JPH0328069B2 - - Google Patents
Info
- Publication number
- JPH0328069B2 JPH0328069B2 JP56098557A JP9855781A JPH0328069B2 JP H0328069 B2 JPH0328069 B2 JP H0328069B2 JP 56098557 A JP56098557 A JP 56098557A JP 9855781 A JP9855781 A JP 9855781A JP H0328069 B2 JPH0328069 B2 JP H0328069B2
- Authority
- JP
- Japan
- Prior art keywords
- fuse
- molybdenum
- semiconductor device
- wiring
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005520 cutting process Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 25
- 229910052750 molybdenum Inorganic materials 0.000 description 25
- 239000011733 molybdenum Substances 0.000 description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9855781A JPS58157A (ja) | 1981-06-25 | 1981-06-25 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9855781A JPS58157A (ja) | 1981-06-25 | 1981-06-25 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58157A JPS58157A (ja) | 1983-01-05 |
| JPH0328069B2 true JPH0328069B2 (de) | 1991-04-17 |
Family
ID=14222986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9855781A Granted JPS58157A (ja) | 1981-06-25 | 1981-06-25 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58157A (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4924287A (en) * | 1985-01-20 | 1990-05-08 | Avner Pdahtzur | Personalizable CMOS gate array device and technique |
| US4792835A (en) * | 1986-12-05 | 1988-12-20 | Texas Instruments Incorporated | MOS programmable memories using a metal fuse link and process for making the same |
| US4826785A (en) * | 1987-01-27 | 1989-05-02 | Inmos Corporation | Metallic fuse with optically absorptive layer |
| IL82113A (en) * | 1987-04-05 | 1992-08-18 | Zvi Orbach | Fabrication of customized integrated circuits |
| US7817455B2 (en) * | 2005-08-31 | 2010-10-19 | International Business Machines Corporation | Random access electrically programmable e-fuse ROM |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57139958A (en) * | 1981-02-23 | 1982-08-30 | Seiko Instr & Electronics Ltd | Fuse type non-volatile memory |
-
1981
- 1981-06-25 JP JP9855781A patent/JPS58157A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57139958A (en) * | 1981-02-23 | 1982-08-30 | Seiko Instr & Electronics Ltd | Fuse type non-volatile memory |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58157A (ja) | 1983-01-05 |
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