JPH0278573A - Heat-resistant insulating substrate and thermal head - Google Patents

Abstract

PURPOSE:To enhance a rigidity, reduce a failure occurrence ratio, prevent the crack of a wear-resistant layer, and improve a reliability by a method wherein an amorphous substance layer containing at least one of hydrogen and halogen and mainly composed of silicon and at least one selected from among nitrogen, carbon, and oxygen is provided as a resin protective layer or a wear-resistant layer. CONSTITUTION:On a metal substrate 1 made of Fe-Cr alloy or the like, a heat- resistant resin layer 2 serving as a heat-accumulation layer and also an insulating layer is formed. On the heat-resistant resin layer 2, a resin protective layer 3 made of an amorphous substance mainly composed of silicon and at least one of nitrogen, carbon, and oxygen and containing at least one of hydrogen and halogen in the ratio of 20atomic% or more is provided to form a heat- resistant insulating substrate 4. On this heat-resistant insulating substrate 4, a heating resistor 5 is formed. On the heating resistor 5, discrete electrodes 6 and a common electrode 7 are provided so as to form openings as a heat generation part. An adhesive layer 8 and a wear-resistant layer 9 serving also as an anti-oxidant film are formed so as to cover the openings as the heat generation part.

Description

[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a thermal head used in a thermal recording device such as a facsimile or a printer, and a heat-resistant insulation used in this thermal head and various electronic devices. Regarding the board.

(Prior art) Recently, heat-resistant insulating substrates in which heat-resistant resins such as polyimide resins are provided as insulating layers, heat storage layers, etc. on various substrates have become popular, such as high-resistance substrates for thermal heads and multilayer circuit boards for hybrid ICs. It has come to be widely used as a supporting substrate for various electronic devices that require high reliability against heat.

For example, in thermal heads, instead of the conventional high-resistance substrate formed by forming a glazed glass layer on a ceramic substrate such as alumina as a heat-retaining layer to control heat dissipation and heat accumulation, a ceramic substrate or a metal substrate is used as a high-resistance substrate. A heat-resistant insulating substrate on which a heat-resistant resin layer such as a polyimide resin layer is formed is used.

As a thermal head provided with this polyimide resin layer as a heat insulating layer, for example, one having the following structure is known.

That is, a heat-resistant resin layer made of polyimide resin or the like, which serves as a heat storage layer and an insulating layer, is formed on a metal substrate made of Fe alloy or the like, and Ta-5iO□, Ti-5iO
A heating resistor made of □, etc. is formed into a film by sputtering or the like. Furthermore, an opening that becomes a heat generating part is formed on this heat generating resistor, and individual electrodes and a common electrode made of Afi, Ato5i-Cu, etc. are formed, and silicon oxynitride is formed so as to cover at least this heat generating part. (
A wear-resistant layer made of Si-0-N) that also serves as an oxidation-resistant film is formed.

By using a polyimide resin layer as a heat insulating layer, such a thermal head has a thermal diffusivity of 173 to 176 compared to a conventional glazed glass layer.
Because of its low thermal efficiency, it has excellent thermal efficiency. In addition, since it becomes possible to use a flexible support substrate such as a metal substrate, it is also possible to perform bending processing, and it is therefore attracting attention as a small, inexpensive, and high-performance thermal head. There is. However, such a thermal head has the following problems in its manufacturing process.

For example, the heat-resistant resin layer is damaged during etching processing performed when forming heating resistors and electrodes, or during ashing of a masking film.

Further, when depositing the heating resistor material in a vacuum, a large amount of gas is released from within the polyimide resin layer, and the influence of this gas causes a problem in that the resistance value cannot be easily controlled.

Furthermore, when wiring using the wire bonding method,
A problem arises in that bonding is difficult to perform due to the elasticity of the polyimide resin layer.

As a means to solve these problems, the applicant has previously developed a resin protective layer made of an inorganic insulating material such as alumina, silicon oxide, or sialon between the heat-resistant resin layer and the heating resistor layer. (Japanese Patent Application No. 62-21428, No. 62-1)
No. 34326, No. 62-194655).

By forming a resin protective layer between the heat-resistant resin layer and the heating resistor layer in this way, damage to the polyimide resin layer and gas release from the polyimide resin layer are prevented during the manufacturing process, and the overall rigidity is also improved. Since this increases to a certain extent, effects such as being able to perform the mounting process stably are obtained.

Forming a resin protective layer on a heat-resistant resin layer in this way is an effective means not only as a high-resistance base for thermal heads, but also as an insulating substrate for other electronic devices, allowing the mounting process to be performed stably. It is.

(Problems to be Solved by the Invention) As described above, a heat-resistant insulating substrate in which a resin protective layer made of an inorganic insulating material such as alumina, silicon oxide, or sialon is provided on a heat-resistant resin layer such as polyimide resin, For example, although various advantages can be obtained by using it as a high-resistance substrate for a thermal head, the above-mentioned inorganic insulating layer does not have sufficient film strength, resulting in the following problems. There is.

That is, when the present inventors installed the thermal head having the above-mentioned resin protective layer in a printer and actually conducted a printing running test, it showed an abnormal change in resistance value during running, a phenomenon that adversely affected printing. I was given a lot of cells. A detailed investigation into the abnormal resistance change revealed that foreign matter such as dust caught between the thermal head and the thermal paper or between the thermal paper and the roller caused cracks in the wear-resistant layer that forms the surface layer of the thermal head. It has been found that when these cracks reach the heating resistor, they have an adverse effect on printing characteristics.

Such problems cannot be seen in thermal heads that use conventional high-resistance substrates with a glazed glass layer formed on a ceramic substrate or high-resistance substrates with a glass layer formed on a metal substrate, and which otherwise have the same structure. This is a phenomenon that was not possible.

This is because the hardness of the entire gas is large in a thermal head using a high-resistance substrate that uses a glazed glass layer or a glass layer as a heat insulating layer. Because it only undergoes the same deformation as
It is thought that local deformation is prevented and racks as described above do not occur.

On the other hand, in the case of a high-resistance substrate made of a heat-resistant resin such as polyimide resin, although the rigidity of the substrate is increased to some extent by the resin protective layer as described above, the deformability of the resin is This is because the change in the heat-resistant resin layer cannot be prevented by the resin protective layer or the wear-resistant layer when a locally concentrated load is applied to the wear-resistant layer. It is thought that the deformation of the resin protective layer and wear-resistant layer cannot follow the deformation of the heat-resistant resin layer, resulting in cracks.

Such problems are not limited to thermal heads, but also occur in multilayer circuit boards for hybrid ICs as mentioned above, where deformation of the heat-resistant resin layer during the mounting process causes disconnection of the wiring layer provided on top of it, defective bonding, etc. It invites.

The present invention was made in order to address the problems of the prior art, and includes a heat-resistant insulated substrate that has increased rigidity and reduced the incidence of defects in the mounting process, and a Wear-resistant layer prevents cranking,
Aiming to provide a thermal head with improved reliability 6 [Configuration of the Invention] (Means for Solving the Problems) A heat-resistant insulating substrate of the present invention includes a support substrate with high thermal conductivity,
a heat-resistant resin layer formed on this support substrate; It is characterized by comprising at least a resin protective layer made of an amorphous material containing 20 M% or more of one type of material.

Further, the thermal head of the present invention includes a highly thermally conductive support substrate, a heat-resistant resin layer formed on the support substrate, a resin protective layer provided on the heat-resistant resin layer, and a resin protective layer formed on the resin protective layer. A thermal head comprising at least a large number of formed heating resistors, a conductor connected to each of the heating resistors, and a wear-resistant layer provided to cover at least a heat generating part of the heating resistor. , at least one of the resin protective layer and the wear-resistant layer contains silicon as a main component, contains at least one of hydrogen and a halogen element, and contains at least one selected from nitrogen, carbon, and oxygen.
It is characterized by being composed of an amorphous material containing atomic percent or more.

(Function) In the thermal head of the present invention, the resin protective layer and the wear-resistant layer, and in the heat-resistant insulating substrate as the resin protective layer, contain at least one of hydrogen and halogen elements selected from nitrogen, carbon, and oxygen. An amorphous layer containing at least one type of silicon as main components is formed. This amorphous layer has high toughness because it contains hydrogen and halogen elements and many dislocations, and unlike polyimide, etc., it is an inorganic film, so the hardness of the substrate itself is low. Significantly improved.

This increases the rigidity of the entire substrate or the entire thermal head, and improves crack resistance. That is,
It is possible to prevent cracks caused by local deformation of the heat-resistant resin layer such as polyimide resin due to the pressure applied to the surface layer.

By the way, if we only consider preventing deformation of the heat-resistant resin layer in a thermal head, for example, this can also be achieved by increasing the thickness of the wear-resistant layer.

However, in this method, the distance between the heating resistor and the thermal paper becomes large, which not only causes significant performance disadvantages such as decreased efficiency and resolution, but also significantly reduces mass productivity. In contrast, in the present invention, since an amorphous material having the above properties is used, the strength of the entire substrate can be improved without increasing the film thickness.

(Example) Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a configuration diagram of the main parts of a thermal head according to an embodiment of the present invention, and 1 is a 0-thickness film made of Fe-Cr alloy.
．． It shows a metal substrate of about 5[+1!1. On this metal substrate 1, a heat-resistant resin layer 2 made of polyimide resin, polyamide-imide resin, or a mixture or laminate thereof, which serves as a heat storage layer and an insulating layer, is formed with a thickness of about 20 μs. On the layer 2, there is a resin protective layer 3 having a thickness of 1 to 10 mol and made of an amorphous material mainly composed of at least one of nitrogen, carbon, and oxygen and silicon, and containing at least one of hydrogen and a halogen element. The heat-resistant insulating substrate 4 is thus formed.

On this heat-resistant insulating substrate 4, Ta-3in2. Ti
A heat generating resistor 5 made of -3iO□ or the like is formed, and an opening that becomes a heat generating part is formed on the heat generating resistor 5. Individual electrodes 6 and common electrodes 7 of about 1 μs are formed, and adhesive layers 8 and 5i-0 of 5in2 are formed to cover at least the opening that becomes the heat generating part.
A wear-resistant layer 9 made of -N and also serving as an oxidation-resistant film is formed.

This thermal head has one individual electrode 6 and a common electrode 7.
By applying a pulse voltage at predetermined time intervals between the two, the heating resistor corresponding to the opening serving as the heating section generates heat, and printing is performed.

This thermal head is manufactured, for example, as follows.

First, as shown in FIG. 2, a metal substrate 1 made of Fe-16 wt % Cr alloy is cut into predetermined dimensions, degreased, washed, dried, and heated at 600°C to 800°C in a soft water cable atmosphere.
Heat treatment is performed at ℃ (Figure 2-a). Next, on this metal substrate 1, for example, polyimide varnish or polyamide varnish is coated using a roll coater or a spin coater, and after baking, 2 coats are applied.
A predetermined amount is applied to a film thickness of 0 μs to 30 μs, and the heat-resistant resin layer 2 is formed by drying and baking (Fig. 2 - mouth)
.

Next, after washing the surface of this heat-resistant resin layer 2 (Fig. 2-
c), such as sputtering method, ion blating method,
Vacuum deposition method, plasma CVD method, ECR Plas 7CVD
The resin protective layer 3 is formed by
(Figure 2-2). Among these methods, plasma is preferred because it has good film adhesion, can be processed at relatively low temperatures without impairing the properties of the substrate, and the physical properties of the film, that is, the electrical and optical properties, can be easily controlled. CVD method is suitable. In particular, in the present invention, since the substrate to be adhered is made of a heat-resistant resin, the substrate temperature can be adjusted even when polyimide resin is used as the heat-resistant resin.
Since the heat resistance temperature of general polyimide resins cannot exceed 550° C., a method that can process at a low temperature lower than this heat resistance temperature is required.

This plasma CVD method uses SiH4 gas, SiF, gas, etc. as the SL acid component of the raw material gas, and N2 gas, CH gas, N20 gas, etc. as the other component, and combines these gases in a vacuum. This is a method of turning it into plasma and forming the desired ceramic thin film on a substrate. At this time, hydrogen and halogen elements such as fluorine in the source gas are occluded in the film, and a thin film that can stably maintain an amorphous state due to the influence of these elements is obtained.

In this example, a heat-resistant insulating substrate 4 was produced by forming a resin protective layer 3 using a parallel plate type capacitively coupled plasma CVD apparatus shown in FIG. 3 according to the procedure shown below.

In FIG. 3, 11 is a vacuum chamber, and inside this vacuum chamber 11 there is a flat ground electrode 12 and a high frequency electrode 1.
3 are installed facing each other, and this flat ground electrode 1
A processing substrate 14, that is, a metal substrate on which a heat-resistant resin layer is formed, is placed on the substrate 2. Next, after the inside of the vacuum chamber 11 is evacuated to about 10'' Torr using a vacuum pump (not shown), the processing substrate 14 is heated to about 150° C. to 450° C. using a heater 15 attached to the ground electrode 12. Next, while supplying the raw material gas into the vacuum chamber 11 from the gas inlet 16, the temperature is set at 0.05 Torr to 1,0 Torr.
While evacuating from the exhaust port 17 so as to maintain a degree of vacuum of approximately Converts gas into plasma,
A desired thin film is formed on the processing substrate 14.

Here, the source gas is Si when forming the a-5iN film.
H, gas and N2 gas were used, and SiH4 gas and 0114 gas were used when forming the a-5iN film.

The quality of the obtained film varies depending on the substrate temperature, high frequency input power, etc. In this example, when forming the a-5iN film, 50 SCCM of SiH4 gas and 300 SCCM of N2 gas were used.
SiH4 is supplied when forming the B-5iN film.
The gas was supplied at 50 SCCM and CH4 gas at 300 SCCM. Other conditions were a vacuum pressure of 1.0 Torr, a high frequency power of 300 W, and a substrate temperature of 250°C. The film formation speed is 1 μs/hour for a-3iN film and 1.5 for a-9iN@
E11/hour and the film formation rate by conventional sputtering method, for example, 4000 people/hour for 5iOz film, 5L-0
This was significantly larger than the 5,000 people/hour for the -N film.

Next, Table 1 below shows examples in which the concentrations of nitrogen, carbon, and oxygen were varied.

Table 1 (1st column, bottom margin) Note that the hardness increases by containing a large amount of nitrogen, carbon, oxygen, etc. There is no practical problem if it is 10 atomic % or more, but if etching resistance is taken into account, 20 atomic %
The above is desirable. Therefore, a stack of these films may be used.

Next, Ta-SiO is deposited on the resin protective layer 3 of the heat-resistant insulating substrate 4 by sputtering or other known methods.
□, Ti-5iO□, etc. are formed into a film (Fig. 2-E), and then the electrode material AQ or AQ-3
After forming a film of i-Cu or Au by a sputtering method or the like (see Fig. 2), a masking film with a desired circuit pattern is formed in which an opening that will become a heat generating part is formed, and then a masking film is formed using, for example, chemical dry etching. 1 Individual heating resistor 5, individual electrode 6 and common type Vi 7
(Fig. 2-g).

After this, adhesive layer 8 and 5i-0- made of SiO□
A wear-resistant layer 9 made of N and also serving as an oxidation-resistant film is formed by sputtering or other known methods (FIG. 2-H) to complete the thermal head.

Next, in the manufacturing process of this thermal head.

The results of measuring the hardness of the resin protective layer and the hardness on the wear-resistant layer serving as the surface layer will be described.

First, 500 people each deposited an aSiN film and an a-3iC film as a resin protective layer 3 on a heat-resistant resin layer 2.

Films of 2 μm, 3 IEn, and 5 μs were formed by the above-described procedure, and the Knoop hardness of each film was measured.

The results are shown in FIG. As is clear from the figure,
Both a-5iN film and a-5iC film are 2/a1 to 3-
The Knoop hardness value became almost constant when the film thickness was above a certain level.

Moreover, when the film thickness is 14 or less, a certain level of hardness is not achieved.

Next, using a heat-resistant insulating substrate having a resin protective layer of each of the thicknesses described above, a heating resistor was formed according to the procedure described above.

Individual electrodes and common electrodes are formed, and a 5in2 film with a thickness of 1 inch as an adhesive layer and a 2 inch thick film as an abrasion resistant layer are formed on top of the individual electrodes and a common electrode.
A 5L-0-N film of μs was formed in order, and this SL-〇-
Knoop hardness on the N film was measured. The results are shown in FIG. It can be seen from the figure that, similar to the hardness of the resin protective layer, when the thickness of the resin protective layer is about 2 μs or more, the hardness reaches a substantially constant level, and when it is less than 1 μm, sufficient hardness is not achieved.

For these reasons, if the thickness of the resin protective layer does not reach 1 μm, the effect of improving the film hardness cannot be obtained sufficiently, and if it is too thick, not only will no further effect be obtained, but the heat-resistant resin layer Since the heat storage effect is weakened and the efficiency is lowered, the preferable thickness of the resin protective layer is about 1 to 10 mm.

Next, a thermal head having a resin protective layer consisting of an a-3iN film and an a-5iC film of each thickness described above was attached to an Affi
A wiring test using ultrasonic wire bonding with a drive IC was performed on a driver board mounted in the same manner using double-sided tape on a heat dissipation board consisting of
Bonding was performed stably. In addition, the thermal head obtained in this way was placed in a constant temperature and humidity chamber at 60°C and 90%.
When a standing test was conducted for 000 hours, there was no peeling of the film and no problems occurred.

In addition, each of these thermal heads was actually installed in a printer and a printing running test was conducted. The test environment was at room temperature and humidity. Results of a 5km driving test.

A thermal head with a 500-thickness a-3iN film as a resin protective layer has 5 cracks in the wear-resistant layer, and a thermal head with a 500-thick a-3iC film as a resin protective layer has 8 cracks. It was occurring somewhere. On the other hand, the film thickness is 1
gss, 24.31ug, 5pm a-3iN
Almost no cracks were observed in any of the samples using the film and the a-5iC film.

In addition, as a comparison with the present invention, using a thermal head having the same structure except that a sialon layer having a thickness of 1 mm was formed by sputtering as a resin protective layer in the thermal head of the above-mentioned example, 5kl11 printing was similarly performed. When a running test was conducted, cranking occurred in the wear-resistant layer at 20 points of force.

It is clear from this test result that the thermal head of this example has excellent crack resistance.

Further, the thermal head of this embodiment uses an a-5iN film and an a-3iC film formed by plasma CVD as a resin protective layer between the heat-resistant resin layer and the heating resistor.
This eliminates the risk of damaging the heat-resistant resin layer when dissolving and removing the electrode material and heating resistor material into a desired circuit pattern, and also prevents gas generation when forming the heating resistor material in a vacuum. The resistance value is also stabilized.

Furthermore, during wire bonding in the mounting process, the cushioning effect of the heat-resistant resin layer is offset by the hardness of the resin protective layer, making it possible to perform wire bonding stably. In addition to these effects, a of this example
-3iN film and a -5iC film.

Because it is extremely hard compared to the heat-resistant resin layer, the heat-resistant resin layer does not deform due to the protective resin layer even if local pressure is applied to the wear-resistant layer during actual printing operations without making the film too thick. In other words, local deformation is prevented and cracks in the wear-resistant layer are prevented.

Therefore, printing can be performed stably for a long period of time, and reliability is greatly improved.

Note that in one or more embodiments, a-SiN is used as the resin protective layer.
Although the description has been made using the film and the a-SiC film individually, similar effects were obtained when a laminate of these films was used as the resin protective layer. For example, an a-5iN film, which is slightly advantageous in terms of Knoop hardness and fracture strength, is formed on a heat-resistant resin layer with a film thickness of about 2 μs, and then an a-5iC film, which is advantageous in etching resistance (versus chemical dry etching), is formed on the heat-resistant resin layer. A similar effect was obtained by forming a film with a thickness of about 1 μs. Also, these a
A similar effect was obtained when the composition ratio of the constituent elements of the -5iN film and the a-3iC film was changed to change the film quality and a stack of films was used.

In addition, in the above-mentioned embodiment, the evaluation of the characteristics of a thermal head was explained, but the heat-resistant insulating substrate is not limited to a thermal head, and can be used for, for example, a hybrid IC.
It is also very effective as a multilayer circuit board for use in various applications, such as improving the hardness of the resin protective layer, which improves the stability of the mounting process and effectively prevents defects due to breakage of wiring layers. It is.

Next, an example of a thermal head using an a-3iN film and an a-3iC film as a wear-resistant layer that also serves as an oxidation-resistant film will be described.

First, a polyimide resin layer was formed as a heat-resistant resin layer on the metal substrate prepared in the above example, and
A SiO□ film having a thickness of 1 μs was formed as a resin protective layer on this heat-resistant resin layer by sputtering to produce a heat-resistant insulating substrate.

Next, a heating resistor, individual electrodes and a common electrode are formed on this heat-resistant insulating substrate by a similar method, and a-
A thermal head was fabricated by forming a 5iN film and an a-3iC film as wear-resistant layers in the same manner as in the previous example. The thickness of each of these wear-resistant layers is 2
The length was 34.5μm and 87m.

In addition, as a comparative example for the thermal head of this embodiment, Ta205 was prepared by sputtering as a wear-resistant layer.
5i formed by sputtering using a target with a composition of film and SL, N, -25 wt% Sin.
Thermal heads each having a film thickness of -0-N were manufactured.

Using each of these thermal heads, a 5k111 printing running test was conducted by incorporating them into an actual machine in the same manner as in the above-mentioned examples, and the number of cracks generated in these wear-resistant layers was measured. The results are shown in Table 2 below.

Table 2 As is clear from Table 2, the a-5iN film and the a-5iC film of this example formed by plasma CVD method.
The film clearly has better crack resistance than the Ta, O, and Si-0-N films of the comparative example at the same film thickness.

In addition, as for the thickness of the wear-resistant layer, from the results of this example, a preferable range is 3 kn or more, but if a material with higher hardness is used as the resin protective layer, for example, a film thickness of about 21 m is possible. Demonstrate its full effect. Further, if the thickness of this wear-resistant layer is too thick, the efficiency of the thermal head will decrease, so a thickness of 8 or less is preferable.

As is clear from the above examples, by using the a-5UN film or the a-3iC film produced by the plasma CVD method as the wear-resistant layer, cracks in the wear-resistant layer during actual printing can be prevented, resulting in higher quality thermal printing. You will get the head. Furthermore, these a-5iN films and a-3iC films produced by the plasma CVD method contain hydrogen and halogen elements,
Because it contains many metastases, conventional Ta, 0
It has better toughness than the 5i-0-N film and the 5i-0-N film, and is also excellent as a wear-resistant layer for thermal heads in terms of crack resistance.

In the examples of the present invention, the a-5iN film is mainly used.

Although the a-5iC film has been described, the a-5iO film, a-3
Similar effects were obtained when the iON film, a-3iCN film, and a-5iCO film were used as the resin protective layer or the wear-resistant layer.

In each of the above-mentioned embodiments, an amorphous layer mainly composed of silicon and nitrogen or silicon and carbon is used as either the resin protective layer or the wear-resistant layer of the thermal head. However, it is obvious that the same effect can be obtained even if both of these are formed by this amorphous layer, and in that case, the film thickness should be further reduced by referring to the above-mentioned film thickness values. is also possible.

Furthermore, in each of the above embodiments, a heat-resistant resin layer was formed on a metal substrate.

The effects of the present invention can be similarly expected even when the support substrate is not limited to metal but ceramics or glass.

However, if a metal substrate is used as a support substrate, the metal substrate itself can also be used as a common electrode,
Since it can be bent, it greatly contributes to the miniaturization of thermal heads.

〔Effect of the invention〕

As explained above, according to the heat-resistant insulating substrate of the present invention,
By improving the hardness of the resin protective layer, the mounting process can be carried out stably, and the incidence of defects such as wire breakage is reduced, and when used as a high-resistance substrate for a thermal head, the printing run of the thermal head can be improved. can be stabilized.

In addition, according to the thermal head of the present invention, damage to the heat-resistant resin layer during the manufacturing process is prevented, resistance value can be easily controlled, wire bonding can be performed stably during the mounting process, and wire bonding can be performed stably during actual printing. It is possible to effectively prevent cracks in the wear-resistant layer, which is the surface layer, and therefore it is possible to perform stable printing, and its reliability is significantly improved.

[Brief explanation of the drawing]

FIG. 1 is a partially exploded perspective view showing the main parts of a thermal head according to an embodiment of the present invention, FIG. 2 is a flow chart showing the manufacturing process of a thermal head according to an embodiment of the present invention, and FIG. Figure 4 is a diagram showing the configuration of the vacuum film deposition apparatus used to form the amorphous layer in the embodiment of the invention, and is a graph showing the relationship between the thickness of the resin protective layer and its Knoop hardness in the embodiment of the invention. FIG. 5 is a graph showing the relationship between the thickness of the resin protective layer and the Knoop hardness on each of the II wear-resistant layers in the examples of the present invention. 1...Metal substrate 2...Heat-resistant resin layer 3...
Resin protective layer 4...Heat-resistant insulating substrate 5...Heating resistor 6...Individual electrode 7...Common electrode 9...Abrasion-resistant layer that also serves as anti-oxidation film Agent Patent attorney Noriyuki Chika Yudo Kikuo Takehana Figure 1 Figure 2 Figure 3

Claims (2)

[Claims] (1) A support substrate with high thermal conductivity, a heat-resistant resin layer formed on this support substrate, a silicon-based material formed on this heat-resistant resin layer, containing at least one of hydrogen and halogen elements, and nitrogen 1. A heat-resistant insulating substrate comprising at least a resin protective layer made of an amorphous material containing at least 20 atom % of at least one selected from the group consisting of , carbon, and oxygen. (2) A highly thermally conductive support substrate, a heat-resistant resin layer formed on this support substrate, a resin protective layer provided on this heat-resistant resin layer, and a large number of heat generating units formed on this resin protective layer. A resistor, a conductor connected to each of these heating resistors,
A thermal head comprising at least a wear-resistant layer provided to cover at least a heat-generating portion of the heating resistor, wherein at least one of the resin protective layer and the wear-resistant layer contains silicon as a main component and contains hydrogen and halogen elements. 1. A thermal head comprising an amorphous body containing at least one selected from nitrogen, carbon, and oxygen at 20 atomic % or more.