JP2000233970A - Dielectric porcelain composition for high frequency, dielectric resonator, dielectric filter, dielectric duplexer and communication apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a dielectric porcelain composition for high frequency having a high specific dielectric constant of 35-50 and a high Q value of >=20,000 (1 GHz) and capable of arbitrarily controlling the temperature coefficient of resonance frequency in a range with 0 (ppm/ deg.C) as the median. SOLUTION: The dielectric porcelain composition has a composition represented by the composition formula (by molar ratio) yLn[Al1-x.(Mg2/3 Ta1/3)x]aO(3+3a)/2-(1-y)MTibO1+2b and has a perovskite type crystal phase as the principal crystal phase. In the formula, Ln is a rare earth element, M is Ca and/or Sr, 0.900<=a<=1.050, 0.950<=b<=1.050 and (x) and (y) are in the range of a polygon drawn by connecting points A (x=0.550, y=0.400), B (x=0.600, y=0.450), C (x=0.900, y=0.450), D (x=0.900, y=0.300), E (x=0.650, y=0.300) and F (x=0.550, y=0.360) in the diagram.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a dielectric ceramic composition for high frequencies, and a dielectric resonator, a dielectric filter, a dielectric duplexer and a communication device using the same.

[0002]

2. Description of the Related Art For example, a dielectric resonator or a dielectric filter mounted on an electronic device used in a high frequency region such as a microwave or a millimeter wave, such as a cellular phone, a personal radio, and a satellite broadcast receiver. Dielectric porcelain is widely used as a material for circuit boards.

[0003] The dielectric properties required of such high-frequency dielectric porcelain are: (1) Since the wavelength of an electromagnetic wave is reduced to 1 / (ε _r ) ^1/2 in a dielectric, there is a demand for miniaturization. (2) the dielectric loss is small, that is, the Q value is high, and (3) the temperature stability of the resonance frequency is excellent, that is, the temperature coefficient of the resonance frequency (ε _r ) τf) is around 0 (ppm / ° C.).

Conventionally, as this kind of dielectric porcelain composition, for example, Ba (Zn, Ta) O ₃ (Japanese Patent Publication No. 58-58)
-25068), Ba (Sn, Mg, Ta)
O ₃ series (see Japanese Patent Publication No. 3-34164), (Zr,
Sn) TiO ₄ system (see Japanese Patent Publication No. Hei 4-9267);
Ba ₂ Ti ₉ O ₂₀ (see JP-A-61-10806)
Such dielectric ceramic compositions are known.

[0005]

SUMMARY OF THE INVENTION However, Ba
(Zn, Ta) O ₃ or Ba (Sn, Mg, Ta) O ₃ material has a Q value of 150,000 to 300,000 (1 GHz).
z), but the relative permittivity (ε _r ) is 2
It is relatively small, 4 to 30.

On the other hand, (Zr, Sn) TiO ₄ and Ba ₂ T
The i ₉ O ₂₀ material has a relatively large relative dielectric constant (ε _r ) of 37 to 40 and a Q value of 50,000 to 60,000 (1 GHz).
), But it is difficult to realize a relatively large relative dielectric constant (ε _r ), for example, exceeding 40.

[0007] In recent years, there has been an increasing demand for lower loss and smaller size of electronic equipment, and with this, with regard to dielectric materials, more excellent dielectric properties, in particular, high relative permittivity (ε _r ) and high Q value There is an increasing demand for the development of materials that combine the above, but at present it has not been possible to adequately meet such demands.

Therefore, an object of the present invention is to provide a relatively large dielectric constant (ε _r ) of 35 to 50 and a Q value of 2000.
It is an object of the present invention to provide a high-frequency dielectric ceramic composition which is as large as 0 (at 1 GHz) or more and can control the temperature coefficient (τf) of the resonance frequency arbitrarily around 0 (ppm / ° C.). Another object of the present invention is to provide a dielectric resonator, a dielectric filter, a dielectric duplexer, and a communication device using the same.

[0009]

In order to achieve the above object, the high frequency dielectric ceramic composition of the present invention comprises a rare earth element (Ln), Al, Mg, Ta, Ti and M (M: Ca).
And at least one of Sr), and a compositional formula based on a molar ratio: yLn @ Al1 _-x. (Mg2 _/ 3Ta)
_{1/3) x} a O (3} + 3a) / 2 - ( having a composition represented by _{1-y) MTi b O 1} + 2b, a and b are, 0.900 ≦ a ≦
1.050, 0.950 ≦ b ≦ 1.050, and x and y are points A (x = 0.550, y = 0.50) in the xy orthogonal coordinate diagram shown in FIG. 400), point B (x = 0.600, y = 0.450), point C (x =
0.900, y = 0.450), point D (x = 0.90)
0, y = 0.300) Point E (x = 0.650, y = 0.50)
300) and on or within a polygonal line connecting point F (x = 0.550, y = 0.360), characterized in that the perovskite-type crystal phase is the main crystal.

[0010] When x and y are 0.600 ≦
x ≦ 0.900 and 0.330 ≦ y ≦ 0.420.

Further, the high frequency dielectric ceramic composition of the present invention contains a rare earth element (Ln), Al, Mg, Ta, Ti and M (M: at least one of Ca and Sr), and has a molar ratio Composition formula by: zLn @ Al _1-x. (Mg _{(3 + y) / 6
Ti (1-y) / 2} Ta y / 3) x} a O (3 + 3a) / 2 - (1-z) MT
i _b O has a composition represented by _{1 + 2b, a, b,} x, y and z, 0.900 ≦ a ≦ 1.050,0.950 ≦
b ≦ 1.050, 0.650 ≦ x ≦ 0.950, 0.7
It is within the range of 00 ≦ y <1.000 and 0.325 ≦ z ≦ 0.500, and is characterized by using a perovskite-type crystal phase as a main crystal.

The rare earth element (Ln) is Y,
It is characterized by being at least one of La, Nd and Sm.

The rare earth element (Ln) is at least one of La and Sm.

In the dielectric resonator according to the present invention, the dielectric porcelain operates by electromagnetically coupling the input and output terminals to the input / output terminals. It is characterized by consisting of things.

Further, a dielectric filter according to the present invention is characterized in that the above-mentioned dielectric resonator includes external coupling means.

Further, the dielectric duplexer of the present invention comprises at least two dielectric filters, input / output connecting means connected to each of the dielectric filters, and antenna connecting means commonly connected to the dielectric filters. And a dielectric duplexer, wherein at least one of the dielectric filters is the above-described dielectric filter.

Further, according to the communication apparatus of the present invention, there is provided the above-described dielectric duplexer, a transmission circuit connected to at least one input / output connection means of the dielectric duplexer, and a transmission circuit connected to the transmission circuit. It is characterized by comprising a receiving circuit connected to at least one input / output connecting means different from the writing output connecting means, and an antenna connected to an antenna connecting means of the dielectric duplexer.

[0018]

FIG. 2 is a sectional view schematically showing a basic structure of a dielectric resonator 1 according to one embodiment of the present invention.

Referring to FIG. 2, dielectric resonator 1 includes a metal case 2, and a support base 3 is provided in a space in metal case 2.
A pillar-shaped dielectric porcelain 4 supported by the above is arranged. The input terminal 5 and the output terminal 6 are held by the metal case 2 in a state where the input terminal 5 and the output terminal 6 are insulated from the metal case 2.

The dielectric porcelain 4 operates by being electromagnetically coupled to the input terminal 5 and the output terminal 6. Only a signal of a predetermined frequency input from the input terminal 5 is output from the output terminal 6.

The dielectric porcelain 4 provided in such a dielectric resonator 1 is composed of the high frequency dielectric porcelain composition according to the present invention.

FIG. 2 shows a TE01δ mode dielectric resonator, but the high frequency dielectric ceramic composition of the present invention can be applied to other TE mode, TM mode, and TEM mode dielectric resonators. It can be used similarly.

FIG. 3 is a block diagram showing an example of the communication device of the present invention. The communication device 10 includes a dielectric duplexer 12, a transmission circuit 14, a reception circuit 16, and an antenna 18. The transmitting circuit 14 is connected to the input means 20 of the dielectric duplexer 12, and the receiving circuit 16 is connected to the output means 22 of the dielectric duplexer 12. Further, the antenna 18 is connected to the antenna connection means 24 of the dielectric duplexer 12. The dielectric duplexer 12 includes two dielectric filters 26 and 28. The dielectric filters 26 and 28 are obtained by connecting external coupling means to the dielectric resonator according to the present invention. In this embodiment, for example, it is formed by connecting the external coupling means 30 to the input / output terminals of the dielectric resonator 1, respectively. One dielectric filter 26 is connected between the input means 20 and the antenna connection means 24, and the other dielectric filter 2
8 is connected between the antenna connecting means 24 and the output means 22.

As described above, the dielectric ceramic composition for high frequency according to the present invention comprises a rare earth element (Ln), Al, M
g, Ta, Ti and M (M: at least one of Ca and Sr), and a composition formula by molar ratio: yLn
｛Al _1-x · (Mg _2/3 Ta _1/3 ) _x ｝ _a O _{(3 + 3a) / 2} − (1
-Y) MTi _b O has a composition represented by _{1 + 2b,} a,
Each of b, x, and y is within the following range.

First, for a, 0.900 ≦ a ≦
It is in the range of 1.050. If a <0.900,
When a> 1.050, the Q value becomes low, and the object of the present invention cannot be achieved.

For b, 0.950 ≦ b ≦ 1.05
It is in the range of 0. b <0.950 or b> 1.050
This is because in the case of (1), the Q value becomes low.

As for x and y, points A, B, C, D, and D in the xy orthogonal coordinate diagram shown in FIG.
It is on or inside a polygonal line connecting E and F. Points A, F
Is outside the polygon (outside the polygon), the sintering temperature exceeds 1500 and becomes as high as 1600 ° C., which is inconvenient for industrial mass production. Points A, B, C
Is outside the polygon (outside the polygon), the temperature coefficient (τf) of the resonance frequency is shifted to the minus side from −50 ppm / ° C. This is because the temperature coefficient (τf) of the resonance frequency becomes larger than +30 ppm / ° C. in the case of the outside of the line connecting the points D, E, and F (outside the polygon). In the case outside the points C and D (outside the polygon),
This is because the effect of containing Al decreases and the Q value decreases.

Further, x and y are more preferably 0.600 ≦ x ≦ 0.900, 0.330 ≦ y ≦
A range of 0.420 is preferred. The characteristic that the temperature coefficient (τf) of the resonance frequency is 0 ± 30 ppm / ° C. can be obtained.

In another aspect, the dielectric ceramic composition for a high frequency according to the present invention comprises a rare earth element (L
n), containing Al, Mg, Ta, Ti, and M (M: at least one of Ca and Sr), and a composition formula by a molar ratio: zLn ｛Al _1-x. (Mg _{(3 + y) / 6} Ti _{(1-y) / 2
Ta y / 3) x} a} O (3 + 3a) / 2 - ( having a composition represented by _{1-z) MTi b O 1} + 2b, a, b, x, for each of the y and z, It is in the following range.

First, for a, 0.900 ≦ a ≦
It is in the range of 1.050. If a <0.900,
When a> 1.050, the Q value becomes low, and the object of the present invention cannot be achieved.

For b, 0.950 ≦ b ≦ 1.05
It is in the range of 0. b <0.950 or b> 1.050
This is because in the case of (1), the Q value becomes low.

For x, 0.650 ≦ x ≦
It is in the range of 0.950. When x <0.650, the sintering temperature exceeds 1500 and becomes as high as 1600 ° C., which is inconvenient for industrial mass production. x
When it is> 0.950, the effect of containing Al becomes small and the Q value becomes low.

As for y, 0.700 ≦ y <1.00
It is in the range of 0. When y <0.700, the sintering temperature becomes 1500 to 1600 ° C., which is inconvenient for industrial mass production. On the other hand, when y = 1.000, the temperature coefficient of the resonance frequency (τ
This is because the effect of shifting f) cannot be expected.

For z, 0.325 ≦ z ≦
It is in the range of 0.500. When z <0.325, the temperature coefficient of resonance frequency (τf) is +30 ppm / ° C.
If z> 0.500, then
This is because the temperature coefficient (τf) of the resonance frequency shifts to a minus side from −50 ppm / ° C.

In the high frequency dielectric ceramic composition according to the present invention, the rare earth element (Ln) may be Y, L
Although it is preferable to use a, Nd, Sm, etc., it is more preferable to use La, Sm among them. L
This is because by using a and Sm, the Q value can be made higher than in other cases.

In the high dielectric ceramic composition according to the present invention, a small amount of an additive may be added as long as the object of the present invention is not impaired. For example, SiO ₂ , MnC
O ₃ , B ₂ O ₃ , NiO, CuO, Li ₂ CO _3, etc.
When added in an amount of from 0.01 to 1.0% by weight, the firing temperature is from 20 to 3%.
Although the temperature is lowered by 0 ° C., the characteristics do not deteriorate significantly. Also, Nb
By adding 1 to 3% by weight of ₂ O ₅ , Sb ₂ O ₃ , V ₂ O ₅ , WO _3, etc., it is possible to finely adjust the relative dielectric constant and the temperature characteristics, and obtain an excellent dielectric ceramic. it can.

[0037]

Next, the present invention will be described based on more specific examples.

(Example 1) As starting materials, high-purity rare earth oxides (such as La ₂ O ₃ ), magnesium oxide (Mg
O), tantalum oxide (Ta ₂ O ₅ ), aluminum oxide (Al ₂ O ₃ ), calcium carbonate (CaCO ₃ ), strontium carbonate (SrCO ₃ ), and titanium oxide (TiO ₂ ).

Next, the composition formula shown in Table 1 is: yLa @ Al
_{1-x · (Mg 2/3 Ta} 1/3) x} a O (3 + 3a) - (1-y) M
These raw materials were prepared so as to obtain a composition represented by Ti _b O _{1 + 2b} (where y is a molar ratio). The composition formula shown in Table 2 is: yLn @ Al _1-x. (Mg _2/3 T
_{a 1/3) x} a O (} 3 + 3a) - (1-y) MTi b O 1 + 2b ( although, y is as composition represented by molar ratio) was obtained by compounding these raw materials .

[0040]

[Table 1]

[0041]

[Table 2]

Samples 57 to 74 shown in Table 2 were obtained by replacing "La" in the composition formula in Table 1 with "rare earth elements" in Table 2.
Are the various rare earth elements shown in the column
Samples 68 to 68 have compositions corresponding to sample 27 in Table 1, and samples 69 to 74 have compositions corresponding to sample 46 in Table 1.

Next, the powders of the prepared raw materials are wet-mixed using a ball mill for 16 hours, dehydrated and dried, and then calcined at 1100 to 1300 ° C. for 3 hours. A binder was added, and wet grinding was performed again using a ball mill for 16 hours to obtain a prepared powder.

Next, the prepared powder was mixed with 1000 to 2000
After press-molding into a disk at a pressure of kg / cm ² , 14
It was fired in the air at a temperature of 00 to 1500 ° C. for 4 to 10 hours to obtain a sintered body having a diameter of 10 mm and a thickness of 5 mm.

The obtained sintered body was measured at a frequency of 6 to
The relative dielectric constant (ε _r ) and Q value at 8 GHz were measured by a double-ended short-circuit type dielectric resonator method, and converted to a 1 GHz Q value according to a constant rule of Q × f = constant. Also, TE [01δ]
From the mode resonator frequency, the resonance frequency of 25 ° C to 55 ° C
The temperature coefficient (τf) between them was measured. The results are shown in Tables 1 and 2. In Table 1, samples with an asterisk (*) are out of the scope of the present invention.

As is clear from Tables 1 and 2, according to the sample within the range of the present invention, a high Q value can be obtained while keeping the relative permittivity large in the microwave band.

Here, referring mainly to Table 1, the composition formula of the present invention: yLn @ Al _1-x. (Mg _2/3 T
_{a 1/3) x} a O (} 3 + 3a) / 2 - (1-y) MTi b O 1 + 2b ( although, Ln is a rare earth element, M is represented by at least one) of Ca and Sr The reasons for limiting the composition to be used are described below.

First, for a, 0.900 ≦ a ≦ 1.
The reason why the Q value was limited to 050 was that samples a and 42 had a low Q value when a <0.900, and samples 18 and 50 when a> 1.050. This is because the object of the present invention cannot be achieved.

For b, 0.950 ≦ b ≦ 1.050
Is limited when b <0.950, the sample 12
This is because the Q value is low as in Samples 16 and 48, and when b> 1.050 as in Samples 16 and 48.

In the xy orthogonal coordinate diagram shown in FIG. 1, x and y are defined as the inside of the line connecting the points A and F (the polygon including the line AB). In the case of the outside, the sintering temperature exceeds 1500 ° C. and rises to about 1600 ° C. as in samples 1 to 3, 40, 41 and 52, which is inconvenient for industrial mass production. .

The inside of the line segment ABC connecting the points A, B, and C (within the polygon including the line segment ABC) is outside the line segment ABC. This is because the coefficient (τf) shifts to the minus side from −50 ppm / ° C.

The inside of the line segment DEF connecting the points D, E and F (within the polygon including the line segment DEF) is outside the line segment DEF. Is larger than +30 ppm / ° C.

The inside of the line segment CD connecting the points C and D (the line segment CD
Is included in the polygon) when it is outside,
Is small, and the Q value is low.
For example, it can be seen by comparing Samples 39, 8, 26, and 32, which exhibit temperature coefficients (τf) at substantially the same resonance frequency.

For x and y, 0.600 ≦
By setting x ≦ 0.900 and 0.330 ≦ y ≦ 0.420, the temperature coefficient (τf) of the resonance frequency becomes 0 ± 30p.
pm / ° C. can be obtained, which is more preferable.

Further, the sample 27 in Table 1 and the samples 57 to 57 in Table 2
68, and sample 46 in Table 1 and sample 69 in Table 2
-74, it is more preferable to use Y or Sm as the rare earth element.
By using Sm, the Q value can be further increased.

Example 2 As starting materials, high-purity rare earth oxides (such as La ₂ O ₃ ), magnesium oxide (Mg
O), tantalum oxide (Ta ₂ O ₅ ), aluminum oxide (Al ₂ O ₃ ), calcium carbonate (CaCO ₃ ), strontium carbonate (SrCO ₃ ), and titanium oxide (TiO ₂ ).

Next, a composition formula shown in Table 3: zLaＬAl
_1-x・ (Mg _{(3 + y) / 6} Ti _{(1-y) / 2} Tay _{/ 3} ) _x ｝ _a O
_{(3 + 3a) / 2 -} (1-z) MTi b O 1 + 2b ( although, z is molar ratio) as the composition represented by is obtained by compounding these materials. Further, a composition formula shown in Table 4: zLn ｛A
l _1-x · (Mg _{(3 + y) / 6} Ti _{(1-y) / 2} Ta _{y / 3} ) _x ｝ _a O
_{(3 + 3a) / 2 -} (1-z) MTi b O 1 + 2b ( although, z is molar ratio) as the composition represented by is obtained by compounding these materials.

[0058]

[Table 3]

[0059]

[Table 4]

The samples 115 to 132 shown in Table 4 were used.
Are various rare earth elements shown in the column of “rare earth elements” in Table 3 in place of La in the composition formula in Table 3. Samples 115 to 126 correspond to sample 90 in Table 3. Samples 127 to 132 have compositions corresponding to Sample 110 in Table 3.

Next, using these prepared raw material powders,
Otherwise, in the same manner as in Example 1, 1400 to 1500 ° C.
To obtain a sintered body. Thereafter, in the same manner as in Example 1, the relative dielectric constant (ε _r ), the Q value, and the temperature coefficient (τf) of the resonance frequency were obtained. The results are shown in Tables 3 and 4. In Table 3, the samples marked with an asterisk (*) are out of the scope of the present invention.

As is clear from Tables 3 and 4, according to the sample within the range of the present invention, a high Q value can be obtained while keeping the relative dielectric constant at a large value in the microwave band.

Here, referring mainly to Table 3, the composition formula of the present invention: zLn @ Al _1-x. (Mg _{(3 + y) / 6} Ti
_{(1-y) / 2 Ta} y / 3) x} a O (3 + 3a) / 2 - (1-z) MTi b
O _{1 + 2b} (where Ln is a rare earth element, M is Ca and S
The reasons for limiting the composition represented by at least one of n) will be described below.

First, for a, 0.900 ≦ a ≦ 1.
The reason why the Q value was limited to 050 was that samples a and q were low when a <0.900, and samples 94 and 114 when a> 1.050. This is because the object of the present invention cannot be achieved.

For b, 0.950 ≦ b ≦ 1.050
Is limited to the sample 88 when b <0.950.
This is because the Q value is low as in Samples 92 and 112, and when b> 1.050, as in Samples 92 and 112.

For x, 0.650 ≦ x ≦ 0.950
The reason is that when x <0.650, the sample 75
Sintering temperatures above 1500 and 16
This is because the temperature becomes as high as about 00 ° C., which is inconvenient for industrial mass production. On the other hand, when x> 0.950,
This is because the effect of containing Al becomes small and the Q value becomes low, as is apparent when comparing the sample 105 with 80 and 90.

For y, 0.700 ≦ y <1.000
The reason is that when y <0.700, the sample 77
As described above, the sintering temperature exceeds 1500 and becomes as high as 1600 ° C., which is inconvenient for industrial mass production. On the other hand, when y = 1.000, samples 99 to 1
As apparent from FIG. 01, the effect of increasing the relative dielectric constant (ε _r ) and shifting the temperature coefficient (τf) of the resonance frequency to the positive side without lowering the Q value cannot be expected.

For z, 0.325 ≦ z ≦ 0.500
The reason is that when z <0.325, the temperature coefficient (τf) of the resonance frequency is +30 ppm / ° C. as in Sample 78.
If z> 0.500, then
The temperature coefficient (τf) of the resonance frequency is
This is because it is shifted to the minus side from −50 ppm / ° C.

The sample 90 in Table 3 and the sample 115 in Table 4
As is clear from the comparison of Sample Nos. 126 to 126 and the comparison between Sample 110 of Table 3 and Samples 127 to 132 of Table 4, it is more preferable to use Y and Sm as the rare earth element, and to use La and Sm as described above. Thereby, the Q value can be further increased.

[0070]

As is apparent from the above description, according to the present invention, the relative dielectric constant (ε _r ) is as large as 35 to 50, the Q value is as large as 20,000 or more, and the temperature coefficient of the resonance frequency ( It is possible to obtain a high-frequency dielectric ceramic composition in which τf) can be arbitrarily controlled around 0 (ppm / ° C.).

Therefore, by forming a dielectric resonator, a dielectric filter, a dielectric duplexer, and a communication device using the dielectric ceramic having such a composition, good characteristics can be obtained. .

[Brief description of the drawings]

FIG. 1 is an xy orthogonal coordinate diagram for specifying parameters x and y of a composition formula representing a composition of the present invention.

FIG. 2 is a cross-sectional view schematically illustrating a dielectric resonator according to an embodiment of the present invention.

FIG. 3 is a block diagram showing an example of a communication device of the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 dielectric resonator 2 metal case 4 dielectric porcelain 5 input terminal 6 output terminal 10 communication device 12 dielectric duplexer 14 transmission circuit 16 reception circuit 18 antenna 20 input means 22 output means 24 antenna connection means 26, 28 dielectric filter 30 External coupling means

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) H01B 3/12 312 H01B 3/12 312 H01G 4/12 310 H01G 4/12 310 H01P 1/20 H01P 1/20 A 7 / 10 7/10 F term (reference) 4G031 AA03 AA04 AA05 AA08 AA09 AA11 AA15 AA29 BA09 5E001 AA01 AE00 AJ02 5G303 AA02 AA10 AB06 AB08 AB11 BA12 CA01 CB01 CB06 CB15 CB17 CB22 CB32 HC13 HC35 HC31 HC35

Claims (9)

[Claims] 1. A rare earth element (Ln), Al, Mg, T
a, containing Ti and M (M: at least one of Ca and Sr); compositional formula by molar ratio: yLnＬAl _1-x. (Mg _2/3 Ta
_{1/3) x} a O (3} + 3a) / 2 - (1-y) MTi b O 1 + 2b has a composition represented by, a and b are, 0.900 ≦ a ≦ 1.050 0 .950 ≦ b ≦ 1.050, and x and y are points A (x = 0.550, y = 0.400) and point B ( x = 0.600, y = 0.450) Point C (x = 0.900, y = 0.450) Point D (x = 0.900, y = 0.300) Point E (x = 0.650) , Y = 0.300) on a polygonal line connecting points F (x = 0.550, y = 0.360) or inside thereof, characterized by having a perovskite-type crystal phase as a main crystal, Dielectric porcelain composition. 2. The high-frequency dielectric according to claim 1, wherein the x and y are in the range of 0.600 ≦ x ≦ 0.900 0.330 ≦ y ≦ 0.420. Porcelain composition. 3. Rare earth elements (Ln), Al, Mg, T
a, containing Ti and M (M: at least one of Ca and Sr); compositional formula by molar ratio: zLn @ Al1 _-x. (Mg _{(3 + y) / 6
Ti (1-y) / 2} Ta y / 3) x} a O (3 + 3a) / 2 - (1-z) MT
i _b O _{1 + 2b} has a composition represented by, a, b, x, y and z, 0.900 ≦ a ≦ 1.050 0.950 ≦ b ≦ 1.050 0.650 ≦ x ≦ 0 .950 0.700 ≦ y <1.000 0.325 ≦ z ≦ 0.500, wherein the perovskite-type crystal phase is a main crystal, and is a dielectric ceramic composition for high frequencies. 4. The rare earth element (Ln) is Y, La,
The dielectric ceramic composition for high frequencies according to any one of claims 1 to 3, wherein the composition is at least one of Nd and Sm. 5. The rare earth element (Ln) is at least one of La and Sm.
The high frequency dielectric ceramic composition according to any one of claims 1 to 3. 6. A high frequency dielectric ceramic composition according to claim 1, wherein said dielectric ceramic operates by being electromagnetically coupled to an input / output terminal. A dielectric resonator, comprising a material. 7. A dielectric filter comprising the dielectric resonator according to claim 6 and external coupling means. 8. A dielectric duplexer comprising at least two dielectric filters, input / output connection means connected to each of the dielectric filters, and antenna joining means commonly connected to the dielectric filters. A dielectric duplexer, wherein at least one of the dielectric filters is the dielectric filter according to claim 7. 9. The dielectric duplexer according to claim 8, a transmission circuit connected to at least one input / output connection means of the dielectric duplexer, and the input / output connection means connected to the transmission circuit. A communication device, comprising: a receiving circuit connected to at least one input / output connection unit different from the above; and an antenna connected to an antenna connection unit of the dielectric duplexer.