JPH07211628A - Substrate heater - Google Patents

Substrate heater

Info

Publication number
JPH07211628A
JPH07211628A JP2326594A JP2326594A JPH07211628A JP H07211628 A JPH07211628 A JP H07211628A JP 2326594 A JP2326594 A JP 2326594A JP 2326594 A JP2326594 A JP 2326594A JP H07211628 A JPH07211628 A JP H07211628A
Authority
JP
Japan
Prior art keywords
temperature
recess
hot plate
photomask
depth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2326594A
Other languages
Japanese (ja)
Inventor
Tsuneo Akasaki
恒雄 赤崎
Kaoru Kanda
薫 神田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SIGMA MERUTETSUKU KK
Original Assignee
SIGMA MERUTETSUKU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SIGMA MERUTETSUKU KK filed Critical SIGMA MERUTETSUKU KK
Priority to JP2326594A priority Critical patent/JPH07211628A/en
Publication of JPH07211628A publication Critical patent/JPH07211628A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To attain pattern dimensions with high in-plane uniformity by providing a heating means, a hot plate having a concentric recess, a temperature detecting means, and a temperature regulating means thereby heating a substrate uniformly. CONSTITUTION:A hot plate 1 is heated by means of a heater 2. Temperature of the hot plate 1 is detected by means of a thermocouple and regulated to a constant level by means of a temperature regulator 4. A photomask is mounted on the surface of the hot plate 1 and brought into tight contact therewith or a gap of about 0.1mm is set by inserting a spacer, e.g. a ball. Central temperature of the photomask can be lowered by making a recess in the center of the hot plate 1. The temperature drop depends on the diameter and the depth of recess an in case of a 152 mm square photomask of 6.3 mm deep, a recess of 50 mm diameter and 0.2 mm depth restrains the temperature rise from average temperature within 0.5 deg.C which is significantly low as compared with a case having no recess. Furthermore, temperature distribution can be improved signiticantly by employing a conical recess in the center.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体および液晶パネ
ル用のホトマスク等厚型基板を加熱する加熱装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heating device for heating thick substrates such as photomasks for semiconductors and liquid crystal panels.

【0002】[0002]

【従来の技術】半導体用のホトマスクを例にとり説明す
る。最新の半導体用のホトマスクは、152mm正方で
厚み6.3mmのガラス基板上に約1000オングスト
ロームのクロム膜をスパッタし、その上にレジストを塗
布して電子線描画装置でパターンを描画した後レジスト
現像処理を行い、続いてクロム膜のエッチング処理とレ
ジスト剥離を行って完成する。
2. Description of the Related Art A semiconductor photomask will be described as an example. The latest semiconductor photomask is formed by sputtering a chromium film of about 1000 angstrom on a glass substrate of 152 mm square and a thickness of 6.3 mm, applying a resist on it, drawing a pattern with an electron beam drawing device, and then developing the resist. Then, the chrome film is etched and the resist is removed to complete the process.

【0003】LSIの集積度の向上に伴うパターンの微
細化のため、耐ドライエッチング性が高く、高精度なレ
ジストパターンが得られるレジストとして化学増幅型レ
ジストが開発され実用化が進んでいる。代表的な商品
は、シプレー社のSAL601である。
Due to the miniaturization of patterns accompanying the improvement in the degree of integration of LSIs, chemically amplified resists have been developed and put into practical use as resists having high dry etching resistance and highly accurate resist patterns. A typical product is SAL601 from Shipley.

【0004】化学増幅型レジストは電子線描画した後、
約110℃でベーキングを行いレジストの感度増幅を行
う。ベーキング時のホトマスク上面の温度の均一性によ
りパターン寸法が変化するので全面にわたって均一な温
度でベーキングすることが必要である。
After the chemically amplified resist is drawn with an electron beam,
Baking is performed at about 110 ° C. to amplify the sensitivity of the resist. Since the pattern size changes depending on the temperature uniformity of the upper surface of the photomask during baking, it is necessary to perform baking at a uniform temperature over the entire surface.

【0005】図3は従来の基板加熱装置の縦断面図であ
る。
FIG. 3 is a vertical sectional view of a conventional substrate heating apparatus.

【0006】熱板1はヒータ2で加熱される。熱電対3
で熱板1の温度を検出し、温度調節器4で一定の温度例
えば110℃に温度調節する。ホトマスク10は熱板1
の上面に載置されるが、密着して載置する場合とボール
等のスペーサを挿入し、0.1mm程度のギャップをと
って載置する場合がある。
The heating plate 1 is heated by the heater 2. Thermocouple 3
The temperature of the hot plate 1 is detected by, and the temperature is adjusted by the temperature controller 4 to a constant temperature, for example, 110 ° C. Photomask 10 is hot plate 1
It may be placed on the upper surface of the device, but may be placed in close contact or may be placed with a gap of about 0.1 mm by inserting a spacer such as a ball.

【0007】この従来の加熱装置で152mm正方、厚
み6.3mmのホトマスクを加熱すると、ホトマスク1
0の材質が熱伝導性の悪いガラスであるため、熱板の温
度は均一であってもホトマスク10の上面の温度は平均
温度に対し中央部の温度が2〜3℃高く同心円状に分布
する。従って、中央部のレジスト感度が大きくなり、見
かけ上の露光部寸法が大きくなってホトマスク10の面
内均一性が悪くなるという欠陥がある。
When a photomask having a size of 152 mm square and a thickness of 6.3 mm is heated by this conventional heating device, the photomask 1
Since the material of No. 0 is glass having poor heat conductivity, even if the temperature of the hot plate is uniform, the temperature of the upper surface of the photomask 10 is concentrically distributed with the center temperature being 2-3 ° C. higher than the average temperature. . Therefore, there is a defect that the resist sensitivity in the central portion is increased, the apparent exposed portion size is increased, and the in-plane uniformity of the photomask 10 is deteriorated.

【0008】[0008]

【発明が解決しようとする課題】本発明の目的は、基板
を均一に加熱し面内均一性の良いパターン寸法を得るこ
とを可能とした基板加熱装置を提供することである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate heating apparatus capable of uniformly heating a substrate and obtaining a pattern dimension with good in-plane uniformity.

【0009】[0009]

【問題を解決するための手段】本発明は、加熱手段と同
心円状窪みを備えた熱板と温度検出手段と温度調節手段
とからなることを特徴とする。
The present invention is characterized in that it comprises a heating means, a hot plate having concentric recesses, a temperature detecting means, and a temperature adjusting means.

【0010】[0010]

【実施例】以下本発明を図面を参照して説明する。図1
aは本発明の基板加熱装置の第1の実施例の縦断面図、
図1bはその平面図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. Figure 1
a is a longitudinal sectional view of the first embodiment of the substrate heating apparatus of the present invention,
FIG. 1b is a plan view thereof.

【0011】熱板1の温度調節は図3の場合と同様に行
う。熱板1の中央部に窪み5をつけることによりホトマ
スク10の中心部の温度を下げることができる。窪みの
直径と深さにより低下する温度は変化するが、152m
m正方で厚み6.3mmのホトマスクの場合、直径を5
0mm、深さを0.2mmとした時の中心の温度は平均
温度に対し0.5℃高く、窪みがない場合に比較し大幅
に小さくなった。
The temperature of the hot plate 1 is adjusted in the same manner as in FIG. By forming the depression 5 in the central portion of the heating plate 1, the temperature of the central portion of the photomask 10 can be lowered. The temperature decreases depending on the diameter and depth of the depression, but
In the case of a photomask with a square size of 6.3 mm and a thickness of 6.3 mm, the diameter is 5
The temperature at the center when the depth was 0 mm and the depth was 0.2 mm was 0.5 ° C. higher than the average temperature, and was significantly smaller than when there was no dent.

【0012】図2aは本発明の基板加熱装置の第2の実
施例の縦断面図、図2bはその平面図である。
FIG. 2a is a vertical sectional view of a second embodiment of the substrate heating apparatus of the present invention, and FIG. 2b is a plan view thereof.

【0013】ホトマスク10の温度分布に合わせて同心
円のリング状窪みを7および8のように、1本または複
数本付加することにより一層均一性の良い基板加熱装置
にすることができる。
By adding one or a plurality of concentric ring-shaped depressions 7 and 8 in accordance with the temperature distribution of the photomask 10, a more uniform substrate heating apparatus can be obtained.

【0014】また、中心の窪みを円錐形窪み6とするこ
とにより、窪みに温度勾配をもたせることができるので
ホトマスク10の温度分布が一層改善される。
Further, by making the central depression a conical depression 6, it is possible to give the depression a temperature gradient, so that the temperature distribution of the photomask 10 is further improved.

【0015】上記説明では、熱板の窪みが円形である場
合について述べたが、本発明はこれに限定されるもので
はなく、多角形の窪みであっても本発明を実現できるこ
とは明らかである。
In the above description, the case where the depression of the hot plate is circular is described, but the present invention is not limited to this, and it is obvious that the present invention can be realized even with a polygonal depression. .

【0016】上記説明では、レジストが化学増幅型レジ
ストの場合について述べたが、本発明はこれに限定され
るものではなくベーキング温度の均一性が要求されるレ
ジストについては全く同様に適用できることは明らかで
ある。
In the above description, the case where the resist is a chemically amplified resist is described, but the present invention is not limited to this, and it is apparent that the present invention can be applied to a resist which requires a uniform baking temperature in exactly the same manner. Is.

【0017】上記説明では、ホトマスクを例にとり述べ
たが、半導体基板、液晶パネル基板であっても全く同様
に実現できることは明らかである。
In the above description, the photomask is taken as an example, but it is obvious that the same can be realized with a semiconductor substrate or a liquid crystal panel substrate.

【0018】[0018]

【発明の効果】以上説明したように、本発明は次のよう
な効果を奏するものである。基板を均一に加熱し面内均
一性の良いパターン寸法が得られる。
As described above, the present invention has the following effects. By heating the substrate uniformly, a pattern dimension with good in-plane uniformity can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1a】本発明の基板加熱装置の第1の実施例の縦断
面図。
FIG. 1a is a longitudinal sectional view of a first embodiment of a substrate heating apparatus of the present invention.

【図1b】本発明の基板加熱装置の第1の実施例の平面
図。
FIG. 1b is a plan view of the first embodiment of the substrate heating apparatus of the present invention.

【図2a】本発明の基板加熱装置の第2の実施例の縦断
面図。
FIG. 2a is a vertical sectional view of a second embodiment of the substrate heating apparatus of the present invention.

【図2b】本発明の基板加熱装置の第2の実施例の平面
図。
FIG. 2b is a plan view of the second embodiment of the substrate heating apparatus of the present invention.

【図3】従来の基板加熱装置の縦断面図。FIG. 3 is a vertical sectional view of a conventional substrate heating apparatus.

【符号の説明】[Explanation of symbols]

1…熱板、2…ヒータ、3…熱電対、4…温度調節器、
5、6、7、8…窪み、10…ホトマスク。
1 ... Hot plate, 2 ... Heater, 3 ... Thermocouple, 4 ... Temperature controller,
5, 6, 7, 8 ... Dimples, 10 ... Photomask.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 基板を加熱する加熱装置において、加熱
手段と同心円状窪みを備えた熱板と温度検出手段と温度
調節手段とからなることを特徴とした基板加熱装置。
1. A substrate heating apparatus for heating a substrate, comprising: a heating means, a heating plate having concentric circular depressions, a temperature detecting means, and a temperature adjusting means.
【請求項2】 前記窪みが深さ0.05〜0.5mmの
円形であることを特徴とした請求項1記載の基板加熱装
置。
2. The substrate heating apparatus according to claim 1, wherein the depression is circular with a depth of 0.05 to 0.5 mm.
【請求項3】 前記窪みが深さ0.05〜0.5mmの
円錐形であることを特徴とした請求項1記載の基板加熱
装置。
3. The substrate heating apparatus according to claim 1, wherein the recess has a conical shape with a depth of 0.05 to 0.5 mm.
【請求項4】 前記窪みが深さ0.05〜0.5mmの
リングであることを特徴とした請求項1記載の基板加熱
装置。
4. The substrate heating apparatus according to claim 1, wherein the recess is a ring having a depth of 0.05 to 0.5 mm.
JP2326594A 1994-01-24 1994-01-24 Substrate heater Pending JPH07211628A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2326594A JPH07211628A (en) 1994-01-24 1994-01-24 Substrate heater

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2326594A JPH07211628A (en) 1994-01-24 1994-01-24 Substrate heater

Publications (1)

Publication Number Publication Date
JPH07211628A true JPH07211628A (en) 1995-08-11

Family

ID=12105777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2326594A Pending JPH07211628A (en) 1994-01-24 1994-01-24 Substrate heater

Country Status (1)

Country Link
JP (1) JPH07211628A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5817178A (en) * 1995-05-30 1998-10-06 Kabushiki Kaisha Toshiba Apparatus for baking photoresist applied on substrate
US6399926B2 (en) 2000-04-03 2002-06-04 Sigmameltec Ltd. Heat-treating apparatus capable of high temperature uniformity

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5817178A (en) * 1995-05-30 1998-10-06 Kabushiki Kaisha Toshiba Apparatus for baking photoresist applied on substrate
US6033474A (en) * 1995-05-30 2000-03-07 Kabushiki Kaisha Toshiba Apparatus for baking photoresist applied on substrate
US6051371A (en) * 1995-05-30 2000-04-18 Kabushiki Kaisha Toshiba Method for baking photoresist applied on substrate
US6399926B2 (en) 2000-04-03 2002-06-04 Sigmameltec Ltd. Heat-treating apparatus capable of high temperature uniformity

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