JPH0324119A - Sealing resin composition and apparatus for sealing semiconductor - Google Patents

Abstract

PURPOSE:To obtain a sealing resin composition improved in particularly humid ity resistance after immersion in a soldering bath and soldering-heat resistance by mixing an epoxy resin with a novolac phenolic resin, a porous methyl methacrylate/butadiene/styrene copolymer resin containing a specified amino- functional disiloxane and a silica powder. CONSTITUTION:This composition essentially comprises an epoxy resin (A), a novolac phenolic resin (B), a porous methyl methacrylate/butadiene/styrene (MBS) copolymer resin (C) containing an amino-functional disiloxane of formula I (wherein R<1> is a hydrogen atom or an alkyl; and R<2> is an alkyl) and 65-85wt.%, based on the resin composition, silica powder (D). Component C is prepared by impregnating 100 pts.wt. porous MBS copolymer with about 5-100 pts.wt. amino-functional disiloxane.

Description

Detailed Description of the Invention [Object of the Invention] (Field of Application in Industry and E) The present invention provides a resin composition for sealing with excellent moisture resistance and soldering heat resistance, and a semiconductor sealant sealed with the cured product thereof. (Prior art) In recent years, in the field of conductor integrated circuits, the automation of the mounting process of semiconductor devices has been promoted at the same time as the development of cutting-edge techniques for higher integration and higher reliability. For example, when mounting a flat baggage type semiconductor device on a 2-liI3 board, conventionally soldering was performed for each lead bin, but recently the entire semiconductor device is immersed in a solder bath heated to 250°C or higher and the solder t1 is soldered. A method of injury is adopted.

(Problems to be Solved by the Invention) A semiconductor device encapsulated with a conventional resin composition consisting of an epoxy resin, a novolac type phenol resin, and silica powder has a disadvantage that moisture resistance decreases when the entire device is immersed in a solder bath. was there. In particular, when a semiconductor device that has absorbed moisture is immersed in solder, peeling occurs between the encapsulating resin ε semiconductor chip or the encapsulating resin and the lead frame, resulting in a significant deterioration of moisture resistance.As a result, disconnection due to electrode corrosion and moisture This has the disadvantage that long-term reliability cannot be guaranteed due to the leakage current caused by the leakage current.

The present invention has been made in order to eliminate the above-mentioned drawbacks, and provides an encapsulating resin composition that is less susceptible to moisture absorption and has particularly excellent moisture resistance and solder ripening resistance after being immersed in a solder bath, and a semiconductor thereof. The purpose is to provide a sealing device. [Elements of the Invention] (Means for Solving the Problems) As a result of intensive research aimed at achieving the above object, the present inventors have developed a porous methyl methacrylate-butadiene-containing amine-functional disiloxane. The present invention was completed based on the discovery that a resin composition with excellent moisture resistance and soldering heat resistance can be obtained by incorporating a styrene copolymer resin. That is, the present invention includes (A> epoxy resin, (8) novolac type phenol resin, (C) amino-functional disiloxane resin represented by the following formula. (However, in the formula, R2' is A hydrogen atom or an alkyl group, R
2 represents an alkyl group) containing a porous methyl methacrylate-■...butadiene-styrene copolymer resin and (D) silica powder as essential components, and the silica powder of (D) is added to the resin composition. A semiconductor encapsulation device characterized in that a semiconductor device is encapsulated with a encapsulation resin composition characterized by containing 65 to 85% by weight and a cured product thereof. As long as the epoxy resin used in the present invention (A) is a compound having at least two epoxy groups in its molecule, there are no particular restrictions on the molecule M structure, molecular weight, etc., and a wide range of commonly used resins are included. For example, bisphenol-type aromatics, alicyclics such as cyclohexane derivatives, and eboxinovolacs represented by the following general formula (wherein R1 is a hydrogen atom, a halogen atom, or an alkyl group, R2 is a hydrogen atom or an alkyl group,
n represents the number N greater than or equal to 1. ) These epoxy resins are
They can be used alone or in combination of two or more. The novolak phenolic resin (B) used in the present invention includes novolak phenolic resins obtained by reacting phenols such as phenol and alkylphenols with formaldehyde or paraformaldehyde, and modified resins thereof, such as eboxidized or butylated resins. Examples include novolak type phenolic resins, and there are no particular limitations as long as the resins are novolak type phenolic resins, and a wide range of examples can be included. These novolac type phenolic resins can be used alone or in combination of two or more. The porous methyl methacrylate-butadiene-styrene copolymer resin containing amino-functional disiloxane (C) used in the present invention includes porous methyl methacrylate-butadiene-styrene copolymer resin.
A butadiene-styrene copolymer resin (hereinafter referred to as MBS copolymer) impregnated with an amino-functional disiloxane represented by the following general formula is used. (However, in the formula, R1 is a hydrogen atom or an alkyl group, R2
represents an alkyl group. ) Specific compounds of amino-functional disiloxane include bis(aminoprobyl〉tetramethyldisiloxane, bis(
Examples include siloxane dimers such as methyl-reaminopropylenetetramethyldisiloxane and bis(dimethylaminopropyl)tetramethyldisiloxane. 100 parts by weight of porous MI3S copolymer is impregnated with 5 to 100 parts by weight of amino-functional disiloxane. If the amino-functional disiloxane is less than 5 parts by weight, the soldering heat resistance will be poor, and if it exceeds 100 parts by weight, the shapeability will be poor, which is not preferred. The amount is preferably 10 to 50 parts by weight. The porous MBS copolymer may be impregnated with the amino-functional disiloxane at any temperature within the range of room temperature to heated state 9 (below 150°C). The blending ratio of the porous MBS copolymer containing the amino-functional disiloxane is not particularly limited, but in consideration of economic efficiency, etc., the proportion of the porous MBS copolymer containing the amino-functional disiloxane may be 0.
It is desirable to contain 1 to 5% by weight. By blending the porous MBS copolymer containing amino-functional disiloxane, the polar group silane is preserved without bleeding while the epoxy resin is being cured with the novolac type phenolic resin, so it is compatible with the sealing resin and the semiconductor. It is thought that the adhesion of the chip and the adhesion between the sealing resin and the lead frame will be improved, and the deterioration of moisture resistance will be reduced even when immersed in a solder bath. It also has excellent adhesion to the polyimide or other bashivation film coated on the semiconductor chip. Furthermore, the low stress property is also improved compared to the simple additive type. The silica powder (D) used in the present invention may be commercially available, but it is preferably one with a low impurity concentration and an average particle size of 30 μm or less. If the average particle size exceeds 30 μm, moisture resistance and moldability will be poor, which is undesirable.
The blending ratio of silica powder is 65 to 65% to the vA fat composition.
The content is preferably 85% by weight. When the proportion is less than 65% by weight, the resin composition has high hygroscopicity and has poor moisture resistance after immersion in a solder bath, and when it exceeds 85% by weight, fluidity is extremely poor and moldability is unfavorable.
The sealing resin composition of the present invention essentially contains an epoxy resin, a novolac type phenolic resin, a porous MBS copolymer containing an amino-functional disiloxane, and a silica powder. As long as it does not conflict, as necessary, for example, natural waxes, synthetic waxes, metal salts of straight chain fatty acids, acid amides, esters, mold release agents such as paraffins, flame retardants such as antimony trioxide, carbon black. Coloring agents such as, silane coupling agents, various curing accelerators, etc. can be added and blended as appropriate. A general method for producing the sealing resin composition of the present invention as a molding material is to impregnate a porous MBS copolymer with an amino-functional disiloxane in a mixer and leave it to stand. Next, epoxy resin, novolac type phenol resin, silica powder, and other ingredients are blended with this and mixed sufficiently uniformly with a mixer, etc., and then melt-mixed with hot rolls or mixed with a seconder. Let it cool and solidify, then crush it to an appropriate size and use it as a preform material. Here, the porous M
Although we have explained the method of impregnating the BS copolymer with amino-functional disiloxane and then adding other components, it is also possible to impregnate the porous MBSJt;ffi composite in advance.
Each component may be mixed together in a mixer. The molded material thus obtained is used for sealing electronic or electrical parts such as semiconductor devices, and is applied to coatings, insulation, etc., and has excellent properties and reliability.
1 is T.

The fast conductor sealing device of the present invention can be easily produced by sealing a semiconductor device using Tamaki's sealing resin composition scoop.
6 General method of sealing)
For this, there is a low-pressure transfer molding method, but it is also possible to seal with an ink or comb, a compression seal, and a seal. The VA resin composition for sealing is heated and cured during sealing, and finally the cured product of the composition is used for sealing.
1. Semiconductor sealing device is obtained. Curing temperature is 150℃ or higher1. It is preferable to heat it up. The semiconductor components to be sealed 4141 are, for example, integrated circuits, .
Examples include large-scale T & product circuits, I transistors, Zyristors, diodes, etc., and are not particularly limited. For example, it cannot be limited to the following.

Practical Example Table 1 (The raw materials shown in this table are mixed at room temperature, further kneaded at 90-95°C, and then crushed in cold RII L and then ground.
Produce ζ molding material, ゛X℃.

Comparative example 1-2 Table 1! 8: A molding material was produced using the raw material shown in Example ε Dogetsu 6J1.

Using the molding materials produced in Examples and Comparative Examples 1 and 2, a semiconductor device was sealed and cured by heating at 170° C. to encapsulate the semiconductor. Various tests were conducted on this molding material and semiconductor mounting material, and the results are shown in Table 1.The present invention has a low water absorption rate and excellent moisture resistance. The effect was recognized.

In each of the Examples and Comparative Examples, a test jaw was conducted: water absorption wheel;
Glass transition temperature and moisture resistance after full immersion were tested as follows.

The water absorption rate was determined by molding I-Transfer using a molding material and using TM. Shuttle 50ltllii. A crystal with a thickness of 3 mm was prepared, and the stiffness was placed in saturated steam at 127°C and 2.5 atm.
After leaving it for 4 hours, the increase in the amount of sealing was determined by 1. Glass transition temperature (water absorption test) The same molded product was made and post-cured at 175°C for 8 hours, used as a suitably quiet test bead, and measured using a thermomechanical property analyzer. . Moisture resistance was determined by bonding a silicone chip (chip for Tes I) with two or more aluminum wires to a regular 42 alloy frame using a high-quality material, and heating it at 175℃ for 2 hours.
Transfer and mold for 5x 10x 1.5 minutes
Manufactures ve flat baggage semiconductor sealing equipment}7
After curing was carried out at 175°C for 8 hours. This semiconductor encapsulation device was subjected to moisture absorption treatment for 100 hours at 40° C. and 90% RH before being immersed in a solder bath at 250° C. for 10 seconds. Next, a glacier cooker test (PCT) was conducted in saturated steam at 127° C. and 2.5 atm, and disconnection due to corrosion of the aluminum wiring was evaluated as defective.

Table 1 *1 Nibis (aminobrodine) tetramethynoresi Table 1 (continued) (Units) As a result, reliability can be guaranteed over a long period of time. [Effect of the invention]

Claims (1)

[Scope of Claims] 1 (A) Epoxy resin, (B) Novolac type phenolic resin, (C) Amino-functional disiloxane represented by the following formula ▲ There are numerical formulas, chemical formulas, tables, etc. ▼ (However, in the formula, R^1 is a hydrogen atom or an alkyl group, R
A porous methyl methacrylate-butadiene-styrene copolymer resin containing (^2 represents an alkyl group) and (D) silica powder are essential components, and the silica powder of (D) is 65 to 85% of the resin composition. % by weight of a sealing resin composition. 2 (A) Epoxy resin, (B) Novolac type phenolic resin, (C) Amino-functional disiloxane represented by the following formula ▲ Numerical formulas, chemical formulas, tables, etc. are available ▼ (However, in the formula, R^1 is a hydrogen atom or an alkyl group, R
A porous methyl methacrylate-butadiene-styrene copolymer resin containing (^2 represents an alkyl group) and (D) silica powder are essential components, and the silica powder (D) is added in an amount of 65 to 85% by weight based on the resin composition. 1. A semiconductor encapsulation device characterized in that a semiconductor device is encapsulated with a cured product of a encapsulation resin composition containing %.