JPH0328815B2 - - Google Patents

Info

Publication number
JPH0328815B2
JPH0328815B2 JP56209240A JP20924081A JPH0328815B2 JP H0328815 B2 JPH0328815 B2 JP H0328815B2 JP 56209240 A JP56209240 A JP 56209240A JP 20924081 A JP20924081 A JP 20924081A JP H0328815 B2 JPH0328815 B2 JP H0328815B2
Authority
JP
Japan
Prior art keywords
gas
mass flow
flow rate
reaction
air valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56209240A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58111314A (ja
Inventor
Tamotsu Sasaki
Yukio Misonoo
Yoshiaki Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20924081A priority Critical patent/JPS58111314A/ja
Publication of JPS58111314A publication Critical patent/JPS58111314A/ja
Publication of JPH0328815B2 publication Critical patent/JPH0328815B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Pipeline Systems (AREA)
  • Flow Control (AREA)
JP20924081A 1981-12-25 1981-12-25 ガス流量制御方法 Granted JPS58111314A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20924081A JPS58111314A (ja) 1981-12-25 1981-12-25 ガス流量制御方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20924081A JPS58111314A (ja) 1981-12-25 1981-12-25 ガス流量制御方法

Publications (2)

Publication Number Publication Date
JPS58111314A JPS58111314A (ja) 1983-07-02
JPH0328815B2 true JPH0328815B2 (enrdf_load_stackoverflow) 1991-04-22

Family

ID=16569675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20924081A Granted JPS58111314A (ja) 1981-12-25 1981-12-25 ガス流量制御方法

Country Status (1)

Country Link
JP (1) JPS58111314A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0240440U (enrdf_load_stackoverflow) * 1988-09-08 1990-03-19
JP2906624B2 (ja) * 1990-09-27 1999-06-21 株式会社島津製作所 薄膜形成装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54144867A (en) * 1978-05-04 1979-11-12 Hitachi Ltd Gas phase growth method of semiconductor

Also Published As

Publication number Publication date
JPS58111314A (ja) 1983-07-02

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