JPH03280440A - Molding of semiconductor device using resin - Google Patents
Molding of semiconductor device using resinInfo
- Publication number
- JPH03280440A JPH03280440A JP7867890A JP7867890A JPH03280440A JP H03280440 A JPH03280440 A JP H03280440A JP 7867890 A JP7867890 A JP 7867890A JP 7867890 A JP7867890 A JP 7867890A JP H03280440 A JPH03280440 A JP H03280440A
- Authority
- JP
- Japan
- Prior art keywords
- pot
- resin
- heated
- heating temperature
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 22
- 239000011347 resin Substances 0.000 title claims abstract description 22
- 238000000465 moulding Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 239000012778 molding material Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 abstract description 8
- 229920000647 polyepoxide Polymers 0.000 abstract description 8
- 238000005243 fluidization Methods 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract 2
- 239000011800 void material Substances 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 6
- 238000001721 transfer moulding Methods 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/72—Heating or cooling
- B29C45/73—Heating or cooling of the mould
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/02—Transfer moulding, i.e. transferring the required volume of moulding material by a plunger from a "shot" cavity into a mould cavity
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、熱硬化性樹脂を用いた半導体装置の成型方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for molding a semiconductor device using a thermosetting resin.
[従来の技術]
半導体装置は、周知のように集積回路が形成された半導
体チップの電極と、これに対応したリードフレームの各
インナリードとを接続し、ついで各リードの先端部で形
成されたアウタリードを残して成型機により熱硬化性樹
脂で一体的に成型する。そして成型された樹脂パッケー
ジの外側において各リードを切断し、必要に応じてリー
ドを適宜折曲げて半導体装置を製造している。[Prior Art] As is well known, in a semiconductor device, an electrode of a semiconductor chip on which an integrated circuit is formed is connected to each inner lead of a corresponding lead frame, and then an inner lead formed at the tip of each lead is connected. It is integrally molded with thermosetting resin using a molding machine, leaving the outer lead intact. Then, each lead is cut on the outside of the molded resin package, and the leads are appropriately bent as necessary to manufacture a semiconductor device.
第2図は半導体装置を封止するトランスファ成型機の一
例を示す模式図、第3図はそのA−A断面図である。図
において、(1)、 (2)は半導体装置を封止する形
状の凹部(3)が形成された上金型及び下金型、(4)
は上下の金型(1)、(2)に設けられた主ランナ、(
5)は主ランナ(4)と四部(3)とを連通ずる枝ラン
ナである。(6)はポットでプランジャ(7)が挿入さ
れており、下部にはカル(8)が形成されている。(1
0)、(11)は上下の金型(1)。FIG. 2 is a schematic diagram showing an example of a transfer molding machine for sealing a semiconductor device, and FIG. 3 is a sectional view taken along line A-A. In the figure, (1) and (2) are an upper mold and a lower mold in which a recess (3) shaped to seal a semiconductor device is formed, and (4)
are the main runners installed in the upper and lower molds (1) and (2), (
5) is a branch runner that communicates the main runner (4) with the fourth part (3). (6) is a pot into which a plunger (7) is inserted, and a cull (8) is formed at the bottom. (1
0) and (11) are the upper and lower molds (1).
(2)を加熱するヒータ、(12)はポット(6)と各
主ランナ(4)を連通する通路である。(2) is a heater for heating, and (12) is a passageway that communicates the pot (6) with each main runner (4).
次に、上記のように構成したトランスファ成型機の作用
を説明する。先ず、上金型(1)を開放して下金型(2
)の凹部にそれぞれ未封止の半導体装置を配設し、上金
型(1)を閉じる。次に粉末成型材料又は固形成型材料
からなる熱硬化性樹脂を例えば80℃程度にプレヒート
してポット(6)に投入する。このとき、ポット(6)
、上下の金型(I)。Next, the operation of the transfer molding machine configured as described above will be explained. First, open the upper mold (1) and open the lower mold (2).
), and the upper mold (1) is closed. Next, a thermosetting resin consisting of a powder molding material or a solid molding material is preheated to, for example, about 80° C. and placed in the pot (6). At this time, pot (6)
, upper and lower molds (I).
(2)、上下の金型(1)、 (2)に形成された凹部
(3)及び主ランナ(4)等は、ヒータ(10)、(1
1)によりほぼ175℃に加熱されている。ついで時間
すでプランジャ(7)を圧下してポット(6)内で溶融
状態にある樹脂を、通路(12)、主ランナ(4)、枝
ランナ(5)を経て各凹部(3)に送り出し、半導体装
置を封止する。(2), the recess (3) formed in the upper and lower molds (1), (2), the main runner (4), etc.
1) is heated to approximately 175°C. Then, the plunger (7) is pressed down to send the resin, which is already molten in the pot (6), to each recess (3) through the passage (12), the main runner (4), and the branch runner (5). , sealing the semiconductor device.
作業が終ったときは上金型(1)を開放し、封止された
各半導体装置を取り出す。なお、半導体装置の封止部の
形状及び大きさは種々あるので、仕様が異なる場合はそ
れに対応した金型と交換する。When the work is finished, the upper mold (1) is opened and each sealed semiconductor device is taken out. Note that there are various shapes and sizes of the sealing portion of the semiconductor device, so if the specifications are different, replace the mold with a corresponding mold.
[発明が解決しようとする課題]
半導体装置の封止には各種の熱硬化性樹脂が使用されて
いるが、最も広く使用されているエポキシ樹脂の粘度と
時間との関係をみると第4図の通りで、Aの曲線は17
5℃に加熱した場合、Bの曲線は165℃に加熱した場
合の粘度を示す。なお、エポキシ樹脂又はほぼ100〜
130℃で溶融状態になる。[Problems to be Solved by the Invention] Various thermosetting resins are used for encapsulating semiconductor devices, and the relationship between the viscosity and time of the most widely used epoxy resin is shown in Figure 4. The curve of A is 17
When heated to 5°C, curve B shows the viscosity when heated to 165°C. In addition, epoxy resin or approximately 100~
It becomes molten at 130°C.
前述のように従来のトランスファ成型機は全体を同じ温
度でほぼ175℃に加熱している。このため、第4図か
ら導かれた第5図に示すように、エポキシ樹脂は時間a
で溶融状態になり、流動化が進んだす、c間で注入され
る。そして注入されたエポキシ樹脂は時間dから硬化を
はじめる。As mentioned above, the conventional transfer molding machine heats the entire machine at the same temperature of approximately 175°C. Therefore, as shown in FIG. 5 derived from FIG. 4, the epoxy resin
It becomes molten at , and is injected between step and c after fluidization has progressed. The injected epoxy resin then begins to harden at time d.
このような成型方法では、成型材料の特性や成型機の条
件により成型状態や成型性が著しく変化するため、従来
は成型材料のプレヒートの時間や注入スピード等を調整
してモールドの成型性を制御していた。しかしながら、
最近の半導体装置は、多ビン化、超多ビン化あるいは大
型化が進んでいるため、これに伴なって充填時間が短か
いために生じる未充填、ボイド、ワイヤ流れなどの不具
合が増加している。In such molding methods, the molding condition and moldability change significantly depending on the characteristics of the molding material and the conditions of the molding machine, so conventionally the moldability was controlled by adjusting the preheating time and injection speed of the molding material. Was. however,
Recent semiconductor devices are becoming larger, with more bins, ultra-multibins, or larger sizes, which has led to an increase in problems such as unfilled, voided, and wire drift caused by short filling times. There is.
本発明は、上記の課題を解決すべくなされたもので、成
型性がよく、未充填、ボイド、ワイヤ流れなどが発生す
るおそれがない半導体装置の成型方法を得ることを目的
としたものである。The present invention has been made to solve the above-mentioned problems, and aims to provide a method for molding a semiconductor device that has good moldability and is free from the risk of unfilling, voids, wire flow, etc. .
[課題を解決するための手段]
本発明に係る樹脂による半導体装置の成型方法は、プレ
ヒートされた成型材料が投入されるポットと、該ポット
から圧送された流動状態の成型材料が通過するランナと
、封止される半導体装置が配設され前記ランナから分岐
した成型材料が注入される複数の四部を備えた金型と、
前記ポット、ランナ及び金型を加熱する手段とからなる
成型機により前記半導体装置を樹脂で封止する装置にお
いて、前記ランナの加熱温度を前記ポットの加熱温度よ
り低い温度に制御すると共に、前記金型の加熱温度を前
記ランナの加熱温度より高い温度に制御するようにした
ものである。[Means for Solving the Problems] A method for molding a semiconductor device using resin according to the present invention includes a pot into which preheated molding material is introduced, and a runner through which fluidized molding material pumped from the pot passes. a mold having a plurality of four parts in which a semiconductor device to be encapsulated is disposed and a molding material branched from the runner is injected;
In an apparatus for sealing the semiconductor device with a resin using a molding machine comprising a pot, a runner, and a means for heating the mold, the heating temperature of the runner is controlled to be lower than the heating temperature of the pot, and The heating temperature of the mold is controlled to be higher than the heating temperature of the runner.
[実施例]
第1図は本発明の詳細な説明するための線図で、以下第
2図、第3図を参照して本発明を説明する。本発明にお
いては、成型機のヒータ(10)。[Example] FIG. 1 is a diagram for explaining the present invention in detail, and the present invention will be explained below with reference to FIGS. 2 and 3. In the present invention, a heater (10) of a molding machine.
(11)による加熱温度を、ポット(6)は従来通り(
例えば175℃)、ランナ(4)の部分はこれより低い
温度(例えば165〜170℃)、そして上下の金型(
1)、(2)はこれより高い温度(例えば175℃〜1
80℃)で加熱するようにしたものである。(11), the pot (6) is heated as before (
For example, 175℃), the runner (4) part has a lower temperature (for example, 165-170℃), and the upper and lower molds (
1) and (2) are at higher temperatures (e.g. 175°C to 1
80°C).
いま、例えば80℃にプレヒートされたエポキシ樹脂を
ポット(6)に投入すると、樹脂はヒータ(to)、(
11)で例えば175℃に加熱され、時間aで溶融状態
になる。そして流動化の進んだ時間すでプランジャ(7
)を圧下し、ポット(6)内の溶融樹脂を通路(12)
を介してランナ(4)へ圧送す“る。このとき、ランナ
(4)はポット(6)より低い温度(例えば165〜1
70℃)で加熱されているため、樹脂の溶融状態は第1
図の曲線のように変化し、はぼ最低粘度に近い状態が持
続する。この結果、上下の金型(1) 、 (2)の凹
部(3)への樹脂の注入を時間をかけてスムーズに行な
うことができる。上下の金型(1) 、 (2)の加熱
温度は再び高く (例えば170〜180℃)設定され
ているため、時間fで硬化を始める。Now, for example, when epoxy resin preheated to 80°C is put into the pot (6), the resin is heated to the heater (to), (
11), it is heated to, for example, 175° C., and becomes molten at time a. And when the fluidization is advanced, the plunger (7
) to direct the molten resin in the pot (6) to the passage (12).
The runner (4) is fed under pressure to the runner (4) through the pot (6).
70℃), the molten state of the resin is
The viscosity changes as shown in the curve in the figure, and the viscosity remains close to the lowest viscosity. As a result, resin can be smoothly injected into the recesses (3) of the upper and lower molds (1) and (2) over time. Since the heating temperature of the upper and lower molds (1) and (2) is again set high (for example, 170 to 180°C), curing starts at time f.
このように、本発明においてはランナ(4)の温度を低
く設定したので低粘度状態を長時間保持することができ
、したがって成型時間を延長することができる。In this way, in the present invention, since the temperature of the runner (4) is set low, a low viscosity state can be maintained for a long time, and therefore the molding time can be extended.
上記の説明ではエポキシ樹脂により半導体装置を封止す
る場合を示したが、その他の樹脂を使用する場合も、上
述の実施例と同様にランナ部分の加熱温度をポット部分
の温度より低く制御し、金型部分の温度をランナ部分の
温度より高く制御することにより、成型性のよい半導体
装置の封止を実現することができる。The above explanation shows the case where the semiconductor device is sealed with epoxy resin, but when using other resins, the heating temperature of the runner part is controlled to be lower than the temperature of the pot part, as in the above embodiment, and By controlling the temperature of the mold portion to be higher than the temperature of the runner portion, it is possible to seal the semiconductor device with good moldability.
[発明の効果]
以上詳記したように、本発明はトランスファ成型機によ
り半導体装置を封止する工程において、ランナの加熱温
度をポットの加熱温度より低い温度に制御すると共に、
金型の温度をランナの加熱温度より高い温度に制御し、
成型材料の低粘度状態を長時間保持するようにしたので
、成型材料の金型への注入を時間をかけてスムーズに行
なうことができる。このため、未充填、ボイドあるいは
ワイヤ流れなどが発生するおそれがなく、成型性のよい
半導体装置の成型方法を得ることができる。[Effects of the Invention] As detailed above, the present invention controls the heating temperature of the runner to be lower than the heating temperature of the pot in the process of sealing a semiconductor device using a transfer molding machine, and
The temperature of the mold is controlled to be higher than the heating temperature of the runner,
Since the molding material is kept in a low viscosity state for a long time, the molding material can be smoothly injected into the mold over time. Therefore, it is possible to obtain a method for molding a semiconductor device with good moldability without the possibility of occurrence of unfilling, voids, wire flow, or the like.
第1図は本発明を説明するための線図、第2図は本発明
を実施するトランスファ成型機の模式図、第3図はその
A−A断面図、第4図はエポキシ樹脂の加熱温度に対す
る粘度と時間との関係を示す線図、第5図は従来の成型
材料の注入を説明するための線図である。
(1)二上金型、(2):下金型、(3):凹部、(4
)・ランナ、(6):ポット、(7)ニブランジャ、(
10)、(11) :ヒータ。Fig. 1 is a diagram for explaining the present invention, Fig. 2 is a schematic diagram of a transfer molding machine implementing the present invention, Fig. 3 is a sectional view taken along line A-A, and Fig. 4 is a heating temperature of epoxy resin. FIG. 5 is a diagram showing the relationship between viscosity and time, and FIG. 5 is a diagram for explaining conventional injection of molding material. (1) Upper mold, (2): Lower mold, (3): Recess, (4
)・Ranna, (6): Pot, (7) Nibranja, (
10), (11): Heater.
Claims (1)
ポットから圧送された流動状態の成型材料が通過するラ
ンナと、封止される半導体装置が配設され前記ランナか
ら分岐した成型材料が注入される複数の凹部を備えた金
型と、前記ポット、ランナ及び金型を加熱する手段とか
らなる成型機により前記半導体装置を樹脂で封止する装
置において、 前記ランナの加熱温度を前記ポットの加熱温度より低い
温度に制御すると共に、前記金型の加熱温度を前記ラン
ナの加熱温度より高い温度に制御することを特徴とする
樹脂による半導体装置の成型方法。[Claims] A pot into which preheated molding material is charged, a runner through which fluidized molding material pressure-fed from the pot passes, and a semiconductor device to be sealed is arranged and branched from the runner. In an apparatus for sealing the semiconductor device with a resin using a molding machine comprising a mold having a plurality of recesses into which molding material is injected, and means for heating the pot, runner, and mold, the heating temperature of the runner is A method for molding a semiconductor device using resin, characterized in that the heating temperature of the mold is controlled to be lower than the heating temperature of the pot, and the heating temperature of the mold is controlled to be higher than the heating temperature of the runner.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7867890A JPH03280440A (en) | 1990-03-29 | 1990-03-29 | Molding of semiconductor device using resin |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7867890A JPH03280440A (en) | 1990-03-29 | 1990-03-29 | Molding of semiconductor device using resin |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03280440A true JPH03280440A (en) | 1991-12-11 |
Family
ID=13668534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7867890A Pending JPH03280440A (en) | 1990-03-29 | 1990-03-29 | Molding of semiconductor device using resin |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03280440A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012061800A (en) * | 2010-09-17 | 2012-03-29 | Nec Corp | Injection molding method for thermosetting resin |
-
1990
- 1990-03-29 JP JP7867890A patent/JPH03280440A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012061800A (en) * | 2010-09-17 | 2012-03-29 | Nec Corp | Injection molding method for thermosetting resin |
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