JPH03264666A - Device for producing semiconductor - Google Patents
Device for producing semiconductorInfo
- Publication number
- JPH03264666A JPH03264666A JP6480190A JP6480190A JPH03264666A JP H03264666 A JPH03264666 A JP H03264666A JP 6480190 A JP6480190 A JP 6480190A JP 6480190 A JP6480190 A JP 6480190A JP H03264666 A JPH03264666 A JP H03264666A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- sputtering
- wafer
- sample
- composition distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 238000004544 sputter deposition Methods 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000498 cooling water Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000002826 coolant Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体装置の配線金属などの薄膜を作製す
る半導体製造装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor manufacturing apparatus for manufacturing thin films such as wiring metal of semiconductor devices.
この発明は、半導体製造装置において、試料を冷却する
ことにより、スパッタリングにより薄膜を作製する際に
、薄膜の組成分布が−様になるようにしたものである。According to the present invention, when a thin film is produced by sputtering, the composition distribution of the thin film becomes -like by cooling a sample in a semiconductor manufacturing apparatus.
従来、第２図に示すようにスパッタ装置のウェハホルダ
ー２の背面に、ヒータ５を設置し、ウェハ４を加熱しな
がらスパッタリングを行うことにより、！１１９のステ
ソプカハレソジを向上させた装置が知られていた。Conventionally, as shown in FIG. 2, a heater 5 is installed on the back of a wafer holder 2 of a sputtering apparatus, and sputtering is performed while heating the wafer 4. A device has been known that improves the 119 stethopkahare method.
しかし、従来のスパッタ装置は、スパッタ中の加熱およ
びスパッタ自体の作用により、ウェハの湿度が上昇し、
薄膜の組成分布が−様にならず、薄膜と基板界面に析出
物が形成され、例えばＡｌＳｉ膜の場合、Ａ４とＳｉＯ
□界面に８丁が析出し、コンタクト抵抗が増大したり、
ドライエツチングにてパターンを形成する際に、基′板
表面に微少な盛り上がりが発生するという欠点があった
。However, with conventional sputtering equipment, the humidity of the wafer increases due to heating during sputtering and the action of the sputtering itself.
The composition distribution of the thin film is not uniform, and precipitates are formed at the interface between the thin film and the substrate. For example, in the case of an AlSi film, A4 and SiO
□ 8 pins precipitate at the interface, increasing contact resistance,
When a pattern is formed by dry etching, there is a drawback in that minute bulges are generated on the surface of the substrate.
そこで、この発明は従来のこのような欠点を解決するた
めに、スパッタ膜の組成分布が−様な膜を得ることを目
的としている。Therefore, in order to solve these conventional drawbacks, the present invention aims to obtain a sputtered film having a -like composition distribution.
上記問題点を解決するために、この発明はウェハホルダ
ーに冷却機構を取りイ］け、スパッタ中においても、ウ
ェハの温度上昇が少なくなるようにした。In order to solve the above problems, the present invention incorporates a cooling mechanism into the wafer holder so that the temperature rise of the wafer is reduced even during sputtering.
上記のように構成したスパッタ装置にて、薄膜を作製す
ると、スパッタ中もウェハの温度上昇が少なく、組成分
布の均一な膜を得ることができるものである。When a thin film is produced using the sputtering apparatus configured as described above, the temperature rise of the wafer is small even during sputtering, and a film with a uniform composition distribution can be obtained.
以下に、この発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below based on the drawings.
第１図において、ウェハホルダー２に冷却バイブ３を埋
め込む。冷却材としては、水でよいが、さらに大きな効
果が得られる。In FIG. 1, a cooling vibrator 3 is embedded in a wafer holder 2. Water may be used as the coolant, but even greater effects can be obtained.
以上のような実施例において、ウェハ４は、スパッタリ
ングにより発生する熱が、ウェハホルダー２に伝達し、
ウェハ自体の温度上昇は低減され、組成分布の均一な薄
膜を得ることができる。したがって、冷却材としては、
温度の低い方が有効に作用する。In the embodiments described above, the wafer 4 transfers heat generated by sputtering to the wafer holder 2,
The temperature rise of the wafer itself is reduced, and a thin film with a uniform composition distribution can be obtained. Therefore, as a coolant,
It works more effectively at lower temperatures.
また、バイアススパッタ等との併用により、ステ、プカ
ハレノジの向上をはかれば、さらに良好な薄膜を得るこ
とができる。In addition, by using bias sputtering or the like in combination to improve the step and reflow rate, an even better thin film can be obtained.
〔発明の効果〕
この発明は、以上説明したようにウェハホルダーを冷却
するこ止により、スパッタ中のウェハの温度上昇を低減
し、薄膜の組成分布を均一にする効果がある。[Effects of the Invention] As explained above, the present invention has the effect of reducing the temperature rise of the wafer during sputtering and making the composition distribution of the thin film uniform by not cooling the wafer holder.
第１図は本発明にかかるスパック装置の断面図、第２図
は従来のスパック装置の断面図である。
ターゲット
ウェハホルダー
冷却パイプ
ウェハ
ヒータ
以上FIG. 1 is a sectional view of a spacking device according to the present invention, and FIG. 2 is a sectional view of a conventional spacking device. Target wafer holder cooling pipe wafer heater or more
Claims (1)
試料を冷却することを特徴とする半導体製造装置。In an apparatus for producing thin films by sputtering,
A semiconductor manufacturing device characterized by cooling a sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6480190A JPH03264666A (en) | 1990-03-15 | 1990-03-15 | Device for producing semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6480190A JPH03264666A (en) | 1990-03-15 | 1990-03-15 | Device for producing semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03264666A true JPH03264666A (en) | 1991-11-25 |
Family
ID=13268709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6480190A Pending JPH03264666A (en) | 1990-03-15 | 1990-03-15 | Device for producing semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03264666A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0842707A1 (en) * | 1996-11-15 | 1998-05-20 | Honeywell Inc. | Apparatus and method for coating delicate circuits by thermal spraying |
-
1990
- 1990-03-15 JP JP6480190A patent/JPH03264666A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0842707A1 (en) * | 1996-11-15 | 1998-05-20 | Honeywell Inc. | Apparatus and method for coating delicate circuits by thermal spraying |
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