JPH03290358A - Dielectric ceramic composition - Google Patents
Dielectric ceramic compositionInfo
- Publication number
- JPH03290358A JPH03290358A JP2090917A JP9091790A JPH03290358A JP H03290358 A JPH03290358 A JP H03290358A JP 2090917 A JP2090917 A JP 2090917A JP 9091790 A JP9091790 A JP 9091790A JP H03290358 A JPH03290358 A JP H03290358A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic composition
- dielectric ceramic
- dielectric
- frequency
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 23
- 239000000919 ceramic Substances 0.000 title claims abstract description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 12
- 238000005245 sintering Methods 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 239000002075 main ingredient Substances 0.000 abstract 3
- 229910011255 B2O3 Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 1
- 239000004615 ingredient Substances 0.000 abstract 1
- 238000002156 mixing Methods 0.000 abstract 1
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 229910001954 samarium oxide Inorganic materials 0.000 description 2
- 229940075630 samarium oxide Drugs 0.000 description 2
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910003087 TiOx Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 244000245420 ail Species 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000004611 garlic Nutrition 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産１ニ］旧隻立葺
本発明は、主にマイクロ波帯域と言われる領域において
使用される共振器等を構成する高周波用誘電体磁器組成
物に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high-frequency dielectric ceramic composition constituting a resonator or the like used mainly in a region called a microwave band.
ｋ里立技凸
近年、自動車電話、携帯電話、コードレス電話などの無
線通信機に使用される空中線共用器（デュプレクサ−）
や電圧制御発振器等に使用される共振器、あるいはＣＡ
ＴＶ用チューナに使用されるフィルタ等に高周波用誘電
体磁器が多く用いられている。この様な共振器等におい
て高誘電率材料を使用することにより、高周波の波長を
真空中の１ ／ 「蒜（Ｅ ｒ ：比誘電率）の長さに
短縮し、かかる周波数における１波長、ｌ／２波長、あ
るいは１／４波長のマイクロ波を高周波誘電体磁器の中
に閉じ込め、所定の作用効果が得られるように、小形に
構成したものが一般的に知られている。このような高周
波用誘電体磁器に要求される特性としては、
（１）誘電体中では′ｒ！Ｌｍ波の波長が１／−ｒＴ７
（但し、εｒは比誘電率）に短縮され、同じ共振周波数
ならば誘電率が大きい程小形化できるため、可能な限り
誘電率が大であること、
（２）高周波帯域での誘電損失が小さいこと、（３）共
振周波数の温度変化に対する変化率が少ないこと、すな
わち誘電率の温度依存性が小さくかつ安定であること、
の３特性が挙げられる。In recent years, duplexers have been used in wireless communication devices such as car phones, mobile phones, and cordless phones.
resonators used in voltage controlled oscillators, etc., or CA
High-frequency dielectric ceramics are often used in filters and the like used in TV tuners. By using high-permittivity materials in such resonators, the wavelength of high-frequency waves can be shortened to 1/the length of a garlic (E r : relative dielectric constant) in vacuum, and one wavelength at such a frequency, l It is generally known that microwaves of 1/2 wavelength or 1/4 wavelength are confined in high-frequency dielectric ceramics and configured in a small size so as to obtain a predetermined effect.Such high-frequency The characteristics required for dielectric ceramics for use are: (1) In the dielectric material, the wavelength of the 'r!Lm wave is 1/-rT7
(However, εr is the relative permittivity), and if the resonance frequency is the same, the larger the permittivity, the smaller the size. Therefore, the permittivity must be as large as possible. (2) Dielectric loss in the high frequency band is small. (3) The rate of change of the resonant frequency with respect to temperature change is small, that is, the temperature dependence of the dielectric constant is small and stable.
また、マイクロ波帯域でち自動車電話、パーソナル無線
、コードレステレホン等に用いられる比較的低周波帯域
とされるｌ ＧＨｚ程度の領域において適用する場合、
波長がかなり長くなるため、共振器等の小形化を図るた
めには誘電体磁器組成物としては誘電率がかなり高いち
のを必要とする。In addition, when applied in the microwave band, which is a relatively low frequency band used for car phones, personal radios, cordless telephones, etc., in the region of about 1 GHz,
Since the wavelength is quite long, the dielectric ceramic composition needs to have a fairly high dielectric constant in order to miniaturize the resonator and the like.
従来、この種の誘電体磁器組成物としては、例えば、Ｂ
ａｎＢａｎ−Ｎｄ１Ｏｓ−ＴｉＯｚ−Ｂｉ系組組成、Ｂ
ａ０−Ｎｄ、０ｓ−ＴｉＯｘ−ＰｂＯ系組成物などが知
られている。Conventionally, as this type of dielectric ceramic composition, for example, B
anBan-Nd1Os-TiOz-Bi group composition, B
A0-Nd, 0s-TiOx-PbO-based compositions, etc. are known.
日が”しよ と る課
しかしながら、これらの材料においても誘電率はεｒ＝
７０〜９０程度であり、それ以上の高い誘電率のちのを
得ようとすると、急激にＱ値が劣化する等、温度特性が
劣化し、誘電率を上げ共振器等の小形化を図るには限度
があった。However, even in these materials, the dielectric constant is εr=
It is about 70 to 90, and if you try to obtain a higher dielectric constant, the Q value will deteriorate rapidly and the temperature characteristics will deteriorate. There was a limit.
また、誘電体グリーンシートに内部電極ペーストを印刷
してそれらを積層し、その後前記内部電極ペーストと前
記誘電体グリーンシートを同時焼結させ、この焼結体に
外部電極を形成した、いわゆる積層形の誘電体共振器、
フィルタとすることにより、内部導体形状を色々な形状
に設計し、前記焼結体の大きさを共振波長に比べて大幅
に小さくすることも考えられている。In addition, a so-called laminated type in which an internal electrode paste is printed on a dielectric green sheet and then laminated, and then the internal electrode paste and the dielectric green sheet are simultaneously sintered, and an external electrode is formed on this sintered body. dielectric resonator,
It is also being considered to design the internal conductor shape into various shapes and make the size of the sintered body significantly smaller than the resonant wavelength by using it as a filter.
しかしマイクロ波帯域で使用される電極には低抵抗であ
ることが要求されるため、この帯域における共振器等で
は一般に電極としてＡｕ、 Ａｇ、Ｃｕ、Ａ１等の金属
が使用されており、同時焼結させるにはそれらの金属の
融点よりも低い温度で焼結する組成物が必要になる。However, since electrodes used in the microwave band are required to have low resistance, metals such as Au, Ag, Cu, and A1 are generally used as electrodes in resonators in this band, and co-fired metals are used as electrodes. This requires compositions that sinter at temperatures lower than the melting points of those metals.
しかしながら、従来の高周波用誘電体磁器は１３００〜
１５００℃で焼結されており、マイクロ波帯域で適して
いるＡｕ、 Ａｇ、Ｃｕ等の金属材料を内部電極材料と
して採用することができないといった課題があった。However, conventional high-frequency dielectric porcelain has a
The problem is that metal materials such as Au, Ag, and Cu, which are sintered at 1500°C and are suitable for microwave bands, cannot be used as internal electrode materials.
本発明は上記した課題に鑑み発明されたものであって、
高周波用共振器等のより一層の小形化を可能とする、誘
電率が高く、誘電損失が低く、誘電率の温度依存性が小
さくかつ安定で、従って製造される誘電体共振器の共振
周波数の温度依存性が小さく、しかも低温で焼結される
Ａｕ 、Ａｇ−Ｐｄ等を内部電極材料として使用できる
低温で焼結可能な誘電体磁器組成物を提供することを目
的としている。The present invention was invented in view of the above-mentioned problems, and
The resonant frequency of the manufactured dielectric resonator is high, the dielectric constant is low, the dielectric loss is low, and the temperature dependence of the dielectric constant is small and stable. The object of the present invention is to provide a dielectric ceramic composition that has low temperature dependence and can be sintered at low temperatures, in which Au, Ag-Pd, etc., which are sintered at low temperatures, can be used as internal electrode materials.
唄 を ゛するための
本発明者は上記目的を達成すべく研究を重ねた結果、Ｂ
ａＯ１ＮｄｚＯｓ、 Ｓｍ１Ｏａ、 Ｔｉａ２、ｐｂｏ
、Ｂｉｔ’ｓからなる系にＳｉｎｇ、 ＺｎＯ１Ｂｉａ
ｓを添加することによって、高誘電率を有し、誘電率の
温度依存性、共振器における共振周波数の温度依存性が
小さく、かつ高Ｑ値の特性を有し、しかも、Ａｕ、 Ａ
ｇ−Ｐｄを内部電極として使用できる１０００〜１０５
０℃の低温で焼結可能な誘電体磁器組成物が得られるこ
とを知見し、本発明を完成するに至った。As a result of repeated research to achieve the above object, the inventor of the present invention has developed a B.
aO1NdzOs, Sm1Oa, Tia2, pbo
, Bit's Sing, ZnO1Bia
By adding s, it has a high dielectric constant, a small temperature dependence of the dielectric constant, a small temperature dependence of the resonant frequency in the resonator, and a high Q value.
1000-105 where g-Pd can be used as an internal electrode
It was discovered that a dielectric ceramic composition that can be sintered at a low temperature of 0° C. was obtained, and the present invention was completed.
即ち、本発明に係る誘電体磁器組成物は、組成式が
χＢａＯ−ｙＮｄｚ０３−ｚＳｍｚ０３・ｕＴｉＯｚ・
ｖＰｂｌ）ｗＢｉｚＯｓただし、０．０８０ ＜ｘ＜
０．１６００、１２１ ＜ ｙ＜、０．１３０
０．００５ ＜ ｚ ＜０．０３０
０．６５０ ＜ ｕ ＜ ０．７００
０．０４５ ＜ ｖ ＜０．０１０
０．００５ ＜ｗ＜０．０４５
ｘ十ｙ ＋ｚ ＋ｕ＋ｖ＋ｗ＝ １
で示される主成分に対し、副成分としてＳｉＯ□が１．
２〜４０重量％
ＺｎＯが０．２〜３．５重量％及び
Ｂ２Ｏ．が０．１〜２．５重量％
の割合で添加されていることを特徴としている。That is, the dielectric ceramic composition according to the present invention has a compositional formula of χBaO-yNdz03-zSmz03・uTiOz・
vPbl) wBizOs However, 0.080 <x<
0.1600, 121 < y <, 0.130 0.005 < z < 0.030 0.650 < u < 0.700 0.045 < v < 0.010 0.005 < w < 0.045 x With respect to the main component represented by y + z + u + v + w = 1, SiO□ is 1.
2-40% by weight ZnO 0.2-3.5% by weight and B2O. is added in a proportion of 0.1 to 2.5% by weight.
惺里
本発明に係る誘電体磁器組成物は、主成分としてＲＥＯ
（希土類酸化物） −ＢａＯ−ＴｉＯｘ系を基本として
おり、希土類酸化物としてＮｄｚＯｓとＳｍ＊Ｏｓとが
用いられ、それにＰｂＯとＢｉＪ＊とが添加されている
。そして、１０００℃〜１０５０℃の低温焼結を可能と
するため、副成分として、５４０ａ、ＺｎＯ１Ｂ２Ｏ．
が添加されている。Eri The dielectric ceramic composition according to the present invention contains REO as a main component.
(Rare earth oxide) Based on the -BaO-TiOx system, NdzOs and Sm*Os are used as rare earth oxides, and PbO and BiJ* are added thereto. In order to enable low-temperature sintering of 1000°C to 1050°C, 540a, ZnO1B2O.
is added.
各成分が上記範囲を逸脱した場合、１０００℃〜１０５
０℃の低温での焼結が不可能になるか、あるいは可能な
場合でち誘電率εｒが低かったり、あるいは共振周波数
の温度系数が、±２Ｏｐｐｍ ／”Ｃの範囲を出たり、
あるいは、Ｑ値が、１５００以下と低くなる。If each component deviates from the above range, 1000℃~105℃
Sintering at a low temperature of 0°C becomes impossible, or if it is possible, the dielectric constant εr is low, or the temperature coefficient of the resonance frequency goes out of the range of ±2 Oppm/”C,
Alternatively, the Q value becomes as low as 1500 or less.
実施１ｕ量ｎＬ校倒
（Ｉ）誘電体磁器の調整
■高純度の炭酸バリウム（ＢａＣＯａ）、酸化ネオジウ
ム（Ｎｄｚｏｓ） 、酸化サマリウム（Ｓｍ−Ｏｉ）、
酸化チタン（ＴｉＯ□）、酸化鉛（ｐｂｏ）、酸化ビス
マス（ＢｉＪｓｌ、二酸化ケイ素（Ｓ１０２１酸化亜鉛
（ＺｎＯｌ 。Implemented 1U amount nL calibration (I) Adjustment of dielectric porcelain ■High purity barium carbonate (BaCOa), neodymium oxide (Ndzos), samarium oxide (Sm-Oi),
Titanium oxide (TiO□), lead oxide (pbo), bismuth oxide (BiJsl), silicon dioxide (S1021 zinc oxide (ZnOl).
無水ホウ酸（ｅ、ｏ、）をそれぞれ、第１表に示した比
率で秤量した。Boric anhydride (e, o,) was weighed in the proportions shown in Table 1, respectively.
■上記出発原料をボールミルにて一昼夜湿式混合した後
乾燥させた。(2) The above starting materials were wet mixed in a ball mill overnight and then dried.
■上記混合物を９００℃程度の温度で約２時間仮焼した
。(2) The above mixture was calcined at a temperature of about 900°C for about 2 hours.
■仮焼した混合物をボールミルにて一昼夜湿式粉砕した
後乾燥した。■The calcined mixture was wet-pulverized in a ball mill for a day and night, and then dried.
■上記乾燥粉末に約１重量％のバインダを添加して整粒
した。(2) Approximately 1% by weight of binder was added to the above dry powder and the powder was sized.
■約１０００ｋｇ／ｃｍ”の圧力で成形し、１０００−
１３５０℃で約２時間空気中にて焼成した。■Molded with a pressure of about 1000kg/cm", 1000-
It was fired in air at 1350°C for about 2 hours.
（ＩＩ）特性の測定
得られた誘電体磁器を誘電体円柱共振器法により、共振
周波数３．０〜４．０ＧＨｚにおいて誘電率、Ｑ値及び
共振周波数の温度係数について測定した。(II) Measurement of Characteristics The obtained dielectric ceramic was measured for dielectric constant, Q value, and temperature coefficient of resonance frequency at a resonance frequency of 3.0 to 4.0 GHz using the dielectric cylinder resonator method.
結果を第１表に示す。The results are shown in Table 1.
（以下余白）
以下実施例のものと比較例のものとを比べ、本発明に係
る組成範囲外での比較例における問題点を述べる。(The following is a blank space) Below, the examples will be compared with the comparative examples, and problems in the comparative examples outside the composition range according to the present invention will be described.
χ＞０．１６０の場合：Ｎｏ、５の様に焼結温度が１１
００℃以上必要になり本発明の目的を達成できない。When χ>0.160: No. 5, the sintering temperature is 11
00° C. or more is required, making it impossible to achieve the purpose of the present invention.
χ＜ ｏ、 ｏａｏの場合：Ｎｏ、１２の様にＱ値が低
くなる。When χ<o, oao: No, the Q value becomes low like 12.
ｙ＞０．１３０の場合：Ｎｏ、６の様に焼結温度が１１
００℃以上必要となる。If y>0.130: No. 6, the sintering temperature is 11
00°C or higher is required.
ｙ＜０．１２１の場合：Ｎｏ、７の様に焼結温度が１１
００℃以上になる。If y<0.121: No. 7, the sintering temperature is 11
The temperature will exceed 00℃.
ｚ＞０．０３０の場合：Ｎｏ、９の様にｔｆが負側に大
となる。When z>0.030: No, tf becomes larger on the negative side as in 9.
ｚ＜０．００５の場合：Ｎｏ、８の様にｔｆが正側に大
となる。When z<0.005: No, tf increases on the positive side as in 8.
ｕ＞０．７００の場合：Ｎｏ、７の様に焼結温度が１１
００℃以上になる。When u > 0.700: No. 7, the sintering temperature is 11
The temperature will exceed 00℃.
ｕ＜０．６５０の場合：Ｎｏ、５の様にＱ値が低くなる
。When u<0.650: No, the Q value becomes low like 5.
Ｖ ＞ ０．１００の場合：Ｎｏ、１２の様にＱ値が低
くなる。When V > 0.100: No, the Q value becomes low like 12.
ｖ＜０．０４５の場合・Ｎｏ、 １３の様にＱ値が低く
なる。When v<0.045, the Q value becomes low as in No. 13.
ｗ ＞ ０．０４５の場合：Ｎｏ、１３の様にＱ値が低
くなる。When w > 0.045: No, the Q value becomes low like 13.
ｗ ＜ ０．００５の場合：Ｎｏ、１５の様にｚｆが正
側に大となる。When w < 0.005: No, zf becomes larger on the positive side as in 15.
ＳｉＯ□〉４，０重量％の場合：Ｎｏ、３の様にεｒが
小となる。In the case of SiO□>4.0% by weight: εr becomes small as in No. 3.
５１０２＜１．２重量％の場合：Ｎｏ、２、Ｎｏ、１８
、Ｎｏ、２１の様に焼結温度が１１００°Ｃ以上にな
る。When 5102<1.2% by weight: No, 2, No, 18
, No. 21, the sintering temperature is 1100°C or higher.
ＺｎＯ＞３．５重量％の場合：Ｎｏ、２４の様にＱ値が
低くなる。In the case of ZnO>3.5% by weight: the Q value becomes low as in No. 24.
ＺｎＯ＜０．２重量％の場合：Ｎｏ、１９の様に焼結温
度が１１００℃以上になる。When ZnO<0.2% by weight: No. 19, the sintering temperature is 1100° C. or higher.
ＢｚＯａ＞２．５重量％の場合：Ｎｏ、２６の様にＱ値
が低くなる。When BzOa>2.5% by weight: No. 26, the Q value becomes low.
Ｂａ０ｓ＜０．１重量％の場合：Ｎｏ、１６の様に焼結
温度が１１００℃以上になる。When Ba0s<0.1% by weight: No. 16, the sintering temperature is 1100° C. or higher.
このように比較例のものでは上記のような問題点が残る
。As described above, the above-mentioned problems remain in the comparative example.
一方、本発明に係る組成の範囲内のものであるＮＯ，１
，４，１Ｏ１１１，１４，１７，２Ｏ，２２，２３，２
５については、いずれも誘電率がεｒ＝６５３〜７８．
２と高く、Ｑ値もｆ Ｘ Ｑ ＝ １５３７−２６５０
と高く、又、共振周波数の温度係数も、ｔｆ ：＝−１
０，８−＋９． ｌｐｐｍ／’Ｃと安定で、しかも１０
００〜１０５０℃で焼結でき、本発明の目的が達成され
ている。On the other hand, NO,1 which is within the composition range according to the present invention
,4,1O111,14,17,2O,22,23,2
5, the dielectric constant is εr=653 to 78.
2, and the Q value is f X Q = 1537-2650
Also, the temperature coefficient of the resonant frequency is tf :=-1
0,8-+9. Stable at lppm/'C and 10
It can be sintered at 00 to 1050°C, and the object of the present invention is achieved.
犬！四と１里
以上の説明により明らかなように、本発明に係る誘電体
磁器組成物にあっては、ＢａＯ１ＮｄａＯｓ、Ｓｍ、０
．、Ｔｉ０ｚ、ＰｂＯ，Ｂｉ、Ｏ，を主成分とし、副成
分としてＳｉｎｇ、ＺｎＯ５Ｂ２Ｏ３が所定量添加され
ており、誘電率及びＱ値が高く、しかち共振周波数の温
度依存性が小さく、さらにはＡｕ、 Ａｇ−Ｐｄを内部
電極として使用できる、低温で焼結可能な誘電体磁器組
成物を得ることができる。dog! As is clear from the explanation above, the dielectric ceramic composition according to the present invention contains BaO1NdaOs, Sm, 0
．． , Ti0z, PbO, Bi, and O, and a predetermined amount of Sing and ZnO5B2O3 are added as subcomponents, and the dielectric constant and Q value are high, and the temperature dependence of the resonance frequency is small. , it is possible to obtain a dielectric ceramic composition that can be sintered at low temperatures and in which Ag-Pd can be used as an internal electrode.
従って、高周波用共振器、フィルタ等の大幅な小形化が
可能になり、その有用性は極めて大きい。Therefore, it becomes possible to significantly downsize high-frequency resonators, filters, etc., and its usefulness is extremely large.
Claims (1)
ｉＯ＿２・ｖＰｂＯ・ｗＢｉ＿２Ｏ＿３ただし、０．０
８０＜ｘ＜０．１６０ ０．１２１＜ｙ＜０．１３０ ０．００５＜ｚ＜０．０３０ ０．６５０＜ｕ＜０．７００ ０．０４５＜ｖ＜０．０１０ ０．００５＜ｗ＜０．０４５ ｘ＋ｙ＋ｚ＋ｕ＋ｖ＋ｗ＝１ で示される主成分に対し、副成分として ＳｉＯ＿２が１．２〜４．０重量％ ＺｎＯが０．２〜３．５重量％及び Ｂ＿２Ｏ＿３が０．１〜２．５重量％ の割合で添加されていることを特徴とする誘電体磁器組
成物。(1) The composition formula is xBaO・yNd_2O_3・zSm_2O_3・uT
iO_2・vPbO・wBi_2O_3 However, 0.0
80<x<0.160 0.121<y<0.130 0.005<z<0.030 0.650<u<0.700 0.045<v<0.010 0.005<w<0 .045 With respect to the main component represented by A dielectric ceramic composition characterized in that it is added in a proportion of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2090917A JPH0717444B2 (en) | 1990-04-04 | 1990-04-04 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2090917A JPH0717444B2 (en) | 1990-04-04 | 1990-04-04 | Dielectric porcelain composition |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8052996A Division JPH08277161A (en) | 1996-03-11 | 1996-03-11 | Dielectric ceramic composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03290358A true JPH03290358A (en) | 1991-12-20 |
| JPH0717444B2 JPH0717444B2 (en) | 1995-03-01 |
Family
ID=14011777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2090917A Expired - Lifetime JPH0717444B2 (en) | 1990-04-04 | 1990-04-04 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0717444B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5264403A (en) * | 1991-09-27 | 1993-11-23 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass |
| US5292694A (en) * | 1991-09-27 | 1994-03-08 | Ngk Insulators, Ltd. | Method of producing low temperature firing dielectric ceramic composition containing B2 O3 |
| US5479140A (en) * | 1991-09-27 | 1995-12-26 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5683790A (en) * | 1992-12-28 | 1997-11-04 | Tdk Corporation | Multilayer ceramic parts |
| EP1109756A1 (en) * | 1998-08-03 | 2001-06-27 | CTS Corporation | Barium neodymium titanate dielectric ceramic composition incorporating samarium oxide for improved electrical performance |
| KR100444224B1 (en) * | 2001-11-13 | 2004-08-16 | 삼성전기주식회사 | Dielectric Ceramic Compositions |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS618806A (en) * | 1984-06-22 | 1986-01-16 | 株式会社村田製作所 | High frequency dielectric porcelain composition |
| JPS6156407A (en) * | 1984-08-28 | 1986-03-22 | 京セラ株式会社 | Laminated porcelain capacitor |
-
1990
- 1990-04-04 JP JP2090917A patent/JPH0717444B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS618806A (en) * | 1984-06-22 | 1986-01-16 | 株式会社村田製作所 | High frequency dielectric porcelain composition |
| JPS6156407A (en) * | 1984-08-28 | 1986-03-22 | 京セラ株式会社 | Laminated porcelain capacitor |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5485132A (en) * | 1991-09-27 | 1996-01-16 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5292694A (en) * | 1991-09-27 | 1994-03-08 | Ngk Insulators, Ltd. | Method of producing low temperature firing dielectric ceramic composition containing B2 O3 |
| US5304521A (en) * | 1991-09-27 | 1994-04-19 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5350721A (en) * | 1991-09-27 | 1994-09-27 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZNO-B203-SI02 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5458981A (en) * | 1991-09-27 | 1995-10-17 | Ngk Insulators, Ltd. | Method of producing low temperature firing dielectric ceramic composition containing B2 O3 |
| US5479140A (en) * | 1991-09-27 | 1995-12-26 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5264403A (en) * | 1991-09-27 | 1993-11-23 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass |
| US5488019A (en) * | 1991-09-27 | 1996-01-30 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5493262A (en) * | 1991-09-27 | 1996-02-20 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5683790A (en) * | 1992-12-28 | 1997-11-04 | Tdk Corporation | Multilayer ceramic parts |
| EP1109756A1 (en) * | 1998-08-03 | 2001-06-27 | CTS Corporation | Barium neodymium titanate dielectric ceramic composition incorporating samarium oxide for improved electrical performance |
| EP1109756A4 (en) * | 1998-08-03 | 2006-07-19 | Cts Corp | Barium neodymium titanate dielectric ceramic composition incorporating samarium oxide for improved electrical performance |
| KR100444224B1 (en) * | 2001-11-13 | 2004-08-16 | 삼성전기주식회사 | Dielectric Ceramic Compositions |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0717444B2 (en) | 1995-03-01 |
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