JPH03245883A - Method for washing semiconductor preparing apparatus - Google Patents
Method for washing semiconductor preparing apparatusInfo
- Publication number
- JPH03245883A JPH03245883A JP4236690A JP4236690A JPH03245883A JP H03245883 A JPH03245883 A JP H03245883A JP 4236690 A JP4236690 A JP 4236690A JP 4236690 A JP4236690 A JP 4236690A JP H03245883 A JPH03245883 A JP H03245883A
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- aqueous solution
- reaction
- heated
- fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims description 23
- 238000005406 washing Methods 0.000 title abstract description 3
- 239000012530 fluid Substances 0.000 claims abstract description 48
- 239000007864 aqueous solution Substances 0.000 claims abstract description 37
- 230000002378 acidificating effect Effects 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000011282 treatment Methods 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 239000003960 organic solvent Substances 0.000 claims description 8
- 230000008016 vaporization Effects 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 abstract description 13
- 239000002904 solvent Substances 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 31
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 238000001947 vapour-phase growth Methods 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 ammonium peroxide Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- LBVWYGNGGJURHQ-UHFFFAOYSA-N dicarbon Chemical compound [C-]#[C+] LBVWYGNGGJURHQ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体製造装置の洗浄方法に間し、
半導体製造装置において主反応処理がなされた後、また
は、主反応処理に続いて高周波洗浄がなされた後に、な
お、反応室内に残留するガス及び反応室内面に付着する
反応生成物を完全に除去することができる半導体製造装
置の洗浄方法を提供することにあり、
少なくとも、流体の流入手段並びに排出手段及び昇温手
段を有する容器からなる半導体製造装置の反応室に被処
理体を装入して主反応処理をなした後、常温または加熱
されたアルカリ性水溶液と酸性水溶液と純水とを順次窒
素ガスと＼もに前記の流体の流入手段を介して前記の反
応室に導入すると−もに前記の流体の排出手段を介して
排出し、次いで、前記の反応室を前記の昇温手段をもっ
て昇温し、常温または加熱された有機溶剤と純水とを順
次窒素ガスと＼もに前記の流体の流入手段を介して前記
の反応室に導入すると−もに前記の流体の排出手段を介
して排出し、前記の反応室を前記の昇温手段をもって昇
温し乾燥するように構成する。[Detailed Description of the Invention] [Summary] During the method for cleaning semiconductor manufacturing equipment, after main reaction treatment is performed in the semiconductor manufacturing equipment, or after high frequency cleaning is performed following the main reaction treatment, there is still no reaction. An object of the present invention is to provide a cleaning method for semiconductor manufacturing equipment that can completely remove gas remaining in the chamber and reaction products adhering to the inside of the reaction chamber, and which includes at least a fluid inflow means, a discharge means, and a temperature raising means. After the object to be processed is charged into a reaction chamber of a semiconductor manufacturing apparatus consisting of a container having a container and subjected to the main reaction treatment, an alkaline aqueous solution, an acidic aqueous solution, and pure water, which are at room temperature or heated, are sequentially added to nitrogen gas and the The fluid is introduced into the reaction chamber through the fluid inflow means and discharged through the fluid discharge means, and then the temperature of the reaction chamber is raised by the temperature raising means to bring it to room temperature or heating. The organic solvent and pure water, together with nitrogen gas, are sequentially introduced into the reaction chamber through the fluid inflow means, and both are discharged through the fluid discharge means to complete the reaction. The chamber is configured to be heated and dried using the temperature increasing means.
（産業上の利用分野〕
本発明は半導体製造装置の洗浄方法、特に、気相成長装
置・ドライエツチング装置・スパッタ装置等の半導体製
造装置において、主反応処理終了後に反応室内に残留し
ているガスを完全に除去すると＼もに、反応室内面に付
着している反応生成物を完全に剥離・除去する洗浄方法
に関する。(Industrial Application Field) The present invention relates to a method for cleaning semiconductor manufacturing equipment, and in particular, to a method for cleaning semiconductor manufacturing equipment such as a vapor phase growth equipment, dry etching equipment, and sputtering equipment, which cleans gas remaining in a reaction chamber after completion of main reaction processing. It also relates to a cleaning method that completely peels off and removes reaction products adhering to the inner surface of a reaction chamber.
〔従来の技術〕
常圧または減圧気相成長装置・ドライエンチング装置・
スパッタ装置等の半導体製造装置の反応室に被処理体を
装入し、気相成長・エツチング・スバ、夕等の主反応処
理をなした後、三フッ化窒素（ＮＦ３）等のガスを反応
室内に導入し、これに高周波電力を供給して上記のガス
をプラズマ化し、このプラズマを利用して、反応室内に
残留しているガスを除去し、同時に、反応室内面に付着
している反応生成物を除去する方法が知られている。こ
のガスと反応生成物との除去方法を、高周波洗浄法と云
う。[Conventional technology] Normal pressure or reduced pressure vapor phase growth equipment, dry enching equipment,
The object to be processed is loaded into the reaction chamber of semiconductor manufacturing equipment such as sputtering equipment, and after main reaction treatments such as vapor phase growth, etching, submerging, and evening treatment are performed, a gas such as nitrogen trifluoride (NF3) is reacted. The gas is introduced into the chamber, and high-frequency power is supplied to it to turn the above gas into plasma, and this plasma is used to remove the gas remaining in the reaction chamber, and at the same time remove the reaction gas that has adhered to the inside of the reaction chamber. Methods of removing the products are known. This method of removing gas and reaction products is called a high frequency cleaning method.
通常、か＼る高周波洗浄法を約１時間実行した後、さら
に、反応室になお付着残留している反応生成物の剥離・
除去とフン素等の残留ガスを除去するため、アンモニア
等のアルカリ性水溶液とフン酸等の酸性水溶液とを加熱
して真空または常圧の反応室内に窒素ガスと−もに導入
して洗浄し、しかる後、反応室内を昇温して乾燥させて
いる。Usually, after performing the high frequency cleaning method for about 1 hour, the reaction products still attached to the reaction chamber are removed and removed.
In order to remove residual gases such as fluorine, an alkaline aqueous solution such as ammonia and an acidic aqueous solution such as fluoric acid are heated and introduced together with nitrogen gas into a vacuum or normal pressure reaction chamber for cleaning. Thereafter, the temperature inside the reaction chamber is raised to dry it.
〔発明が解決しようとする課題］
アルカリ性水溶液と酸性水溶液とを加熱して真空または
常圧の反応室内に窒素ガスと−もに導入して洗浄した後
、加熱器を使用して反応室内部を昇温しで乾燥させ、さ
らには、水等を滲み込ませたガーゼ等を使用して反応室
内面を水拭きしているので、反応室内面に付着している
反応生成物は十分除去されるが、稀アンモニア水溶液等
のアルカリ性水溶液の一部が反応室内面に付着残留し、
これが汚染の原因となっている。[Problem to be solved by the invention] After heating an alkaline aqueous solution and an acidic aqueous solution and introducing nitrogen gas into a reaction chamber under vacuum or normal pressure for cleaning, the inside of the reaction chamber is heated using a heater. The inside of the reaction chamber is dried by raising the temperature, and the inside of the reaction chamber is wiped with water using gauze soaked with water, so the reaction products adhering to the inside of the reaction chamber are sufficiently removed. However, some of the alkaline aqueous solution such as dilute ammonia aqueous solution remains attached to the inside of the reaction chamber.
This causes pollution.
本発明の目的は、この欠点を解消することにあり、半導
体製造装！において主反応処理がなされた後、または、
主反応処理に続いて高周波洗浄がなされた後に、なお、
反応室内に残留しているガス及び反応室内面に付着して
いる反応生成物を完全に除去することができる半導体製
造装置の洗浄方法を擾供することにある。The purpose of the present invention is to eliminate this drawback, and to improve semiconductor manufacturing equipment! After the main reaction treatment has been carried out in, or
After the main reaction treatment is followed by high frequency cleaning,
An object of the present invention is to provide a method for cleaning semiconductor manufacturing equipment that can completely remove gas remaining in a reaction chamber and reaction products adhering to the inner surface of the reaction chamber.
上記の目的は、少なくとも、流体の流入手段（８）並び
に排出手段（１３）及び昇温手段（３）を有する容器か
らなる半導体製造装置の反応室（１）に被処理体（５）
を装入して主反応処理をなした後、常温または加熱され
たアルカリ性水溶液と酸性水溶液と純水とを順次窒素ガ
スと＼もに前記の流体の流入手段（８）を介して前記の
反応室（１）に導入すると−もに前記の流体の排出手段
（１３）を介して排出し、次いで、前記の反応室（１）
を前記の昇温手段（３）をもって昇温し、常温または加
熱された有機溶剤と純水とを順次窒素ガスと−もに前記
の流体の流入手段（８）を介して前記の反応室（１）に
導入すると＼もに前Ｓ己の流体の排出手段（１３）を介
して排出し、最後に、前記の反応室（１）を前記の昇温
手段（３）をもって昇温し乾燥する工程を有する半導体
製造装置の洗浄方法によって達成される。The above purpose is to provide a reaction chamber (1) of a semiconductor manufacturing apparatus that includes a container having at least a fluid inflow means (8), a fluid discharge means (13), and a temperature raising means (3).
After carrying out the main reaction treatment, the alkaline aqueous solution, the acidic aqueous solution, and the pure water, which are at room temperature or heated, are sequentially mixed with nitrogen gas through the fluid inflow means (8) to carry out the above reaction. Once introduced into the chamber (1), the fluid is discharged via the discharge means (13), and then the fluid is discharged through the said reaction chamber (1).
is heated by the temperature raising means (3), and the room temperature or heated organic solvent and pure water are sequentially introduced together with nitrogen gas into the reaction chamber (2) through the fluid inflow means (8). When introduced into 1), the fluid is discharged through the fluid discharge means (13), and finally, the reaction chamber (1) is heated and dried using the temperature raising means (3). This is achieved by a method for cleaning semiconductor manufacturing equipment that includes a process.
なお、前記の常温または加熱されたアルカリ性水溶液と
酸性水溶液とをバブラ等の気化手段を使用して気体状と
なし、この気体状のアルカリ性水溶液と酸性水溶液とを
前記の流体の流入手段（８）を介して前記の反応室（１
）に導入してもよい。Note that the alkaline aqueous solution and the acidic aqueous solution, which are at room temperature or heated, are made into a gaseous state using a vaporizing means such as a bubbler, and the gaseous alkaline aqueous solution and the acidic aqueous solution are transferred to the fluid inflow means (8). via the reaction chamber (1
) may be introduced.
従来、半導体製造装置において、薄膜成長等の主反応処
理がなされた後、または、主反応処理に引き続いて高周
波洗浄がなされた後に、半導体製造装置の反応室にアル
カリ性水溶液と酸性水溶液とを導入して洗浄しているが
、か−る洗浄方法をもってしては反応生成物は完全には
除去されず、また、アンモニア等のガスが反応室内に残
留し、汚染の原因となる。Conventionally, in semiconductor manufacturing equipment, an alkaline aqueous solution and an acidic aqueous solution are introduced into the reaction chamber of the semiconductor manufacturing equipment after main reaction processing such as thin film growth or after high frequency cleaning is performed following the main reaction processing. However, such cleaning methods do not completely remove reaction products, and gases such as ammonia remain in the reaction chamber, causing contamination.
本発明に係る半導体製造装置の洗浄方法においては、ア
ルカリ性水溶液と酸性水溶液とを導入して反応室を洗浄
した後に、常温または加熱されたイソプロピルアルコー
ル・エチルアルコール・ＯＭＲストリンパ等の有機溶剤
を窒素ガスと＼もに流体の流入手段８を介して反応室１
内に導入して洗浄することにより、反応室１を分解して
ウェット洗浄することなく、掻めて闇単に反応室１内面
に付着した反応生成物を完全に剥離・除去すると−もに
、反応室１内に残留するアンモニア等の残留ガスを完全
に除去して汚染を防止することができる。また、洗浄の
自動化も可能になる。In the method for cleaning semiconductor manufacturing equipment according to the present invention, after a reaction chamber is cleaned by introducing an alkaline aqueous solution and an acidic aqueous solution, an organic solvent such as isopropyl alcohol, ethyl alcohol, OMR stripper, etc. at room temperature or heated is removed using nitrogen gas. and the reaction chamber 1 via the fluid inlet means 8.
By introducing the reaction product into the interior of the reaction chamber 1 and cleaning it, the reaction products adhering to the inner surface of the reaction chamber 1 can be completely peeled off and removed by simply scraping the reaction chamber 1 without disassembling the reaction chamber 1 and performing wet cleaning. Residual gas such as ammonia remaining in the chamber 1 can be completely removed to prevent contamination. It also becomes possible to automate cleaning.
以下、図面を参照しつ一２本発明の一実施例に係る半導
体製造装置の洗浄方法について、減圧気相成長装置を使
用する場合を例にして説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for cleaning semiconductor manufacturing equipment according to an embodiment of the present invention will be described below with reference to the drawings, taking as an example a case where a low pressure vapor phase growth apparatus is used.
第１図参照
第１図は、減圧気相成長装置の構成を示す断面図である
。図において、１は反応室であり、２は真空手段１２に
接続されているガス排気口である。See FIG. 1 FIG. 1 is a sectional view showing the structure of a reduced pressure vapor phase growth apparatus. In the figure, 1 is a reaction chamber, and 2 is a gas exhaust port connected to vacuum means 12.
反応室ｌの側面、床、天井、及び、ガス排気口２の内面
は、絶縁板１０をもって絶縁されている。３は昇温手段
であり、４はウェーハ５を載置するサセプタであり、６
は反応ガス導入管であり、７は反応ガスをウェーハ５の
全面に向けて均一に吹き出すガス吹き出し盤である。８
は流体の流入手段であり、リング状シャワー管８１とリ
ング状シャワー管８２と螺旋状シャワー管８３とからな
っている。The side surfaces, floor, ceiling, and inner surface of the gas exhaust port 2 of the reaction chamber 1 are insulated by an insulating plate 10. 3 is a temperature raising means, 4 is a susceptor on which the wafer 5 is placed, and 6 is a susceptor on which the wafer 5 is placed.
7 is a reaction gas introduction pipe, and 7 is a gas blowing plate for uniformly blowing out the reaction gas over the entire surface of the wafer 5. 8
is a fluid inflow means, which is composed of a ring-shaped shower pipe 81, a ring-shaped shower pipe 82, and a spiral shower pipe 83.
９は電掻板であり、［１］は加熱器である。ガス排気口
２には流体の流入手段８から導入された流体を排出する
排出手段１３が接続されている。9 is an electric scraping board, and [1] is a heater. A discharge means 13 for discharging the fluid introduced from the fluid inflow means 8 is connected to the gas exhaust port 2 .
第２図（ａ）（ｂ）参照
第２図（ａ）は、リング状シャワー管８１及びリング状
シャワー管８２の構成を示す平面図であり、第２図（ｂ
）は、その側面図である。リング状のパイプの全周に、
パイプの中に流入された流体を放出する流体放出孔８４
が多数設けられている。See FIGS. 2(a) and 2(b) FIG. 2(a) is a plan view showing the structure of the ring-shaped shower pipe 81 and the ring-shaped shower pipe 82, and FIG.
) is its side view. Around the entire circumference of the ring-shaped pipe,
Fluid discharge hole 84 for discharging fluid flowed into the pipe
There are many.
第３図（ａ）（ｂ）参照
第３図（ａ）は、螺旋状シャワー管８３の平面図であり
、第３図（ｂ）は、その側面図である。螺旋状のパイプ
に、パイプの中に流入された流体を放出する流体放出孔
８４が多数設けられている。See FIGS. 3(a) and 3(b) FIG. 3(a) is a plan view of the spiral shower pipe 83, and FIG. 3(b) is a side view thereof. A large number of fluid discharge holes 84 are provided in the spiral pipe to discharge fluid that has flowed into the pipe.
反応室１内のサセプタ４にウェーハ５を載置して、昇温
手段３を使用して昇温し、真空手段１２を使用して反応
室１を真空にした後、反応ガス導入管６から例えばシラ
ン（ＳｉＨ４）とホスフィン（ＰＨｚ）とを導入してウ
ェーハ５上にリンのドープされたシリコン層を成長した
後、三フッ化窒素（ＮＦ３）ガスを流体の流入手段８を
介して反応室１内及びガス排気口２内に導入してサセプ
タ４とｉ！掻板９との間に高周波電力を印加し、前記の
三フッ化窒素（ＮＦ：ｌ）をプラズマ化して反応室１の
側壁、床面及び反応ガス排気口２の壁面に付着している
反応生成物を除去する。After placing the wafer 5 on the susceptor 4 in the reaction chamber 1, raising the temperature using the temperature raising means 3, and evacuating the reaction chamber 1 using the vacuum means 12, the reaction gas is introduced from the reaction gas introduction pipe 6. For example, after a phosphorus-doped silicon layer is grown on the wafer 5 by introducing silane (SiH4) and phosphine (PHz), nitrogen trifluoride (NF3) gas is introduced into the reaction chamber through the fluid inflow means 8. 1 and the gas exhaust port 2 and connect it to the susceptor 4 and i! High-frequency power is applied between the scratching plate 9 and the nitrogen trifluoride (NF:l) mentioned above to plasma, and the reaction adhering to the side wall and floor surface of the reaction chamber 1 and the wall surface of the reaction gas exhaust port 2 is removed. Remove product.
次いで、アンモニア・過酸化アンモニア水溶液等のアル
カリ性水溶液と、フン酸・過硫酸・硝酸等の酸性水溶液
とを、常温において、または、加熱器［１］を介して加
熱して、窒素ガスと−もに流体の流入手段８を構成する
リング状シャワー管８１とリング状シャワー管８２と螺
旋状シャワー管８３とを介して反応室ｌ及びガス排気口
２内に導入すると−もに、流体の排出手段１３を介して
排出する。Next, an alkaline aqueous solution such as ammonia/ammonium peroxide aqueous solution and an acidic aqueous solution such as hydrofluoric acid, persulfuric acid, nitric acid, etc. are heated at room temperature or via a heater [1] to combine with nitrogen gas. The fluid is introduced into the reaction chamber 1 and the gas exhaust port 2 through the ring-shaped shower pipe 81, the ring-shaped shower pipe 82, and the spiral shower pipe 83 that constitute the fluid inflow means 8, and the fluid is discharged from the reaction chamber 1 through the ring-shaped shower pipe 81, the ring-shaped shower pipe 82, and the spiral shower pipe 83, which constitute the fluid inflow means 8. 13.
次に、同様に純水を流体の流入手段８を介して反応室ｌ
及びガス排気口２内に導入すると〜もに、流体の排出手
段１３を介して排出する。Next, similarly, pure water is introduced into the reaction chamber via the fluid inflow means 8.
The fluid is introduced into the gas exhaust port 2 and discharged via the fluid discharge means 13.
次いで、反応室１内を昇温手段３を使用して１２０〜２
５０″Ｃ程度に昇温した後、常温または加熱されたイソ
プロピルアルコール・エチルアルコール・ＯＭＲストリ
ッパ等の有機溶剤を窒素ガスと−もに流体の流入手段８
を介して反応室１及びガス排気口２に導入すると−もに
、流体の排出手段１３を介して排出した後、純水を、常
温において、または、加熱器［１］を介して、流体の流
入手段８を介して窒素ガスと＼もに反応室１及びガス排
気口２内に導入すると＼もに、流体の排出手段１３を介
して排出した後、昇温手段３を使用して反応室１内を昇
温し、乾燥する。Next, the inside of the reaction chamber 1 is heated to 120 to 2
After the temperature has been raised to about 50"C, a fluid inflow means 8 in which a room temperature or heated organic solvent such as isopropyl alcohol, ethyl alcohol, OMR stripper, etc. is mixed with nitrogen gas.
After introducing the pure water into the reaction chamber 1 and the gas exhaust port 2 through the fluid discharge means 13, the pure water is introduced into the reaction chamber 1 and the gas exhaust port 2 through the fluid discharge means 13. Nitrogen gas and nitrogen gas are introduced into the reaction chamber 1 and the gas exhaust port 2 through the inflow means 8, and after being discharged through the fluid discharge means 13, the temperature raising means 3 is used to cool the reaction chamber. Raise the temperature inside 1 and dry it.
アルカリ性水溶液・酸性水溶液・有機溶剤、及び、純水
を流体の流入手段８のリング状シャワー管８１、リング
状シャワー管８２、螺旋状シャワー管８３を介して反応
室１内及びガス排気口２内のすべての領域に放出するこ
とによって、反応室１及びガス排気口２に付着している
反応生成物は完成に剥離・除去され、また、反応室１内
に残留するアンモニア等の残留ガスも完全に除去される
。Alkaline aqueous solution, acidic aqueous solution, organic solvent, and pure water are introduced into the reaction chamber 1 and the gas exhaust port 2 through the ring-shaped shower pipe 81, ring-shaped shower pipe 82, and spiral shower pipe 83 of the fluid inflow means 8. By discharging to all areas of the reaction chamber 1 and the gas exhaust port 2, the reaction products adhering to the reaction chamber 1 and the gas exhaust port 2 are completely peeled off and removed, and residual gas such as ammonia remaining in the reaction chamber 1 is also completely removed. will be removed.
なお、前記の洗浄工程を繰り返し実行するか、または、
洗浄時間を長くすることによって、洗浄にともなって発
生するパーティクルも完全に除去される。また、三フン
化窒素（ＮＦ、）に代えて、四フッ化炭素（ＣＦ、）と
酸素との混合物または六フッ化二炭素（Ｃ，Ｆ、）と酸
素との混合物等を使用してもよい。In addition, the above-mentioned washing step may be repeatedly performed, or
By lengthening the cleaning time, particles generated during cleaning can also be completely removed. Also, instead of nitrogen trifluoride (NF, ), a mixture of carbon tetrafluoride (CF, ) and oxygen or a mixture of dicarbon hexafluoride (C, F, ) and oxygen, etc. may be used. good.
さらに、アルカリ性水溶液と酸性水溶液と純水とを予め
混合してから流体の流入手段８を介して窒素ガスと＼も
に反応室１内に導入してもよく、また、これらの液をそ
れぞれ窒素ガスを使用するバブラを使用して気体状にし
た後、流入手段８を介して反応室１内に導入してもよい
。Further, the alkaline aqueous solution, the acidic aqueous solution, and pure water may be mixed in advance and then introduced together with nitrogen gas into the reaction chamber 1 via the fluid inflow means 8. It may be introduced into the reaction chamber 1 via the inlet means 8 after being made into a gas using a gas bubbler.
以上説明せるとおり、本発明に係る半導体製造装置の洗
浄方法においては、半導体製造袋！に被処理体を装入し
、主反応処理をなした後、または、主反応処理に続いて
三フン化窒素を使用する高周波洗浄をなした後に、アル
カリ性水溶液と酸性水溶液とを反応室に導入して洗浄す
る工程に加えて、有機溶剤を流体の流入手段を介して反
応室に導入して洗浄することによって、反応室を解体し
て清掃する工程を必要とすることなく、比較的短時間で
反応室内面に付着した反応生成物は完全に剥離除去され
、また、アンモニア等の残留ガスも完全に除去される。As explained above, in the method for cleaning semiconductor manufacturing equipment according to the present invention, semiconductor manufacturing bags! After charging the object to be treated and performing the main reaction treatment, or following the main reaction treatment and performing high frequency cleaning using nitrogen trifluoride, an alkaline aqueous solution and an acidic aqueous solution are introduced into the reaction chamber. By introducing the organic solvent into the reaction chamber through the fluid inflow means in addition to the cleaning process, cleaning can be carried out in a relatively short period of time without requiring the process of disassembling and cleaning the reaction chamber. The reaction products adhering to the inner surface of the reaction chamber are completely peeled off and residual gases such as ammonia are also completely removed.
この結果、この半導体製造装置を使用して半導体装１を
製造する場合の汚染が防止され、製造歩留りが著しく同
上する。As a result, contamination is prevented when the semiconductor device 1 is manufactured using this semiconductor manufacturing apparatus, and the manufacturing yield is significantly improved.
第１図は、本発明の一実施例に係る半導体製造装置の洗
浄方法に使用される減圧気相成長装置の構成図である。
第２図（ａ）は、リング状シャワー管の平面図であり、
第２図（ｂ）は、その側面図である。
第３図（ａ）は、螺旋状シャワー管の平面図であり、第
３図（ｂ）は、その側面図である。
・・反応室、
・・ガス排気口、
・・加熱手段、
・・サセプタ、
・・被処理体、
反応ガス供給口、
・・ガス吹き出し盤、
・・流体の流入手段、
８２・・・リング状シャワー管、
・・螺旋状シャワー管、
・・流体放出孔、
・・電極板、
・・絶縁板、
・・加熱器、
・・真空手段、
・・流体の排出手段。FIG. 1 is a block diagram of a reduced pressure vapor phase growth apparatus used in a method for cleaning semiconductor manufacturing equipment according to an embodiment of the present invention. FIG. 2(a) is a plan view of a ring-shaped shower pipe,
FIG. 2(b) is a side view thereof. FIG. 3(a) is a plan view of the spiral shower pipe, and FIG. 3(b) is a side view thereof. ...Reaction chamber, ...Gas exhaust port, ...Heating means, ...Susceptor, ...Object to be processed, Reaction gas supply port, ...Gas blowing board, ...Fluid inflow means, 82...Ring shape Shower pipe, ... spiral shower pipe, ... fluid discharge hole, ... electrode plate, ... insulating plate, ... heater, ... vacuum means, ... fluid discharge means.
Claims (1)
段（１３）及び昇温手段（３）を有する容器からなる半
導体製造装置の反応室（１）に被処理体（５）を装入し
て主反応処理をなした後、常温または加熱されたアルカ
リ性水溶液と酸性水溶液と純水とを順次窒素ガスとゝも
に前記流体の流入手段（８）を介して前記反応室（１）
に導入するとゝもに前記流体の排出手段（１３）を介し
て排出し、 前記反応室（１）を前記昇温手段（３）をもって昇温し
、常温または加熱された有機溶剤と純水とを順次窒素ガ
スとゝもに前記流体の流入手段（８）を介して前記反応
室（１）に導入するとゝもに前記流体の排出手段（１３
）を介して排出し、前記反応室（１）を前記昇温手段（
３）をもって昇温し乾燥する 工程を有することを特徴とする半導体製造装置の洗浄方
法。 ［２］前記常温または加熱されたアルカリ性水溶液と酸
性水溶液とを気化手段を使用して気体状となし、該気体
状のアルカリ性水溶液と酸性水溶液とを前記流体の流入
手段（８）を介して前記反応室（１）に導入することを
特徴とする請求項１記載の半導体製造装置の洗浄方法。[Scope of Claims] [1] The object to be processed ( 5) is charged and the main reaction treatment is carried out, the alkaline aqueous solution, the acidic aqueous solution, and the pure water, which are at room temperature or heated, are sequentially added to the reaction through the fluid inflow means (8) together with nitrogen gas. Room (1)
The organic solvent and pure water are discharged through the fluid discharge means (13), the temperature of the reaction chamber (1) is raised by the temperature raising means (3), and the organic solvent and pure water are heated at room temperature or heated. is sequentially introduced into the reaction chamber (1) together with nitrogen gas through the fluid inlet means (8), and then the fluid discharge means (13) is introduced into the reaction chamber (1).
), and the reaction chamber (1) is discharged through the temperature increasing means (
3) A method for cleaning semiconductor manufacturing equipment, comprising a step of raising the temperature and drying. [2] The room temperature or heated alkaline aqueous solution and acidic aqueous solution are made into a gaseous state using a vaporizing means, and the gaseous alkaline aqueous solution and acidic aqueous solution are passed through the fluid inflow means (8) to the The method for cleaning semiconductor manufacturing equipment according to claim 1, characterized in that the cleaning method is introduced into a reaction chamber (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2042366A JP3020065B2 (en) | 1990-02-26 | 1990-02-26 | Semiconductor manufacturing apparatus cleaning method and semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2042366A JP3020065B2 (en) | 1990-02-26 | 1990-02-26 | Semiconductor manufacturing apparatus cleaning method and semiconductor manufacturing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03245883A true JPH03245883A (en) | 1991-11-01 |
| JP3020065B2 JP3020065B2 (en) | 2000-03-15 |
Family
ID=12634041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2042366A Expired - Fee Related JP3020065B2 (en) | 1990-02-26 | 1990-02-26 | Semiconductor manufacturing apparatus cleaning method and semiconductor manufacturing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3020065B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5730804A (en) * | 1995-12-27 | 1998-03-24 | Tokyo Electron Limited | Process gas supply apparatus |
| USRE36925E (en) * | 1993-08-11 | 2000-10-31 | Tokyo Electron Kabushiki Kaisha | Vacuum treatment apparatus and a method for manufacturing semiconductor device therein |
| JP2010529643A (en) * | 2007-04-25 | 2010-08-26 | エドワーズ・バキューム・インコーポレーテッド | In-situ removal of semiconductor process residues from dry pump surfaces |
| CN112404022A (en) * | 2020-11-20 | 2021-02-26 | 苏州镓港半导体有限公司 | Method for cleaning graphite disc for MOCVD equipment |
-
1990
- 1990-02-26 JP JP2042366A patent/JP3020065B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE36925E (en) * | 1993-08-11 | 2000-10-31 | Tokyo Electron Kabushiki Kaisha | Vacuum treatment apparatus and a method for manufacturing semiconductor device therein |
| US5730804A (en) * | 1995-12-27 | 1998-03-24 | Tokyo Electron Limited | Process gas supply apparatus |
| JP2010529643A (en) * | 2007-04-25 | 2010-08-26 | エドワーズ・バキューム・インコーポレーテッド | In-situ removal of semiconductor process residues from dry pump surfaces |
| CN112404022A (en) * | 2020-11-20 | 2021-02-26 | 苏州镓港半导体有限公司 | Method for cleaning graphite disc for MOCVD equipment |
| CN112404022B (en) * | 2020-11-20 | 2022-09-09 | 苏州镓港半导体有限公司 | Method for cleaning graphite disc for MOCVD equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3020065B2 (en) | 2000-03-15 |
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