JPH04336430A - Cleaning method - Google Patents
Cleaning methodInfo
- Publication number
- JPH04336430A JPH04336430A JP13530191A JP13530191A JPH04336430A JP H04336430 A JPH04336430 A JP H04336430A JP 13530191 A JP13530191 A JP 13530191A JP 13530191 A JP13530191 A JP 13530191A JP H04336430 A JPH04336430 A JP H04336430A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- processing
- liquid
- tank
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000007788 liquid Substances 0.000 claims description 55
- 238000001035 drying Methods 0.000 abstract description 8
- 239000007921 spray Substances 0.000 abstract description 5
- 238000005507 spraying Methods 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 6
- 241000894006 Bacteria Species 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 3
- 238000005273 aeration Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】この発明は洗浄方法に関するもの
で、例えば半導体ウエハ等の被処理体を純水あるいは薬
液を収容する処理槽に浸漬して洗浄処理する洗浄方法に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method, and more particularly, to a cleaning method in which an object to be processed, such as a semiconductor wafer, is immersed in a processing tank containing pure water or a chemical solution.
【0002】0002
【従来の技術】一般に、半導体ウエハの洗浄方法として
、処理槽内に収容される洗浄用処理液中に半導体ウエハ
を浸漬する方法、あるいは、洗浄用処理液に半導体ウエ
ハを浸漬した状態で処理槽の下部より処理液中に気体を
噴射して、バブリングにより被処理体の洗浄を行うもの
等が知られている。これらの洗浄方法を行うことにより
半導体ウエハの表面に付着した薬液や不純物等が除去さ
れてクリーンな状態となり歩留りの向上が図られている
。[Prior Art] Generally, as a method for cleaning semiconductor wafers, there is a method in which the semiconductor wafer is immersed in a cleaning processing solution contained in a processing tank, or a method in which the semiconductor wafer is immersed in the cleaning processing solution in a processing tank. There are known devices in which gas is injected into the processing liquid from the lower part of the processing liquid and the object to be processed is cleaned by bubbling. By performing these cleaning methods, chemicals, impurities, etc. adhering to the surface of the semiconductor wafer are removed, resulting in a clean state, thereby improving the yield.
【0003】0003
【発明が解決しようとする課題】しかしながら、従来の
洗浄方法においては、洗浄処理後に半導体ウエハが洗浄
処理液と非接触の状態のときに半導体ウエハが空気中に
晒されることによって乾燥することがあり、この乾燥に
よって表面にしみが生じることがあった。このしみは外
観上の問題ばかりではなく、不良の原因となったり、電
気的特性が阻害される等の品質の低下を招く虞れもあっ
た。この問題は上記以外の洗浄方法においても同様に現
れている。However, in conventional cleaning methods, when the semiconductor wafer is not in contact with the cleaning solution after the cleaning process, the semiconductor wafer may be exposed to air and dry. , This drying could cause stains on the surface. These stains not only cause problems in appearance, but also pose a risk of deterioration in quality, such as causing defects or inhibiting electrical characteristics. This problem also appears in cleaning methods other than those described above.
【0004】また、一般に、洗浄効率を高めるためには
、洗浄処理液を絶えず新しくする必要があり、そのため
に、複数の処理槽を用意して複数の洗浄処理工程を行わ
なければならないが、複数の処理槽を設けることは多く
のスペースが必要となるという問題がある。[0004] Generally, in order to improve cleaning efficiency, it is necessary to constantly refresh the cleaning solution, and for this purpose, it is necessary to prepare multiple treatment tanks and perform multiple cleaning processes. There is a problem in that providing a treatment tank requires a large amount of space.
【0005】この発明は上記事情に鑑みなされたもので
、洗浄処理される被処理体の乾燥を防止して、被処理体
の品質の低下を防止すると共に、小スペースの下で洗浄
効率を高めるようにした洗浄方法を提供することを目的
とするものである。The present invention was made in view of the above-mentioned circumstances, and it is possible to prevent the object to be cleaned from drying out, thereby preventing deterioration in the quality of the object to be treated, and to improve cleaning efficiency in a small space. It is an object of the present invention to provide a cleaning method as described above.
【0006】[0006]
【課題を解決するための手段】上記目的を達成するため
に、この発明の洗浄方法は、処理槽内に収容される洗浄
処理液中に被処理体を浸漬させて被処理体を洗浄するに
際して、上記洗浄処理液を少なくとも1回以上排液する
と共に供給し、上記洗浄処理液を排液する際に、上記被
処理体に洗浄液を噴射することを特徴とするものである
。[Means for Solving the Problems] In order to achieve the above object, the cleaning method of the present invention provides a method for cleaning an object to be processed by immersing the object in a cleaning solution contained in a processing tank. The method is characterized in that the cleaning treatment liquid is drained and supplied at least once, and when the cleaning treatment liquid is drained, the cleaning liquid is injected onto the object to be treated.
【0007】この発明において、上記被処理体を洗浄す
る手段は洗浄処理液中に被処理体を浸漬するものであれ
ば、任意の洗浄方法でよく、例えば静止槽やオーバーフ
ロー槽内に収容される洗浄処理液に被処理体を浸漬する
方法、あるいは洗浄処理液中に被処理体を浸漬した状態
で下部から空気を噴射させてバブリングによって洗浄を
行う方法等のいずれであっても差支えない。In the present invention, the means for cleaning the object to be processed may be any cleaning method as long as the object to be processed is immersed in a cleaning solution; Any method may be used, such as a method in which the object to be processed is immersed in the cleaning treatment liquid, or a method in which the object to be treated is immersed in the cleaning treatment liquid and air is injected from the bottom to perform bubbling.
【0008】上記洗浄液を噴射させる手段として処理槽
の上部に配設されるノズルを使用することが可能であり
、このノズルは処理槽の上部に常備されるものであって
も差支えないが、好ましくは使用時にのみ被処理体の上
方に位置し、不使用時には処理槽の外方へ待機する切換
え移動可能なものである方がよい。この場合、ノズルは
洗浄処理液の排液時に被処理体に洗浄液を噴射し、それ
以外の時には洗浄液の噴射を停止するON、OFF運転
であってもよいが、運転停止時には洗浄液供給源とノズ
ルとの間に配設されるON、OFF用の切換手段とノズ
ルとの間の管路中に滞留する洗浄液にバクテリアの繁殖
等を防止する手段を講じる方がより好ましい。[0008] As means for spraying the cleaning liquid, it is possible to use a nozzle disposed at the top of the processing tank, and although this nozzle may be permanently installed at the top of the processing tank, it is preferable to It is preferable that the switch be movable so that it is located above the object to be processed only when in use, and waits outside the processing tank when not in use. In this case, the nozzle may be operated in an ON or OFF mode, injecting the cleaning liquid onto the object to be treated when the cleaning treatment liquid is drained, and stopping spraying the cleaning liquid at other times; however, when the operation is stopped, the cleaning liquid supply source and the nozzle are It is more preferable to take measures to prevent the propagation of bacteria in the cleaning liquid remaining in the conduit between the ON/OFF switching means disposed between the nozzle and the nozzle.
【0009】[0009]
【作用】上記のように構成されるこの発明によれば、処
理槽内に収容される洗浄処理液中に被処理体を浸漬させ
て被処理体を洗浄するに際して、洗浄処理液を少なくと
も1回以上排液すると共に供給することにより、小スペ
ースの下で絶えず新しい洗浄処理液を使用することがで
きるので、被処理体の洗浄を効率良く行うことができる
。また、洗浄処理液を排液する際に、被処理体に洗浄液
を噴射することにより、被処理体が空気に晒されて乾燥
するのを防止して、乾燥による被処理体の品質低下を防
止することができる。[Operation] According to the present invention configured as described above, when cleaning the object by immersing the object in the cleaning solution contained in the processing tank, the cleaning solution is applied at least once. By draining and supplying the liquid as described above, new cleaning treatment liquid can be constantly used in a small space, so that the object to be treated can be cleaned efficiently. In addition, by spraying the cleaning liquid onto the object to be processed when draining the cleaning treatment liquid, the object to be processed is prevented from being exposed to the air and dried, thereby preventing quality deterioration of the object to be processed due to drying. can do.
【0010】0010
【実施例】以下にこの発明の実施例を図面に基いて詳細
に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the present invention will be described below in detail with reference to the drawings.
【0011】図1はこの発明の洗浄方法を実施するため
の洗浄装置の概略断面図が示されている。FIG. 1 shows a schematic cross-sectional view of a cleaning apparatus for carrying out the cleaning method of the present invention.
【0012】洗浄装置は、純水等の洗浄処理液1を収容
する処理槽2と、昇降移動して被処理体である半導体ウ
エハ3(以下にウエハという)を処理槽2内の洗浄処理
液1中に浸漬するウエハ保持アーム4と、処理槽2の底
部に配設されて図示しない窒素(N2 )ガス供給源か
ら供給されるN2 ガスを洗浄処理液1中に噴射する散
気管5と、処理槽2の上部に配置される洗浄液噴射ノズ
ル6(以下にノズルという)と、ノズル6に洗浄液であ
る純水7を供給する洗浄液収容タンク8とで主要部が構
成されている。The cleaning device includes a processing tank 2 that stores a cleaning processing liquid 1 such as pure water, and a processing tank 2 that moves up and down to clean semiconductor wafers 3 (hereinafter referred to as wafers) as objects to be processed using the cleaning processing liquid in the processing tank 2. a wafer holding arm 4 immersed in the cleaning solution 1; an aeration pipe 5 disposed at the bottom of the processing tank 2 and injecting N2 gas supplied from a nitrogen (N2) gas supply source (not shown) into the cleaning processing solution 1; The main parts are composed of a cleaning liquid spray nozzle 6 (hereinafter referred to as a nozzle) arranged at the upper part of the processing tank 2 and a cleaning liquid storage tank 8 that supplies pure water 7, which is a cleaning liquid, to the nozzle 6.
【0013】処理槽2は、洗浄処理液1を収容する内槽
2aと、この内槽2aの上部周辺に設けられて内槽2a
の上端から溢流する洗浄処理液1を受止める外槽2bと
で構成されており、また、内槽2aの底部には洗浄処理
液1の排液用の排液管路9a及び供給用の供給管路9b
が接続されて、この排液及び供給管路9a,9bを介し
て処理槽2内の洗浄処理液1の排液及び図示しない洗浄
処理液供給源からの供給が行われるようになっている。
したがって、1つの処理槽2で洗浄処理液1を入替えて
洗浄することができるので、スペースの有効利用を図る
ことができる。The processing tank 2 includes an inner tank 2a containing the cleaning processing liquid 1, and an inner tank 2a provided around the upper part of the inner tank 2a.
It consists of an outer tank 2b that catches the cleaning treatment liquid 1 overflowing from the upper end, and a drainage pipe 9a for draining the cleaning treatment liquid 1 and a supply line at the bottom of the inner tank 2a. Supply pipe line 9b
are connected, and the cleaning treatment liquid 1 in the processing tank 2 is drained and supplied from a cleaning treatment liquid supply source (not shown) through these drainage and supply pipes 9a and 9b. Therefore, since cleaning can be performed by replacing the cleaning treatment liquid 1 in one treatment tank 2, space can be used effectively.
【0014】ノズル6は、位置切換モータ10の駆動軸
11に連結して処理槽2の上部一側に垂下する切換アー
ム12の下端部に装着される洗浄パイプ13の下面部に
例えば複数個2列に設けられて、洗浄時にはウエハ3の
全面に向って純水7を霧状あるいはシャワー状に噴射し
、非洗浄時には位置切換モータ10の駆動によって回転
する切換アーム12に伴って外槽2b上の待機位置に切
換わり、ウエハ3の搬入・搬出に支障をきたすことのな
いように退避するようになっている(図2参照)。For example, a plurality of nozzles 6 are installed on the lower surface of a cleaning pipe 13 attached to the lower end of a switching arm 12 connected to a drive shaft 11 of a position switching motor 10 and hanging down to one side of the upper part of the processing tank 2. The pure water 7 is sprayed in the form of a mist or shower over the entire surface of the wafer 3 during cleaning, and when not being cleaned, the switching arm 12 rotates by the drive of the position switching motor 10, and the pure water 7 is sprayed onto the outer tank 2b. The wafer 3 is switched to the standby position and evacuated so as not to interfere with the loading and unloading of the wafer 3 (see FIG. 2).
【0015】ノズル6と洗浄液収容タンク8とは、供給
管路14を介して接続されており、この供給管路14の
一部にバイパス管路15が並列に接続されている。また
、供給管路14とバイパス管路15には4ポート2位置
切換用の切換弁16が配設されて供給管路14とバイパ
ス管路15とが選択的に接続されるようになっている。
更に、バイパス管路15には絞り弁17が設けられてバ
イパス管路15を流れる純水7の流量が少量となるよう
に設定されている。The nozzle 6 and the cleaning liquid storage tank 8 are connected through a supply line 14, and a bypass line 15 is connected in parallel to a part of the supply line 14. Further, a switching valve 16 for switching between four ports and two positions is provided in the supply pipe line 14 and the bypass pipe line 15, so that the supply pipe line 14 and the bypass pipe line 15 are selectively connected. . Furthermore, a throttle valve 17 is provided in the bypass line 15, and the flow rate of the pure water 7 flowing through the bypass line 15 is set to be small.
【0016】上記のように構成される洗浄装置において
、ウエハ3の洗浄時には、図1に示すように、ノズル6
がウエハ3の上部側に位置した状態で切換弁16によっ
て供給管路14が接続状態となり、洗浄液収容タンク8
内の純水7がノズル6からウエハ3の全面に噴射される
。また、非洗浄時には、図2に示すように、ノズル6が
外槽2bの上部側に位置した状態で切換弁16によって
バイパス管路15が接続状態となり、洗浄液収容タンク
8内の純水7が絞り弁17を通過してノズル6から少量
の純水7が外槽2bに滴下するようになっている。した
がって、切換弁16とノズル6との間に純水7が滞留す
ることはなく、洗浄液が死水化してバクテリアが繁殖す
るのを防止することができる。In the cleaning apparatus configured as described above, when cleaning the wafer 3, as shown in FIG.
is located above the wafer 3, the supply pipe 14 is connected by the switching valve 16, and the cleaning liquid storage tank 8 is connected.
The pure water 7 inside is sprayed from the nozzle 6 onto the entire surface of the wafer 3. In addition, when not cleaning, as shown in FIG. 2, the bypass pipe 15 is connected by the switching valve 16 with the nozzle 6 located at the upper side of the outer tank 2b, and the pure water 7 in the cleaning liquid storage tank 8 is A small amount of pure water 7 passes through the throttle valve 17 and drops from the nozzle 6 into the outer tank 2b. Therefore, the pure water 7 does not remain between the switching valve 16 and the nozzle 6, and it is possible to prevent the cleaning liquid from turning into dead water and breeding bacteria.
【0017】なお、洗浄液収容タンク8の外周部には、
静電容量型センサー18が例えば3個配設されており、
このセンサー18によって洗浄液収容タンク8内の純水
7と接触することなく、純水7の収容状態(液量)を検
知することができるようになっている。したがって、純
水7に接触させて液量を検知する光センサーに比べて寿
命の増大が図れると共に、光によるバクテリアの繁殖等
を防止することができる。なお、洗浄液収容タンク8は
非金属製であれば非透明体であっても純水7の液量を検
知することができる。すなわち、静電容量型センサー1
8が適正に動作するのであれば、いずれの材料で製作さ
れていても構わない。It should be noted that on the outer periphery of the cleaning liquid storage tank 8,
For example, three capacitive sensors 18 are arranged,
This sensor 18 can detect the storage state (liquid amount) of the pure water 7 in the cleaning liquid storage tank 8 without coming into contact with the pure water 7. Therefore, compared to an optical sensor that detects the liquid level by contacting with pure water 7, the lifespan of the sensor can be increased, and the proliferation of bacteria due to light can be prevented. Note that if the cleaning liquid storage tank 8 is made of non-metallic material, the amount of pure water 7 can be detected even if it is non-transparent. That is, capacitive sensor 1
8 may be made of any material as long as it operates properly.
【0018】次に、この発明の洗浄方法をウエハ3の洗
浄処理に使用した場合について、図3を参照して説明す
る。Next, the case where the cleaning method of the present invention is used for cleaning the wafer 3 will be explained with reference to FIG.
【0019】まず、ウエハ保持アーム4上にウエハ3を
例えば複数枚同時に立設保持した後、ウエハ保持アーム
4を下降して処理槽2内に予め収容された洗浄処理液1
中にウエハ3を浸漬する。そして、N2 ガス供給源か
ら供給されるN2 ガスを散気管5から洗浄処理液1中
に噴射して泡を発生させ、この泡によるバブリングを所
定時間行うことによってウエハ3の表面の1回目の洗浄
が行われる(図3(a)参照)。このときのノズル6は
外槽2b上に待機して少量の純水7が外槽2b内に滴下
された状態となっている。First, for example, a plurality of wafers 3 are held upright on the wafer holding arm 4 at the same time, and then the wafer holding arm 4 is lowered and the cleaning processing liquid 1 stored in advance in the processing tank 2 is removed.
The wafer 3 is immersed therein. Then, the N2 gas supplied from the N2 gas supply source is injected into the cleaning treatment liquid 1 from the aeration pipe 5 to generate bubbles, and bubbling with the bubbles is performed for a predetermined period of time, thereby cleaning the surface of the wafer 3 for the first time. is performed (see FIG. 3(a)). At this time, the nozzle 6 is on standby above the outer tank 2b, and a small amount of pure water 7 is dripped into the outer tank 2b.
【0020】1回目の洗浄を行った後、排液管路9aの
弁(図示せず)を開放して、処理槽2内の洗浄処理液1
を排液し(図3(b)参照)、排液後に・供給管路9b
から新しい洗浄処理液1を供給するのであるが、この排
液の際に、ノズル6をウエハ3の上部位置に移動し、そ
して、切換弁16を切換えて、洗浄液収容タンク8内の
純水7をノズル6からウエハ3の全面に噴射して、ウエ
ハ3の乾燥を防止する(図3(c)参照)。このノズル
6からの純水7の噴射は洗浄処理液1が処理槽2の内槽
2a内に充満されるまで続けられる。After the first cleaning, the valve (not shown) of the drain pipe 9a is opened, and the cleaning liquid 1 in the treatment tank 2 is drained.
(see Figure 3(b)), and after draining the supply pipe 9b.
When draining the liquid, the nozzle 6 is moved to a position above the wafer 3, and the switching valve 16 is switched to supply pure water 7 in the cleaning liquid storage tank 8. is sprayed from the nozzle 6 onto the entire surface of the wafer 3 to prevent the wafer 3 from drying (see FIG. 3(c)). This jetting of the pure water 7 from the nozzle 6 is continued until the inner tank 2a of the processing tank 2 is filled with the cleaning processing liquid 1.
【0021】2回目の洗浄処理液1が内槽2a内に充満
された後、ノズル6を外槽2b上に待機させた後、上記
と同様に散気管5からN2 ガスを噴射させて2回目の
洗浄を行い、以下、同様の操作を繰返してウエハ3の洗
浄を行うのである。After the inner tank 2a is filled with the second cleaning treatment liquid 1, the nozzle 6 is placed on standby above the outer tank 2b, and then N2 gas is injected from the diffuser pipe 5 in the same manner as above. After that, the same operation is repeated to clean the wafer 3.
【0022】したがって、洗浄処理液1の排液時におい
てもウエハ3は空気に晒されることなく常に洗浄処理液
1あるいは純水7と接触するので、乾燥してしみを発生
することがない。Therefore, even when the cleaning liquid 1 is drained, the wafer 3 is not exposed to air and is always in contact with the cleaning liquid 1 or pure water 7, so that it does not dry out and cause stains.
【0023】なお、上記実施例ではこの発明の洗浄方法
をウエハ3の洗浄の場合について説明したが、必ずしも
ウエハ3の洗浄の場合に限定されるものではなく、その
他の被処理体を洗浄処理液に浸漬させて洗浄する方法に
も適用することができるものである。In the above embodiment, the cleaning method of the present invention was explained for cleaning the wafer 3, but it is not necessarily limited to cleaning the wafer 3. It can also be applied to a method of washing by immersing it in water.
【0024】[0024]
【発明の効果】以上に説明したように、この発明の洗浄
方法によれば、上記のように構成されているため、小ス
ペースの下で絶えず新しい洗浄処理液を使用することが
できると共に、被処理体の洗浄を効率良く行うことがで
きる。しかも、洗浄処理液を排液する際に、被処理体に
洗浄液を噴射するので、被処理体が空気に晒されて乾燥
するのを防止でき、乾燥による被処理体の品質低下を防
止することができる等の優れた効果が得られる。As explained above, according to the cleaning method of the present invention, since it is configured as described above, it is possible to constantly use new cleaning processing liquid in a small space, and it is also possible to The processing body can be efficiently cleaned. Moreover, since the cleaning liquid is sprayed onto the object to be processed when the cleaning treatment liquid is drained, it is possible to prevent the object to be processed from being exposed to the air and drying out, thereby preventing the quality of the object to be degraded due to drying. Excellent effects such as being able to do this can be obtained.
【図1】この発明に係る洗浄装置の一例を示す概略断面
図である。FIG. 1 is a schematic cross-sectional view showing an example of a cleaning device according to the present invention.
【図2】この発明における洗浄液噴射ノズルの不使用状
態を示す概略断面図である。FIG. 2 is a schematic cross-sectional view showing the cleaning liquid spray nozzle in the present invention when it is not in use.
【図3】この発明の洗浄方法の工程を説明する概略断面
図である。FIG. 3 is a schematic cross-sectional view illustrating the steps of the cleaning method of the present invention.
1 洗浄処理液 2 処理槽 3 半導体ウエハ(被処理体) 6 洗浄液噴射ノズル 7 純水(洗浄液) 9a 排液管路 9b 供給管路 1 Cleaning treatment liquid 2 Processing tank 3 Semiconductor wafer (object to be processed) 6 Cleaning liquid spray nozzle 7 Pure water (cleaning liquid) 9a Drainage pipe line 9b Supply pipeline
Claims (1)
被処理体を浸漬させて被処理体を洗浄するに際して、上
記洗浄処理液を少なくとも1回以上排液すると共に供給
し、上記洗浄処理液を排液する際に、上記被処理体に洗
浄液を噴射することを特徴とする洗浄方法。Claim 1: When cleaning an object by immersing the object in a cleaning solution stored in a processing tank, draining and supplying the cleaning solution at least once, A cleaning method characterized in that when draining the treatment liquid, a cleaning liquid is injected onto the object to be treated.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3135301A JP3038449B2 (en) | 1991-05-13 | 1991-05-13 | Cleaning method and cleaning device |
US07/880,068 US5488964A (en) | 1991-05-08 | 1992-05-07 | Washing apparatus, and washing method |
KR1019920007937A KR0175072B1 (en) | 1991-05-08 | 1992-05-08 | Washing apparatus and washing method |
US08/560,708 US5671764A (en) | 1991-05-08 | 1995-11-20 | Washing apparatus, and washing method |
US08/743,836 US5887604A (en) | 1991-05-08 | 1996-11-05 | Washing apparatus, and washing method |
US08/789,537 US5782990A (en) | 1991-05-08 | 1997-01-27 | Method for washing objects |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3135301A JP3038449B2 (en) | 1991-05-13 | 1991-05-13 | Cleaning method and cleaning device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04336430A true JPH04336430A (en) | 1992-11-24 |
JP3038449B2 JP3038449B2 (en) | 2000-05-08 |
Family
ID=15148510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3135301A Expired - Lifetime JP3038449B2 (en) | 1991-05-08 | 1991-05-13 | Cleaning method and cleaning device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3038449B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09221484A (en) * | 1996-02-14 | 1997-08-26 | Kikkoman Corp | Production of proanthocyanidin |
US5785068A (en) * | 1995-05-11 | 1998-07-28 | Dainippon Screen Mfg. Co., Ltd. | Substrate spin cleaning apparatus |
JP2000286220A (en) * | 1999-01-29 | 2000-10-13 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
JP2000308857A (en) * | 1999-04-27 | 2000-11-07 | Tokyo Electron Ltd | Method and device for liquid treatment |
JP2001189297A (en) * | 1999-12-28 | 2001-07-10 | Nec Corp | Method and device for cleaning wafer |
JP2016208024A (en) * | 2015-04-15 | 2016-12-08 | 株式会社半導体エネルギー研究所 | Electrode and method of manufacturing semiconductor device |
-
1991
- 1991-05-13 JP JP3135301A patent/JP3038449B2/en not_active Expired - Lifetime
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5785068A (en) * | 1995-05-11 | 1998-07-28 | Dainippon Screen Mfg. Co., Ltd. | Substrate spin cleaning apparatus |
JPH09221484A (en) * | 1996-02-14 | 1997-08-26 | Kikkoman Corp | Production of proanthocyanidin |
JP2000286220A (en) * | 1999-01-29 | 2000-10-13 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
JP2000308857A (en) * | 1999-04-27 | 2000-11-07 | Tokyo Electron Ltd | Method and device for liquid treatment |
JP2001189297A (en) * | 1999-12-28 | 2001-07-10 | Nec Corp | Method and device for cleaning wafer |
JP2016208024A (en) * | 2015-04-15 | 2016-12-08 | 株式会社半導体エネルギー研究所 | Electrode and method of manufacturing semiconductor device |
US11004727B2 (en) | 2015-04-15 | 2021-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
US11791201B2 (en) | 2015-04-15 | 2023-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP3038449B2 (en) | 2000-05-08 |
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