GB2301480A - Thermo chuck for mounting wafers - Google Patents
Thermo chuck for mounting wafers Download PDFInfo
- Publication number
- GB2301480A GB2301480A GB9517702A GB9517702A GB2301480A GB 2301480 A GB2301480 A GB 2301480A GB 9517702 A GB9517702 A GB 9517702A GB 9517702 A GB9517702 A GB 9517702A GB 2301480 A GB2301480 A GB 2301480A
- Authority
- GB
- United Kingdom
- Prior art keywords
- chuck
- anodized
- oxide layer
- thermo
- flaking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 235000012431 wafers Nutrition 0.000 title claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 10
- 230000002265 prevention Effects 0.000 claims description 7
- -1 polytetrafluorethylene Polymers 0.000 claims description 6
- 238000007743 anodising Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 19
- 239000004810 polytetrafluoroethylene Substances 0.000 description 7
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001684 chronic effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Resistance Heating (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
2301480 CONTACT-TYPE THERMO CHUCK AND FABRICATING METHOD THEREFOR The
present invention relates to a contact-type thermo chuck for mounting wafers and heating the mounted wafers in a photolithographic process for fabricating a semiconductor device, and a fabricating method therefor.
With the advent of sub-micron technology, the fabrication processes of a semiconductor device include the formation of micro-patterns and highly stacked structures of various materials. To achieve high reliability in such devices, there are many requirements for achieving process controllability and low damage during such etching operations as that for a phot.olithographic process, which is generally recognized as the most important step of semiconductor device fabrication. Thus, there is much research into the development of new techniques and equipment to carry out this processing.
One such item is a therno chuck, which is used f or mounting and heating wafers in the course of a lithographic process, e.g., baking or ashing to remove a photosensitive layer. As such, the thermo chuck periodically undergoes repeated and rapid heating and cooling cycles, generally at least once per minute, over a wide temperature range of about 100-3000C.
FIG. 1 of the accompanying drawings is a schematic crosssectional view of a conventional contact-type thermo chuck. As shown in FIG. 1, a thermo chuck 10 on which a waf er (not shown) is mounted to undergo a semiconductor manufacturing 1 process is made of a metal exhibiting high heat conductivity, e.g., aluminum. As insulating means between the wafer and the aluminum chuck 10, a thin anodized-oxide layer 15 is formed by a surface processing method such as hard-anodizing of the aluminum chuck.
The above contact-type thermo chuck experiences flaking, which is a chronic problem of a thermo chuck. Here, anodizedoxide layer 15 generates thin pieces of itself (about 0.5gm in thickness), which peel off and stick onto the rear surface of the wafer being processed. This foreign matter, the flakes, is a source of particle contamination. In particular, the foreign matter stuck to the wafer causes a local focus during a photolithographic process, which requires extreme uniformity.
In order to solve such a problem, Samsung Electronics Co C P,.-r M.) Ltd has proposed a technique in which kapton 'tape exhibiting excellent heatresistance properties, is attached to the anodized-oxide layer which is the source of flaking.
FIG. 2 of the accompanying drawings is a cross-sectional view of an improved thermo chuck with kapton tape 27 for preventing the flaking of an anodized-oxide layer 25. This method, however, also has a problem. That is, when kapton tape 27 is used for a time, the strength of the adhesive between anodized-oxide layer 25 and kapton tape 27 weakens due to the severe temperature fluctuations of the lithographic process, so that bubbling is generated. As the result, frequent pick-up errors and dropping of the wafer occur in the operation of a robot arm, when the wafer is being manipulated.
2 It is an object of the present invention to provide a thermo chuck having flaking prevention means, in which the problems of the prior art can be solved fundamentally.
It is another object of the present invention to provide a fabricating method by which a thermo chuck with flaking prevention means can be fabricated efficiently.
According to the present invention there is provided a contact-type thermo chuck for mounting and heating wafers, comprising: an anodized- oxide layer formed on the whole surface of the thermo chuck for insulating the wafers and thermo chuck; and flaking prevention means formed of polytetrafluoroethylene on the whole surface of the anodizedoxide layer for preventing flaking on the surface of the anodized- oxide layer.
According to a further aspect of the present invention there is provided a method for fabricating a thermo chuck for mounting and heating wafers, comprising the steps of: providing a pure aluminum chuck; hard-anodizing the aluminum chuck for forming an anodized-oxide layer on the surface of the aluminum chuck; lapping for smoothing the anodized-oxide layer, and polytetrafluoroethylene coating the lapped anodized-oxide layer to prevent flaking.
Embodiments of the present invention will now be described by way of example with reference to the accompanying drawings, in which:
FIG. 1 is a cross-sectional view of a conventional contact-type thermo chuck; 3 FIG. 2 is a cross-sectional view of another conventional thermo chuck, and FIG. 3 is a cross-sectional view of a contact-type therno chuck according to an emobodiment of the present invention.
In FIG. 3, reference numeral 30 denotes a pure aluminum chuck exhibiting excellent heat conductivity. An anodizedoxide layer 35 is formed on the chuck 30 for insulating from a wafer, by a surface processing method, such as hard anodizing.
Flaking prevention means 37 is formed on the whole surface of anodizedoxide layer 35. The flaking prevention means 37 prevents flaking or other inferiorities even when a periodic heating and cooling cycle is rapidly repeated.
In the present invention, a polytetrafluoroethylene (PTFE) coating layer having excellent heat-resistance and adhesive strength between wafer and anodized-oxide layer is used as flaking prevention means 37, instead of a kapton tape, as conventionally, which causes a bubble phenomenon.
The fabricating method of the thermo chuck having the aforementioned configuration will now be described.
A first step is for providing a pure aluminum chuck 30 exhibiting high thermal conductivity in order to bear mounted wafers which need to be heated to a high temperature for a lithographic process.
A second step is for hard-anodizing aluminum chuck 35 in order to form anodized-oxide layer 35 on the surface thereof.
A third step is for lapping in order to smooth anodizedoxide layer 35 formed through the above processes.
4 A fourth step is for polytetrafluorethylene (PTFE) coating in order to prevent a flaking phenomenon due to the rapid temperature change of anodized-oxide layer 35, thereby to form a PTFE coating layer 37 having excellent heatresistance and adhesive strength between a mounted wafer and anodized-oxide layer 35.
As described above, according to the present invention, instead of a conventional kapton tape causing a bubbling phenomenon, a PTFE coating layer having excellent heat- resistance and adhesive strength is used as means for preventing the flaking of a thermo chuck which is one of the most important components of a semiconductor fabricating device, thereby eliminating a source of particle contamination on the rear surface of a wafer. As the result, stability and improved quality for the next process are ensured.
Having described a preferred embodiment of the invention with reference to the accompanying drawings, it is to be understood that the present invention is not limited to this embodiment and that various changes and modifications thereof could be effected by one skilled in the art without departing from the scope of the invention.
Claims (4)
1. A contact-type thermo chuck for mounting and heating wafers, comprising:
an anodized-oxide layer formed on the whole surface of said thermo chuck for insulating said wafers and thermo chuck, and flaking prevention means comprising polytetrafluorethylene provided on the whole surface of said anodized-oxide layer for preventing flaking on the surface of said anodized-oxide layer.
2. A contact-type thermo chuck for mounting and heating wafers substantially as herein described with reference to Figure 3 of the accompanying drawings.
3. A method for fabricating a thermo chuck for mounting and heating wafers, comprising the steps of:
providing a chuck of pure aluminum; hard-anodizing said aluminum chuck for forming an anodized-oxide layer on the surface of said aluminum chuck; lapping for planarizing said anodized-oxide layer, and coating said lapped anodized-oxide layer with polytetrafluorethylene to prevent flaking.
4. A method for fabricating a thermo chuck for mounting and heating wafers substantially as herein described with reference to the accompanying drawings.
6
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950013696A KR960043037A (en) | 1995-05-29 | 1995-05-29 | Contact type thermostatic chuck and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9517702D0 GB9517702D0 (en) | 1995-11-01 |
| GB2301480A true GB2301480A (en) | 1996-12-04 |
Family
ID=19415762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9517702A Withdrawn GB2301480A (en) | 1995-05-29 | 1995-08-30 | Thermo chuck for mounting wafers |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH08330399A (en) |
| KR (1) | KR960043037A (en) |
| CN (1) | CN1139766A (en) |
| DE (1) | DE19531699A1 (en) |
| GB (1) | GB2301480A (en) |
| TW (1) | TW344087B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0806798A2 (en) * | 1996-05-08 | 1997-11-12 | Applied Materials, Inc. | Substrate support chuck having a contaminant containment layer and method of fabricating same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4614416B2 (en) * | 2003-05-29 | 2011-01-19 | 日東電工株式会社 | Semiconductor chip manufacturing method and dicing sheet pasting apparatus |
| KR100695203B1 (en) * | 2006-07-31 | 2007-03-16 | 안병돈 | Shaft for transport roller glass having core |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0049588A2 (en) * | 1980-09-30 | 1982-04-14 | Fujitsu Limited | Method and apparatus for dry etching and electrostatic chucking device used therein |
| US4480284A (en) * | 1982-02-03 | 1984-10-30 | Tokyo Shibaura Denki Kabushiki Kaisha | Electrostatic chuck plate |
-
1995
- 1995-05-29 KR KR1019950013696A patent/KR960043037A/en not_active Application Discontinuation
- 1995-08-29 DE DE19531699A patent/DE19531699A1/en not_active Withdrawn
- 1995-08-30 GB GB9517702A patent/GB2301480A/en not_active Withdrawn
- 1995-08-30 TW TW084109048A patent/TW344087B/en active
- 1995-08-30 CN CN95116697A patent/CN1139766A/en active Pending
- 1995-10-17 JP JP26885495A patent/JPH08330399A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0049588A2 (en) * | 1980-09-30 | 1982-04-14 | Fujitsu Limited | Method and apparatus for dry etching and electrostatic chucking device used therein |
| US4480284A (en) * | 1982-02-03 | 1984-10-30 | Tokyo Shibaura Denki Kabushiki Kaisha | Electrostatic chuck plate |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0806798A2 (en) * | 1996-05-08 | 1997-11-12 | Applied Materials, Inc. | Substrate support chuck having a contaminant containment layer and method of fabricating same |
| EP0806798A3 (en) * | 1996-05-08 | 1999-11-17 | Applied Materials, Inc. | Substrate support chuck having a contaminant containment layer and method of fabricating same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08330399A (en) | 1996-12-13 |
| DE19531699A1 (en) | 1996-12-05 |
| GB9517702D0 (en) | 1995-11-01 |
| TW344087B (en) | 1998-11-01 |
| KR960043037A (en) | 1996-12-21 |
| CN1139766A (en) | 1997-01-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |