JPH01123452A - Formation of trench capacitor insulating film - Google Patents
Formation of trench capacitor insulating filmInfo
- Publication number
- JPH01123452A JPH01123452A JP28161287A JP28161287A JPH01123452A JP H01123452 A JPH01123452 A JP H01123452A JP 28161287 A JP28161287 A JP 28161287A JP 28161287 A JP28161287 A JP 28161287A JP H01123452 A JPH01123452 A JP H01123452A
- Authority
- JP
- Japan
- Prior art keywords
- trench
- thermal oxidation
- insulating film
- upper corner
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims description 13
- 230000015572 biosynthetic process Effects 0.000 title 1
- 230000003647 oxidation Effects 0.000 claims abstract description 23
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- -1 oxygen ions Chemical class 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 12
- 238000002513 implantation Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 abstract 6
- 239000010409 thin film Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000007800 oxidant agent Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
この発明は、トレンチが形成された半導体基板上に熱酸
化を施して絶縁膜を形成する、トレンチ・キャパシタ絶
縁膜の生成方法に関するものであり、特に、均一な酸化
膜の生成ができるとともに、酸化膜の耐圧性を向上させ
ることのできるトレンチ・キャパシタ絶縁膜の生成方法
に関するものである。[Detailed Description of the Invention] [Industrial Field of Application] This invention relates to a method for producing a trench capacitor insulating film, in which an insulating film is formed by thermal oxidation on a semiconductor substrate in which a trench is formed. In particular, the present invention relates to a method for producing a trench capacitor insulating film that can produce a uniform oxide film and improve the voltage resistance of the oxide film.
［従来の技術］
第２Ａ図および第２Ｂ図は、従来のトレンチ・キャパシ
タ絶縁膜の生成方法を示す工程図であり、断面図で表わ
されている。[Prior Art] FIGS. 2A and 2B are process diagrams showing a conventional method for producing a trench capacitor insulating film, and are shown in cross-sectional views.
半導体基板たとえばシリコン基板１に、反応性イオンエ
ツチング（以下ＲＩＥという）を施し、トレンチを形成
する（第２Ａ図）。次いで、上記トレンチ２が形成され
た半導体基板１を熱酸化炉（図示せず）中に導入し、該
半導体基板１上に熱酸化を施し、絶縁酸化膜３を生成す
る（第２Ｂ図）〔発明が解決しようとする問題点コ
従来のトレンチ・キャパシタ絶縁膜の生成方法は以上の
ような工程からなっている。しかしながら、シリコン基
板１に形成されたトレンチの熱酸化炉での酸化において
、トレンチ２の上方コーナ部２ａでは、圧縮応力の集中
により、酸化剤の供給が不充分になる。そのため、トレ
ンチ２の上方コーナ部２ａの酸化膜３の膜厚は薄くなる
。このように、酸化膜３が薄膜化すると、均一な膜厚の
酸化膜３が得られないばかりか、酸化膜３の耐圧性が低
下するという問題点があった。A semiconductor substrate, such as a silicon substrate 1, is subjected to reactive ion etching (hereinafter referred to as RIE) to form a trench (FIG. 2A). Next, the semiconductor substrate 1 with the trench 2 formed therein is introduced into a thermal oxidation furnace (not shown), and thermal oxidation is performed on the semiconductor substrate 1 to form an insulating oxide film 3 (FIG. 2B). Problems to be Solved by the Invention The conventional method for producing a trench capacitor insulating film consists of the steps described above. However, in the oxidation of the trench formed in the silicon substrate 1 in a thermal oxidation furnace, the supply of oxidizing agent becomes insufficient at the upper corner portion 2a of the trench 2 due to the concentration of compressive stress. Therefore, the thickness of the oxide film 3 at the upper corner portion 2a of the trench 2 becomes thinner. As described above, when the oxide film 3 is made thinner, there is a problem that not only the oxide film 3 having a uniform thickness cannot be obtained, but also the pressure resistance of the oxide film 3 decreases.
この発明は上記のような問題点を解決するためになされ
たもので、均一な酸化膜の生成かでべろとともに、酸化
膜の耐圧性を向上させることのできる、トレンチ・キャ
パシタ絶縁膜の生成方法を提供することを目的とする。This invention was made to solve the above-mentioned problems, and provides a method for forming a trench capacitor insulating film that can not only produce a uniform oxide film but also improve the voltage resistance of the oxide film. The purpose is to provide
［問題点を解決するための手段］ ′この発明
は、トレンチが形成された半導体基板上に熱酸化を施し
て絶縁膜を形成する、トレンチ・キャパシタ絶縁膜の生
成方法に係るものである。[Means for Solving the Problems] 'The present invention relates to a method for producing a trench capacitor insulating film, in which an insulating film is formed by performing thermal oxidation on a semiconductor substrate in which a trench is formed.
そして、上記熱酸化を施すに先立ち、上記トレンチの上
方コーナ部に酸素イオンを注入することを特徴とする。The method is characterized in that, prior to performing the thermal oxidation, oxygen ions are implanted into the upper corner portion of the trench.
［作用］
トレンチが形成された半導体基板上に熱酸化を施すに先
立ち、該トレンチの上方ｂ−す部に酸素イオンを注入す
るので、このトレンチ上方コーナ部に注入された酸素イ
オンが、トレンチの上方コーナ部の熱酸化時における、
酸化剤の供給不足を補う。[Operation] Prior to performing thermal oxidation on a semiconductor substrate on which a trench is formed, oxygen ions are implanted into the upper corner of the trench, so that the oxygen ions implanted into the upper corner of the trench are During thermal oxidation of the upper corner,
Make up for the lack of oxidizer supply.
［実施例］ 以下、この発明の一実施例を図について説明する。[Example] An embodiment of the present invention will be described below with reference to the drawings.
第１Ａ図およびｍ１８図は、この発明の一実施例である
トレンチ・キャパシタ絶縁膜の生成方法の工程の断面図
である。FIGS. 1A and 18 are cross-sectional views of steps in a method for producing a trench capacitor insulating film, which is an embodiment of the present invention.
半導体基板たとえばシリコン基板１に、ＲＩＥにより、
トレンチ２を形成する（第１Ａ図）。次いで、トレンチ
２およびトレンチ２近傍以外の部分を、選択的にレジス
ト４で覆う。次いで、このレジスト４をマスクにして、
酸素イオン５を斜め回転注入法により注入する。これに
より、トレンチ２の上方コーナ部２ａに酸素イオン５′
が注入される（第１Ｂ図）。On a semiconductor substrate, for example, a silicon substrate 1, by RIE,
A trench 2 is formed (FIG. 1A). Next, the trench 2 and the portions other than the vicinity of the trench 2 are selectively covered with a resist 4. Next, use this resist 4 as a mask,
Oxygen ions 5 are implanted by an oblique rotational implantation method. As a result, oxygen ions 5' are placed in the upper corner portion 2a of the trench 2.
is injected (Figure 1B).
その後、レジスト４を除去し、熱酸化炉中でシリコン基
板１上に熱酸化を施し、酸化膜３を生成する。この際、
トレンチ２の上方コーナ部２ａに酸化剤である酸素イオ
ン５′が注入法により注入されているので、熱酸化炉中
で熱酸化を行なうにあたり、酸化膜３のトレンチの上方
コーナ部２ａの酸化膜３が薄膜化することなく、均一な
膜厚を有する酸化膜３を生成することができる（第１Ｃ
図）。これにより半導体装置の電気的性能が向上するば
かりか、酸化膜３の耐圧性も向上する。Thereafter, the resist 4 is removed and thermal oxidation is performed on the silicon substrate 1 in a thermal oxidation furnace to form an oxide film 3. On this occasion,
Oxygen ions 5' as an oxidizing agent are implanted into the upper corner portion 2a of the trench 2 by the implantation method, so when performing thermal oxidation in the thermal oxidation furnace, the oxide film 3 is removed from the upper corner portion 2a of the trench. It is possible to generate an oxide film 3 having a uniform thickness without thinning the oxide film 3 (first C).
figure). This not only improves the electrical performance of the semiconductor device, but also improves the voltage resistance of the oxide film 3.
なお、上記実施例では半導体基板にシリコン半導体基板
を使用した場合について説明したが、この発明はこれに
限られるものでなく、Ｇａ−Ａｓ基板のような他の半導
体基板であっても・実施例と同様の効果を実現する。In addition, although the above embodiment describes the case where a silicon semiconductor substrate is used as the semiconductor substrate, the present invention is not limited to this, and even if other semiconductor substrates such as a Ga-As substrate are used. Achieve the same effect as .
また、上記実施例では、トレンチ２の上方コーナ部２ａ
に斜め回転注入法により酸素イオン５を注入する場合に
ついて説明したが、この発明はこれに限られるものでな
く、他の酸化方法であってもよい。Further, in the above embodiment, the upper corner portion 2a of the trench 2
Although the case where the oxygen ions 5 are implanted by the oblique rotational implantation method has been described, the present invention is not limited to this, and other oxidation methods may be used.
［発明の効果］
以上説明したとおり、この発明に係るトレンチφキャパ
シタ絶縁膜の生成方法によれば、トレンチが形成された
半導体基板上に熱酸化を施すに先立ち、該トレンチの上
方コーナ部に酸素イオンを注入するようにしたので、こ
の注入された酸素イオンが、トレンチの上方コーナ部の
熱酸化時における、酸化剤の供給不足を補うように作用
する。[Effects of the Invention] As explained above, according to the method for producing a trench φ capacitor insulating film according to the present invention, before performing thermal oxidation on the semiconductor substrate on which the trench is formed, oxygen is added to the upper corner of the trench. Since ions are implanted, the implanted oxygen ions act to compensate for the insufficient supply of oxidizing agent during thermal oxidation of the upper corner of the trench.
そのため、その後の熱酸化にあたり、抱−な膜厚の酸化
膜が得られるようになり、半導体装置の電気的性能が向
上する。また、酸化膜の耐圧性を向上させるという効果
を奏する。Therefore, in the subsequent thermal oxidation, an oxide film with a reasonable thickness can be obtained, and the electrical performance of the semiconductor device is improved. It also has the effect of improving the pressure resistance of the oxide film.
第１Ａ図、第１Ｂ図、第１Ｃ図はこの発明の一実施例に
よるトレンチ・キャパシタ絶縁膜の生成方法を断面図で
表わした工程図である。第２Ａ図および第２Ｂ図は従来
のトレンチ・キャパシタ絶縁膜の生成方法を断面図で表
わした工程図である。
図において、１はシリコン基板、２はトレンチ、３は酸
化膜、５は酸素イオン、５′は注入された酸素イオン、
２ａはトレンチの上方コーナ部である。
なお、各図中同一符号は同一または相当部分を示す。FIGS. 1A, 1B, and 1C are cross-sectional process diagrams showing a method for producing a trench capacitor insulating film according to an embodiment of the present invention. FIGS. 2A and 2B are cross-sectional process diagrams showing a conventional method for producing a trench capacitor insulating film. In the figure, 1 is a silicon substrate, 2 is a trench, 3 is an oxide film, 5 is an oxygen ion, 5' is an implanted oxygen ion,
2a is the upper corner portion of the trench. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
絶縁膜を形成する、トレンチ・キャパシタ絶縁膜の生成
方法において、 前記熱酸化を施すに先立ち、前記トレンチの上方コーナ
部に酸素イオンを注入することを特徴とするトレンチ・
キャパシタ絶縁膜の生成方法。[Claims] In a method for producing a trench capacitor insulating film, in which an insulating film is formed by performing thermal oxidation on a semiconductor substrate in which a trench is formed, prior to performing the thermal oxidation, an upper corner portion of the trench is trenches characterized by implanting oxygen ions into
How to generate capacitor insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28161287A JPH01123452A (en) | 1987-11-06 | 1987-11-06 | Formation of trench capacitor insulating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28161287A JPH01123452A (en) | 1987-11-06 | 1987-11-06 | Formation of trench capacitor insulating film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01123452A true JPH01123452A (en) | 1989-05-16 |
Family
ID=17641562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28161287A Pending JPH01123452A (en) | 1987-11-06 | 1987-11-06 | Formation of trench capacitor insulating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01123452A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5955804A (en) * | 1997-03-10 | 1999-09-21 | Denso Corporation | Alternator winding arrangement with coil ends spaced apart from one another for air passage |
| CN108225182A (en) * | 2018-01-08 | 2018-06-29 | 哈尔滨工程大学 | Reflective phase-shifted digital holographic apparatus and method based on light splitting pupil |
| CN114361010A (en) * | 2022-03-18 | 2022-04-15 | 广州粤芯半导体技术有限公司 | Method for manufacturing semiconductor device |
-
1987
- 1987-11-06 JP JP28161287A patent/JPH01123452A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5955804A (en) * | 1997-03-10 | 1999-09-21 | Denso Corporation | Alternator winding arrangement with coil ends spaced apart from one another for air passage |
| US6166461A (en) * | 1997-03-10 | 2000-12-26 | Denso Corporation | Winding arrangement of alternator for vehicle |
| CN108225182A (en) * | 2018-01-08 | 2018-06-29 | 哈尔滨工程大学 | Reflective phase-shifted digital holographic apparatus and method based on light splitting pupil |
| CN114361010A (en) * | 2022-03-18 | 2022-04-15 | 广州粤芯半导体技术有限公司 | Method for manufacturing semiconductor device |
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