JP4830286B2 - High frequency dielectric ceramic composition, dielectric resonator, dielectric filter, dielectric duplexer, and communication device - Google Patents

High frequency dielectric ceramic composition, dielectric resonator, dielectric filter, dielectric duplexer, and communication device Download PDF

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JP4830286B2
JP4830286B2 JP2004329617A JP2004329617A JP4830286B2 JP 4830286 B2 JP4830286 B2 JP 4830286B2 JP 2004329617 A JP2004329617 A JP 2004329617A JP 2004329617 A JP2004329617 A JP 2004329617A JP 4830286 B2 JP4830286 B2 JP 4830286B2
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石川　　達也
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Description

本願発明は、マイクロ波やミリ波などの高周波領域において利用される高周波用誘電体磁器組成物、ならびにそれを用いて構成される誘電体共振器、誘電体フィルタ、誘電体デュプレクサ、および通信機装置に関する。   The present invention relates to a high-frequency dielectric ceramic composition used in a high-frequency region such as a microwave or a millimeter wave, and a dielectric resonator, a dielectric filter, a dielectric duplexer, and a communication device configured using the same About.

マイクロ波やミリ波などの高周波領域において、誘電体共振器や回路基板などを構成する材料として、誘電体磁器が広く利用されている。
このような高周波用誘電体磁器を、特に誘電体共振器や誘電体フィルタなどに用いる場合、以下のような誘電特性を備えていることが要求される。
(１)誘電体中では電磁波の波長が１／（εr）1/2に短縮されることから、小型化への対応性向上の見地より、比誘電率（εr）が高いこと。
(２)誘電損失が小さいこと（すなわちＱ値が高いこと）。
(３)共振周波数の温度安定性が優れていること、すなわち共振周波数の温度係数（τf）が０ｐｐｍ／℃付近であること。 In high frequency regions such as microwaves and millimeter waves, dielectric ceramics are widely used as materials constituting dielectric resonators and circuit boards.
When such a high-frequency dielectric ceramic is used for a dielectric resonator, a dielectric filter or the like, it is required to have the following dielectric characteristics.
(1) Since the wavelength of the electromagnetic wave is shortened to 1 / (ε r ) 1/2 in the dielectric, the dielectric constant (ε r ) is high from the viewpoint of improving the compatibility with downsizing.
(2) The dielectric loss is small (that is, the Q value is high).
(3) The temperature stability of the resonance frequency is excellent, that is, the temperature coefficient (τ f ) of the resonance frequency is around 0 ppm / ° C.

なお、共振周波数の温度係数（τf）は、２５℃における共振周波数（ｆ25）と、５５℃における共振周波数（ｆ55）の値とを用いて、共振周波数温度曲線を直線近似したときの傾き（１次微係数）を表わすものであり、その値はτf＝（ｆ55−ｆ25）／（ｆ25・（５５℃−２５℃））の式によって求められる。 The temperature coefficient (τ f ) of the resonance frequency is obtained by linearly approximating the resonance frequency temperature curve using the resonance frequency (f 25 ) at 25 ° C. and the value of the resonance frequency (f 55 ) at 55 ° C. It represents the slope (first derivative), and its value is obtained by the following formula: τ f = (f 55 −f 25 ) / (f 25 · (55 ° C.−25 ° C.)).

そこで、上述のような要求に応えることが可能な高周波用誘電体磁器組成物として、例えば、比誘電率（εr）が４０〜６０と高い誘電体磁器として、希土類元素（Ｌｎ）、Ａｌ、Ｃａ、Ｚｎ、Ｍ（Ｍ：ＮｂおよびＴａのうちの少なくとも１種）およびＴｉを含む高周波用誘電体磁器組成物が提案されている（特許文献１）。 Therefore, as a dielectric ceramic composition for high frequency that can meet the above requirements, for example, a dielectric ceramic having a high relative dielectric constant (ε r ) of 40 to 60, rare earth elements (Ln), Al, A dielectric ceramic composition for high frequency containing Ca, Zn, M (M: at least one of Nb and Ta) and Ti has been proposed (Patent Document 1).

この高周波用誘電体磁器組成物は、組成式：（１−ｙ）ｘＣａＴｉaＯ1+2a−（１−ｙ）（１−ｘ）Ｃａ（Ｚｎ1/3Ｍ2/3）bＯ1+2b−ｙＬｎＡｌcＯ(3+3c)/2（ただし、ｘ、ｙはモル比）で表わされる組成を有する高周波用誘電体磁器組成物であって、α＝（１−ｙ）ｘとしたとき、ｘ、ｙ、α、ａ、ｂおよびｃが、０．５６０≦ｘ≦０．８００、０．０８０≦ｙ≦０．１８、α≦０．６５０、０．９８５≦ａ≦１．０５０、０．９００≦ｂ≦１．０２０、０．９００≦ｃ≦１．０５０の範囲内にあり、ペロブスカイト型結晶相を主結晶とすることを要件とする高周波用誘電体磁器組成物である。 This dielectric ceramic composition for high frequency has a composition formula: (1-y) xCaTi a O 1 + 2a-(1-y) (1-x) Ca (Zn 1/3 M 2/3 ) b O 1+ 2b- yLnAl c O (3 + 3c) / 2 (where x and y are molar ratios), a high-frequency dielectric ceramic composition having α = ( 1-y) x , X, y, α, a, b and c are 0.560 ≦ x ≦ 0.800, 0.080 ≦ y ≦ 0.18, α ≦ 0.650, 0.985 ≦ a ≦ 1.050, It is a dielectric ceramic composition for high frequencies that is in the range of 0.900 ≦ b ≦ 1.020 and 0.900 ≦ c ≦ 1.050 and requires that the perovskite crystal phase is a main crystal.

そして、この高周波用誘電体磁器組成物においては、比誘電率（εr）が４０〜６０と大きく、Ｑ値が１ＧＨｚにおいて３００００以上と高く、かつ、共振周波数の温度係数（τｆ）を０±３０（ｐｐｍ／℃）に制御することができるとされている。 In this high frequency dielectric ceramic composition, the relative dielectric constant (ε r ) is as large as 40 to 60, the Q value is as high as 30000 or more at 1 GHz, and the temperature coefficient (τf) of the resonance frequency is 0 ±. It can be controlled to 30 (ppm / ° C.).

ところで近年、通信機などの分野においては、低価格競争が激しく、それに用いられる高周波用誘電体磁器にも低コスト化が求められている。そして、高周波用誘電体磁器については、製造工程における焼成時のエネルギーコストの、製品の全体的なコストに占める割合が大きく、そのため、特性を犠牲にすることなく、低温焼成が可能な高周波用誘電体磁器組成物が要求されている。   By the way, in recent years, in the field of communication equipment and the like, low price competition is fierce, and cost reduction is also required for high frequency dielectric ceramics used therefor. For high-frequency dielectric ceramics, the ratio of energy costs during firing in the manufacturing process to the overall cost of the product is large. Therefore, high-frequency dielectrics that can be fired at low temperatures without sacrificing characteristics. A body porcelain composition is required.

しかしながら、特許文献１の高周波用誘電体磁器組成物は、最適焼成温度が１５５０℃と高いため、さらに低い温度で焼成することが可能な高周波用誘電体磁器組成物が要求されているのが実状である。
特開２００１−１９２２６５号公報 However, since the optimum firing temperature of the high frequency dielectric ceramic composition of Patent Document 1 is as high as 1550 ° C., there is a demand for a high frequency dielectric ceramic composition that can be fired at a lower temperature. It is.
JP 2001-192265 A

本願発明は上記課題を解決するものであり、低温焼成（１４００℃以下の温度での焼成）が可能で、マイクロ波やミリ波などの高周波領域で使用しても、高い比誘電率（εr）と、高いＱ値を有し、また共振周波数の温度係数（τf）の絶対値が小さい高周波用誘電体磁器組成物、それを用いた誘電体共振器、誘電体フィルタ、誘電体デュプレクサ、および通信機装置を提供することを目的とする。 The present invention solves the above-mentioned problems, and can be fired at a low temperature (fired at a temperature of 1400 ° C. or lower), and has a high relative dielectric constant (ε r) even when used in a high frequency region such as microwaves and millimeter waves. ), A high-frequency dielectric ceramic composition having a high Q value and a small absolute value of the temperature coefficient (τ f ) of the resonance frequency, a dielectric resonator using the same, a dielectric filter, a dielectric duplexer, And it aims at providing a communication apparatus.

上記課題を解決するために、本願発明（請求項１）の高周波用誘電体磁器組成物は、
金属元素として、少なくとも希土類（Ｌｎ）、Ａｌ、Ｃａ、Ｔｉ，Ｍ１，Ｍ２およびＷを含有する組成物を主成分とし、前記Ｍ１がＺｎおよびＭｇのうち少なくとも１種、前記Ｍ２がＮｂおよびＴａのうち少なくとも１種であり、かつ、
該主成分のモル比による組成式を（１−ｙ）ｘＣａＴｉaＯ1+2a−（１−ｙ）（１−ｘ）Ｃａ｛（Ｍ１）1/3（Ｍ２1-zＷz）2/3｝bＯ1+2b−ｙＬｎＡｌcＯ(3+3c)/2としたとき、
ｘ、ｙ、ｚ、α（＝（１−ｙ）ｘ）、ａ、ｂおよびｃがそれぞれ、
０．５６≦ｘ≦０．８
０．０８≦ｙ≦０．１８
０．０５≦ｚ≦０．５
α≦０．６６０
０．９８５≦ａ≦１．０５
０．９≦ｂ≦１．０２
０．９≦ｃ≦１．０５
を満足することを特徴としている。 In order to solve the above problems, the dielectric ceramic composition for high frequency of the present invention (Claim 1) is:
As a metal element, a composition containing at least rare earth (Ln), Al, Ca, Ti, M1, M2 and W is a main component, wherein M1 is at least one of Zn and Mg, and M2 is Nb and Ta. At least one of them, and
The composition formula according to the molar ratio of the main component is expressed as (1-y) xCaTi a O 1 + 2a-(1-y) (1-x) Ca {(M1) 1/3 (M2 1-z W z ) 2 / 3} b O 1 + 2b -yLnAl c O (3 + 3c) / 2 and the time,
x, y, z, α (= (1−y) x), a, b and c are respectively
0.56 ≦ x ≦ 0.8
0.08 ≦ y ≦ 0.18
0.05 ≦ z ≦ 0.5
α ≦ 0.660
0.985 ≦ a ≦ 1.05
0.9 ≦ b ≦ 1.02
0.9 ≦ c ≦ 1.05
It is characterized by satisfying.

また、本願発明（請求項２）の誘電体共振器は、誘電体磁器が入出力端子に電磁界結合して作動するものである誘電体共振器であって、前記誘電体磁器が、請求項１記載の高周波用誘電体磁器組成物からなるものであることを特徴としている。   The dielectric resonator according to the present invention (Claim 2) is a dielectric resonator in which the dielectric ceramic is operated by electromagnetic coupling to an input / output terminal, and the dielectric ceramic is claimed in claim. It is characterized by comprising the dielectric ceramic composition for high frequency described in 1.

また、本願発明（請求項３）の誘電体フィルタは、請求項２に記載の誘電体共振器と、前記誘電体共振器の入出力端子に接続される外部結合手段とを備えていることを特徴としている。   A dielectric filter according to the present invention (Claim 3) includes the dielectric resonator according to Claim 2 and external coupling means connected to an input / output terminal of the dielectric resonator. It is a feature.

また、本願発明（請求項４）の誘電体デュプレクサは、少なくとも２つの誘電体フィルタと、前記誘電体フィルタのそれぞれに接続される入出力接続手段と、前記誘電体フィルタに共通に接続されるアンテナ接続手段とを備える誘電体デュプレクサであって、前記誘電体フィルタの少なくとも１つが請求項３記載の誘電体フィルタであることを特徴としている。   The dielectric duplexer of the present invention (Claim 4) includes at least two dielectric filters, input / output connection means connected to each of the dielectric filters, and an antenna commonly connected to the dielectric filters. A dielectric duplexer comprising connecting means, wherein at least one of the dielectric filters is the dielectric filter according to claim 3.

また、本願発明（請求項５）の通信機装置は、請求項４記載の誘電体デュプレクサと、前記誘電体デュプレクサの少なくとも１つの入出力接続手段に接続される送信用回路と、前記送信用回路に接続される前記入出力手段とは異なる少なくとも１つの入出力接続手段に接続される受信用回路と、前記誘電体デュプレクサのアンテナ接続手段に接続されるアンテナとを備えていることを特徴としている。   According to a fifth aspect of the present invention, there is provided a communication apparatus comprising a dielectric duplexer according to claim 4, a transmission circuit connected to at least one input / output connection means of the dielectric duplexer, and the transmission circuit. A reception circuit connected to at least one input / output connection means different from the input / output means connected to the antenna, and an antenna connected to the antenna connection means of the dielectric duplexer. .

本願発明（請求項１）の高周波用誘電体磁器組成物は、組成式を（１−ｙ）ｘＣａＴｉaＯ1+2a−（１−ｙ）（１−ｘ）Ｃａ｛（Ｍ１）1/3（Ｍ２1-zＷz）2/3｝bＯ1+2b−ｙＬｎＡｌcＯ(3+3c)/2とし、Ｍ１をＺｎおよびＭｇのうち少なくとも１種、Ｍ２をＮｂおよびＴａのうち少なくとも１種としたときに、ｘ、ｙ、ｚ、α（＝（１−ｙ）ｘ）、ａ、ｂおよびｃがそれぞれ、ｘ＝０．５６〜０．８、ｙ＝０．０８〜０．１８、ｚ＝０．０５〜０．５、α＝０．６６０以下、ａ＝０．９８５〜１．０５、ｂ＝０．９〜１．０２、ｃ＝０．９〜１．０５の要件を満たすようにしているので、低温焼成（１４００℃以下の温度での焼成）が可能で、マイクロ波やミリ波などの高周波領域で使用しても、高い比誘電率（εr）と、高いＱ値を有し、また共振周波数の温度係数（τf）の絶対値が小さい、高周波用誘電体磁器組成物を得ることができる。 The dielectric ceramic composition for high frequency of the present invention (Claim 1) has a composition formula of (1-y) xCaTi a O 1 + 2a-(1-y) (1-x) Ca {(M1) 1/3 (M2 1-z W z) 2/3} b O 1 + 2b -yLnAl c O (3 + 3c) / 2 and then, at least one of the M1 Zn and Mg, at least one of the M2 Nb and Ta When seeds are used, x, y, z, α (= (1−y) x), a, b, and c are x = 0.56 to 0.8 and y = 0.08 to 0.18, respectively. , Z = 0.05 to 0.5, α = 0.660 or less, a = 0.985 to 1.05, b = 0.9 to 1.02, and c = 0.9 to 1.05. Since it is made to satisfy, low temperature firing (firing at a temperature of 1400 ° C. or lower) is possible, and even when used in a high frequency region such as microwaves and millimeter waves, a high dielectric constant (ε r ) and a high Q Value The absolute value of the temperature coefficient of resonant frequency (tau f) is small, it is possible to obtain a high frequency dielectric ceramic composition.

すなわち、上記組成を有する高周波用誘電体磁器組成物において、ＮｂまたはＴａの一部をＷ（タングステン）で置換するとともに、Ｗ（タングステン）置換量を制御することにより、低温焼成（１４００℃以下の温度での焼成）を可能にすることができる。   That is, in the high frequency dielectric ceramic composition having the above composition, a part of Nb or Ta is replaced with W (tungsten), and the amount of W (tungsten) replacement is controlled, so that low temperature firing (1400 ° C. or less) is achieved. Calcination at temperature).

また、本願発明の高周波用誘電体磁器組成物を用いた場合、焼成温度（最高温度）が１３００〜１４００℃の低温焼成を行った場合にも、高い比誘電率（εr）と、高いＱ値を有し、かつ、共振周波数の温度係数（τf）の絶対値が小さい、優れた特性を有する高周波用誘電体磁器を得ることが可能になる。具体的には、比誘電率（εｒ）：４０以上、Ｑ値：３５０００以上、共振周波数の温度係数（τf）の絶対値：３０（ｐｐｍ／℃）以内というような優れた特性を実現することが可能になる。 In addition, when the high frequency dielectric ceramic composition of the present invention is used, a high relative dielectric constant (ε r ) and a high Q are also obtained when low temperature firing is performed at a firing temperature (maximum temperature) of 1300 to 1400 ° C. It is possible to obtain a high-frequency dielectric ceramic having excellent characteristics and having a small value and a small absolute value of the temperature coefficient (τ f ) of the resonance frequency. Specifically, excellent characteristics such as relative dielectric constant (εr): 40 or more, Q value: 35000 or more, and absolute value of temperature coefficient (τ f ) of resonance frequency: within 30 (ppm / ° C.) are realized. It becomes possible.

なお、一般的に、誘電体磁器組成物などのセラミックスを焼成する場合、焼成工程における最高温度が１４００℃を超えると、ＭｏＳｉ2（珪化モリブデン）を発熱体に用いた焼成炉を使用して焼成を行うことが必要になり、ＭｏＳｉ2発熱体が高価なこと、ＭｏＳｉ2発熱体を用いた焼成炉は容積が小さく、生産性が低いばかりでなく、高温まで昇温するため消費電力が多いことなどから、コストの増大を招く傾向がある。これに対して、焼成工程における最高温度が１４００℃以下である場合、安価なＳｉＣ（炭化珪素）を発熱体に用いた、大容積の焼成炉を使用して効率よく焼成を行うことが可能になり、コストの低減を図ることが可能になる。 In general, when firing ceramics such as a dielectric ceramic composition, when the maximum temperature in the firing process exceeds 1400 ° C., firing is performed using a firing furnace using MoSi 2 (molybdenum silicide) as a heating element. The MoSi 2 heating element is expensive, the firing furnace using the MoSi 2 heating element is not only small in volume and low in productivity, but also consumes a lot of power because it rises to a high temperature. As a result, the cost tends to increase. On the other hand, when the maximum temperature in the firing step is 1400 ° C. or lower, it is possible to perform firing efficiently using a large-capacity firing furnace using inexpensive SiC (silicon carbide) as a heating element. Thus, the cost can be reduced.

また、本願発明の高周波用誘電体磁器組成物には、本願発明の目的を損なわない範囲内で微量の添加物を添加することも可能である。例えば、ＳｉＯ2、ＭｎＣＯ3、Ｂ2Ｏ3、ＮｉＯ、ＣｕＯ、Ｌｉ2ＣＯ3、Ｐｂ3Ｏ4、Ｂｉ2Ｏ3、Ｖ2Ｏ5、Ｆｅ2Ｏ3などを０．０１〜１．０重量％添加することにより、特性の劣化を抑えながら、焼成温度をさらに低下させることが可能になる。
その他にも、ＢａＣＯ3、ＳｒＣＯ3などを１〜３重量％添加することにより、比誘電率（εｒ）と共振周波数の温度係数（τf）の微調整が可能になり、さらに特性の優れた高周波用誘電体磁器を得ることが可能になる。 Moreover, it is also possible to add a trace amount additive to the dielectric ceramic composition for high frequency of this invention within the range which does not impair the objective of this invention. For example, SiO 2, MnCO 3, B 2 O 3, NiO, CuO, Li 2 CO 3, Pb 3 O 4, Bi 2 O 3, V 2 O 5, Fe 2 O 3 and 0.01 to 1.0 By adding wt%, it becomes possible to further lower the firing temperature while suppressing deterioration of the characteristics.
In addition, by adding 1 to 3% by weight of BaCO 3 , SrCO 3, etc., it becomes possible to finely adjust the relative dielectric constant (εr) and the temperature coefficient (τ f ) of the resonance frequency, and further excellent characteristics. A high frequency dielectric ceramic can be obtained.

また、本願発明（請求項２）の誘電体共振器は、誘電体磁器が入出力端子に電磁界結合して作動する誘電体共振器において、誘電体磁器として、上記の請求項１記載の高周波用誘電体磁器組成物からなる誘電体磁器（すなわち、高い比誘電率（εr）と、高いＱ値を有し、かつ、共振周波数の温度係数（τf）の絶対値が小さい誘電体磁器）を用いるようにしているので、小型で、誘電損失が小さく、共振周波数の温度安定性に優れた誘電体共振器を提供することが可能になる。 The dielectric resonator according to the present invention (Claim 2) is a dielectric resonator in which a dielectric ceramic is operated by electromagnetic coupling to an input / output terminal, and the high frequency according to Claim 1 is used as the dielectric ceramic. Dielectric ceramic made of a dielectric ceramic composition for use (that is, a dielectric ceramic having a high relative dielectric constant (ε r ), a high Q value, and a small absolute value of the temperature coefficient (τ f ) of the resonance frequency) Therefore, it is possible to provide a dielectric resonator that is small in size, has a small dielectric loss, and is excellent in temperature stability of the resonance frequency.

また、本願発明（請求項３）の誘電体フィルタは、請求項２に記載の誘電体共振器と、該誘電体共振器の入出力端子に接続される外部結合手段とを備えているので、小型で、良好な特性を備えた誘電体フィルタを提供することが可能になる。   Moreover, since the dielectric filter of the present invention (Claim 3) includes the dielectric resonator according to Claim 2 and external coupling means connected to the input / output terminals of the dielectric resonator, It is possible to provide a dielectric filter having a small size and good characteristics.

また、本願発明（請求項４）の誘電体デュプレクサは、少なくとも２つの誘電体フィルタと、誘電体フィルタのそれぞれに接続される入出力接続手段と、誘電体フィルタに共通に接続されるアンテナ接続手段とを備える誘電体デュプレクサであって、誘電体フィルタの少なくとも１つとして、請求項３記載の誘電体フィルタを用いているので、小型で、良好な特性を備えた誘電体デュプレクサを提供することが可能になる。   The dielectric duplexer of the present invention (Claim 4) includes at least two dielectric filters, input / output connection means connected to each of the dielectric filters, and antenna connection means commonly connected to the dielectric filters. A dielectric duplexer comprising: and a dielectric duplexer having good characteristics because the dielectric filter according to claim 3 is used as at least one of the dielectric filters. It becomes possible.

また、本願発明（請求項５）の通信機装置は、請求項４記載の誘電体デュプレクサと、誘電体デュプレクサの少なくとも１つの入出力接続手段に接続される送信用回路と、送信用回路に接続される入出力手段とは異なる少なくとも１つの入出力接続手段に接続される受信用回路と、誘電体デュプレクサのアンテナ接続手段に接続されるアンテナとを備えているので、小型で、良好な特性を備えた通信機装置を提供することが可能になる。   A communication device according to the present invention (Claim 5) is connected to the dielectric duplexer according to Claim 4, a transmission circuit connected to at least one input / output connection means of the dielectric duplexer, and a transmission circuit. A receiving circuit connected to at least one input / output connection means different from the input / output means and an antenna connected to the antenna connection means of the dielectric duplexer. It is possible to provide a communication device provided.

以下、本願発明の実施の形態を示して本願発明の特徴とするところをさらに詳しく説明する。
まず、本願発明の高周波用誘電体磁器組成物が適用される誘電体共振器、誘電体フィルタ、誘電体デュプレクサ、および通信機装置について説明する。
図１は、本願発明の高周波用誘電体磁器組成物を誘電体（誘電体磁器）として用いた誘電体共振器１の基本的な構造を図解的に示す断面図である。 Hereinafter, the features of the present invention will be described in more detail with reference to embodiments of the present invention.
First, a dielectric resonator, a dielectric filter, a dielectric duplexer, and a communication device to which the high frequency dielectric ceramic composition of the present invention is applied will be described.
FIG. 1 is a cross-sectional view schematically showing the basic structure of a dielectric resonator 1 using the high frequency dielectric ceramic composition of the present invention as a dielectric (dielectric ceramic).

この誘電体共振器１においては、図１に示すように、金属ケース２内に、支持台３によって支持された柱状の誘電体磁器４が配置されている。そして、金属ケース２には、同軸ケーブル７の中心導体と外導体との間に結合ループ５を形成した入力端子９ａと、同軸ケーブル８の中心導体と外導体との間に結合ループ６を形成した出力端子９ｂが設けられている。なお、入力端子９ａと出力端子９ｂは、同軸ケーブル７，８の外導体と金属ケース２とが電気的に接合された状態で、金属ケース２によって保持されている。   In the dielectric resonator 1, as shown in FIG. 1, a columnar dielectric ceramic 4 supported by a support base 3 is disposed in a metal case 2. In the metal case 2, an input terminal 9 a in which a coupling loop 5 is formed between the center conductor and the outer conductor of the coaxial cable 7 and a coupling loop 6 is formed between the center conductor and the outer conductor of the coaxial cable 8. The output terminal 9b is provided. The input terminal 9a and the output terminal 9b are held by the metal case 2 in a state where the outer conductors of the coaxial cables 7 and 8 and the metal case 2 are electrically joined.

誘電体磁器４は、入力端子９ａおよび出力端子９ｂに電磁界結合して作動するもので、入力端子９ａから入力された所定の周波数の信号だけが出力端子９ｂから出力される。
そして、この誘電体共振器１が備えている誘電体磁器４に、本願発明の高周波用誘電体磁器組成物が用いられている。 The dielectric porcelain 4 operates by electromagnetic coupling to the input terminal 9a and the output terminal 9b, and only a signal having a predetermined frequency input from the input terminal 9a is output from the output terminal 9b.
The high frequency dielectric ceramic composition of the present invention is used for the dielectric ceramic 4 provided in the dielectric resonator 1.

なお、図１に示す誘電体共振器１は、基地局などで用いられるＴＥ０１δモード共振器であるが、本願発明の高周波用誘電体磁器組成物は、他のＴＥモード、Ｍモード、およびＴＥＭモードなどを利用する誘電体共振器にも同様に適用することが可能である。   The dielectric resonator 1 shown in FIG. 1 is a TE01δ mode resonator used in a base station or the like, but the high-frequency dielectric ceramic composition of the present invention has other TE modes, M modes, and TEM modes. The present invention can be similarly applied to a dielectric resonator using the above.

図２は、上述の誘電体共振器１を用いて構成される通信機装置の一例を示すブロック図である。
図２に示す通信機装置１０は、誘電体デュプレクサ１２、送信用回路１４、受信用回路１６およびアンテナ１８を備えている。
送信用回路１４は、誘電体デュプレクサ１２の入力接続手段２０に接続され、受信用回路１６は、誘電体デュプレクサ１２の出力接続手段２２に接続されている。
また、アンテナ１８は、誘電体デュプレクサ１２のアンテナ接続手段２４に接続されている。 FIG. 2 is a block diagram showing an example of a communication device configured using the dielectric resonator 1 described above.
The communication device 10 shown in FIG. 2 includes a dielectric duplexer 12, a transmission circuit 14, a reception circuit 16, and an antenna 18.
The transmission circuit 14 is connected to the input connection means 20 of the dielectric duplexer 12, and the reception circuit 16 is connected to the output connection means 22 of the dielectric duplexer 12.
The antenna 18 is connected to the antenna connection means 24 of the dielectric duplexer 12.

通信機装置１０を構成する誘電体デュプレクサ１２は、２つの誘電体フィルタ２６、２８を備えている。誘電体フィルタ２６、２８は、本願発明の誘電体共振器に外部結合手段を接続することにより構成されるものである。図２に示す実施形態では、例えば図１に示す誘電体共振器１の入出力端子９ａ，９ｂにそれぞれ外部結合手段３０を接続することにより、誘電体フィルタ２６および２８のそれぞれが構成されている。   The dielectric duplexer 12 constituting the communication device 10 includes two dielectric filters 26 and 28. The dielectric filters 26 and 28 are configured by connecting external coupling means to the dielectric resonator of the present invention. In the embodiment shown in FIG. 2, for example, each of the dielectric filters 26 and 28 is configured by connecting the external coupling means 30 to the input / output terminals 9a and 9b of the dielectric resonator 1 shown in FIG. .

そして、一方の誘電体フィルタ２６は、入力接続手段２０と他方の誘電体フィルタ２８との間に配設され、他方の誘電体フィルタ２８は、一方の誘電体フィルタ２６と出力接続手段２２との間に配設されている。   One dielectric filter 26 is disposed between the input connection means 20 and the other dielectric filter 28, and the other dielectric filter 28 is connected between the one dielectric filter 26 and the output connection means 22. It is arranged in between.

次に、図１の誘電体共振器１に用いられる誘電体磁器４のように、高周波領域において有利に用いられる誘電体磁器に使用される本願発明の高周波用誘電体磁器組成物について説明する。   Next, the high frequency dielectric ceramic composition of the present invention used for a dielectric ceramic that is advantageously used in a high frequency region, such as the dielectric ceramic 4 used in the dielectric resonator 1 of FIG. 1, will be described.

本願発明の高周波用誘電体磁器組成物は、組成式を（１−ｙ）ｘＣａＴｉaＯ1+2a−（１−ｙ）（１−ｘ）Ｃａ｛（Ｍ１）1/3（Ｍ２1-zＷz）2/3｝bＯ1+2b−ｙＬｎＡｌcＯ(3+3c)/2としたとき、Ｍ１がＺｎおよびＭｇのうち少なくとも１種、Ｍ２がＮｂおよびＴａのうち少なくとも１種であり、かつ、
ｘ、ｙ、ｚ、α（＝（１−ｙ）ｘ）、ａ、ｂおよびｃがそれぞれ、
０．５６≦ｘ≦０．８
０．０８≦ｙ≦０．１８
０．０５≦ｚ≦０．５
α≦０．６６０
０．９８５≦ａ≦１．０５
０．９≦ｂ≦１．０２
０．９≦ｃ≦１．０５
の要件を満足すように原料が選択され、配合される。 The high frequency dielectric ceramic composition of the present invention has a composition formula of (1-y) xCaTi a O 1 + 2a-(1-y) (1-x) Ca {(M1) 1/3 (M2 1-z W z) 2/3} b O 1 + 2b -yLnAl c O (3 + 3c) / 2 and the time, M1 is at least one of Zn and Mg, M2 is at least one kind of Nb and Ta ,And,
x, y, z, α (= (1−y) x), a, b and c are respectively
0.56 ≦ x ≦ 0.8
0.08 ≦ y ≦ 0.18
0.05 ≦ z ≦ 0.5
α ≦ 0.660
0.985 ≦ a ≦ 1.05
0.9 ≦ b ≦ 1.02
0.9 ≦ c ≦ 1.05
The raw materials are selected and blended so as to satisfy the above requirements.

そして、上記組成式で示される高周波用誘電体磁器組成物において、ＮｂまたはＴａの一部をＷ（タングステン）で置換するとともに、Ｗ（タングステン）置換量を制御することにより、１４００℃以下の温度での低温焼成が可能になるようにしている。   In the high frequency dielectric ceramic composition represented by the above composition formula, a part of Nb or Ta is replaced with W (tungsten) and the amount of W (tungsten) replacement is controlled to a temperature of 1400 ° C. or lower. Low temperature firing is possible.

以下に本願発明の実施例を示して、本願発明の特徴とするところを具体的に説明する。   Examples of the present invention will be shown below to specifically describe the features of the present invention.

(１)出発原料として、高純度のアルミナ（Ａｌ2Ｏ3）、炭酸カルシウム（ＣａＣＯ3）、酸化チタン（ＴｉＯ2）、酸化ニオブ（Ｎｂ2Ｏ5）、酸化タンタル（Ｔａ2Ｏ5）、希土類酸化物（Ｎｄ2Ｏ3）、酸化亜鉛（ＺｎＯ）、酸化タングステン（ＷＯ3）の各粉末を準備した。
(２)次に、表１，２，３，４および５に示すｘ、ｙ、ｚ、ａ、ｂ、およびｃにそれぞれ選ばれた、組成式：（１−ｙ）・ｘＣａＴｉaＯ1+2a−（１−ｙ）・（１−ｘ）Ｃａ｛Ｚｎ1/3（Ｍ２1-zＷz）2/3｝bＯ1+2b−ｙＮｄＡｌcＯ(3+3c)/2（ここで、Ｍ２はＮｂおよび／またはＴａ）で表わされる組成が得られるように、前記の各出発原料粉末を調合した。
(３)それから、この調合粉末を、ボールミルを用いて１６時間湿式混合し、均一に分散させた後、脱水および乾燥処理を施して調整粉末を得た。
(４)次に、この調整粉末を、１０００〜１３００℃の温度で３時間仮焼し、得られた仮焼粉末に適量のバインダを加えて、再びボールミルを用いて１６時間湿式粉砕することにより、焼成用粉末を得た。
(５)そして、この焼成用粉末を、１５００ｋｇｆ／ｃｍ2〜２５００ｋｇｆ／ｃｍ2（１．４７×１０2ＭＰａ〜２．４５×１０2ＭＰａ）の圧力で円板状にプレス成形した後、１３５０℃で４時間、大気中において焼成し、直径１０ｍｍ、厚さ５ｍｍの円板状の焼結体（試料）を得た。 (1) As a starting material, high-purity alumina (Al 2 O 3 ), calcium carbonate (CaCO 3 ), titanium oxide (TiO 2 ), niobium oxide (Nb 2 O 5 ), tantalum oxide (Ta 2 O 5 ), Rare earth oxide (Nd 2 O 3 ), zinc oxide (ZnO), and tungsten oxide (WO 3 ) powders were prepared.
(2) Next, composition formulas selected from x, y, z, a, b, and c shown in Tables 1, 2, 3, 4, and 5, respectively: (1-y) · xCaTi a O 1+ 2a- (1-y). (1-x) Ca {Zn 1/3 (M2 1-z W z ) 2/3 } b O 1 + 2b -yNdAl c O (3 + 3c) / 2 (where , M2 was prepared so that each of the above starting material powders was prepared so that a composition represented by Nb and / or Ta) was obtained.
(3) Then, this blended powder was wet-mixed for 16 hours using a ball mill and dispersed uniformly, and then subjected to dehydration and drying treatments to obtain adjusted powder.
(4) Next, this adjusted powder is calcined at a temperature of 1000 to 1300 ° C. for 3 hours, an appropriate amount of binder is added to the obtained calcined powder, and wet pulverized again using a ball mill for 16 hours. A powder for firing was obtained.
(5) After the baking powder was press-molded into a disk shape at a pressure of 1500kgf / cm 2 ~2500kgf / cm 2 (1.47 × 10 2 MPa~2.45 × 10 2 MPa), 1350 It baked in air | atmosphere at 4 degreeC for 4 hours, and obtained the disk-shaped sintered compact (sample) of diameter 10mm and thickness 5mm.

それから、得られた各焼結体（各試料）について、測定周波数ｆが６〜８ＧＨｚにおける比誘電率（εｒ）とＱ値を、ＴＥ011モードによる両端短絡型誘電体共振器法にて測定し、Ｑ×ｆ（周波数）＝一定、の式に基づき、Ｑ値（１ＧＨｚ）に換算した。また、ＴＥ01δモードによるキャビティ法にて共振周波数を測定し、２５〜５５℃の温度範囲での共振周波数の温度係数（τf）を測定した。 Then, for each of the obtained sintered bodies (each sample), the relative dielectric constant (εr) and the Q value at a measurement frequency f of 6 to 8 GHz were measured by a both-end short-circuited dielectric resonator method using a TE 011 mode. Q × f (frequency) = constant, and converted to a Q value (1 GHz). In addition, the resonance frequency was measured by the cavity method using the TE 01δ mode, and the temperature coefficient (τ f ) of the resonance frequency in the temperature range of 25 to 55 ° C. was measured.

上述のようにして測定した、各試料の比誘電率（εｒ）、Ｑ値（１ＧＨｚ）、および共振周波数の温度係数（τf）を、表１、２、３、４、および５に示す。 Tables 1, 2, 3, 4, and 5 show the relative dielectric constant (εr), the Q value (1 GHz), and the temperature coefficient (τ f ) of the resonance frequency measured as described above.

Figure 0004830286
Figure 0004830286

Figure 0004830286
Figure 0004830286

Figure 0004830286
Figure 0004830286

Figure 0004830286
Figure 0004830286

Figure 0004830286
Figure 0004830286

表１、２、３、４、および５において、試料番号に＊を付したものは、この発明の範囲外の試料である。
表１、２、３、４、および５において、試料番号が奇数の試料は、Ｍ２（Ｎｂおよび／またはＴａ）サイトをＷ（タングステン）で置換していない試料（ｚ＝０）であり、試料番号が偶数の試料は、Ｍ２（Ｎｂおよび／またはＴａ）サイトの１０mol％をＷで置換した試料である。 In Tables 1, 2, 3, 4, and 5, the sample numbers marked with * are samples outside the scope of the present invention.
In Tables 1, 2, 3, 4, and 5, the sample with the odd sample number is a sample in which the M2 (Nb and / or Ta) site is not replaced with W (tungsten) (z = 0). Samples with an even number are samples in which 10 mol% of M2 (Nb and / or Ta) sites are replaced with W.

表１〜５に示すように、Ｍ２（Ｎｂおよび／またはＴａ）サイトの１０mol％をＷで置換した試料（試料番号が偶数の試料）においては、Ｍ２（Ｎｂおよび／またはＴａ）サイトをＷで置換していない試料（試料番号が奇数の試料）と比較して、εｒとＱ値が増加することが確認された。   As shown in Tables 1 to 5, in the sample in which 10 mol% of the M2 (Nb and / or Ta) site was replaced with W (sample with an even sample number), the M2 (Nb and / or Ta) site was replaced with W. It was confirmed that εr and Q value increased as compared with the sample without substitution (sample with an odd sample number).

一方、主成分組成物の組成範囲が本願発明の範囲から外れた試料（試料番号に＊を付した試料）の場合には、εｒが４０未満になったり、Ｑ値が３５０００未満になったり、τｆの絶対値が３０ｐｐｍ／℃を超えたりして、十分に優れたマイクロ波誘電特性を得ることができなかった。   On the other hand, in the case of a sample in which the composition range of the main component composition is outside the scope of the present invention (sample number marked with *), εr is less than 40, the Q value is less than 35000, When the absolute value of τf exceeded 30 ppm / ° C., a sufficiently excellent microwave dielectric characteristic could not be obtained.

この実施例２では、表１の試料番号１１，１２の試料について、Ｎｄサイトを他の希土類（Ｙ，Ｌａ，Ｓｍ，Ｐｒ）で置換して、組成式：０．５５３ＣａＴｉＯ3−０．２９７Ｃａ｛Ｚｎ1/3（Ｎｂ1-zＷz）2/3｝Ｏ3−０．１５０ＬｎＡｌＯ3で表わされる高周波用誘電体磁器組成物を作製した。なお、この実施例２の高周波用誘電体磁器組成物の製造方法および製造条件は、上記実施例１の場合と同様である。
また、この実施例２では、Ｎｄサイトを置換する希土類（Ｌｎ）として、Ｙ，Ｌａ，Ｓｍ，Ｐｒを用いた。そして、Ｙ，Ｌａ，Ｓｍ，Ｐｒの原料として、その酸化物であるＹ2Ｏ3，Ｌａ2Ｏ3，Ｓｍ2Ｏ3，Ｐｒ2Ｏ3を用いた。 In Example 2, with respect to the samples of Sample Nos. 11 and 12 in Table 1, the Nd site was replaced with another rare earth (Y, La, Sm, Pr), and the composition formula: 0.553CaTiO 3 −0.297Ca { A dielectric ceramic composition for high frequency represented by Zn 1/3 (Nb 1-z W z ) 2/3 } O 3 −0.150 LnAlO 3 was produced. The manufacturing method and manufacturing conditions of the high-frequency dielectric ceramic composition of Example 2 are the same as in Example 1.
In Example 2, Y, La, Sm, and Pr were used as the rare earth (Ln) that replaces the Nd site. Then, Y 2 O 3 , La 2 O 3 , Sm 2 O 3 , and Pr 2 O 3 that are oxides thereof were used as raw materials for Y, La, Sm, and Pr.

そして、得られた高周波用誘電体磁器組成物について、比誘電率（εｒ）、Ｑ値、および共振周波数の温度係数（τf）を測定した。なお、各特性の測定方法および条件は上記実施例１の場合と同様とした。
上述のようにして測定した比誘電率（εｒ）、Ｑ値（１ＧＨｚ）、および共振周波数の温度係数（τf）を表６に示す。 And about the obtained dielectric ceramic composition for high frequency, the dielectric constant ((epsilon) r), Q value, and the temperature coefficient ((tau) f ) of the resonant frequency were measured. The measurement method and conditions for each characteristic were the same as those in Example 1.
Table 6 shows the relative dielectric constant (εr), the Q value (1 GHz), and the temperature coefficient (τ f ) of the resonance frequency measured as described above.

Figure 0004830286
Figure 0004830286

表６においても、試料番号が奇数の試料は、Ｍ２（この実施例２ではＮｂ）サイトをＷ（タングステン）で置換していない試料（ｚ＝０）、試料番号が偶数の試料は、Ｍ２（Ｎｂ）サイトの１０mol％をＷで置換した試料である。   Also in Table 6, a sample with an odd sample number is a sample in which the M2 (Nb in this Example 2) site is not replaced with W (tungsten) (z = 0), and a sample with an even sample number is M2 ( Nb) A sample in which 10 mol% of sites are replaced with W.

表６に示すように、Ｎｄサイトの一部または全部を他の希土類で置換した場合にも、Ｍ２（Ｎｂ）サイトの１０mol％をＷで置換した試料（試料番号が偶数の試料）においては、Ｍ２（Ｎｂ）サイトをＷで置換していない試料（試料番号が奇数の試料）と比較して、εｒとＱ値が増加することが確認された。   As shown in Table 6, even when a part or all of the Nd site is replaced with another rare earth, in the sample in which 10 mol% of the M2 (Nb) site is replaced with W (sample with an even number), It was confirmed that εr and Q value increased as compared with a sample in which the M2 (Nb) site was not replaced with W (sample with an odd sample number).

この実施例３では、上記実施例１の表１の試料番号１１，１２，２１，２２の試料について、Ｚｎサイトの一部または全部をＭｇで置換して、組成式：（１−ｙ）・ｘＣａＴｉＯ3−（１−ｙ）・（１−ｘ）Ｃａ｛（Ｚｎ1-θＭｇθ）1/3（Ｎｂ1-zＷz）2/3｝Ｏ3−ｙＮｄＡｌＯ3で表わされる高周波用誘電体磁器組成物を作製した。なお、この実施例３の高周波用誘電体磁器組成物の製造方法および製造条件は、上記実施例１の場合と同様である。また、この実施例３では、Ｚｎサイトを置換するＭｇの原料として、その酸化物であるＭｇＯを用いた。 In Example 3, with respect to the samples of sample numbers 11, 12, 21, and 22 in Table 1 of Example 1, a part or all of the Zn sites were replaced with Mg, and the composition formula: (1-y) · xCaTiO 3 — (1-y) · (1-x) Ca {(Zn 1−θ Mg θ ) 1/3 (Nb 1−z W z ) 2/3 } O 3 —yNdAlO 3 A body porcelain composition was prepared. The manufacturing method and manufacturing conditions of the high-frequency dielectric ceramic composition of Example 3 are the same as in Example 1. In Example 3, MgO, which is an oxide thereof, was used as a Mg raw material for substituting Zn sites.

そして、得られた高周波用誘電体磁器組成物について、比誘電率（εｒ）、Ｑ値、および共振周波数の温度係数（τf）を測定した。なお、各特性の測定方法および条件は上記実施例１の場合と同様とした。
上述のようにして測定した比誘電率（εｒ）、Ｑ値（１ＧＨｚ）、および共振周波数の温度係数（τf）を表７に示す。 And about the obtained dielectric ceramic composition for high frequency, the dielectric constant ((epsilon) r), Q value, and the temperature coefficient ((tau) f ) of the resonant frequency were measured. The measurement method and conditions for each characteristic were the same as those in Example 1.
Table 7 shows the relative dielectric constant (εr), the Q value (1 GHz), and the temperature coefficient (τ f ) of the resonance frequency measured as described above.

Figure 0004830286
Figure 0004830286

表７においても、試料番号が奇数の試料は、Ｍ２サイト（この実施例ではＮｂ）をＷ（タングステン）で置換していない試料（ｚ＝０）であり、試料番号が偶数の試料は、Ｍ２（Ｎｂ）サイトの１０mol％をＷで置換した試料である。   Also in Table 7, a sample with an odd sample number is a sample (z = 0) in which the M2 site (Nb in this example) is not replaced with W (tungsten), and a sample with an even sample number is M2 (Nb) A sample in which 10 mol% of sites are replaced with W.

表７に示すように、Ｚｎサイトの一部または全部をＭｇで置換した場合にも、Ｍ２（ＮｂあるいはＴａ）サイトの１０mol％をＷで置換した試料（試料番号が偶数の試料）においては、Ｗで置換していない試料（試料番号が奇数の試料）と比較して、εｒとＱ値が増加することが確認された。   As shown in Table 7, even when a part or the whole of the Zn site was replaced with Mg, in the sample in which 10 mol% of the M2 (Nb or Ta) site was replaced with W (sample with an even number), It was confirmed that εr and Q value increased as compared with a sample not substituted with W (sample with an odd sample number).

この実施例４では、上記実施例１の表１の試料番号１１の試料について、Ｍ２（Ｎｂ）サイトのＷによる置換量を制御して、組成式：０．５５３ＣａＴｉＯ3−０．２９７Ｃａ（Ｚｎ1/3（Ｎｂ1-zＷz）2/3）Ｏ3−０．１５０ＮｄＡｌＯ3で表わされる高周波用誘電体磁器組成物を作製した。なお、この実施例４の高周波用誘電体磁器組成物の製造方法および製造条件は、上記実施例１の場合と同様である。 In this Example 4, the substitution amount of the M2 (Nb) site with W was controlled for the sample of Sample No. 11 in Table 1 of Example 1 above, and the composition formula: 0.553CaTiO 3 -0.297Ca (Zn 1 / 3 to produce a (Nb 1-z W z) 2/3) O 3 high frequency dielectric ceramic composition represented by -0.150NdAlO 3. The manufacturing method and manufacturing conditions of the high-frequency dielectric ceramic composition of Example 4 are the same as in Example 1.

そして、得られた高周波用誘電体磁器組成物について、比誘電率（εｒ）、Ｑ値、および共振周波数の温度係数（τf）を測定した。なお、各特性の測定方法および条件は上記実施例１の場合と同様とした。
上述のようにして測定した比誘電率（εｒ）、Ｑ値（１ＧＨｚ）、および共振周波数の温度係数（τf）を表８に示す。 And about the obtained dielectric ceramic composition for high frequency, the dielectric constant ((epsilon) r), Q value, and the temperature coefficient ((tau) f ) of the resonant frequency were measured. The measurement method and conditions for each characteristic were the same as those in Example 1.
Table 8 shows the relative dielectric constant (εr), the Q value (1 GHz), and the temperature coefficient (τ f ) of the resonance frequency measured as described above.

Figure 0004830286
Figure 0004830286

表８に示すように、Ｗの置換量を本願発明の範囲（０．０５≦ｚ≦０．５）とした場合、置換量が本願発明の範囲外にあるものに比べて、εｒとＱ値が増加することが確認された。   As shown in Table 8, when the substitution amount of W is within the range of the present invention (0.05 ≦ z ≦ 0.5), εr and Q value are compared with those in which the substitution amount is outside the range of the present invention. Was confirmed to increase.

なお、本願発明は上記実施例に限定されるものではなく、微量添加物の添加の有無、焼成条件などに関し、発明の範囲内において、種々の応用、変形を加えることが可能である。   In addition, this invention is not limited to the said Example, It is possible to add various application and deformation | transformation within the range of invention regarding the presence or absence of addition of a trace amount additive, baking conditions, etc.

上述のように、本願発明によれば、１４００℃以下の低い温度で焼成することが可能で、経済性に優れ、しかも、誘電率（εｒ）が４０以上、Ｑ値（１ＧＨｚ）が３５０００以上、共振周波数の温度係数（τf）の絶対値が３０ｐｐｍ／℃以内の優れた特性を備えた高周波用誘電体磁器組成物を提供することが可能になるとともに、この高周波用誘電体磁器組成物を用いることにより、小型化され、かつ優れた特性を有する誘電体共振器、誘電体フィルタ、誘電体デュプレクサ、および通信機装置を有利に構成することができる。
したがって、本願発明は、誘電体共振器、誘電体フィルタ、誘電体デュプレクサ、および通信機装置などの分野に広く利用することができる。 As described above, according to the present invention, it can be fired at a low temperature of 1400 ° C. or less, is excellent in economic efficiency, and has a dielectric constant (εr) of 40 or more, a Q value (1 GHz) of 35000 or more, It is possible to provide a high-frequency dielectric ceramic composition having excellent characteristics in which the absolute value of the temperature coefficient (τ f ) of the resonance frequency is within 30 ppm / ° C., and this high-frequency dielectric ceramic composition By using the dielectric resonator, the dielectric resonator, the dielectric filter, the dielectric duplexer, and the communication device that are downsized and have excellent characteristics can be advantageously configured.
Therefore, the present invention can be widely used in fields such as dielectric resonators, dielectric filters, dielectric duplexers, and communication apparatus.

本願発明の高周波用誘電体磁器組成物を用いて構成される誘電体共振器の基本的構造を図解的に示す断面図である。It is sectional drawing which shows the basic structure of the dielectric resonator comprised using the dielectric ceramic composition for high frequencies of this invention. 図１に示す誘電体共振器を用いて構成される通信機装置の一例を示すブロック図である。It is a block diagram which shows an example of the communication apparatus comprised using the dielectric resonator shown in FIG.

符号の説明Explanation of symbols

１ 誘電体共振器
２ 金属ケース
３ 支持台
４ 誘電体磁器
５、６ 結合ループ
７、８ 同軸ケーブル
９ａ 入力端子
９ｂ 出力端子
１０ 通信機装置
１２ 誘電体デュプレクサ
１４ 送信用回路
１６ 受信用回路
１８ アンテナ
２０ 入力接続手段
２２ 出力接続手段
２４ アンテナ接続手段
２６、２８ 誘電体フィルタ
３０ 外部結合手段 DESCRIPTION OF SYMBOLS 1 Dielectric resonator 2 Metal case 3 Support stand 4 Dielectric porcelain 5, 6 Coupling loop 7, 8 Coaxial cable 9a Input terminal 9b Output terminal 10 Communication apparatus 12 Dielectric duplexer 14 Transmission circuit 16 Reception circuit 18 Antenna 20 Input connection means 22 Output connection means 24 Antenna connection means 26, 28 Dielectric filter 30 External coupling means

Claims (5)

金属元素として、少なくとも希土類（Ｌｎ）、Ａｌ、Ｃａ、Ｔｉ，Ｍ１，Ｍ２およびＷを含有する組成物を主成分とし、前記Ｍ１がＺｎおよびＭｇのうち少なくとも１種、前記Ｍ２がＮｂおよびＴａのうち少なくとも１種であり、かつ、
該主成分のモル比による組成式を（１−ｙ）ｘＣａＴｉaＯ1+2a−（１−ｙ）（１−ｘ）Ｃａ｛（Ｍ１）1/3（Ｍ２1-zＷz）2/3｝bＯ1+2b−ｙＬｎＡｌcＯ(3+3c)/2としたとき、
ｘ、ｙ、ｚ、α（＝（１−ｙ）ｘ）、ａ、ｂおよびｃがそれぞれ、
０．５６≦ｘ≦０．８
０．０８≦ｙ≦０．１８
０．０５≦ｚ≦０．５
α≦０．６６０
０．９８５≦ａ≦１．０５
０．９≦ｂ≦１．０２
０．９≦ｃ≦１．０５
を満足することを特徴とする高周波用誘電体磁器組成物。 As a metal element, a composition containing at least rare earth (Ln), Al, Ca, Ti, M1, M2 and W is a main component, wherein M1 is at least one of Zn and Mg, and M2 is Nb and Ta. At least one of them, and
The composition formula according to the molar ratio of the main component is expressed as (1-y) xCaTi a O 1 + 2a-(1-y) (1-x) Ca {(M1) 1/3 (M2 1-z W z ) 2 / 3} b O 1 + 2b -yLnAl c O (3 + 3c) / 2 and the time,
x, y, z, α (= (1−y) x), a, b and c are respectively
0.56 ≦ x ≦ 0.8
0.08 ≦ y ≦ 0.18
0.05 ≦ z ≦ 0.5
α ≦ 0.660
0.985 ≦ a ≦ 1.05
0.9 ≦ b ≦ 1.02
0.9 ≦ c ≦ 1.05
A dielectric ceramic composition for high frequency, wherein: 誘電体磁器が入出力端子に電磁界結合して作動するものである誘電体共振器であって、前記誘電体磁器が、請求項１記載の高周波用誘電体磁器組成物からなるものであることを特徴とする誘電体共振器。   2. A dielectric resonator in which a dielectric ceramic is operated by electromagnetic coupling to an input / output terminal, and the dielectric ceramic is made of the dielectric ceramic composition for high frequency according to claim 1. A dielectric resonator. 請求項２に記載の誘電体共振器と、前記誘電体共振器の入出力端子に接続される外部結合手段とを備えていることを特徴とする誘電体フィルタ。   A dielectric filter comprising: the dielectric resonator according to claim 2; and an external coupling means connected to an input / output terminal of the dielectric resonator. 少なくとも２つの誘電体フィルタと、前記誘電体フィルタのそれぞれに接続される入出力接続手段と、前記誘電体フィルタに共通に接続されるアンテナ接続手段とを備える誘電体デュプレクサであって、前記誘電体フィルタの少なくとも１つが請求項３記載の誘電体フィルタであることを特徴とする誘電体デュプレクサ。   A dielectric duplexer comprising at least two dielectric filters, input / output connection means connected to each of the dielectric filters, and antenna connection means commonly connected to the dielectric filter, wherein the dielectric The dielectric duplexer according to claim 3, wherein at least one of the filters is a dielectric filter according to claim 3. 請求項４記載の誘電体デュプレクサと、前記誘電体デュプレクサの少なくとも１つの入出力接続手段に接続される送信用回路と、前記送信用回路に接続される前記入出力手段とは異なる少なくとも１つの入出力接続手段に接続される受信用回路と、前記誘電体デュプレクサのアンテナ接続手段に接続されるアンテナとを備えていることを特徴とする通信機装置。   5. The dielectric duplexer according to claim 4, a transmission circuit connected to at least one input / output connection means of the dielectric duplexer, and at least one input different from the input / output means connected to the transmission circuit. A communication apparatus comprising: a receiving circuit connected to an output connection means; and an antenna connected to an antenna connection means of the dielectric duplexer.
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