JP3575336B2 - High frequency dielectric ceramic composition, dielectric resonator, dielectric filter, dielectric duplexer, and communication device - Google Patents

Description

【００３１】
【表２】

なお、表２に示した試料４１〜５６は、表１の組成式中のＬａの代わりに、表２の「希土類元素」の欄に示した種々の希土類元素としたもので、試料４１〜５２については、表１中の試料１６に対応する組成を有しており、試料５３〜５６については、表１中の試料３５に対応する組成を有している。
【００３２】
次に、これら調合済み原料の粉末を、ボールミルを用いて１６時間湿式混合した後、脱水、乾燥し、その後、１１００〜１３００℃で３時間仮焼し、この仮焼粉末に適量のバインダを加えて、再度、ボールミルを用いて１６時間湿式粉砕することにより、調製粉末を得た。
【００３３】
次に、この調製粉末を１０００〜２０００ｋｇ／ｃｍ^２の圧力で円板状にプレス成形した後、１３５０〜１４００℃の温度で４時間大気中で焼成し、直径１０ｍｍ、厚み５ｍｍのペロブスカイト型結晶相を主結晶とする磁器を得た。
【００３４】
得られた磁器について、測定周波数６〜８ＧＨｚにおける比誘電率（ε_ｒ）およびＱ値を両端短絡型誘電体共振器法で測定し、Ｑ×ｆ＝一定則に従って、１ＧＨｚのＱ値に換算した。また、ＴＥ０１δモード共振器周波数から、共振周波数の２５℃〜５５℃間の温度係数（τｆ）を測定した。これらの結果を、表１および表２に示す。なお、表１において、試料番号に＊を付したものは、本発明の範囲外のものである。
【００３５】
表１および表２から明らかなように、本発明の範囲内にある試料によれば、マイクロ波帯において比誘電率（ε_ｒ）を大きな値に保ちながら高いＱ値を得ることができる。
【００３６】
ここで、表１を主として参照しながら、本発明の組成式：ｘＭＴｉ_ａＯ_１＋２ａ―ｙＬｎ（Ｍｇ_２／３Ｔａ_１／３）_ｂＯ_{（３＋３ｂ）／２}−ｚＬｍ（Ｍｇ_２／３Ｓｂ_１／３）_ｃＯ_{（３＋３ｃ）／２}（ただし、Ｌｎ、Ｌｍは希土類元素、ＭはＣａおよびＳｒのうちの少なくとも１種）で表わされる組成物の限定理由を以下に説明する。
【００３７】
まず、ａについて、０．９５０≦ａ≦１．０５０と限定したのは、ａ＜０．９５０の場合には、試料１１および３０のように、また、ａ＞１．０５０の場合には、試料２１および４０のように、ともにＱ値が低くなり本発明の目的を達成することができないからである。
【００３８】
ｂについて、０．９００≦ｂ≦１．０５０と限定したのは、ｂ＜０．９００の場合には、試料１３および３２のように、また、ｂ＞１．０５０の場合には、試料１９および３８のように、ともにＱ値が低くなるためである。
【００３９】
ｃについて、０．９００≦ｃ≦１．０５０と限定したのは、ｃ＜０．９００の場合には、試料１５および３４のように、また、ｃ＞１．０５０の場合には、試料１７および３６のように、ともにＱ値が低くなるためである。
【００４０】
ｘ、ｙ、ｚについて、添付図１に示す三元組成図において、点Ａ、Ｂ、Ｃ、Ｄを結ぶ多角形の線上または内部（但し、線ＣＤ上は除く）としたのは、以下の理由による。
【００４１】
すなわち、線ＡＤの外側の場合には、試料１および２のように、共振周波数の温度係数（τｆ）が＋５０ｐｐｍ／℃よりも大きくなってしまうためであり、線ＢＣの外側の場合には、試料２８および２９のように、共振周波数の温度係数（τｆ）が−５０ｐｐｍ／℃よりもマイナス側にずれてしまうからである。また、線ＣＤ上を除いたのは、試料５、２２および２７から明らかなように、ｚ＝０では、１３５０〜１４００℃の焼成温度では十分に焼結せず、１４００℃を超える高温での焼成が必要となり、工業的に大量生産するうえで不都合が多いためである。
【００４２】
表１の試料１６と表２の試料４１〜５２の比較、および、表１の試料３５と表２の試料５３〜５６の比較から明らかなように、希土類元素としてはＬａを用いるのが最も好ましく、Ｌａを用いることにより、高い比誘電率（ε_ｒ）と高いＱ値を得ることができる。また、試料４１、４４、４７、５０間の比較で明らかなように、希土類元素としてＮｄまたはＳｍを用いることにより、ＹまたはＰｒの場合と比較して、より高いＱ値を得ることができる。
【００４３】
なお、本発明の高周波用誘電体磁器組成物には、本発明の目的を損なわない範囲内で微量の添加物を加えることができる。たとえば、ＳｉＯ_２、ＭｎＣＯ_３、Ｂ_２Ｏ_３、ＺｎＯ、ＮｉＯ、ＣｕＯ、Ｌｉ_２ＣＯ_３などを０．０１〜１．０ｗｔ％添加することにより、特性の劣化を抑えながら、焼成温度を１０〜２０℃低下させることができる。その他にも、Ｎｂ_２Ｏ_５、Ｖ_２Ｏ_５、ＷＯ_３などを１〜３ｗｔ％添加することで、比誘電率（ε_ｒ）と温度特性の微調整が可能となり、優れた誘電体磁器を得ることができる。
【００４４】
【発明の効果】
以上の説明で明らかなように、本発明によれば、比誘電率（ε_ｒ）が３７〜５４と大きく、Ｑ値が２００００（１ＧＨｚにおいて）以上と大きく、しかも、共振周波数の温度係数（τｆ）を０（ｐｐｍ／℃）を中心に任意に制御できる、高周波用誘電体磁器組成物を得ることができる。
【００４５】
したがって、このような組成を有する誘電体磁器を用いて、誘電体共振器、誘電体フィルタ、誘電体デュプレクサ、および通信機装置を作製することにより、それぞれ良好な特性を得ることができる。
【図面の簡単な説明】
【図１】ＭＴｉＯ_３―Ｌｎ（Ｍｇ_２／３Ｔａ_１／３）Ｏ_３−Ｌｍ（Ｍｇ_２／３Ｓｂ_１／３）Ｏ_３系組成物の三元組成図である。
【図２】本発明の一実施形態による誘電体共振器を図解的に示す断面図である。
【図３】本発明の通信機装置一例を示すブロック図である。
【符号の説明】
１ 誘電体共振器
２ 金属ケース
４ 誘電体磁器
５ 入力端子
６ 出力端子
１０ 通信機装置
１２ 誘電体デュプレクサ
１４ 送信用回路
１６ 受信用回路
１８ アンテナ
２０ 入力接続手段
２２ 出力接続手段
２４ アンテナ接続手段
２６、２８ 誘電体フィルタ
３０ 外部結合手段[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a dielectric ceramic composition for high frequency, and a dielectric resonator, a dielectric filter, a dielectric duplexer and a communication device using the same.
[0002]
[Prior art]
For example, as a dielectric resonator, a dielectric filter, or a circuit board material mounted on an electronic device used in a high frequency region such as a microwave and a millimeter wave, such as a mobile phone, a personal wireless device, and a satellite broadcast receiver. In addition, dielectric porcelain is widely used.
[0003]
The dielectric properties required for such a high-frequency dielectric porcelain are as follows: (1) Since the wavelength of an electromagnetic wave is reduced to 1 / (ε _r ) ^1/2 in a dielectric, it is necessary to meet the demand for miniaturization. The relative dielectric constant (ε _r ) is large, (2) the dielectric loss is small, that is, the Q value is high, and (3) the temperature stability of the resonance frequency is excellent, that is, the temperature coefficient (τf) of the resonance frequency is high. 0 (ppm / ° C.).
[0004]
Conventionally, as the dielectric ceramic composition of this kind, for _{example, Ba (Zn, Ta) O} 3 system (JP-B 58-25068 discloses), Ba (Sn, Mg, Ta) O 3 based (KOKOKU 3- No. 34164), dielectric ceramic compositions such as (Zr, Sn) TiO ₄ system (Japanese Patent Publication No. 4-59267) and Ba ₂ Ti ₉ O ₂₀ (Japanese Patent Application Laid-Open No. 61-10806) are known. I have.
[0005]
[Problems to be solved by the invention]
However, the Ba (Zn, Ta) O ₃ -based or Ba (Sn, Mg, Ta) O ₃ -based material has a very large Q value of 150,000 to 300,000 (at 1 GHz), but has a relative dielectric constant (ε _r ). Is relatively small as 24 to 30.
[0006]
On the other hand, (Zr, Sn) TiO ₄ -based and Ba ₂ Ti ₉ O ₂₀ -based materials have relatively large relative dielectric constants (ε _r ) of 37 to 40 and high Q values of 50,000 to 60000 (at 1 GHz). Although a value is shown, it is difficult to realize a larger relative permittivity (ε _r ), for example, exceeding 40.
[0007]
In recent years, there has been an increasing demand for low loss and miniaturization of electronic devices. With this, with respect to dielectric materials, materials having more excellent dielectric properties, particularly, a material having both a high relative dielectric constant (ε _r ) and a high Q value, have been developed. Although the demands for the development of such a device have been increasing, it has not been possible to sufficiently meet such demands.
[0008]
Therefore, an object of the present invention is to provide a dielectric material having a relatively large relative dielectric constant (ε _r ) of 37 to 54, a large Q value of 20,000 (at 1 GHz) or more, and a temperature coefficient (τf) of resonance frequency of 0 (ppm). / ° C.) can be arbitrarily controlled with a focus on high-frequency dielectric ceramic compositions. Another object of the present invention is to provide a dielectric resonator, a dielectric filter, a dielectric duplexer, and a communication device using the same.
[0009]
[Means for Solving the Problems]
In order to achieve the above object, the high frequency dielectric ceramic composition of the present invention comprises a rare earth element (Ln, Lm), Mg, Ta, Sb, Ti and M (M: at least one of Ca and Sr). Including
_{Formula: xMTi a O 1 + 2a -yLn} (Mg 2/3 Ta 1/3) b O (3 + 3b) / 2 -zLm (Mg 2/3 Sb 1/3) c O (3 + 3c) / 2 ( provided that, x, y and z have a composition represented by mol%),
a, b, c are in the range of 0.950 ≦ a ≦ 1.050, 0.900 ≦ b ≦ 1.050, 0.900 ≦ c ≦ 1.050,
x, y, and z are points A (x = 75, y = 0, z = 25), point B (x = 55, y = 0, z = 45), and points in the ternary composition diagram shown in FIG. C (x = 55, y = 45, z = 0), on or inside a polygonal line connecting points D (x = 75, y = 25, z = 0) (except on the line CD),
A perovskite-type crystal phase is used as a main crystal.
[0010]
The rare earth element (Ln, Lm) is at least one of Y, La, Pr, Nd and Sm.
[0011]
Further, the M is Ca.
[0012]
Preferably, the rare earth element (Ln, Lm) is at least one of La, Nd, and Sm.
Further, the rare earth element (Ln, Lm) is more preferably La.
[0013]
Further, the dielectric resonator of the present invention operates by the dielectric ceramic being electromagnetically coupled to the input / output terminal. In the dielectric resonator, the dielectric ceramic is made of the above-described dielectric ceramic composition for high frequency. It is characterized by the following.
[0014]
Further, a dielectric filter according to the present invention is characterized in that the above-described dielectric resonator includes external coupling means.
[0015]
Further, the dielectric duplexer of the present invention includes at least two dielectric filters, input / output connection means connected to each of the dielectric filters, and antenna connection means commonly connected to the dielectric filters. Wherein at least one of the dielectric filters is the above-described dielectric filter.
[0016]
Further, the communication apparatus of the present invention is characterized in that the above-described dielectric duplexer, a transmission circuit connected to at least one input / output connection means of the dielectric duplexer, and the input / output connection connected to the transmission circuit And a receiving circuit connected to at least one input / output connection means different from the means, and an antenna connected to an antenna connection means of the dielectric duplexer.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 2 is a sectional view schematically showing a basic structure of the dielectric resonator 1 according to one embodiment of the present invention.
[0018]
Referring to FIG. 2, dielectric resonator 1 includes metal case 2, and columnar dielectric porcelain 4 supported by support 3 is arranged in a space inside metal case 2. The input terminal 5 and the output terminal 6 are held by the metal case 2 in a state where the input terminal 5 and the output terminal 6 are insulated from the metal case 2. The dielectric porcelain 4 operates by being electromagnetically coupled to the input terminal 5 and the output terminal 6, and outputs only a signal of a predetermined frequency input from the input terminal 5 from the output terminal 6. The dielectric porcelain 4 in such a dielectric resonator 1 is composed of the high frequency dielectric porcelain composition according to the present invention.
[0019]
FIG. 2 shows a TE01δ mode dielectric resonator, but the high frequency dielectric ceramic composition of the present invention is similarly used for other TE mode, TM mode, and TEM mode dielectric resonators. be able to.
[0020]
FIG. 3 is a block diagram showing an example of the communication device of the present invention. The communication device 10 includes a dielectric duplexer 12, a transmission circuit 14, a reception circuit 16, and an antenna 18. The transmission circuit 14 is connected to the input connection means 20 of the dielectric duplexer 12, and the reception circuit 16 is connected to the output connection means 22 of the dielectric duplexer 12. Further, the antenna 18 is connected to the antenna connecting means 24 of the dielectric duplexer 12. The dielectric duplexer 12 includes two dielectric filters 26 and 28. The dielectric filters 26 and 28 are obtained by connecting external coupling means to the dielectric resonator of the present invention. In this embodiment, for example, it is formed by connecting the external coupling means 30 to the input / output terminals of the dielectric resonator 1, respectively. One dielectric filter 26 is connected between the input connection means 20 and the other dielectric filter 28, and the other dielectric filter 28 is connected between the one dielectric filter 26 and the output connection means 22. Connected.
[0021]
As described above, the dielectric ceramic composition for high frequencies according to the present invention contains rare earth elements (Ln, Lm), Mg, Ta, Sb, Ti, and M (M: at least one of Ca and Sr). , composition _{formula: xMTi a O 1 + 2a -yLn} (Mg 2/3 Ta 1/3) b O (3 + 3b) / 2 -zLm (Mg 2/3 Sb 1/3) c O (3 + 3c) / 2 ( here, x , Y, and z are mol%), and each of a, b, c, x, y, and z is within the following range.
[0022]
First, a is within the range of 0.950 ≦ a ≦ 1.050. This is because when a <0.950 or a> 1.050, the Q value becomes low and the object of the present invention cannot be achieved.
[0023]
b is in the range of 0.900 ≦ b ≦ 1.050. When b <0.900 or b> 1.050, the Q value becomes low.
[0024]
c is in the range of 0.900 ≦ c ≦ 1.050. When c <0.900 or c> 1.050, the Q value becomes low.
[0025]
x, y, and z are on or inside the polygonal line connecting points A, B, C, and D (except on the line CD) in the ternary composition diagram shown in FIG. This is because the temperature coefficient (τf) of the resonance frequency becomes larger than +50 ppm / ° C. in the case outside the line AD, and the temperature coefficient (τf) in the resonance frequency becomes −− outside the line BC. This is because the temperature is shifted to the minus side from 50 ppm / ° C. In addition, except for the line CD, when z = 0, sintering was not sufficiently performed at a firing temperature of 1350 to 1400 ° C., and firing at a high temperature exceeding 1400 ° C. was required. This is because there are many disadvantages.
[0026]
In the high frequency dielectric ceramic composition according to the present invention, it is preferable to use Y, La, Pr, Nd, Sm, etc. as the rare earth elements (Ln, Lm). , Sm, and more preferably La. By using Nd and Sm, the Q value can be improved, and by using La, the relative dielectric constant (ε _r ) and the Q value can be further increased.
[0027]
【Example】
Next, the present invention will be described based on more specific examples.
[0028]
(Example 1)
As starting materials, high-purity calcium carbonate (CaCO ₃ ), strontium carbonate (SrCO ₃ ), titanium oxide (TiO ₂ ), rare earth oxides (La ₂ O ₃ etc.), magnesium oxide (MgO), tantalum oxide (Ta ₂₎ O ₅ ) and antimony oxide (Sb ₂ O ₃ ) were prepared.
[0029]
Next, the composition formula shown in Table _{1: xMTi a O 1 + 2a} -yLa (Mg 2/3 Ta 1/3) b O (3 + 3b) / 2 -zLa (Mg 2/3 Sb 1/3) c O (3 + 3c) _{/ 2} (where x, y, and z are mol%), these raw materials were blended. Further, the composition formula shown in Table _{2: xMTi a O 1 + 2a} -yLn (Mg 2/3 Ta 1/3) b O (3 + 3b) / 2 -zLm (Mg 2/3 Sb 1/3) c O (3 + 3c) / These raw materials were blended so that a composition represented by a composition represented by ₂ (where x, y, and z were mol%) was obtained.
[0030]
[Table 1]

[0031]
[Table 2]

The samples 41 to 56 shown in Table 2 were various kinds of rare earth elements shown in the column of “rare earth elements” in Table 2 instead of La in the composition formula of Table 1. Has a composition corresponding to Sample 16 in Table 1, and Samples 53 to 56 have a composition corresponding to Sample 35 in Table 1.
[0032]
Next, the powders of the prepared raw materials are wet-mixed using a ball mill for 16 hours, dehydrated and dried, and then calcined at 1100 to 1300 ° C. for 3 hours, and an appropriate amount of a binder is added to the calcined powder. Then, the powder was again wet-ground using a ball mill for 16 hours to obtain a prepared powder.
[0033]
Next, the prepared powder is press-molded into a disc at a pressure of 1000 to 2000 kg / cm ² , and then calcined in the atmosphere at a temperature of 1350 to 1400 ° C. for 4 hours to obtain a perovskite crystal phase having a diameter of 10 mm and a thickness of 5 mm. Was obtained as a main crystal.
[0034]
With respect to the obtained porcelain, the relative dielectric constant (ε _r ) and the Q value at a measurement frequency of 6 to 8 GHz were measured by a double-ended short-circuit type dielectric resonator method, and were converted to a Q value of 1 GHz according to Q × f = constant rule. . Further, a temperature coefficient (τf) between 25 ° C. and 55 ° C. of the resonance frequency was measured from the TE01δ mode resonator frequency. The results are shown in Tables 1 and 2. In Table 1, those with * added to the sample numbers are out of the scope of the present invention.
[0035]
As is clear from Tables 1 and 2, according to the sample within the range of the present invention, a high Q value can be obtained in the microwave band while keeping the relative dielectric constant (ε _r ) at a large value.
[0036]
Here, referring to Table 1 mainly composition formula of the _{invention: xMTi a O 1 + 2a -yLn} (Mg 2/3 Ta 1/3) b O (3 + 3b) / 2 -zLm (Mg 2/3 Sb 1 / _{3) c O (3 + 3c} ) / 2 ( provided that, Ln, Lm is a rare earth element, M is describing the reasons for limiting the composition represented by at least one) of Ca and Sr below.
[0037]
First, a was limited to 0.950 ≦ a ≦ 1.050 as in samples 11 and 30 when a <0.950, and when a> 1.050, This is because the Q value of each of the samples 21 and 40 is low and the object of the present invention cannot be achieved.
[0038]
The reason for limiting b to 0.900 ≦ b ≦ 1.050 is as follows: samples 13 and 32 when b <0.900, and samples 19 and 32 when b> 1.050. This is because the Q value becomes low as in the cases of and.
[0039]
For c, 0.900 ≦ c ≦ 1.050 is limited as in samples 15 and 34 when c <0.900, and in sample 17 when c> 1.050. This is because the Q value is low as in the cases of and 36.
[0040]
Regarding x, y and z, in the ternary composition diagram shown in the attached FIG. 1, the points on the polygonal line connecting points A, B, C and D or inside (but not on the line CD) are as follows: It depends on the reason.
[0041]
That is, the temperature coefficient (τf) of the resonance frequency becomes larger than +50 ppm / ° C. as in the case of samples 1 and 2 outside the line AD. This is because the temperature coefficient (τf) of the resonance frequency shifts to the minus side from −50 ppm / ° C. as in the samples 28 and 29. As is clear from Samples 5, 22, and 27, except for the line CD, at z = 0, sintering was not sufficiently performed at a firing temperature of 1350 to 1400 ° C., and at a high temperature exceeding 1400 ° C. This is because firing is required, and there are many inconveniences in industrial mass production.
[0042]
As is clear from the comparison between Sample 16 in Table 1 and Samples 41 to 52 in Table 2 and Comparison between Sample 35 in Table 1 and Samples 53 to 56 in Table 2, it is most preferable to use La as the rare earth element. , La, a high relative dielectric constant (ε _r ) and a high Q value can be obtained. As is clear from the comparison between the samples 41, 44, 47, and 50, a higher Q value can be obtained by using Nd or Sm as the rare earth element than in the case of Y or Pr.
[0043]
It should be noted that a small amount of additives can be added to the high frequency dielectric ceramic composition of the present invention as long as the object of the present invention is not impaired. For example, by adding 0.01 to 1.0 wt% of SiO ₂ , MnCO ₃ , B ₂ O ₃ , ZnO, NiO, CuO, Li ₂ CO _3, etc., the firing temperature can be reduced to 10 to 10 while suppressing the deterioration of the characteristics. Can be lowered by 20 ° C. In addition, by adding Nb ₂ O ₅ , V ₂ O ₅ , WO _{3 and the} like in an amount of 1 to ₃ wt%, the relative dielectric constant (ε _r ) and the temperature characteristics can be finely adjusted, and an excellent dielectric ceramic can be obtained. Obtainable.
[0044]
【The invention's effect】
As is apparent from the above description, according to the present invention, the relative dielectric constant (ε _r ) is as large as 37 to 54, the Q value is as large as 20,000 (at 1 GHz) or more, and the temperature coefficient of resonance frequency (τf ) Can be arbitrarily controlled centering on 0 (ppm / ° C.) to obtain a dielectric ceramic composition for high frequencies.
[0045]
Therefore, by using a dielectric ceramic having such a composition to manufacture a dielectric resonator, a dielectric filter, a dielectric duplexer, and a communication device, favorable characteristics can be obtained.
[Brief description of the drawings]
FIG. 1 is a ternary composition diagram of an MTiO ₃ -Ln (Mg _2/3 Ta _1/3 ) O ₃ -Lm (Mg _2/3 Sb _1/3 ) O ₃ composition.
FIG. 2 is a cross-sectional view schematically illustrating a dielectric resonator according to an embodiment of the present invention.
FIG. 3 is a block diagram showing an example of a communication device of the present invention.
[Explanation of symbols]
REFERENCE SIGNS LIST 1 dielectric resonator 2 metal case 4 dielectric ceramic 5 input terminal 6 output terminal 10 communication device 12 dielectric duplexer 14 transmission circuit 16 reception circuit 18 antenna 20 input connection means 22 output connection means 24 antenna connection means 26, 28 Dielectric filter 30 External coupling means

Claims (9)

A rare earth element (Ln, Lm), Mg, Ta, Sb, Ti and M (M: at least one of Ca and Sr);
_{Formula: xMTi a O 1 + 2a -yLn} (Mg 2/3 Ta 1/3) b O (3 + 3b) / 2 -zLm (Mg 2/3 Sb 1/3) c O (3 + 3c) / 2 ( provided that, x, y and z have a composition represented by mol%),
a, b, c are
0.950 ≦ a ≦ 1.050
0.900 ≦ b ≦ 1.050
0.900 ≦ c ≦ 1.050
Within the range of
In the ternary composition diagram shown in FIG.
Point A (x = 75, y = 0, z = 25)
Point B (x = 55, y = 0, z = 45)
Point C (x = 55, y = 45, z = 0)
Point D (x = 75, y = 25, z = 0)
On or inside the polygonal line connecting (except on the line CD)
A dielectric ceramic composition for high frequencies, comprising a perovskite-type crystal phase as a main crystal. The dielectric ceramic composition for a high frequency wave according to claim 1, wherein the rare earth element (Ln, Lm) is at least one of Y, La, Pr, Nd, and Sm. The high frequency dielectric ceramic composition according to claim 2, wherein the M is Ca. The high frequency dielectric ceramic composition according to claim 3, wherein the rare earth element (Ln, Lm) is at least one of La, Nd, and Sm. The dielectric ceramic composition for high frequencies according to claim 3, wherein the rare earth element (Ln, Lm) is La. A dielectric resonator in which a dielectric ceramic is operated by being electromagnetically coupled to an input / output terminal, wherein the dielectric ceramic is made of the high frequency dielectric ceramic composition according to any one of claims 1 to 5. Characterized by a dielectric resonator. A dielectric filter comprising the dielectric resonator according to claim 6 and external coupling means. A dielectric duplexer including at least two dielectric filters, input / output connection means connected to each of the dielectric filters, and antenna connection means commonly connected to the dielectric filters, A dielectric duplexer, wherein at least one of the dielectric filters is the dielectric filter according to claim 7. 9. The dielectric duplexer according to claim 8, a transmission circuit connected to at least one input / output connection means of the dielectric duplexer, and at least one different from the input / output connection means connected to the transmission circuit. A communication device, comprising: a receiving circuit connected to the input / output connection means; and an antenna connected to the antenna connection means of the dielectric duplexer.

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