved.
光ｌしΣ迩果
以上の説明により明らかなように、本発明に係る誘電体
磁器組成物にあっては、ＢａＯ，ＮｄｚＯｓＳｍ２０ｘ
、Ｔｌ０ｚ、ｐｂｏ、ＢｊｚＯｓを主成分とし、副成分
としてＧｅＯ□、 ＺｎＯ１Ｂ２０３が所定量添加され
ており、誘電率及びＱ値が高く、しかも共振周波数の温
度依存性が小さく、さらにはＡｕ、 Ａｇ−Ｐｄを内部
電極として使用できる、低温で焼結可能な誘電体磁器組
成物を得ることができる。As is clear from the above explanation, in the dielectric ceramic composition according to the present invention, BaO, NdzOsSm20x
, Tl0z, pbo, and BjzOs as main components, and a predetermined amount of GeO□ and ZnO1B203 are added as subcomponents, and the dielectric constant and Q value are high.Moreover, the temperature dependence of the resonance frequency is small, and furthermore, Au, Ag- A dielectric ceramic composition that can be sintered at low temperatures and can use Pd as an internal electrode can be obtained.
従って、高周波用共振器、フィルタ等の大幅な小形化が
可能になり、その有用性は極めて大きい。Therefore, it becomes possible to significantly downsize high-frequency resonators, filters, etc., and its usefulness is extremely large.
Claims (1)
＿２Ｏ＿３）＿α｝・ｚＴｉＯ＿２・ｕＰｂＯ・ｖＢｉ
＿２Ｏ＿３ ただし ０．０９０＜ｘ＜０．１６０ ０．１３０＜ｙ＜０．１６０ ０．６５０＜ｚ＜０．７００ ０．０４５＜ｕ＜０．０８０ ０．００５＜ｖ＜０．０４５ ｘ＋ｙ＋ｚ＋ｕ＋ｖ＝１ ０≦α＜０．２５ で示される主成分に対し、副成分として ＧｅＯ＿２が１．０〜４．０重量％ ＺｎＯが０．７５〜３．５重量％及び Ｂ＿２Ｏ＿３が０．７５〜３．５重量％ の割合で添加されていることを特徴とする誘電体磁器組
成物。(1) The compositional formula is xBaO・y{(Nd_2O_3)_1_-_α(Sm
_2O_3)_α}・zTiO_2・uPbO・vBi
_2O_3 However, 0.090<x<0.160 0.130<y<0.160 0.650<z<0.700 0.045<u<0.080 0.005<v<0.045 x+y+z+u+v=1 With respect to the main component represented by 0≦α<0.25, GeO_2 is 1.0 to 4.0% by weight as subcomponents, ZnO is 0.75 to 3.5% by weight, and B_2O_3 is 0.75 to 3.5% by weight. A dielectric ceramic composition characterized in that it is added in a proportion of % by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2097315A JP2526702B2 (en) | 1990-04-11 | 1990-04-11 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2097315A JP2526702B2 (en) | 1990-04-11 | 1990-04-11 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03295855A true JPH03295855A (en) | 1991-12-26 |
| JP2526702B2 JP2526702B2 (en) | 1996-08-21 |
Family
ID=14189056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2097315A Expired - Fee Related JP2526702B2 (en) | 1990-04-11 | 1990-04-11 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2526702B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5264403A (en) * | 1991-09-27 | 1993-11-23 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass |
| JPH05334914A (en) * | 1992-05-29 | 1993-12-17 | Sumitomo Metal Ind Ltd | Dielectric porcelain composition |
| US5292694A (en) * | 1991-09-27 | 1994-03-08 | Ngk Insulators, Ltd. | Method of producing low temperature firing dielectric ceramic composition containing B2 O3 |
| US5479140A (en) * | 1991-09-27 | 1995-12-26 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5683790A (en) * | 1992-12-28 | 1997-11-04 | Tdk Corporation | Multilayer ceramic parts |
| US6340649B1 (en) | 1999-03-16 | 2002-01-22 | Tdk Corporation | Composition of dielectric ceramics and producing method thereof |
-
1990
- 1990-04-11 JP JP2097315A patent/JP2526702B2/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5264403A (en) * | 1991-09-27 | 1993-11-23 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass |
| US5292694A (en) * | 1991-09-27 | 1994-03-08 | Ngk Insulators, Ltd. | Method of producing low temperature firing dielectric ceramic composition containing B2 O3 |
| US5304521A (en) * | 1991-09-27 | 1994-04-19 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5350721A (en) * | 1991-09-27 | 1994-09-27 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZNO-B203-SI02 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5458981A (en) * | 1991-09-27 | 1995-10-17 | Ngk Insulators, Ltd. | Method of producing low temperature firing dielectric ceramic composition containing B2 O3 |
| US5479140A (en) * | 1991-09-27 | 1995-12-26 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5485132A (en) * | 1991-09-27 | 1996-01-16 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5488019A (en) * | 1991-09-27 | 1996-01-30 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5493262A (en) * | 1991-09-27 | 1996-02-20 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| JPH05334914A (en) * | 1992-05-29 | 1993-12-17 | Sumitomo Metal Ind Ltd | Dielectric porcelain composition |
| US5683790A (en) * | 1992-12-28 | 1997-11-04 | Tdk Corporation | Multilayer ceramic parts |
| US6340649B1 (en) | 1999-03-16 | 2002-01-22 | Tdk Corporation | Composition of dielectric ceramics and producing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2526702B2 (en) | 1996-08-21 |
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