JPH03293747A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To eliminate not only breaking, chipping off, etc., from split end faces, but also the need of such a process as glass plate re-affixing, etc., by simultaneously forming via holes and splitting grooves by a dry etching method. CONSTITUTION:After a semiconductor substrate 1 mounted with semiconductor elements on its surface is stuck to a glass plate 2 with a bonding agent 3 and a photoresist 6 is applied to the entire rear surface of the substrate 1, patterning for forming via holes 4 and patterning for forming splitting grooves 7 are simultaneously performed. Then the holes 4 and grooves 7 are simultaneously formed by performing dry etching on the substrate 1. After the grooves 7 are filled with a photoresist, polyimide, insulating films, etc., a PHS(Plated Heat Sink) is formed and the substrate 1 is divided into chips by removing the bonding agent 3 and the materials filling the grooves 7. Therefore, split end faces can be prevented from breaking, chipping off, etc., and, at the same time, the need of such a process as re-affixing the glass plate can be eliminated.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly relates to a method for manufacturing a semiconductor device.
) 1o1e relates to a chip dividing method for a semiconductor device.

(Prior Art) FIGS. 3 and 4 are cross-sectional views showing a conventional chip dividing method for a semiconductor device having a V:a-Hole. In the figures, 1 indicates a semiconductor substrate on which a semiconductor element is formed; 2
3 is a glass plate, 3 is an adhesive for bonding semiconductor substrate 1 and glass plate 2, and 4 is a Via-H that penetrates semiconductor substrate 1.
ole, 5 is PHS (PlatedHeat 5i
nk).

Next, a chip dividing method will be explained. First, Figure 3 (A
), a semiconductor substrate 1 formed on the surface of a semiconductor element is bonded to a glass plate 2 via an adhesive 3. At this time, the surface of the semiconductor substrate 1 is the side to be bonded. Here, the adhesive 3 consists of a photoresist that protects the semiconductor elements formed on the surface of the semiconductor substrate 1 and wax that is attached to the glass plate 2.

Next, as shown in FIG. 3(B), Vi is applied to a desired location on the semiconductor substrate 1 using photolithography and wet etching technology.
An a-Hole is formed. Via-hole formation by wet etching is isotropic etching, so it is often site etching, and as shown in the figure, the opening size is different on the front side and the back side.

Next, as shown in Figure 3 (C), the pH is 5% by plating technology.
5 is formed and PH55 is passed through Via-tole4.
is connected to the electrode of the semiconductor element on the surface of the semiconductor substrate 1.

Subsequently, as shown in FIG. 3(D), the semiconductor substrate 1 is wet-etched using PH55 as a mask to divide it into individual semiconductor devices (chips).

Also at this time, due to wet etching, there is a lot of side etching and the etching progresses to the inside of PH55. Thereafter, by removing the adhesive 3, the chip division is completed as shown in FIG. 3(E).

In addition, Fig. 4 shows another conventional chip division method, and Fig. 3 (
After completing the same steps up to C), the adhesive 3 is removed and the semiconductor substrate 1 is attached to the glass plate 2 again with the surface exposed, as shown in FIG. 4(A).

Next, as shown in FIG. 4(B), the semiconductor substrate 1 is cut at a desired location with a diamond cutter, and the chips are divided by a scribing method in which the semiconductor substrate 1 is divided using the cleavage property of the crystal, or a dicing method in which the semiconductor substrate 1 is cut and divided by cutting with a rotating plate. do.

By removing the adhesive 3, individually divided semiconductor devices can be obtained as shown in FIG. 4(C).

[Problem to be solved by the invention]

Conventional chip dividing methods for semiconductor devices are configured as described above, but when dividing by wet etching, there is a problem that the uniformity and reproducibility of etching is not good.
In addition, in the case of the scribing method, there are problems such as the step of replacing the glass plate, and if the number of cuts into the semiconductor substrate is small, the cleavage cannot be done well, resulting in chipping of the dividing end face, or the inability to divide the semiconductor substrate at all. The dicing method also involves a re-adhesive process, and there is a problem in that when cutting the substrate with a rotating blade, the cut end surface is chipped (chipping).

This invention was made to solve the above-mentioned problems, and it has good division uniformity and reproducibility, prevents chipping and chipping of the divided end faces, and eliminates steps such as replacing glass plates. The purpose of this study is to obtain a chip dividing method that is possible.

[Means to solve the problem]

The method for manufacturing a semiconductor device according to the present invention includes
When the le is formed by a dry etching method, dividing grooves are formed at the same time.

[Effect]

In the semiconductor device manufacturing method of the present invention, the dividing grooves are formed by the tri-etching method, which improves uniformity and reproducibility, and also prevents chipping or chipping from occurring on the dividing end surface, unlike scribing or dicing. In addition, steps such as replacing the glass plate in the scribing method can also be eliminated.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings. 1st
In the figure, numerals 1 to 5 are the same as those of the conventional device. In the figure, 6 is a photoresist, 7 is a semiconductor substrate 1
This is a dividing groove formed in the .

Next, a chip dividing method will be explained.

In FIG. 1(A), a semiconductor substrate 1 formed on the surface of a semiconductor element is bonded to a glass plate 2 via an adhesive 3,
After coating the entire back surface of the semiconductor substrate 1 with photoresist 6, formation-nicking for forming Via-Hole 4 is performed, and at the same time, butter-nicking for forming dividing groove 7 is performed.

Next, in FIG. 1B, the semiconductor substrate 1 is etched by a tri-etching method (reactive ion etching, RIE, etc.) to form the via-hole 4 and the dividing groove 7 at the same time. Here, since the dry etching method is used to form the dividing grooves 7, the uniformity and reproducibility of etching is improved. Furthermore, the problems of chipping and chipping of the divided end faces, which are caused by the scribing method and the dicing method, are also eliminated.

Next, the dividing groove 7 is formed using photoresist, polyimide, or an insulating film (SiO, SiN) so as not to affect the subsequent process.
After embedding, PH35 is formed as shown in Fig. 1(C), and the adhesive 3 and the material embedded in the dividing groove 7 are removed and divided into each chip as shown in Fig. 1(D). be done.

Note that in the above embodiment, Via-H is connected from the back side of the semiconductor substrate 1.
Although the case where the ole 4 and the dividing groove 7 are formed has been described, they may be formed from the surface of the semiconductor substrate 1 as shown in FIG.

Below, FIG. 2 will be explained. Reference numerals 1 to 7 are the same as in the above embodiment. In the figure, 8 is a surface electrode.

Next, a chip dividing method will be explained. In FIG. 2(A), a photoresist 6 is applied to the semiconductor substrate 1,
Patterning for forming the via-hole 4 and forming agent groove 7 is performed. Next, in FIG. 2(B), the semiconductor substrate 1 is etched to a desired depth using a dry etching method to form the via-hole 4 and the dividing groove 7 at the same time.

Next, as shown in FIG. 2(C), the dividing groove 7 is buried and a surface electrode 8 is formed in the via-hole 4. Thereafter, the semiconductor substrate 1 is attached to the glass plate 2 via the adhesive 3, and the back surface of the semiconductor substrate 1 is ground to expose the via-hole 4 and the dividing groove 7 as shown in FIG. 2(D).

Thereafter, a PH 35 is formed as shown in FIG. 2(E), and the adhesive 3 is removed to divide into chips as shown in FIG. 2(F).

〔Effect of the invention〕

As described above, according to the present invention, since the dividing groove is formed at the same time as the via-hole is formed by the dry etching method, the uniformity and reproducibility of etching are improved, and chipping and chipping of the divided end face can be prevented. In addition, steps such as replacing the glass plate with the conventional scribing method can be eliminated, and the process can be shortened.

[Brief explanation of the drawing]

FIG. 1 is a process sectional view showing a method for manufacturing a semiconductor device according to an embodiment of the present invention, FIG. 2 is a process sectional view showing another embodiment of the invention, and FIGS. FIG. 3 is a process cross-sectional view showing a method for manufacturing the device. In the figure, 1 is a semiconductor substrate, 2 is a glass plate, 3 is an adhesive, 4 is a via-hole, 5 is a PH3, 6 is a photoresist, 7 is a dividing groove, and 8 is a surface electrode. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

[Claims] 1. A method of manufacturing a semiconductor device, characterized in that, in chip dividing a semiconductor device having a via-hole, a groove for chip division is formed at the same time as the via-hole is formed.