JPH03274720A - Formation of semiconductor device - Google Patents

Abstract

PURPOSE:To improve adhesion of a resist and to facilitate formation of a desired pattern on a semiconductor substrate surface with high accuracy and no problems by forming a damage layer on a surface of an insulating film. CONSTITUTION:An insulating film 2 is formed on a semiconductor substrate 1. A damage layer 3 is formed on a surface layer of the insulating film 2 through ion implantation. Then, a photoresist film 4 is applied to form a desired resist pattern 41. In the process, adhesion of the resist pattern 41 is improved by the damage layer 3 formed on a surface of the insulating film 2; therefore, problems such as floating and peeling of the resist pattern 41 do not occure. Lastly, the insulating film 2 is processed to acquire a desired pattern 5 using the resist pattern 41 as a mask.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for forming a semiconductor device that improves the adhesion of a resist pattern when forming a resist pattern on an insulating film on a semiconductor substrate. It is something.

[Conventional technology]

FIG. 3 is a cross-sectional view of a manufacturing process showing a conventional method of forming a resist pattern for a semiconductor device. In the figure, (1) is a semiconductor substrate, (2) is an insulating film formed on the semiconductor substrate (1), and +4) is a pattern (+4) on the insulating film (2).
5) is a photoresist for forming.

Next, the manufacturing process will be explained.

In the semiconductor process, it is common to run the process by covering the surface of the semiconductor substrate (11) with an insulating film (2) to protect it from contamination and dust.

Next, in order to process the insulating film (2), a resist pattern (41) is formed ((Fig.
C) Diagram).

In the next step, processing is performed using the resist pattern (41) as a mask material to form a desired pattern (5) on the surface of the semiconductor substrate (1). (Figure (d)) [Problems to be Solved by the Invention] In the conventional method of forming resist patterns for semiconductor devices, the resist pattern was formed as described above. The adsorbed HtO is formed as a multi-molecular layer, and when a photoresist is applied in this state to form a resist pattern, adhesion occurs due to hydrogen bonds between the OH groups of the resist and the Hz0 on the surface, and the resist The adhesiveness of the resist decreases, causing problems such as lifting and peeling of the resist pattern, and in this state, it becomes impossible to process the resist as a masking material in the next process. There was a problem.

This invention was made in order to solve the above-mentioned problems.This invention improves the adhesion of the resist by modifying the surface of the insulating film, forms a resist pattern, and uses it as a mask. The purpose is to make it possible to process a desired pattern on the surface of a substrate as a material.

(Means for Solving llfl) In the method for forming a semiconductor device according to the present invention, after forming an insulating film on the surface of a semiconductor substrate, for example, ion implantation is performed to improve resist adhesion to the surface layer of the insulating film. The damaged layer is formed by a method.

[Effect]

In the method for forming a semiconductor device according to the present invention, a damaged layer is formed on the surface layer of an insulating film by ion implantation, and this damaged layer improves the adhesion of the resist and prevents the occurrence of resist pattern peeling. It becomes possible to process a desired pattern on the surface of a substrate as a masking material.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, (1) is a semiconductor substrate, (2) is an insulating film, (
3) is a damaged layer formed on the surface layer of the insulating film (2), (
4) is a photoresist, and (5) is a desired pattern formed.

Next, the manufacturing process will be explained. As in the conventional case, an insulating ill 121 is formed on the semiconductor substrate (11 (Figure (a)). Next, ions are implanted into the surface layer of the insulating layer 1a (2) to form a damaged layer (3). Cb
Figure 1).

Next, apply a photoresist (4) film (Figure C).
A desired resist pattern (41) is formed. On this occasion,
The adhesion of the resist pattern (41) is improved by the effect of the damage layer (3) formed on the surface of the insulating film (2), and problems such as lifting and peeling of the resist pattern (41) do not occur. Finally, the resist pattern (41)
Using as a mask, the insulating film (2) is processed to obtain a desired pattern (5).

In particular, FIG. 2 shows the cases in which a damaged layer (3) is formed on the surface of the insulating layer 121 and the cases in which it is not formed, as well as the relationship between the damaged layer (3) and the adhesion strength. In the figure, the vertical axis represents the contact angle of a water droplet, which indicates the state of the wafer surface (hydrophilic or dihydrophobic). Generally, the larger the contact angle, the more hydrophobic the resist will be, and the stronger the adhesion of the resist will be, and vice versa, if the contact angle is smaller. Therefore, the contact angle and the magnitude of the adhesive force of the resist are in a proportional relationship. Further, the horizontal axis represents the ion implantation energy, which also represents the magnitude of damage to the damaged layer, so there is a proportional relationship. In the figure, when ion implantation is not performed and when it is performed,
A large difference can be seen in the contact angle of the surfaces.

This indicates that the adhesion of the resist is improved when a damaged layer is formed on the surface.

In addition, in the above embodiment, the method of forming the damaged layer (3) on the surface of the insulating film (2) was explained using the ion implantation method. be effective.

Further, in the above embodiments, the case where processing is performed using a resist pattern as a mask has been described, but the same effect can be obtained even if the present invention is applied to other processes such as ion implantation, electrode formation, etc.

〔Effect of the invention〕

As described above, according to the present invention, by forming a damaged layer on the surface of an insulating film, it is possible to improve the adhesion of the resist, and a desired pattern can be formed on the surface of a semiconductor substrate with high precision and without problems. This makes it possible to obtain high-quality semiconductor devices in large quantities.

[Brief explanation of drawings]

Figures 1+al to (e) are manufacturing process cross-sectional views showing a method for forming a semiconductor device according to an embodiment of the present invention, and Figure 2 is a surface contact angle showing the adhesive strength of the resist of the present invention and the strength of the damaged layer. FIG. 3 is a graph showing the relationship between the implantation energy of ion implantation and FIG. 3 is a cross-sectional view of the manufacturing process showing a conventional method for forming a semiconductor device. In the figure, (1) is a semiconductor substrate, (2) is an insulating film, (3) is a damaged layer, (4) is a photoresist, (41) is a resist pattern, and (5) is a processed pattern. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

[Claims] After forming a resist pattern on an insulating film on a semiconductor substrate, in a process of using the resist pattern as a mask material, a damaged layer is formed on the surface of the insulating film to improve the adhesion of the resist pattern. 1. A method for forming a semiconductor device, characterized by improving the ability to form a desired pattern.