JPH06239661A - Dielectric material porcelain composition for high-frequency wave and its production - Google Patents

Dielectric material porcelain composition for high-frequency wave and its production

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Publication number
JPH06239661A
JPH06239661A JP5026579A JP2657993A JPH06239661A JP H06239661 A JPH06239661 A JP H06239661A JP 5026579 A JP5026579 A JP 5026579A JP 2657993 A JP2657993 A JP 2657993A JP H06239661 A JPH06239661 A JP H06239661A
Authority
JP
Japan
Prior art keywords
composition
value
dielectric constant
high frequency
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5026579A
Other languages
Japanese (ja)
Inventor
Yoshio Tsukiyama
良男 築山
Yutaka Ariake
裕 有明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
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Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP5026579A priority Critical patent/JPH06239661A/en
Publication of JPH06239661A publication Critical patent/JPH06239661A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain a porcelain composition represented by a specific formula and improved in its dielectric constant by sintering a molded raw material in an oxygen-containing atmosphere. CONSTITUTION:BaCO3, Nd2O3, TiO2, Bi2O3, etc., as raw materials are. mixed with each other in a prescribed ratio in a wet state, dried, calcined at 1000-1200 deg.C, and further ground in a wet state. The produced slurry is dried, mixed with an organic binder, granulated, press-molded, and subsequently sintered in an oxygen-containing atmosphere to produce a dielectric material porcelain composition having a composition represented by E formula: xBaO.yNd2O3.zTiO2.vBi2O3 (0.130<x<0.160; 0.110<y<0.140; 0.600<z<0.650; 0.090<v<0.140; x+y+z+v=1), having a high dielectric constant, and useful for high frequency. The temperature dependency of the dielectric constant can be reduced by adding an Mn compound in an amount of 0<MnO2<=1.0g (in terms of the MnO2) to 100g of the composition.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は高周波用誘電体磁器組成
物に関し、より詳細には、主としていわゆるマイクロ波
帯域において使用されるレゾネータ、フィルタ、コンデ
ンサ、回路基板等を構成する高周波用誘電体磁器組成物
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency dielectric ceramic composition, and more particularly to a high frequency dielectric ceramic composition for a resonator, a filter, a capacitor, a circuit board or the like which is mainly used in a so-called microwave band. It relates to a composition.

【0002】[0002]

【従来の技術】近年、自動車電話、携帯電話、コードレ
ス電話などの無線通信機に使用される空中線共用器(デ
ュプレクサ)や電圧制御発振器等に使用される共振器、
あるいはCATV用チューナに使用されるフィルタ等に
高周波用誘電体磁器が多く用いられている。このような
共振器等においては、高誘電率材料を使用することによ
り高周波の波長を真空中の1/(εr)1/2 (εr:比
誘電率)の長さに短縮し、かかる周波数における1波
長、1/2波長、あるいは1/4波長のマイクロ波を高
周波誘電体磁器の中に閉じ込め、所定の作用効果が得ら
れるように小形に構成されたものが一般的に知られてい
る。
2. Description of the Related Art In recent years, antennas used in radio communication devices such as car phones, mobile phones, cordless phones, duplexers, and resonators used in voltage controlled oscillators, etc.
Alternatively, a high frequency dielectric ceramic is often used for a filter or the like used in a CATV tuner. In such a resonator or the like, by using a high dielectric constant material, the wavelength of the high frequency is shortened to 1 / (εr) 1/2 (εr: relative permittivity) in vacuum, and It is generally known that a microwave of 1 wavelength, 1/2 wavelength, or 1/4 wavelength is confined in a high-frequency dielectric porcelain and is constructed in a small size so as to obtain a predetermined function and effect.

【0003】このような高周波用誘電体磁器に要求され
る特性としては、(1)誘電体中では電磁波の波長が1
/(εr)1/2 (但し、εrは比誘電率)に短縮され、
同じ共振周波数ならば誘電率が大きい程小形化できるた
め、可能な限り比誘電率が大であること、(2)高周波
帯域での誘電損失が小さいこと、(3)共振周波数の温
度変化に対する変化率が少ないこと、すなわち比誘電率
(εr)の温度依存性が小さくかつ安定であること、の
3つの特性が挙げられる。
The characteristics required for such a high frequency dielectric ceramic are: (1) the electromagnetic wave has a wavelength of 1 in the dielectric.
/ (Εr) 1/2 (where εr is the relative permittivity)
Since the larger the permittivity is, the smaller the permittivity can be made at the same resonance frequency. Therefore, the relative permittivity is as large as possible. (2) The permittivity loss in the high frequency band is small. There are three characteristics: low permittivity, that is, temperature dependence of relative permittivity (εr) is small and stable.

【0004】また、マイクロ波帯域でも自動車電話、パ
ーソナル無線、コードレステレホン等に用いられる比較
的低周波帯域とされる1GHz 程度の領域において適用す
る場合、波長がかなり長くなるため、共振器等の小形化
を図るためには誘電体磁器組成物としては比誘電率がか
なり高いものが必要とされる。
In the microwave band, when it is applied in a region of about 1 GHz, which is a relatively low frequency band used for car telephones, personal radios, cordless telephones, etc., the wavelength becomes considerably long, so that a small size resonator or the like is used. In order to achieve this, it is necessary that the dielectric ceramic composition has a considerably high relative dielectric constant.

【0005】従来、この種の誘電体磁器組成物として
は、例えば、BaO-Nd2O3-TiO2-Bi2O3系組成物、BaO-Nd2O
3-TiO2-PbO-Bi2O3系組成物などが知られている。
Conventionally, as this type of dielectric ceramic composition, for example, BaO—Nd 2 O 3 —TiO 2 —Bi 2 O 3 system composition, BaO—Nd 2 O
3- TiO 2 -PbO-Bi 2 O 3 based compositions and the like are known.

【0006】例えば特開昭63-100058 号公報において
は、xBaO・yNd2O3・zTiO2・vBi2O3(式中、x、y、z、v
はそれぞれ、0.110 ≦x ≦0.170 、0.120 ≦y ≦0.185
、0.630 ≦z ≦0.710 、0.020 ≦v ≦0.090 の範囲に
あり、x+y+z+v=1の条件を満足する値)で表わ
される主成分に対し、Mnを0.003〜0.3重量%
の範囲で含有させたことを特徴とする誘電体磁器組成物
が提案されており、前記誘電体磁器組成物は、高い比誘
電率を有し、該誘電率の温度依存性、共振器における共
振周波数の温度依存性が小さく、高い無負荷Qを呈する
と記載されている。
For example, in Japanese Patent Laid-Open No. 63-100058, xBaO.yNd 2 O 3 .zTiO 2 .vBi 2 O 3 (where x, y, z, v
Are 0.110 ≤ x ≤ 0.170 and 0.120 ≤ y ≤ 0.185, respectively.
, 0.630 ≤ z ≤ 0.710, 0.020 ≤ v ≤ 0.090, and 0.003 to 0.3% by weight of Mn with respect to the main component represented by x + y + z + v = 1)
Has been proposed, the dielectric ceramic composition has a high relative dielectric constant, the temperature dependence of the dielectric constant, resonance in the resonator. It is described that the temperature dependence of the frequency is small and a high no-load Q is exhibited.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、前記特
開昭63-100058 号公報に記載されている高周波用誘電体
磁器組成物においては、その比誘電率がεr=70〜100
程度であり、それ以上の高い誘電率のものを得ようとす
ると、急激にQ値が劣化するか、あるいは温度特性が劣
化するという課題があった。従って、誘電率を上げて共
振器等の小形化を図るには限度があった。
However, in the high frequency dielectric porcelain composition described in JP-A-63-100058, the relative permittivity is εr = 70 to 100.
However, if an attempt is made to obtain a material having a higher dielectric constant, there is a problem that the Q value suddenly deteriorates or the temperature characteristic deteriorates. Therefore, there is a limit to increase the dielectric constant to reduce the size of the resonator and the like.

【0008】これは、前記公報に示されている組成物
は、v/x=0.117 〜0.818 、v/y=0.108 〜0.750
、v/z=0.028 〜0.142 であり、組成物中のBi2O3
の割合が小さいため、上記課題を有することとなってい
たもので、本発明者らは前記組成物中のBi2O3 の割合
を、v/x=0.562 〜1.07、v/y=0.642 〜1.27、v
/z=0.138 〜0.233 と大きくすることにより、比誘電
率(εr)が高く、誘電損失の特性値であるfQ値が大
きく、誘電率の温度依存性(τf)が小さく、温度変化
に対して安定であり、従って製造される誘電体共振器等
の共振周波数の温度依存性が小さく、かつより一層の小
形化が可能な高周波用誘電体磁器組成物が得られること
を見出し本発明を完成させたものである。
This is because the composition disclosed in the above publication has v / x = 0.117 to 0.818 and v / y = 0.108 to 0.750.
, V / z = 0.028 to 0.142, and Bi 2 O 3 in the composition is
Therefore, the inventors of the present invention have the above-mentioned problems because the ratio of Bi 2 O 3 in the composition is v / x = 0.562 to 1.07, and v / y = 0.642. 1.27, v
By increasing /z=0.138 to 0.233, the relative permittivity (εr) is high, the fQ value that is the characteristic value of the dielectric loss is large, the temperature dependence (τf) of the permittivity is small, and It has been found that a high frequency dielectric porcelain composition that is stable and therefore has a small temperature dependence of the resonance frequency of a manufactured dielectric resonator or the like and that can be further miniaturized is completed the present invention. It is a thing.

【0009】[0009]

【課題を解決するための手段】すなわち本発明に係る高
周波用誘電体磁器組成物は、xBaO・yNd2O3・zTiO2・vBi2O3
(式中、x、y、z、vはそれぞれ、0.130 < x < 0.16
0 、0.110 < y < 0.140 、0.600 < z < 0.650 、0.090
< v < 0.140 の範囲にあり、x+y+z+v=1の条件
を満足する値)で表わされる組成を有することを特徴と
している(1) 。また本発明に係る高周波用誘電体磁器組
成物は、xBaO・yNd2O3・zTiO2・vBi2O3(式中、x、y、
z、vはそれぞれ、0.130 < x < 0.160 、0.110 < y <
0.140 、0.600 < z < 0.650 、0.090 < v < 0.140 の範
囲にあり、x+y+z+v=1の条件を満足する値)を
主成分とし、前記主成分100gに対しMn化合物をMnO2
算で、0<MnO2≦1.0 g含有していることを特徴として
いる(2) 。
[Means for Solving the Problems] That is, the dielectric ceramic composition for high frequency according to the present invention is xBaO.yNd 2 O 3 zTiO 2 .vBi 2 O 3
(In the formula, x, y, z, and v are 0.130 <x <0.16, respectively.
0, 0.110 <y <0.140, 0.600 <z <0.650, 0.090
<v <0.140 and a composition represented by x + y + z + v = 1) (1). Further, the high frequency dielectric ceramic composition according to the present invention is xBaO · yNd 2 O 3 · zTiO 2 · vBi 2 O 3 (where x, y,
z and v are 0.130 <x <0.160 and 0.110 <y <, respectively.
0.140, 0.600 <z <0.650, 0.090 <v <0.140 and satisfying the condition of x + y + z + v = 1) as the main component, and the Mn compound is 0 <MnO 2 converted to MnO 2 with respect to 100 g of the main component. It is characterized by containing 2 ≤ 1.0 g (2).

【0010】さらに本発明に係る上記(1) 又は(2) 記載
の高周波用誘電体磁器組成物の製造方法は、酸素を含有
する雰囲気中で焼結させることを特徴としている(3) 。
Further, the method for producing a high frequency dielectric ceramic composition according to the above (1) or (2) of the present invention is characterized by sintering in an atmosphere containing oxygen (3).

【0011】前記高周波用誘電体磁器組成物の製造方法
において、酸素雰囲気中とは、空気中、あるいは空気よ
りも酸素を多く含んだ酸素含有ガス雰囲気中のことをい
う。
In the above-mentioned method for producing a dielectric ceramic composition for high frequencies, the term "in an oxygen atmosphere" means an air atmosphere or an oxygen-containing gas atmosphere containing a larger amount of oxygen than air.

【0012】[0012]

【作用】上記高周波用誘電体磁器組成物(1) において、
xの値は前記磁器組成物中のBaO の割合を示し、前記x
の値が0.130 以下であるとfQ値が小さく、共振周波数
の温度係数(τf)も大きくなり、またxの値が0.160
以上であると比誘電率(εr)が充分大きくならない。
[Function] In the high frequency dielectric ceramic composition (1),
The value of x indicates the proportion of BaO 3 in the porcelain composition,
If the value of is less than 0.130, the fQ value is small, the temperature coefficient (τf) of the resonance frequency is large, and the value of x is 0.160.
When it is above, the relative dielectric constant (εr) does not become sufficiently large.

【0013】yの値は前記磁器組成物中のNd2O3 の割合
を示し、前記yの値が0.110 以下であるとfQ値が小さ
く、共振周波数の温度係数(τf)も大きくなり、また
yの値が0.140 以上であると比誘電率(εr)が充分大
きくならない。
The value of y represents the proportion of Nd 2 O 3 in the porcelain composition. When the value of y is 0.110 or less, the fQ value becomes small and the temperature coefficient (τf) of the resonance frequency becomes large. When the value of y is 0.140 or more, the relative dielectric constant (εr) does not become sufficiently large.

【0014】zの値は前記磁器組成物中のTiO2の割合を
示し、前記zの値が0.600 以下であると比誘電率(ε
r)が充分大きくならず、また前記zの値が0.650 以上
であると比誘電率(εr)が充分大きくならず、共振周
波数の温度係数(τf)も大きくなる。
The value of z indicates the proportion of TiO 2 in the porcelain composition. If the value of z is 0.600 or less, the relative dielectric constant (ε
If r) is not sufficiently large and the value of z is 0.650 or more, the relative dielectric constant (εr) is not sufficiently large and the temperature coefficient (τf) of the resonance frequency is also large.

【0015】vの値は前記磁器組成物中のBi2O3 の割合
を示し、前記vの値が0.090 以下であると比誘電率(ε
r)が充分大きくならず、fQ値が小さくなり、また前
記vの値が0.140 以上であると共振周波数の温度係数
(τf)が大きくなってしまう。
The value of v indicates the proportion of Bi 2 O 3 in the porcelain composition, and when the value of v is 0.090 or less, the relative dielectric constant (ε
r) is not sufficiently large, the fQ value is small, and if the value of v is 0.140 or more, the temperature coefficient (τf) of the resonance frequency is large.

【0016】前記磁器組成物にMnO2を添加した高周波用
誘電体磁器組成物(2) においては、fQ値が数%〜十数
%増加して誘電損失特性が向上する他は、添加しない場
合とほぼ同様の傾向を示す。しかし、MnO2の添加量が
1.0重量%を超えると、緻密な焼結体を得るのが難しく
なり、また比誘電率(εr)が小さくなる傾向が生じ
る。
In the high frequency dielectric porcelain composition (2) in which MnO 2 is added to the porcelain composition, the fQ value is increased by several percent to tens of percent to improve the dielectric loss characteristics. Shows almost the same tendency as. However, the amount of MnO 2 added
If it exceeds 1.0% by weight, it becomes difficult to obtain a dense sintered body, and the relative dielectric constant (εr) tends to be small.

【0017】本発明に係る高周波用誘電体磁器組成物に
よれば、xBaO・yNd2O3・zTiO2・vBi2O3(式中、x、y、
z、vはそれぞれ、0.130 < x < 0.160 、0.110 < y <
0.140、0.600 < z < 0.650 、0.090 < v < 0.140 の範
囲にあり、x+y+z+v=1の条件を満足する値)で
表わされる組成を有し、比誘電率(εr)が高く、誘電
損失の特性値であるfQ値が大きく、誘電率の温度依存
性(τf)が小さく、温度変化に対して安定である。
According to the high frequency dielectric ceramic composition of the present invention, xBaO · yNd 2 O 3 · zTiO 2 · vBi 2 O 3 (where x, y,
z and v are 0.130 <x <0.160 and 0.110 <y <, respectively.
0.140, 0.600 <z <0.650, 0.090 <v <0.140, and a composition represented by x + y + z + v = 1), high relative permittivity (εr), and dielectric loss characteristic value Is large, the temperature dependence (τf) of the dielectric constant is small, and it is stable against temperature changes.

【0018】また本発明に係る高周波用誘電体磁器組成
物によれば、xBaO・yNd2O3・zTiO2・vBi2O3(式中、x、
y、z、vはそれぞれ、0.130 < x < 0.160 、0.110 <
y < 0.140 、0.600 < z < 0.650 、0.090 < v < 0.140
の範囲にあり、x+y+z+v=1の条件を満足する
値)を主成分とし、前記主成分100gに対しMn化合物を
MnO2換算で、0<MnO2≦1.0 g含有しており、上記(1)
の組成物の特性のうち、とくにfQ値がさらに増加する
ために誘電損失が小さくなる。
According to the high frequency dielectric ceramic composition of the present invention, xBaO · yNd 2 O 3 · zTiO 2 · vBi 2 O 3 (where x,
y, z and v are 0.130 <x <0.160 and 0.110 <, respectively.
y <0.140, 0.600 <z <0.650, 0.090 <v <0.140
Which satisfies the condition of x + y + z + v = 1) as the main component, and the Mn compound is added to 100 g of the main component.
In terms of MnO 2 , 0 <MnO 2 ≤ 1.0 g is contained, and the above (1)
Among the characteristics of the composition (1), the dielectric loss is reduced because the fQ value is further increased.

【0019】さらに、本発明に係る上記(1) 又は(2) 記
載の高周波用誘電体磁器組成物の製造方法によれば、酸
素を含有する雰囲気中で焼結させているので、上記(1)
又は(2) 記載の高周波用誘電体磁器組成物の特性のう
ち、特に比誘電率(εr)が大きくなる。
Further, according to the method for producing a high frequency dielectric ceramic composition according to the above (1) or (2) of the present invention, the sintering is performed in an atmosphere containing oxygen. )
Alternatively, among the characteristics of the high frequency dielectric ceramic composition described in (2), the relative dielectric constant (εr) is particularly large.

【0020】[0020]

【実施例】以下本発明に係る高周波用誘電体磁器組成物
の実施例及び比較例を説明する。
EXAMPLES Examples and comparative examples of the high frequency dielectric ceramic composition according to the present invention will be described below.

【0021】高純度のBaCO3 、Nd2O3 、TiO2、Bi2O3
MnO2を原料として用い、表1に示した組成になるよう秤
量し、ポットミルで湿式混合した。なお、原料は、これ
らに限られず、最終的に上記酸化物になるものであれば
他の化合物を使用することができる。例えば、MnO2に代
えてMnCO3 などを使用してもよい。
High-purity BaCO 3 , Nd 2 O 3 , TiO 2 , Bi 2 O 3 ,
MnO 2 was used as a raw material, weighed so as to have the composition shown in Table 1, and wet mixed in a pot mill. The raw materials are not limited to these, and other compounds can be used as long as they finally become the above oxide. For example, MnCO 3 or the like may be used instead of MnO 2 .

【0022】前記湿式混合した材料を乾燥させた後、10
00〜1200℃で1〜3時間仮焼し、この仮焼物をポットミ
ルで湿式粉砕した。
After drying the wet mixed material, 10
It was calcined at 00 to 1200 ° C. for 1 to 3 hours, and the calcined product was wet pulverized with a pot mill.

【0023】この湿式粉砕後のスラリーを乾燥させ、適
量の有機バインダ(PVA)を加えて造粒し、500 〜20
00kg/cm2の圧力で直径22mm、厚さ11mmの円柱状に成形
し、1220〜1360℃の温度範囲で約2時間焼成し、誘電体
磁器を得た。
The slurry after the wet pulverization is dried, an appropriate amount of an organic binder (PVA) is added and granulated, and then 500 to 20
It was shaped into a column having a diameter of 22 mm and a thickness of 11 mm at a pressure of 00 kg / cm 2 , and was fired at a temperature range of 1220 to 1360 ° C. for about 2 hours to obtain a dielectric ceramic.

【0024】次に、酸素の含有率が約80%である酸素雰
囲気中において焼成した他は、前記方法と同様の方法、
条件で仮焼、焼成等を行い、誘電体磁器を得た。
Next, the same method as the above-mentioned method except that firing is carried out in an oxygen atmosphere having an oxygen content of about 80%,
Calcination and firing were performed under the conditions to obtain a dielectric ceramic.

【0025】これらの方法により得られた誘電体磁器の
組成はICP発光分析により、調合組成通りであること
を確認した。
It was confirmed by ICP emission analysis that the composition of the dielectric ceramics obtained by these methods was the same as the composition.

【0026】前記誘電体磁器を直径16mm、 厚さ7.5mm に
研削、研磨し、共振周波数2〜3GHz において比誘電率
(εr)、Q値及び共振周波数の温度係数(τf)(-2
0 〜80℃)を、誘電体円柱共振器法により測定した。な
お、Q値は測定周波数により変化するので、その値がほ
ぼ一定値となるfQ値により表わした。その結果を下記
の表1及び表2に示す。
The dielectric porcelain was ground and polished to a diameter of 16 mm and a thickness of 7.5 mm, and the relative permittivity (εr), the Q value and the temperature coefficient (τf) of the resonance frequency (-2) at the resonance frequency of 2 to 3 GHz.
0 to 80 ° C) was measured by the dielectric cylinder resonator method. Since the Q value changes depending on the measurement frequency, it is represented by the fQ value, which is a substantially constant value. The results are shown in Tables 1 and 2 below.

【0027】[0027]

【表1】 [Table 1]

【0028】[0028]

【表2】 [Table 2]

【0029】表1及び表2において、試料No.1〜14は本
発明の範囲内の実施例に係るものであり、比誘電率(ε
r)が100 以上と従来のものに較べて大きく、 fQ値も
1500GHz以上と高く、かつ共振周波数の温度係数(τ
f)も±30 ppm/ ℃以下と低く安定している。なお試料
No.15 〜31は本発明の範囲外である比較例に係るもので
あり、比誘電率(εr)やfQ値、共振周波数の温度係
数(τf)のいずれか、又は前記2種以上の特性につい
て、要求される特性を満足していない。
In Tables 1 and 2, sample Nos. 1 to 14 are related to Examples within the scope of the present invention, and the relative dielectric constant (ε
r) is 100 or more, which is larger than the conventional one, and the fQ value is also
It is as high as 1500 GHz or more, and the temperature coefficient of resonance frequency (τ
f) is low and stable at less than ± 30 ppm / ° C. Sample
Nos. 15 to 31 relate to comparative examples outside the scope of the present invention, and any one of the relative permittivity (εr) and fQ value, the temperature coefficient (τf) of the resonance frequency, or the characteristics of two or more types described above. , Does not meet the required characteristics.

【0030】また酸素雰囲気中で焼成を行った実施例の
結果を示すNo.32 〜37では、80%の酸素雰囲気中で焼成
を行うことにより、空気中の焼成に比べて、全ての組成
範囲内において、fQ値、共振周波数の温度係数(τ
f)等を殆ど劣化させることなく、比誘電率(εr)が
3〜4向上する。
Further, in Nos. 32 to 37 showing the results of the examples in which the firing was carried out in an oxygen atmosphere, the firing was carried out in an oxygen atmosphere of 80%, so that all composition ranges were compared with the firing in air. Where fQ value and temperature coefficient of resonance frequency (τ
The relative permittivity (εr) is improved by 3 to 4 with almost no deterioration of f) and the like.

【0031】[0031]

【発明の効果】本発明に係る高周波用誘電体磁器組成物
(1) にあっては、xBaO・yNd2O3・zTiO2・vBi2O3(式中、
x、y、z、vはそれぞれ、0.130 < x < 0.160 、0.11
0 < y <0.140 、0.600 < z < 0.650 、0.090 < v < 0.1
40 の範囲にあり、x+y+z+v=1の条件を満足す
る値)で表わされる組成を有しており、比誘電率(ε
r)が100 以上と従来のものに較べて大きく、 fQ値も
1500 GHz以上と高く、かつ共振周波数の温度係数(τ
f)も±30 ppm/ ℃以下と小さく安定した特性を有して
いる。
The high frequency dielectric ceramic composition according to the present invention
In (1), xBaO ・ yNd 2 O 3・ zTiO 2・ vBi 2 O 3 (wherein
x, y, z and v are 0.130 <x <0.160 and 0.11 respectively.
0 <y <0.140, 0.600 <z <0.650, 0.090 <v <0.1
It has a composition within the range of 40 and is represented by a value satisfying the condition of x + y + z + v = 1), and has a relative dielectric constant (ε
r) is 100 or more, which is larger than the conventional one, and the fQ value is also
High as 1500 GHz or more and temperature coefficient of resonance frequency (τ
f) also has small and stable characteristics of less than ± 30 ppm / ° C.

【0032】本発明に係る高周波用誘電体磁器組成物
(2) にあっては、xBaO・yNd2O3・zTiO2・vBi2O3(式中、
x、y、z、vはそれぞれ、0.130 < x < 0.160 、0.11
0 < y <0.140 、0.600 < z < 0.650 、0.090 < v < 0.1
40 の範囲にあり、x+y+z+v=1の条件を満足す
る値)を主成分とし、前記主成分100gに対しMn化合物
をMnO2換算で、0<MnO2≦1.0 g含有しており、比誘電
率(εr)、fQ値、共振周波数の温度係数(τf)の
いずれも上記(1) の高周波用誘電体磁器組成物以上の特
性を有し、特にfQ値が大きくなり、誘電損失が小さく
なる。
High frequency dielectric ceramic composition according to the present invention
In (2), xBaO ・ yNd 2 O 3・ zTiO 2・ vBi 2 O 3 (wherein
x, y, z and v are 0.130 <x <0.160 and 0.11 respectively.
0 <y <0.140, 0.600 <z <0.650, 0.090 <v <0.1
The value of which satisfies the condition of x + y + z + v = 1) in the range of 40) and contains 0 <MnO 2 ≦ 1.0 g of Mn compound in terms of MnO 2 with respect to 100 g of the main component, and the relative permittivity All of (εr), fQ value, and temperature coefficient (τf) of resonance frequency have the characteristics higher than those of the high frequency dielectric ceramic composition of (1) above, and in particular, the fQ value becomes large and the dielectric loss becomes small.

【0033】従って、本発明の高周波用誘電体磁器組成
物をマイクロ波帯域で使用するレゾネータ、フィルタ、
コンデンサ、回路基板等に使用した場合、一層の小型化
が可能となり、温度変化に対して安定した部品を提供す
ることができる。
Therefore, a resonator, a filter, or the like, which uses the high frequency dielectric ceramic composition of the present invention in the microwave band,
When it is used for a capacitor, a circuit board, etc., further miniaturization is possible, and it is possible to provide a stable component against temperature changes.

【0034】また、本発明に係る上記(1) 又は(2) 記載
の高周波用誘電体磁器組成物の製造方法にあっては、酸
素を含有する雰囲気中で焼結させることにより、より一
層の高誘電率化が図れる。
Further, in the method for producing a high frequency dielectric ceramic composition according to the above (1) or (2) according to the present invention, further sintering is performed in an atmosphere containing oxygen. High dielectric constant can be achieved.

【0035】[0035]

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 xBaO・yNd2O3・zTiO2・vBi2O3(式中、x、
y、z、vはそれぞれ、0.130 < x < 0.160 、0.110 <
y < 0.140 、0.600 < z < 0.650 、0.090 <v < 0.140
の範囲にあり、x+y+z+v=1の条件を満足する
値)で表わされる組成を有することを特徴とする高周波
用誘電体磁器組成物。
1. xBaO.yNd 2 O 3 .zTiO 2 .vBi 2 O 3 (where x,
y, z and v are 0.130 <x <0.160 and 0.110 <, respectively.
y <0.140, 0.600 <z <0.650, 0.090 <v <0.140
And a composition represented by a value satisfying the condition of x + y + z + v = 1).
【請求項2】 xBaO・yNd2O3・zTiO2・vBi2O3(式中、x、
y、z、vはそれぞれ、0.130 < x < 0.160 、0.110 <
y < 0.140 、0.600 < z < 0.650 、0.090 <v < 0.140
の範囲にあり、x+y+z+v=1の条件を満足する
値)を主成分とし、前記主成分100gに対しMn化合物を
MnO2換算で、0<MnO2≦1.0 g含有していることを特徴
とする高周波用誘電体磁器組成物。
2. xBaO · yNd 2 O 3 · zTiO 2 · vBi 2 O 3 (where x,
y, z and v are 0.130 <x <0.160 and 0.110 <, respectively.
y <0.140, 0.600 <z <0.650, 0.090 <v <0.140
Which satisfies the condition of x + y + z + v = 1) as the main component, and the Mn compound is added to 100 g of the main component.
A high frequency dielectric ceramic composition containing 0 <MnO 2 ≦ 1.0 g in terms of MnO 2 .
【請求項3】 酸素を含有する雰囲気中で焼結させるこ
とを特徴とする請求項1又は請求項2記載の高周波用誘
電体磁器組成物の製造方法。
3. The method for producing a high frequency dielectric ceramic composition according to claim 1, wherein the sintering is performed in an atmosphere containing oxygen.
JP5026579A 1993-02-16 1993-02-16 Dielectric material porcelain composition for high-frequency wave and its production Pending JPH06239661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5026579A JPH06239661A (en) 1993-02-16 1993-02-16 Dielectric material porcelain composition for high-frequency wave and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5026579A JPH06239661A (en) 1993-02-16 1993-02-16 Dielectric material porcelain composition for high-frequency wave and its production

Publications (1)

Publication Number Publication Date
JPH06239661A true JPH06239661A (en) 1994-08-30

Family

ID=12197469

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH06239661A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004284941A (en) * 2003-03-04 2004-10-14 Ngk Insulators Ltd Dielectric composition for low temperature firing, and electronic component
US6850751B1 (en) 1999-03-09 2005-02-01 Matsushita Electric Industrial Co., Ltd. Non-reciprocal circuit device, method of manufacturing, and mobile communication apparatus using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6850751B1 (en) 1999-03-09 2005-02-01 Matsushita Electric Industrial Co., Ltd. Non-reciprocal circuit device, method of manufacturing, and mobile communication apparatus using the same
JP2004284941A (en) * 2003-03-04 2004-10-14 Ngk Insulators Ltd Dielectric composition for low temperature firing, and electronic component

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