JPH03272865A - Heat resistant insulation board and thermal head - Google Patents

Abstract

PURPOSE:To enhance rigidity, to reduce malfunction occurrence ratio and to prevent crack of a wear resistant layer of a heat resistant insulation board by forming a protective layer formed on a heat resistant layer by laminating a first amorphous silicon layer and a second amorphous silicon layer. CONSTITUTION:A heat resistant resin layer 2 made of polyimide resin, polyamideimide resin or mixture thereof or a laminate to be used as a heat accumulation layer and an insulating layer is formed on a metal board 1 of a thermal head, and a resin protective layer 3 is formed on the layer 2. The layer 3 is formed by laminating a first amorphous silicon layer containing at least one type of halogen and halogen and silicon as a base and a second amorphous silicon layer containing at least one type of hydrogen and halogen, at least one type of oxygen, nitrogen, and carbon, and silicon as a base. Since the first and second layers contains the hydrogen, halogen element, they are soft, strong to greatly improve the hardness of the entire insulation board. Even if a local deformation is applied to the surface layer, its crack can be prevented.

Description

[Detailed description of the invention]

[Object 1 of the Invention] (Field of Application of Industry-1) The present invention relates to a thermal head and
The present invention relates to heat-resistant insulating substrates used in multi-heads and various electronic devices. (Prior Art) Four-sided heat-resistant insulating substrates have been proposed in which a heat-resistant resin such as a follower vehicle polyimide resin is provided on various substrates with an insulating layer or the like. Such heat-resistant insulating substrates are suitable for heat-resistant materials such as high-resistance substrates for thermal heads and multilayer circuit boards for hybrid ICs.

[7] It is widely used as a support substrate for various electrical devices that require high reliability. For example, in thermal heads, ζ is used as a high-resistance machine for conventional ceramic substrates such as aluminum and glazed glass. Formation 19. The layer is a heat insulating layer that dissipates heat and stores heat i-:q > l-0. In Variant A, a heat-resistant insulating substrate is used, in which a heat-resistant resin layer such as polyimide resin is formed on a ceramic substrate or a metal substrate. A surf head in which such a polyimide resin layer is provided as a heat insulating layer has the following structure (i.e., a cut metal plate made of Fe alloy, etc.).
-, form a heat-resistant resin layer made of polyimide resin etc. that also serves as an insulating layer 12, and add 1゛a S to L of this heat-resistant resin waste
The heating resistor film made of IO2, Ti-8iO, etc. is λ
It is formed by a battering method or the like. Furthermore, individual electrodes and a common electrode made of Al, Aρ-5iCu, or the like are formed on this heating resistor. A region between the individual electrodes and the common electrode forms a heat generating region, and a wear-resistant layer is formed from silicon A gisitolite (Si0 to N)'8- to at least cover this heat generating region. This wear-resistant layer functions as an oxidation-resistant film in terms of '1'-n'L. This type of →normal head has a thermal diffusion rate of 3/1 to 1. compared to a conventional glazed glass layer. A polyimide resin layer with a low temperature of /6 is used as a heat retaining layer. Thermal efficiency is improved by both. In addition, by using a support substrate with flexibility such as a metal substrate, bending can be performed by using a support substrate that has flexibility, making it possible to create a compact, inexpensive, and high-performance 9S-Z. Luhe SoF',! = i-2telI [-'ll
has been done. The full head is...
In the manufacturing process ■7, I encountered the following F)iA problem. In other words, damage is caused to the heat-resistant resin waste during the etching process performed during the formation of the heating resistor and electrodes, and during the ashing of the masking film. In addition, when depositing the heat generating resistor material in a vacuum, gas is released from the polyimide resin layer, and the influence of this noise 1. Is it difficult to adjust the resistance value of the heating resistor?
Historically, when wiring using the wire bonding method, there was a problem in that it was difficult to attach the bottom Y-rings due to the elasticity of the polyimide resin. In order to solve the above problems, the present inventors first applied alumino, silicon oxynitrate, zair I': fluorine, etc. between the heat-resistant resin layer and the heating resistor chest εω. We proposed forming a resin protective layer made of inorganic insulators such as
Publication No.-21.428, patent application No. 1983. -154326, Japanese Patent Application No. 62-191. , No. 655). By forming a resin protective layer between the heat-resistant resin layer and the heating resistor layer in this way, it is possible to prevent damage to the polyimide resin layer and damage to the polyimide resin layer during the manufacturing process. In addition, the overall rigidity is increased.By forming a resin protective layer between the heat-resistant resin layer and the heat-generating resistor, thermal As a high resistance base of the throat 5
Not only can it be used in other electrical appliances, but it can also be used in other electrical appliances. )
As an absolute WM board, if used, electrical components will be mounted.
The effect of J-equipment when doing this is that it is stable and can be carried out! what to do (Problems to be solved and attempted by the invention) As mentioned above. 4-Install a resin protective layer made from inorganic insulators such as aluminum (-, silicone/Ogin J-[・Ride, →Neuron, etc.) on top of a heat-resistant resin layer such as polyimide resin. Heat-resistant insulating substrates can be used, for example, as full-head high-resistance substrates (2). The film strength is determined by 1, and 1.
I have discovered new problems to show. In other words, when the inventor of the present application incorporated the 1+J-=zlupa\node having the resin protective layer described above into a printer, when he actually conducted a printing test, he found that there were no differences during the test. A slight change in the resistance value was observed, and a phenomenon of 4° was observed that had an adverse effect on the mark '7'. We investigated this in detail and found out whether there was a foreign object such as a goni that had gotten between the Rimal T＼T F and the thermal paper or between the thermal paper and the platen roller. -4 that is, the crack is a cow (, s V
It was found that this crack or heat generation adversely affected the printing characteristics when reaching outside the mine. Formation of a glaze glass layer on a high-resistance substrate ＼Also, a high-resistance sacrificial body with a glass layer formed on a metal substrate was used.
This visual image “C exists. This is the gray scalar layer
In the case of a thermal head using a high-resistance substrate (4), the entire high-resistance substrate has a large amount of sand and dirt, and even if local pressure is applied to the wear-resistant layer by the oil, the wear-resistant layer or the high-resistance substrate may be damaged. ] In order to prevent local deformation from occurring, local deformation is inhibited, and as mentioned above, it is considered that the rack is weak. On the other hand, in contrast,・) In the case of a high-resistance substrate using a heat-resistant resin layer 8., the above-mentioned j. Although the rigidity of the high-resistance base is increased to some extent due to the resin protective layer), due to the deformation of the polyimide resin or the fact that the N is lower than the wear-resistant R layer (7), there is local concentration of stiffness in the wear-resistant layer. This is because the deformation of the heat-resistant resin layer can only be prevented by a resin protective layer or wear-resistant layer when the heat-resistant resin layer is deformed.
I can't help but think about the deformation and the cracks coming up in the near future. By the way, in order to prevent the deformation of the heat-resistant resin layer in the hemal head, it may be possible to prevent the deformation by increasing the thickness of the wear-resistant layer. However, in this method, the distance between the heating resistor and the thermal paper becomes large, which leads to a decrease in efficiency,
Not only does FJ have a significant drawback in terms of performance due to its low resolution, it also significantly reduces mass production.Such problems are not limited to thermal heads; for example, when making mistakes, As mentioned above, even in multilayer circuit boards for hybrid IDs, deformation of the heat-resistant resin layer during the mounting process can lead to disconnections, boarding defects, etc. in the wiring layer provided on top of the layer. ) There are some problems. , 4 Invention has been made in view of these conventional problems.
1-1 aims to provide an insulating board that reduces the occurrence of defects during the first mounting process by increasing the rigidity, and also to provide an insulating board that is resistant to defects during the first mounting process, etc. When printing with 11? Preventing the occurrence of cracks in the wear layer (7 and 12, -ζ can axis property I, Kise 2)
It is assumed that 1-t, -4 is to be applied to (1-t, -4) in (1-t,-4). The present invention for coupling one object +, i, g
(B') The heat-resistant insulating substrate has a heat-resistant layer formed on the heat-resistant (substrate that completely eliminates conductivity) -1, 2 substrates, J~,
The anti-erectile layer is shaped like I: J, and the layer is Y41-
, , the protective layer contains at least one base of halogen, a first amorphous silicon layer 35 having fir as a matrix, hydrogen, /) Contains 41 species, low in oxygen, nitrogen, and carbon 1 = +) 1
It is characterized in that it is laminated on a 2°-11 quality silicon layer having 3 seeds and having silicon as its matrix. In addition, the thermal conductivity of the invention or the thermal conductivity is a
a heat-resistant layer formed on the substrate, a protective layer formed on this heat-resistant layer-1, a heating resistor formed on this protective layer, and this heating resistor. -1, to)
Resistance 1? The abrasion layer is 6 L, 0 Tejian protection notification, 1q abrasion resistance at least t, -, 15- or hydrogen, /\"Ikenσ)・1〉, 2-1 also has one type 36' (2. The first j "crystalline sand layer and hydrogen, which is the silicon matrix,") \ "7) f
1' fA (both have one type A (11, f"1-1
) Oxygen, nitrogen 1. It is characterized by IFing the lamination of the second amorphous silicon layer 5! of carbon, J>f<, I-, one type of arj", silicon of 4J form, and 4-". ) The heat-resistant insulating substrate provided by the present invention has 1.1 of the outer layer,
shape! The hollow layer is formed by laminating a first (f) J1 quality silicon layer and a second (7) amorphous silicon layer. σ) First and second, 11. Quality d The raw layers contain hydrogen and 7 elements. Even if local deformation is applied to the surface layer, it is possible to prevent the occurrence of cracks. At least one of the protective layer formed on the soil of the heating resistor or the wear-resistant layer formed on the soil of the heating resistor is formed by laminating the first amorphous silicon layer and the second amorphous silicon layer. Similarly, in the case of 2, the first and second amorphous silicon layers contain hydrogen and 1 Ken element, and the hardness of the 10 thermal spatulas is 1 in the direction of the thick axis. Nisho 1wa-7
In the case where the pressure caused by the pressure caused by the local deformity is caused by the local deformity, it is possible to reliably prevent the onset of Clara 20 even by -C. In addition, since the amorphous silicon layer has a high film formation speed during film formation, it is possible to reduce costs. The thermal conductivity is smaller than that of the heating resistor or the headboard side.
It is possible to reduce the ineffective J-needle due to the heat flowing through the head, and to increase the efficiency of the Therma/L head. Furthermore, when comparing C) thermal conductivity at room temperature, Si3N4 or 2
0-29 W/Km, AIN is 60-2
00W/KmSSiC is 126 = 270W/
K m SA AC 203 is 20 W/' K m to 1
21, S i O,, is 6°2-10.4W/, m-
(Example) Hereinafter, referring to the drawings F, an embodiment according to the present invention will be explained in detail.
The metal substrate 1 is made of Fe-CI metal, etc., and is formed to a thickness of about C[,5tr+m. The thermal resin layer 2, which also serves as a layer, is made of polyamide resin, polyamideimide resin, or a mixture or laminate thereof, and has a thickness of 20 μm.
It is formed with a thickness of V'4Q. heat-resistant resin scraps 2
The soil has a resin barrier layer 3 with an IV diameter of 1 μm to 10 ft.
It is formed to a thickness of m. This resin protective layer contains at least one of hydrogen and halogen.
Yes1. a first amorphous silicon layer containing silicon as a matrix; hydrogen;
Contains at least one of the following: oxygen, nitrogen, and carbon; It is formed by laminating a 2.sigma.) amorphous silicon layer containing 1.degree. 4 That is, the resin protective layer 3 consists of a first amorphous silicon layer (C), a thin film whose main component is γ morsos (a)-5i, and a second (σ) amorphous h1 elemental layer. -8i
By laminating thin films containing 01a-5iC as the main component, one piece! 14 Physically, f, ia.
A-8i O is laminated 11, a-8iC is laminated to [-] of this a-5i O, and the film thickness of the resin protective layer 3 is set to a predetermined value lJ. This 11 will be described later - IZ] Departure! M.S.
Transfer of heat from the resistor to the metal substrate 10 direction ^ and towards the ribs 11. do. This resin protection 1 * 3, heat-resistant resin scraps -2 and 7, the planning board 1, and the "C heat-resistant insulating board 4" are made up. is T a-5i
Heat generating resistor 5 from O, , T x-8r, 02, etc.
Or is forming a ridge. In addition, the soil of the heating resistor 5 is made of Ag, Ai-Si-←U, etc.
An individual electrode 6 and a supporting electrode '7 of about -1, um are formed. The region between the individual electrodes 6 and the common electrode 7 forms a heat generating region, and when this heat generating region comes into contact with the thermal paper and reaches a coloring temperature of the thermal paper, the color develops. to form a printing straw. An adhesive layer 8 made of SlO2 is formed to cover at least this heat generating area.
ing. In addition, a wear-resistant layer 9 made of 5i-ON is formed on the upper side of the adhesive layer 8. This wear-resistant layer 9 functions as an oxidation-resistant film. The normal height shown in Figure 1 is as follows: Applying a pulse with a pulse width of r between the individual electrode 6 and the common electrode 7,
]: The heating resistor 5 in the heating area generates heat and is marked ';'
X self record or line t ↓ will be done. Next, refer to section ``...!'' Ward 1 [E<lte't ””””
”” ””? J-Kanzusan's explanation on the making of Ruhesoto. Ahead 4゛, Fe16 heavy ji as shown in Fig. 2 (・f) 4゛
l L? t]Cr n A predetermined 1
Cutting method I2, degreasing, cleaning, and drying in the atmosphere of the dried lk raw material 600'Y knee c[C',)''C
Perform all track processing. Next, apply varnish such as polyimide varnish or boria varnish to the gold substrate 1 soil shown in Fig. 2 (c+)''rlj.
t m = 30 lIm c)) A predetermined amount is applied so as to have a film thickness, dried and fired to form heat-resistant resin debris 2. Next, in FIG. 2(c), the surface of the heat-resistant resin layer 2 is cleaned 4. (continued in Figure 2), e.g., sputtering d1, f-ondying 15, -ding n2, vacuum evaporation, Zoramasma (]VD
method, ECR method, heat CV method,
A resin protective layer 3 is formed by optical CVD or the like. , T
However, in these methods, the adhesion of the film is improved by treatment at a specific axial low temperature c! r1 without impairing the properties of the substrate (7'), and 11- and the physical properties of the film, i.e. the electrical properties t'l.
? Optical features allow easy control and control! ! , (or 1
) Brassma CV' I) It is legal or treacherous. In particular, in the present invention, when polyimide resin is used in heat-resistant resin scrap-1 (.), (1, is - the heat-resistant temperature of polyimide resin used for boat fishing is 550 °C or higher) - (4
゛ζ′Because it is hard, this σ] At a low temperature below the heat-resistant temperature standard F
II Possible method or change of mind. This plasma 7CVD method is based on Si or plasma in the raw material gas.
．． τ5LH4 gas, SiF, gas, etc. are used, and the other component is N2 gas, N20 gas, 0. Gas, C■4 Menos, etc. are used. In this method, these gases are turned into plasma 7 in a vacuum, and a desired ceramic thin film is formed on the substrate 1-. When forming a thin film of %I-TC-C, hydrogen in the raw material gas and hydrogen, etc., are present in the film.
In this example, the amorphous state is kept stable due to the influence of these elements. ', According to the ship -6C1 Figure 3 shows the flat plate type capacitive viscosity 0 type whitebait CV
A heat-resistant insulating substrate 4 was prepared by film formation 7 on a resin protective layer 3 using a device D. In FIG. 3, there are electrodes 12 arranged in rows 12 and high frequency electrodes 1'3 or Place the processing substrate 14, a metal substrate formed with a heat-resistant resin shell, on the substrate 4.Next, the inside of the vacuum chamber 1 is evacuated to about 10 Torr using a vacuum pump (not shown).
2, the installed electrode 12 was heated to 1.50°C - 450°C.
Heat to degree C 1. Next, the raw material gas (1, -) was supplied from the gas inlet 10 into the vacuum chamber 11 at 0°5T. While evacuating air from the D hole 1'7 to maintain a vacuum level of about Ir.~1.0 Tor+, place a pine tree 1 on the high frequency electrode 13.
Via the switching box 18 (,"C high frequency power supply 19 or 10
) Turn on the power. This 1. 7J O"') between the electrodes, the D-group electric current (7) and the raw materials are increased to +7 (, the thin film to be applied to the processing substrate 14 is lf'/
Become φ゛ro. Here, the original vehicle 1 gas is 1. Later used 4 tsuru (.zuna #'-) 'l; a When forming a Sj thin film, N:i S lH4 gas #il u) , =>. In addition, a-5iNO thin [1 when forming a vague 4゛, - is 5iHa
Gas, N2 gas or NH, is used. :1;
In addition, when forming a thin film of a-5i←), for example, Si
Use H4 gas, N, and 0 gas. In addition, when forming a thin film of a-8iC, 311 gas and CH4 scum are used. .In this example, A-
When forming a thin film of 5i, l;i S 1. H4 cass'
During the formation of a-8iN thin film, S i H4 gas was supplied at 50 S CCM,
, , N 2 cuff, 5o c] S CCM , or S
iH4 gas 3 OS (' CM. NH, gas 11005CC supplied, A-8S i
When forming a thin film of O, SiH4Gano, 50SCCM
. N,0 gas supplied in 300 S CCM 17, a-5iC
O] When forming a thin film, 5iI44pjno, 50
SCCM. CH4 gas was supplied using a 00S CCM and the flow was carried out. Other conditions are vacuum pressure 1.0 Torr, high frequency power -
'3 r) OW, set the board temperature to 250℃. In addition, the film formation speed U is 1 (,1tt
m / clear space (-with, a-5iC thin film - 1.5t
tm/hour - ("18 Song Dynasty's Obatari: Film forming rate by ri method, for example, 400 (1
), production/hour, 50 C) of thin film of 5i-CF-N
(') A, y time (,'L comparison I. It was the time of the day). ρf and see Figure 2 Ql: (4) (In Figure 2 (e),
1-1, 1' of the resin protective layer '3 of the heat-resistant insulating substrate 4. A thin film of a heating resistor material such as O2 is formed. Next, in Figure 2 (to), AQ, A magazine-8i-Cu, or A IJ
A film is formed using an electrode material such as the following by a sputtering method or the like. 7. Next, in FIG. 2(G), a masking film for a desired circuit pattern is formed, for example, by chemical tri-etching, and the individual heating resistors 5, individual electrodes 6 and P, and current-carrying rods 7 are formed. form. Next, in FIG. 2(d), the adhesive layer 8 and S made of 5i02
A ml wear layer 9 made of i.--〇--N which also serves as an oxidation-resistant film is formed by the sputter link method or other known method to complete the thermal head. Next, in the first step of manufacturing the thermal head, the resin protective layer 3
The hardness of the hardness and the hardness of the wear-resistant layer 9, which is the surface curved layer, were measured and the results are explained below. First, apply resin protection It! on the heat-resistant resin layer 2. 3 and L-
By laminating a thin film of A-8i with a thickness of 0.34 m, a thin film of A-5iO, and a thin film of a-3iC with a thickness of 191' C1 and 3 μm, and changing the a-3iO film j9. , the entire film 1v is 1 μm, 211m, 3um, 4ums
Fig. 4 shows the hair ties whose nub hardness was measured at -) when set to 5 μm. As is clear from FIG. 4, the value of Knube hardness or the value of 7 is reached at approximately 2 ft m - 3 μm or more. It can also be seen that when the film thickness is 111 m or more, a sufficient Knoop hardness value of 1, -1, is not achieved. Next, using the heat-resistant insulating substrate 4 having the protective dust 3 having the respective film thicknesses described above, the heating resistor 5, the individual electrode 6, and the common electrode 7 are formed using the above-mentioned procedure 1. A thin film of SiO2 with a thickness l lt ITI as an adhesive layer, a thin film of aSi with a thickness of 5τ 1/lrn as an abrasion resistant layer 9, and a thin film of S1-0-N with a thickness of 2/4 m are attached to J. FIG. 5 shows the Knoop hardness measured on the S i-0.N thin film formed in sequence 11. As is clear from FIG.
O(!:, a-5i If the total film thickness of C is about 2/Jn1 or more, the Knoop hardness is far from a constant value, and if it is less than 1.111 m, a sufficient Knoop hardness is reached (5, I understand that it is not. L ), J2noko5!2, if the entire film of the resin protective layer 3 is not far from 1ψ or 1μIl'l, the film will not have sufficient hardness. Not only is the effect of J not obtained, but the heat storage effect of the heat-resistant resin layer 2 is weakened, resulting in a decrease in efficiency. The value is within the range.Next, each film H mentioned above is expressed as

[Rua-8iQ
Throw the resin protective layer 3 consisting of the thin film, a-5iO thin film, and a-3iC thin film. 7
Installed with 1. Similarly 1. Attachment 1. I conducted a wiring test using the drive IC of the driver board [,] and an ultrasonic wave pickup, and found that the bonding was stable at line f5. Matoko1. 2) to (-1) to 2 thermals, 71. to 60℃, 00% humidity, 100 (ri warm angle, humidity 100) (1 hour f, l knee: > 8 However, there was no rubbing of the film, and the problem was 11 to 2, -1].Next, I actually introduced each of these to normal and sotoro, and conducted a printing test in the evening. I'll explain Ii'1 ri of ρi when the temperature is 10km.
In the case of a thermal head in which the Ni removal of a-5iO was used as the resin protective layer 3, printing was performed at 8 locations or 9 locations on the abrasion resistant layer. Similarly, when a thin film of Ac7) a-5i C with a film thickness of 500 was used as the resin protective layer 3, the crack was 1 μm.
Occurred in m places [-tita. : $1. (, m Thf +
,,,, r membrane r”ic 1 um, 211+n,
'Z/1m, 54m a-8i thin film, aSlo thin film and a-8i C thin film were used. ”
, Oj Naka-1. 4. Comparison with the 4th invention, and before; d o) ”X
I Example →Resin protection in normal head [flash and (,
Film thickness: 1tt m c7) Saia
91. J nik d, ni J rigata l 戊1,? -It”?(
1st - IM-made thermal hemo+' Light!F
(da. koσ) Test 1.1. It is clear from A that this example (A) is different from 1τtj of the sword full head or crack t:y). -If-marhesoto of this example is heat-resistant resin layer 2
and the heating resistor 5 1, - A resin protective layer '3 formed by the Blasma CV L) method, a thin film of a-5i, a thin film of a = -8i O, and a thin film of a-5iC. ni J
There is a risk that the heat-resistant resin layer 3 may be damaged when the electrode material and heating resistor material are dissolved and removed into the desired circuit pattern. In addition, it is possible to prevent the generation of gas when forming the heating resistor material in a vacuum.
The resistance value of the heating resistor 5 is also stabilized. Furthermore, during T-twir bonding in one mounting process, the softness of the heat-resistant resin layer 2 is offset by the hardness of the resin protective layer 3, so that 5C wire bonding can be performed stably. Part I
, 2, together with these effects 1:, a-8X of this example
The laminated film of the thin film of , the thin film of a-5i (, ), and the thin film of a-5iC is much harder than the heat-resistant resin layer 2, so it can be used for actual printing without increasing the film thickness. Even if 90 parts of pressure is applied to the wear-resistant layer 9 in the process, the resin protective layer 3 prevents the heat-resistant resin layer 2 from deforming.In this way, local deformation is prevented. This prevents the occurrence of cracks in the abrasion-resistant debris 9. As a result, printing can be performed stably for a long period of time, and reliability is greatly improved. Note that at least one of hydrogen and halogen is used. Including 15゜11
Contains at least one cup of oxygen, nitrogen and carbon. A second amorphous nitride layer having silicon as a matrix and [-5] In addition to the a-3iO thin film and the a-3iC thin film described above, for example, a
-5iON7y thin film is considered. However, among these, the a-3iC thin film and the a-5iON thin film are inferior in corrosion resistance to CF4 Brapma, so the a-3iC thin film and/or the a-SiN thin film are It is desirable to laminate it to -5. Moreover, the thin film of a-5i is connected to the heat-resistant resin layer 2, for example, a-3.
By interposing it between the i O thin film, the bonding property between the heat-resistant resin layer 2 and the resin protective layer 3 is improved. In addition, in the above-mentioned embodiment, the characteristics evaluation as a normal head 7 is explained [7, 2L] The heat-resistant insulating substrate 4 is not limited to a thermal head, but can also be used as a multilayer circuit board for a hybrid IC, for example. Hardness of protective layer ω
By improving the stability of the mounting process, it is possible to prevent the occurrence of defects due to breakage of wiring layers, etc. Next, the laminated film of the a-3i thin film, the a-5iO thin film, and the a-5iC thin film described above will be explained as the wear-resistant layer 9 (one example of the thermal head used in 7). In the example described above, a metal substrate made of 21.7 polyimide resin was used as a heat-resistant resin layer, and a resin protective layer and 1.-C were formed on the heat-resistant resin layer.
Film thickness I II m +7) S by sputtering method
Create a heat-resistant insulating substrate by forming a thin film of iO2,
? -0 Next, a heating resistor, individual electrodes, and a common electrode were formed on this heat-resistant insulating substrate by the same method, and a thin film of a-5i, a thin film of a-81O, and a -5
A laminated film of a thin film of iC was formed with wear-resistant debris and L7:: by the same method as in the above-mentioned example, respectively, to create a summer latch. The total thickness of each wear-resistant layer is 2
l! Set to rn, 3μm, 5μm, 8tJrn1. Ta. In addition, the following thermal head was prepared as a comparative example which was different from the thermal head of the example. In other words, wear-resistant debris [, T by sputtering method]
Thermal head with a thin film of 209 and Si3N
A normal head having a thin film of 5iO-N formed by sputtering using a 4-11 tercerat containing -25% by weight of 5i02 was prepared. Using each of these thermal heads, they were installed in a printer in the same manner as in the previous example, and a 1.0 km mark - 7゜ run test was carried out to detect cracks in the wear-resistant debris of each of these thermal heads. The results of measuring the number of occurrences are shown in the table below.
Shown in 1. Table 1 As is clear from Table 1, the laminated film of the a-5i thin film of this example, the a-8iO thin film, and the a-3iC thin film formed by the plasma CVD method is the Ta2O thin film of the comparative example.
, and the 5i-O-N thin film, the number of racks is clearly reduced at the same film thickness. Also, the thickness of the wear-resistant layer is in the range of 31 nm or more based on the results of this example, for example, the thickness of the resin protective layer is 11 nm or more. If you use a material with even higher hardness, it will be 2 μn.
] A film ζ having a film thickness of about 100% also exhibits its effect sufficiently. In addition, if the thickness of this wear-resistant layer is too thick, the efficiency of the multi-marchet will be lowered, so it is desirable to install the power at a length of, for example, 371 m or less. As is clear from the above examples, plasma CV L
) By using a laminated film consisting of a thin film of a-5i, a thin film of a-3i, O, and a thin film of a-5iC as a wear-resistant layer, it is possible to prevent the occurrence of cracks in the surface 4 wear layer. As a result, a higher quality thermal head can be obtained. In addition, a by this plasma CVD note
The -5i thin film, the a-8i O thin film, and the a~SiC thin film contain hydrogen and/) rogen elements, and the conventional Ta
It has improved strength compared to the 2O6 thin film and the 5i-0-N thin film, reduces the number of cracks, and is superior to the 11ii4N wear layer of the thermal head. Without being limited to specific embodiments, it is possible to form a wear-resistant shaft by laminating a first quality silicon layer and a second amorphous silicon layer using an appropriate material. . That is, a first amorphous silicon layer and a thin film containing (7"r hydrogen, halogen, at least 1-weight) as a silicon matrix are formed, and a second amorphous silicon layer is formed. layer, toshi, C* element, ha r
'7 Gen's at least 1111 Reihachi' white 5, Il,
-1) M element, nitrogen, carbon (7) a little < tomo I
P1i@a (7) A second amorphous silicon layer is formed by an appropriate thin film using a matrix of 7.
), the same effect can be obtained in item 8 in which the wear-resistant layer is formed by laminating If crystalline silicon layers. In each of the above embodiments, the lamination of the first and second amorphous silicon layers is used as either the resin protective layer or the abrasion resistant layer. Explanation 1, but
The present invention is not limited thereto, but may be configured such that, for example, the first and second amorphous silicon layers according to the present invention are formed after forming the resin protective layer and the wear-resistant layer. Of course, you can get some great effects. In that case f4i”
I used the film thickness value mentioned above as a reference! It is also possible to reduce the film thickness. In addition, as mentioned above (-Also, in the example, 64 thermal resin layers are formed on a metal substrate), the supporting substrate is limited to metals, and in Example X-- ceramics, glass, etc. A similar effect can be obtained even if the metal substrate is used as a supporting substrate.
People like The Marhetto's miniaturization because the songs are much simpler. "Effects of the Invention" As explained above, the heat-resistant fully insulating board of the present invention improves the hardness of the protective layer and stabilizes the mounting process. In addition, the incidence of defects due to wire breakage, etc. can be reduced, and it is possible to realize a reduction in the number of losses. In addition, when used with a high-resistance substrate of a thermal head, the printing operation of the thermal head can be stabilized.Also, the i@m conductivity of the amorphous silicon layer is low. In addition, according to the thermal knot of the present invention, the production process (X) prevents scratches on the track-resistant layer, and adjusts the resistance of the heating resistor. ζ, -1) can be easily done.The wire hoside ink in the installation 17 can also be done. In '1', '1.1' ensures the prevention of cracks in the wear-resistant layer, which is the first layer on the surface.
It is possible to change the format. As a result, the actual printing operation becomes stable. The drinking part of the head is shown; the second is a partially exploded perspective view;
1 is an explanatory diagram, and FIG. 3 is a configuration diagram showing the configuration of a plasma CVD apparatus used for forming the J quality silicon layer of the T example according to the present invention. Figure 5 shows the characteristics of the thickness of the resin protective layer and its Knoop hardness in the example according to the present invention. It is a characteristic curve diagram showing the characteristics with Knoop hardness for each wear-resistant wheel. ... Metal substrate 2 ... Heat-resistant resin layer Resin protective rot 4 - Heat-resistant insulating substrate wear-resistant layer

Claims (2)

[Claims] (1) A substrate having thermal conductivity, a heat-resistant layer formed on this substrate, and a protective layer formed on this heat-resistant layer, and the protective layer contains at least one of hydrogen and halogen. a first amorphous silicon layer containing silicon as a matrix; and a second amorphous silicon layer containing at least one of hydrogen and halogen and containing at least one of oxygen, nitrogen, and carbon and containing silicon as a matrix. A heat-resistant insulating substrate characterized by having a laminated layer with a silicon layer. (2) A thermally conductive substrate, a heat-resistant layer formed on this substrate, a protective layer formed on this heat-resistant layer, a heating resistor formed on this protective layer, and this heating resistor. a first amorphous silicon layer having a wear-resistant layer formed on the body, at least one of the protective layer and the wear-resistant layer containing at least one of hydrogen and halogen and having silicon as a matrix; 1. A thermal head comprising a second amorphous silicon layer containing at least one of hydrogen and halogen, and a second amorphous silicon layer containing at least one of oxygen, nitrogen, and carbon and having silicon as its base material.