JPH03283535A - Wet washing apparatus - Google Patents

Wet washing apparatus

Info

Publication number
JPH03283535A
JPH03283535A JP8323890A JP8323890A JPH03283535A JP H03283535 A JPH03283535 A JP H03283535A JP 8323890 A JP8323890 A JP 8323890A JP 8323890 A JP8323890 A JP 8323890A JP H03283535 A JPH03283535 A JP H03283535A
Authority
JP
Japan
Prior art keywords
liquid
washing
cleaning
immersing
spray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8323890A
Other languages
Japanese (ja)
Other versions
JP2963947B2 (en
Inventor
Masamori Ozawa
小沢 正盛
Kazuo Fushiki
布志木 和雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2083238A priority Critical patent/JP2963947B2/en
Publication of JPH03283535A publication Critical patent/JPH03283535A/en
Application granted granted Critical
Publication of JP2963947B2 publication Critical patent/JP2963947B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To execute effective washing by comprising an immersing type washing mechanism having an immersing tank for reserving liquid to immerse washing objects and an ultrasonic generating means to give ultrasonic vibration to the liquid in this immersing tank and a spray washing mechanism for spraying the liquid to such washing objects. CONSTITUTION:An water cassette 5 is first housed within a spray chamber 4 and a liquid for washing, for example, sulfuric acid solution is sprayed while rotating the wafer cassette 5. Thereafter, the valve mechanisms 9a, 9b are switched and another liquid for washing, for example, ammonia + chloric acid solution is sprayed while rotating the wafer cassette 5. Then, the wafer cassette 5 is taken out from the spray chamber 4 and is immersed into an immersing tank 12. In this case, the predetermined liquid, for example, ammonia solution is stored previously in the immersing tank 12. Under the condition that the wafer cassette 5 and a semiconductor wafer 6 are immersed into the liquid in the immersing take 12, ultrasonic vibration is transferred to the liquid in the immersing tank 12 from an ultrasonic wave generating mechanism 13 to realize effective washing through the chemical washing effect of a washing solution and physical washing effect of ultrasonic wave.

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、ウェット洗浄装置に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a wet cleaning device.

(従来の技術) 従来から、各種物体に被着した被着物を除去する洗浄装
置としては、所定のガスを用いたドライ洗浄装置と、所
定の液体を用いたウェット洗浄装置が知られている。
(Prior Art) Conventionally, dry cleaning devices using a predetermined gas and wet cleaning devices using a predetermined liquid are known as cleaning devices for removing adherents from various objects.

このような洗浄装置のうち、半導体ウェハ等の基板の洗
浄に用いられる従来のウェット洗浄装置には、浸漬式(
デイツプ式)洗浄装置と、スプレィ式洗浄装置とがある
Among these cleaning devices, conventional wet cleaning devices used for cleaning substrates such as semiconductor wafers include immersion type (
There are two types of cleaning equipment: dip-type cleaning equipment and spray-type cleaning equipment.

上記浸漬式洗浄装置では、例えばアンモニア溶液、硫酸
溶液、フッ化水素酸溶液等の洗浄用の液体、例えば純水
等のリンス用の液体を貯留する複数の浸漬槽が水平方向
に並べて設けられている。
In the above-mentioned immersion type cleaning device, a plurality of immersion tanks are arranged horizontally and store cleaning liquids such as ammonia solution, sulfuric acid solution, and hydrofluoric acid solution, and rinsing liquids such as pure water. There is.

そして、搬送機構により、これらの浸漬槽に、ウェハカ
セット等に収容された複数枚の半導体ウェハを、ウェハ
カセットごと順次搬送して浸漬し洗浄を行う。なお、最
近では、上記浸漬槽内に貯留された液体に超音波振動を
与える超音波発生機構を備え、洗浄液の化学的洗浄効果
と、超音波の物理的洗浄効果を併用し、洗浄効果を高め
た浸漬式洗浄装置が多い。
Then, a plurality of semiconductor wafers housed in wafer cassettes or the like are sequentially transported and immersed in these wafer cassettes into these immersion tanks by the transport mechanism for cleaning. Recently, the immersion tank is equipped with an ultrasonic generating mechanism that applies ultrasonic vibrations to the liquid stored in the immersion tank, and uses both the chemical cleaning effect of the cleaning liquid and the physical cleaning effect of ultrasonic waves to enhance the cleaning effect. There are many types of immersion cleaning equipment.

一方、スプレィ式洗浄装置では、スプレィチャンバ内に
、上述したような洗浄用の液体およびすンス用の液体を
スプレィするためのノズルと、ウェハカセットを支持し
て回転させるための回転機構とが設けられている。そし
て、半導体ウェハをウェハカセットごとスプレィチャン
バ内に収容し、ウェハカセット(半導体ウェハ)を回転
させながら順次所定の液体をスプレィし、洗浄を行う。
On the other hand, in a spray-type cleaning device, a nozzle for spraying the cleaning liquid and rinsing liquid as described above and a rotation mechanism for supporting and rotating the wafer cassette are installed in the spray chamber. It is being Then, the semiconductor wafer is housed in a spray chamber together with the wafer cassette, and while the wafer cassette (semiconductor wafer) is rotated, a predetermined liquid is sequentially sprayed to perform cleaning.

(発明が解決しようとする課題) しかしながら、上述した従来のウェット洗浄装置では、
次のような問題がある。
(Problem to be solved by the invention) However, in the conventional wet cleaning device described above,
There are the following problems.

すなわち、浸漬式洗浄装置では、上述したように洗浄工
程数に応じた複数の浸漬槽を並べて配置する必要がある
。しかしながら、被着物には、有機物、金属、酸化物等
各種の物質があり、これらを効率良く除去するには、そ
れぞれの被着物に応じた洗浄用の液体を用いる必要があ
る。このため、洗浄工程数が増え、例えば5〜6の浸漬
槽を並べて配置した装置もある。このため、装置が大型
化し、スペースファクタが悪化(占有面積が増大)する
という問題がある。
That is, in the immersion type cleaning apparatus, as described above, it is necessary to arrange a plurality of immersion tanks in line according to the number of cleaning processes. However, deposits include various substances such as organic substances, metals, and oxides, and in order to efficiently remove these substances, it is necessary to use a cleaning liquid suitable for each deposit. For this reason, the number of cleaning steps increases, and some devices have, for example, 5 to 6 immersion tanks arranged side by side. Therefore, there is a problem in that the device becomes larger and the space factor worsens (occupied area increases).

また、スプレィ式洗浄装置では、1つのチャンバ内で、
複数種の洗浄用の液体あるいはリンス用の液体を供給す
ることができ、複数の洗浄工程を1つノチャンバ内で実
施することができるので、装置を小形化することができ
る。しかしながら、超音波振動を利用した有効な洗浄が
行えないという問題かある。
In addition, in spray cleaning equipment, within one chamber,
Since multiple types of cleaning liquids or rinsing liquids can be supplied and multiple cleaning processes can be performed within one chamber, the apparatus can be made smaller. However, there is a problem that effective cleaning using ultrasonic vibration cannot be performed.

本発明は、かかる従来の事情に対処してなされたもので
、超音波振動を利用した有効な洗浄を実施することがで
き、かつ、装置の大型化を抑制することにより、スペー
スファクターの向上を図ることのできるウェット洗浄装
置を提供しようとするものである。
The present invention has been made in response to such conventional circumstances, and enables effective cleaning using ultrasonic vibration, and also improves the space factor by suppressing the increase in size of the device. The purpose of this invention is to provide a wet cleaning device that can achieve the following goals.

[発明の構成] (課題を解決するための手段) すなわち本発明は、被洗浄物に複数種の液体を順次接触
させて洗浄を行うウェット洗浄装置において、前記被洗
浄物を浸漬する如く、前記液体を貯留する浸漬槽および
該浸漬槽内の前記液体に超音波振動を与える超音波発生
手段を有する浸漬洗浄機構と、前記被洗浄物に前記液体
をスプレィするスプレィ洗浄機構とを具備したことを特
徴とする。
[Structure of the Invention] (Means for Solving the Problems) That is, the present invention provides a wet cleaning apparatus that performs cleaning by sequentially contacting a plurality of types of liquids to an object to be cleaned. An immersion cleaning mechanism comprising an immersion tank for storing a liquid, an ultrasonic generation means for applying ultrasonic vibration to the liquid in the immersion tank, and a spray cleaning mechanism for spraying the liquid onto the object to be cleaned. Features.

(作 用) 上記構成の本発明のウェット洗浄装置では、被洗浄物を
浸漬する如く、液体を貯留する浸漬槽およびこの浸漬槽
内の液体に超音波振動を与える超音波発生手段を有する
浸漬洗浄機構と、被洗浄物に液体をスプレィするスプレ
ィ洗浄機構とを備えている。
(Function) The wet cleaning apparatus of the present invention having the above configuration includes an immersion tank for storing liquid and an ultrasonic generation means for applying ultrasonic vibration to the liquid in the immersion tank, so as to immerse the object to be cleaned. and a spray cleaning mechanism that sprays liquid onto the object to be cleaned.

したがって、浸漬洗浄機構により、超音波振動を利用し
た有効な洗浄を実施することができる。
Therefore, the immersion cleaning mechanism allows effective cleaning using ultrasonic vibration.

また、1つのスプレィ洗浄機構により複数の洗浄工程を
実施することができるので、工程数に応じた数の浸漬槽
を設ける必要もなく、装置の大型化を抑制することがで
き、スペースファクターの向上を図ることができる。
In addition, since multiple cleaning processes can be performed with one spray cleaning mechanism, there is no need to provide a number of immersion tanks according to the number of processes, and the size of the equipment can be suppressed, improving the space factor. can be achieved.

(実施例) 以下、本発明のウェット洗浄装置の一実施例を、図面を
参照して説明する。
(Example) Hereinafter, an example of the wet cleaning apparatus of the present invention will be described with reference to the drawings.

第1図に示すように、ウェット洗浄装置の筐体1内は、
スプレィ洗浄機構収容部2と、浸漬洗浄機構収容部3と
に分離されている。
As shown in FIG. 1, the inside of the casing 1 of the wet cleaning device is
It is separated into a spray cleaning mechanism housing part 2 and an immersion cleaning mechanism housing part 3.

上記スプレィ洗浄機構収容部2内には、周知のスプレィ
式洗浄装置と同様に構成されたスプレィ洗浄機構が収容
されている。
The spray cleaning mechanism housing section 2 accommodates a spray cleaning mechanism configured similarly to a well-known spray type cleaning device.

すなわち、上記スプレィ洗浄機構収容部2内には、円筒
状のスプレィチャンバ4が設けられており、このスプレ
ィチャンバ4内には、複数枚(例えば25枚)の半導体
ウェハ5を収容可能に構成されたウェハカセット6を支
持してこのウェハカセット6を図示矢印の如くモータに
より回転させる回転機構7が設けられている。
That is, a cylindrical spray chamber 4 is provided in the spray cleaning mechanism housing section 2, and is configured to accommodate a plurality of (for example, 25) semiconductor wafers 5 in the spray chamber 4. A rotation mechanism 7 is provided which supports the wafer cassette 6 and rotates the wafer cassette 6 by a motor as shown by the arrow in the figure.

また、この回転機構7の周囲には、複数例えば2つのス
プレィノズル8a、8bが設けられている。これらのス
プレィノズル8a、8bは、弁機構9a、9bを介して
、所定の液体、例えばアンモニア溶液、硫酸溶液、フッ
化水素酸溶液等の洗浄用の液体、あるいは純水等のリン
ス用の液体を収容する液体収容部10a、 IQbに接
続されている。さらに、上記スプレィノズル8a、8b
には、洗浄用液体を予め洗浄に効果のある所定の温度に
設定するヒータまたは冷却器を設けてもよい。
Further, around this rotation mechanism 7, a plurality of spray nozzles 8a and 8b, for example, two spray nozzles, are provided. These spray nozzles 8a, 8b are supplied with a predetermined liquid via valve mechanisms 9a, 9b, such as a cleaning liquid such as an ammonia solution, a sulfuric acid solution, or a hydrofluoric acid solution, or a rinsing liquid such as pure water. The liquid storage section 10a and IQb are connected to each other. Furthermore, the spray nozzles 8a, 8b
A heater or a cooler may be provided to set the cleaning liquid to a predetermined temperature that is effective for cleaning.

また、スプレィチャンバ4の下部には、ドレン配管11
が設けられている。
In addition, a drain pipe 11 is provided at the bottom of the spray chamber 4.
is provided.

そして、弁機構9819bを選択的に開閉することによ
り、スプレィノズル8a、8bから、スプレィチャンバ
4内の半導体ウェハ5に所望の液体をスプレィすること
ができるよう構成されている。
By selectively opening and closing the valve mechanism 9819b, a desired liquid can be sprayed from the spray nozzles 8a and 8b onto the semiconductor wafer 5 in the spray chamber 4.

なお、上記スプレィノズル8 a s 8 b 、弁機
構9as9bs液体収容部10a、10b等の数は、ス
プレィチャンバ4内で実施される洗浄工程に必要な液体
の数に応じて設定される。すなわち、上記例の場合は、
2種類の液体を用いた洗浄を実施することができるが、
3種類の液体あるいは4種類の液体を必要とする場合は
、上記機構の数を3あるいは4に設定する。
Note that the number of the spray nozzles 8 a s 8 b , the valve mechanisms 9 as 9 b , the liquid storage portions 10 a and 10 b, etc. is set according to the number of liquids required for the cleaning process performed within the spray chamber 4 . In other words, in the above example,
Cleaning can be carried out using two types of liquids,
If three or four types of liquids are required, the number of mechanisms is set to three or four.

また、弁機構9a、9bの開閉は、図示しない制御機構
により、予め設定されたプログラムに従って実施される
。また、液体収容部10a、10b内の液体は、例えば
液体収容部10a、10bに印加した不活性ガス(例え
ば窒素ガス)のガス圧により、スプレィノズル8a、8
bに送出される。
Further, the valve mechanisms 9a and 9b are opened and closed by a control mechanism (not shown) according to a preset program. Further, the liquid in the liquid storage parts 10a, 10b is supplied to the spray nozzles 8a, 8 by the gas pressure of an inert gas (for example, nitrogen gas) applied to the liquid storage parts 10a, 10b.
b.

一方、浸漬洗浄機構収容部3内には、上述したような所
定の洗浄用の液体、あるいはリンス用の液体を貯留する
浸漬槽12が設けられており、この浸漬槽12には、浸
漬槽12内に貯留された液体に超音波振動を与える超音
波発生機構13が設けられている。
On the other hand, an immersion tank 12 for storing a predetermined cleaning liquid or rinsing liquid as described above is provided in the immersion cleaning mechanism housing section 3. An ultrasonic generating mechanism 13 is provided that applies ultrasonic vibrations to the liquid stored therein.

そして、この浸漬槽12内に、ウェハカセット5等に収
容された複数枚の半導体ウェハ6をウェハカセット5ご
と浸漬し、洗浄液の化学的洗浄効果と、超音波の物理的
洗浄効果を併用して効果的な洗浄を実施することができ
るよう構成されている。
Then, a plurality of semiconductor wafers 6 housed in a wafer cassette 5 or the like are immersed together with the wafer cassette 5 in this immersion bath 12, and the chemical cleaning effect of the cleaning liquid and the physical cleaning effect of the ultrasonic waves are used together. It is constructed so that effective cleaning can be carried out.

上記洗浄液は、さらにを洗浄効果を高めるためヒータま
たは冷却器を設けてもよいし、予め所望する温度にした
洗浄液を浸漬槽に供給してもよい。
The cleaning liquid may be further provided with a heater or a cooler to enhance the cleaning effect, or the cleaning liquid may be supplied to the immersion tank at a desired temperature in advance.

上記構成のこの実施例のウェット洗浄装置では、図示し
ない搬送ロボット等により、複数枚の半導体ウェハ6を
収容したウェハカセット5を搬送する。
In the wet cleaning apparatus of this embodiment having the above configuration, a wafer cassette 5 containing a plurality of semiconductor wafers 6 is transported by a transport robot (not shown) or the like.

そして、例えば、ウェハカセット5をまずスプレィチャ
ンバ4内に収容し、ウェハカセット5を回転させながら
、洗浄用の液体、例えば硫酸溶液をスプレィする。
For example, the wafer cassette 5 is first placed in the spray chamber 4, and while the wafer cassette 5 is being rotated, a cleaning liquid such as a sulfuric acid solution is sprayed onto the wafer cassette 5.

この後、弁機構9a、9bを切り換えて、別の洗浄用の
液体、例えばアンモニア士塩酸溶液を、ウェハカセット
5を回転させながら、スプレィする。
Thereafter, the valve mechanisms 9a and 9b are switched to spray another cleaning liquid, such as an ammonia-hydrochloric acid solution, while rotating the wafer cassette 5.

しかる後、図示しない搬送ロボット等により、スプレィ
チャンバ4内からウェハカセット5を搬出し、浸漬槽1
2内に収容する。なお、浸漬槽12内には、予め所定の
液体、例えばアンモニア溶液を貯留しておく。
Thereafter, the wafer cassette 5 is carried out from the spray chamber 4 by a transport robot (not shown), and the wafer cassette 5 is transferred to the immersion tank 1.
Contained within 2. Note that a predetermined liquid, such as an ammonia solution, is stored in the immersion tank 12 in advance.

そして、ウェハカセット5および半導体ウェハ6を浸漬
槽12内の液体に浸漬した状態で、超音波発生機構13
から浸漬槽12内の液体に超音波振動を与え、洗浄液の
化学的洗浄効果と、超音波の物理的洗浄効果を併用して
効果的な洗浄を実施する。
Then, with the wafer cassette 5 and the semiconductor wafer 6 immersed in the liquid in the immersion tank 12, the ultrasonic generation mechanism 13
Ultrasonic vibrations are applied to the liquid in the immersion tank 12, and effective cleaning is carried out by combining the chemical cleaning effect of the cleaning liquid and the physical cleaning effect of the ultrasonic waves.

すなイ)ち、上記構成のこの実施例のウェット洗浄装置
では、スプレィチャンバ4内で複数種の液体を用いた複
数の洗浄工程を実施することができるので、工程数に応
じた数の浸漬槽を設ける必要がなく、装置の大型化を抑
制し、スペースファクターの向上を図ることができ、か
つ、半導体ウェハ6を浸/J:i槽12内の液体に浸漬
した状態で、超音波を用いた効果的な洗浄を実施するこ
とができる。
In other words, in the wet cleaning apparatus of this embodiment having the above configuration, multiple cleaning processes using multiple types of liquids can be carried out in the spray chamber 4, so the number of immersions corresponding to the number of processes can be carried out. There is no need to provide a tank, the size of the device can be suppressed, and the space factor can be improved. Effective cleaning can be carried out using

なお、上記例では、浸漬槽12内で超音波を用いた洗浄
を実施する場合について説明したが、例えば最終洗浄工
程として、浸漬槽12内に浸漬し、超音波を用いずに、
洗浄を行うことも有効である。
In addition, in the above example, the case where cleaning was carried out using ultrasonic waves in the immersion tank 12 was explained, but for example, as a final cleaning step, immersing in the immersion tank 12 without using ultrasonic waves,
Cleaning is also effective.

これは、例えばフッ化水素酸溶液等を用いてスプレィ洗
浄を行うと、半導体ウェハ6にごみ等が多く付るするこ
とがあるためである。
This is because, for example, when spray cleaning is performed using a hydrofluoric acid solution or the like, a large amount of dust and the like may adhere to the semiconductor wafer 6.

また、上記実施例では、スプレィ洗浄機構と浸漬洗浄機
構をそれぞれ1つずつ設けた例について説明したが、こ
れらの機構の数は、洗浄工程に応じて適宜設定する。
Further, in the above embodiment, an example was described in which one spray cleaning mechanism and one immersion cleaning mechanism were provided, but the number of these mechanisms is appropriately set depending on the cleaning process.

[発明の効果] 以上説明したように、本発明のウェット洗浄装置によれ
ば、超音波振動を利用した有効な洗浄を実施することも
でき、かつ、装置の大型化を抑制することにより、スペ
ースファクターの向上を図ることができる。
[Effects of the Invention] As explained above, according to the wet cleaning device of the present invention, effective cleaning can be carried out using ultrasonic vibration, and space is saved by suppressing the device from becoming large. It is possible to improve the factor.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例のウェット洗浄装置の構成を
示す図である。 1・・・・・・筐体、2・・・・・・スプレィ洗浄機構
収容部、3・・・・・・浸漬洗浄機構収容部、4・・・
・・・スプレィチャンバ、5・・・・・・半導体ウェハ
、6・・・・・・ウェハカセット、7・・・・・・回転
機構、8a、8b・・・・・・スプレィノズル、9a、
9b・・・・・・弁機構、10a、10b・・・・・・
液体収容部、11・・・・・・ドレン配管、12・・・
・・・浸漬槽、13・・・・・・超音波発生機構。 ] 第 図
FIG. 1 is a diagram showing the configuration of a wet cleaning device according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Housing, 2... Spray cleaning mechanism housing part, 3... Immersion cleaning mechanism housing part, 4...
... Spray chamber, 5 ... Semiconductor wafer, 6 ... Wafer cassette, 7 ... Rotation mechanism, 8a, 8b ... Spray nozzle, 9a,
9b...Valve mechanism, 10a, 10b...
Liquid storage section, 11...Drain piping, 12...
... Immersion tank, 13... Ultrasonic generation mechanism. ] Figure

Claims (1)

【特許請求の範囲】[Claims] (1)被洗浄物に複数種の液体を順次接触させて洗浄を
行うウェット洗浄装置において、 前記被洗浄物を浸漬する如く、前記液体を貯留する浸漬
槽および該浸漬槽内の前記液体に超音波振動を与える超
音波発生手段を有する浸漬洗浄機構と、 前記被洗浄物に前記液体をスプレイするスプレイ洗浄機
構とを具備したことを特徴とするウェット洗浄装置。
(1) In a wet cleaning device that cleans an object to be cleaned by sequentially contacting the object with a plurality of liquids, a dipping tank for storing the liquid and an overflow of the liquid in the dipping tank are used so that the object to be cleaned is immersed. A wet cleaning apparatus comprising: an immersion cleaning mechanism having an ultrasonic generating means for applying sonic vibration; and a spray cleaning mechanism that sprays the liquid onto the object to be cleaned.
JP2083238A 1990-03-30 1990-03-30 Wet cleaning equipment Expired - Fee Related JP2963947B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2083238A JP2963947B2 (en) 1990-03-30 1990-03-30 Wet cleaning equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2083238A JP2963947B2 (en) 1990-03-30 1990-03-30 Wet cleaning equipment

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Publication Number Publication Date
JPH03283535A true JPH03283535A (en) 1991-12-13
JP2963947B2 JP2963947B2 (en) 1999-10-18

Family

ID=13796745

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Application Number Title Priority Date Filing Date
JP2083238A Expired - Fee Related JP2963947B2 (en) 1990-03-30 1990-03-30 Wet cleaning equipment

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Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008510302A (en) * 2004-08-12 2008-04-03 アプライド マテリアルズ インコーポレイテッド Semiconductor substrate processing equipment
CN115318749A (en) * 2022-10-13 2022-11-11 阳信东泰精密金属有限公司 Surface cleaning device for machining of mechanical parts

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998158U (en) * 1972-12-15 1974-08-23
JPS587830A (en) * 1981-07-08 1983-01-17 Hitachi Ltd Article washing method and device thererof
JPS59195651A (en) * 1983-04-21 1984-11-06 Nec Corp Device for washing photomask
JPS61249581A (en) * 1985-04-30 1986-11-06 ホ−ヤ株式会社 Washer
JPS6393140A (en) * 1986-10-07 1988-04-23 Mitsubishi Electric Corp Device for cleaning lead frame for semiconductor device
JPS63173245U (en) * 1987-04-30 1988-11-10

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998158U (en) * 1972-12-15 1974-08-23
JPS587830A (en) * 1981-07-08 1983-01-17 Hitachi Ltd Article washing method and device thererof
JPS59195651A (en) * 1983-04-21 1984-11-06 Nec Corp Device for washing photomask
JPS61249581A (en) * 1985-04-30 1986-11-06 ホ−ヤ株式会社 Washer
JPS6393140A (en) * 1986-10-07 1988-04-23 Mitsubishi Electric Corp Device for cleaning lead frame for semiconductor device
JPS63173245U (en) * 1987-04-30 1988-11-10

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008510302A (en) * 2004-08-12 2008-04-03 アプライド マテリアルズ インコーポレイテッド Semiconductor substrate processing equipment
CN115318749A (en) * 2022-10-13 2022-11-11 阳信东泰精密金属有限公司 Surface cleaning device for machining of mechanical parts
CN115318749B (en) * 2022-10-13 2023-03-28 阳信东泰精密金属有限公司 Surface cleaning device for machining of mechanical parts

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