JPH03224246A - Probe device - Google Patents

Probe device

Info

Publication number
JPH03224246A
JPH03224246A JP2018030A JP1803090A JPH03224246A JP H03224246 A JPH03224246 A JP H03224246A JP 2018030 A JP2018030 A JP 2018030A JP 1803090 A JP1803090 A JP 1803090A JP H03224246 A JPH03224246 A JP H03224246A
Authority
JP
Japan
Prior art keywords
probe
pin
wafer
contact
needle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018030A
Other languages
Japanese (ja)
Inventor
Takuo Uchida
内田 拓男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2018030A priority Critical patent/JPH03224246A/en
Publication of JPH03224246A publication Critical patent/JPH03224246A/en
Pending legal-status Critical Current

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  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE:To prevent imperfect contact between a probe pin and an object to be measured by overdrive, by receiving the pin pressure applied to a probe pin by using a rigid member. CONSTITUTION:A probe pin 15 is brought into contact with an electrode pad of a semiconductor wafer; the chuck top of the wafer is further made to ascend, and overdrive is applied; the pin 15 between a fixed plate 16 and guide plates 19, 20 is buckled and deformed so that a specified pin pressure is applied to the wafer; and thus the electrical contact between the pin and the wafer can excellently be maintained, and measurement of high precision is realized. Since the pressure of the pin 15 is received by a reinforced body 13 and a reinforced ring 2 of high rigidity installed at the lower part of the substrate 12a, the deflection of a probe card can extremely be reduced, and the imperfect contact between the pin 15 and an object to be measured is not generated.

Description

【発明の詳細な説明】 発明の目的 (産業上の利用分野) 本発明は、プローブ装置に関するものである。[Detailed description of the invention] purpose of invention (Industrial application field) The present invention relates to a probe device.

(従来の技術) 半導体素子の製造工程において、半導体ウェハに形成さ
れた多数のチップを測定するには、第4図に示したよう
に、プローブ針1の固定端部をプリント基板2の導体パ
ターンに半田付けし、遊端部を半導体ウェハに電気的に
接触させるプローブカード3がある。上記プローブ針1
を半導体ウェハ4の各チップの電極パッド列に接触させ
ることにより各チップ毎に各種の電気的特性をテスタで
測定するようにしている。
(Prior Art) In the manufacturing process of semiconductor devices, in order to measure a large number of chips formed on a semiconductor wafer, as shown in FIG. There is a probe card 3 which is soldered to the semiconductor wafer and whose free end is electrically contacted with the semiconductor wafer. Above probe needle 1
By contacting the electrode pad array of each chip of the semiconductor wafer 4, various electrical characteristics of each chip are measured with a tester.

この測定方法は、プローブ針が被測定物例えば半導体ウ
ェハの各チップの電極パッド列に接触した後に半導体ウ
ェハを更に上昇させ、一定量の上昇ストロークでオーバ
ードライブを与えてプローブ針の針圧によりプローブ針
を半導体ウェハに確実に接触させて接触不良が起きない
ように講じている。
In this measurement method, after the probe needle contacts the electrode pad array of each chip of the object to be measured, such as a semiconductor wafer, the semiconductor wafer is further raised, an overdrive is applied with a certain amount of upward stroke, and the needle pressure of the probe needle is applied to the probe. Measures are taken to ensure that the needle contacts the semiconductor wafer to avoid contact failure.

(発明が解決しようとする課題) 然し乍ら、上記の技術によると、次のような問題が存在
していた。
(Problems to be Solved by the Invention) However, according to the above technology, the following problems existed.

即ち、オーバドライブをかけても接触不良が多い欠点が
あった。
That is, even if overdrive is applied, there is a drawback that there are many contact failures.

この点において本発明者等は検討した結果、例えば、上
記したオーバードライブ量(0,0)を50μmかける
と、プリント基板2のたわみ量が30μmに達する場合
がある。この場合、実質的なオーバードライブ量は20
μm程度であり、プローブ針1の針圧を2gfと設定し
ても、実際の針圧は、 0.8gfとなり、実際の針圧
は、設定針圧よりも低いために、プローブ針1は接触不
良を生じて測定精度の低い結果しか得られないことが判
った。
As a result of studies conducted by the present inventors in this regard, for example, when the above-mentioned overdrive amount (0,0) is multiplied by 50 μm, the amount of deflection of the printed circuit board 2 may reach 30 μm. In this case, the actual overdrive amount is 20
Even if the stylus pressure of the probe needle 1 is set to 2gf, the actual stylus pressure will be 0.8gf, and since the actual stylus pressure is lower than the set stylus pressure, the probe needle 1 will not make contact. It was found that defects occurred and only results with low measurement accuracy were obtained.

本発明は、上記の実情に鑑みて開発したもので、オーバ
ドライブをかけても接触不良が発生することのないよう
に構成したプローブ装置の提供を目的としたものである
The present invention was developed in view of the above-mentioned circumstances, and an object of the present invention is to provide a probe device configured such that contact failure does not occur even when overdrive is applied.

1尻■豊或 (課題を解決するための手段) 上記の目的を達成するため、本発明は、プローブ針を被
測定物に接触させて電気的特性を測定するプローブ装置
であって、プローブ針の受ける針圧を剛性部材で受ける
ようにしたプローブ装置である。
(Means for Solving the Problems) In order to achieve the above object, the present invention provides a probe device for measuring electrical characteristics by bringing a probe needle into contact with an object to be measured. This is a probe device in which a rigid member receives the needle pressure received by the probe.

また、剛性部材の構造は、基板の下部に設けた剛性の高
い金属性補強体とこの補強体を剛性の高い補強リングを
介して装置本体の一部に固定するようにするのが好まし
い。
Further, the structure of the rigid member is preferably such that a highly rigid metallic reinforcing body is provided at the lower part of the substrate and this reinforcing body is fixed to a part of the device main body via a highly rigid reinforcing ring.

(作 用) 従って、本発明によると、被測定物の測定時に、プロー
ブカードのプローブ針を被測定物に対して所定の力で押
し付けて針圧を与えて、プローブ針と被測定物の電極パ
ッドとの電気的接触を良好に保持させて高精度の測定結
果を得るようにしている。この場合、プローブ針の針圧
を基板の下部に設けた剛性の高い補強体とこの補強体に
設けた補強リングで受けるようにしたので、針圧は基板
等に影響を与えることが極めて少ないため、針圧による
プローブカードのたわみ量を極力小さくすることができ
、プローブ針と被測定物との接触不良を起こすことがな
い。
(Function) Therefore, according to the present invention, when measuring an object to be measured, the probe needle of the probe card is pressed against the object to be measured with a predetermined force to apply needle pressure, and the electrodes of the probe needle and the object to be measured are Good electrical contact with the pad is maintained to obtain highly accurate measurement results. In this case, the stylus pressure of the probe needle is received by the highly rigid reinforcing body provided at the bottom of the board and the reinforcing ring provided on this reinforcing body, so the stylus pressure has very little effect on the board etc. The amount of deflection of the probe card due to needle pressure can be minimized, and poor contact between the probe needle and the object to be measured will not occur.

(実施例) 本発明をウエハプローバに適用した一実施例を図面に従
って説明する。
(Example) An example in which the present invention is applied to a wafer prober will be described with reference to the drawings.

上記ウエハプローバは、既に周知なので、全体の説明を
省略し、ウェハプローブの主要部から説明する。第1図
において、プローブカードを取付けるためのリングイン
サート10にソケットリング11を取付リングを介して
設け、このソケットリング11にプリント基板12bを
取付け、このプリント基板12bとプリント基板12a
を配線25により電気的に接続する。上記プリント基板
12aの下部に第2図に示すごとく剛性の高い例えばア
ルミニウム等の金属性補強体(上部ブロック)13を固
定ネジ13a等で固着する。ここで。
Since the above-mentioned wafer prober is already well known, the entire explanation will be omitted and the main parts of the wafer probe will be explained first. In FIG. 1, a socket ring 11 is provided through a mounting ring on a ring insert 10 for mounting a probe card, a printed circuit board 12b is mounted on this socket ring 11, and this printed circuit board 12b and printed circuit board 12a are connected to each other.
are electrically connected by wiring 25. As shown in FIG. 2, a highly rigid metal reinforcing body (upper block) 13 made of aluminum or the like is fixed to the lower part of the printed circuit board 12a using fixing screws 13a or the like. here.

上記補強体13はドーナツ形状を呈し、プリント基板1
2bと対向した基準面を有している。この補強体13の
中央部に充填したエポキシ樹脂等の接着剤14と固定板
16により多数本のプローブ針15をZ方向に位置決め
されて固着され、更に、補強体13の下部に中間ブロッ
ク17と下部ブロック18とが固定ネジ17a、18a
を介して固着され、中間ブロック17と下部ブロック1
8には、上部案内板19と下部案内板2oとを設けてプ
ローブ針15を上下に案内してXYに位置決めされるよ
うにしている。また、位置決めピン21は、補強体13
、中間ブロック17及び下部ブロック18に挿通させて
各ブロックのXYの相対位置を規制するようにしている
The reinforcing body 13 has a donut shape, and the reinforcing body 13 has a donut shape.
It has a reference surface facing 2b. A large number of probe needles 15 are positioned and fixed in the Z direction by an adhesive 14 such as an epoxy resin filled in the center of the reinforcing body 13 and a fixing plate 16. Furthermore, an intermediate block 17 is attached to the lower part of the reinforcing body 13. Lower block 18 and fixing screws 17a, 18a
are fixed through the middle block 17 and the lower block 1.
8 is provided with an upper guide plate 19 and a lower guide plate 2o to guide the probe needle 15 up and down so that it is positioned in XY. Further, the positioning pin 21 is connected to the reinforcing body 13.
, the intermediate block 17 and the lower block 18 to regulate the relative XY positions of each block.

上記した全導性補強体13の下面外周に剛性の高いアル
ミニュウム製等の補強リング22の内周面を固定ネジを
介して固着し、補強リング22の外周面を装置本体10
のプローブカードを取付けるための開口部下面に固定ネ
ジにより固着している。
The inner circumferential surface of a reinforcing ring 22 made of highly rigid aluminum or the like is fixed to the outer circumference of the lower surface of the above-mentioned fully conductive reinforcing body 13 via a fixing screw, and the outer circumferential surface of the reinforcing ring 22 is fixed to the outer circumference of the lower surface of the fully conductive reinforcing body 13.
It is fixed with a fixing screw to the bottom of the opening for attaching the probe card.

次に、上記実施例の作用を説明する。Next, the operation of the above embodiment will be explained.

第3図(a)に示すように、被測定物である半導体ウェ
ハ23の電極パッドにプローブ針15を接触させて電気
的特性を測定する場合、チャックトップ24を上昇させ
てウェハ23をプローブ針15に接触させ1次いで、同
図(b)に示すようにチャックトップ24更に例えば7
0μm上向きのストロークでオーバドライブを加えると
、固定板16と案内板19.20の間のプローブ針15
に長さ方向の力が加わり、針15は、座屈して変形する
ので、プローブ針15は半導体ウェハ23に対して所定
の力で押し付けられて針圧が与えられ、プローブ針15
とウェハ23の電極パッドとの電気的接触を良好に保持
させて高精度の測定結果を得ることができる。この場合
、プローブ針15の針圧を基板12aの下部に設けた剛
性の高い補強体13とこの補強体13に設けた補強リン
グ22で受けるようにしたので、針圧は基板12a等に
影響を与えることが極めて少ないため、針圧によるプロ
ーブカードのたわみ量を極力小さくすることができ、プ
ひ−ブ針15と被測定物との接触不良を起こすことがな
い。
As shown in FIG. 3(a), when measuring electrical characteristics by bringing the probe needles 15 into contact with the electrode pads of the semiconductor wafer 23, which is the object to be measured, the chuck top 24 is raised and the wafer 23 is brought into contact with the probe needles. 15, and then, as shown in FIG.
When overdrive is applied with an upward stroke of 0 μm, the probe needle 15 between the fixed plate 16 and the guide plate 19.20
A force in the longitudinal direction is applied to the needle 15 and the needle 15 is buckled and deformed. Therefore, the probe needle 15 is pressed against the semiconductor wafer 23 with a predetermined force and pressure is applied to the probe needle 15.
It is possible to maintain good electrical contact between the electrode pads of the wafer 23 and the electrode pads of the wafer 23, and obtain highly accurate measurement results. In this case, since the stylus pressure of the probe needle 15 is received by the highly rigid reinforcing body 13 provided at the bottom of the substrate 12a and the reinforcing ring 22 provided on this reinforcing body 13, the stylus pressure does not affect the substrate 12a etc. Since the amount of force applied is extremely small, the amount of deflection of the probe card due to needle pressure can be minimized, and poor contact between the probe needle 15 and the object to be measured will not occur.

本例において、例えば70μm上向きのストロークで半
導体ウェハ23を上昇させてプローブ針15ににオーバ
ドライブを加えると、従来の構造のプリント基板には4
0μI11〜45μm程度のたわみ量が生じるが、本例
に依れば、剛性の高い補強体13とこの補強体13に設
けた補強リング22により針圧を受けるので、プリント
基板12は、5μ道のたわみ量を受けるのみであって、
プリント基板12のたわみ量を極力小さくできることが
確認された。
In this example, if the semiconductor wafer 23 is raised with an upward stroke of 70 μm and an overdrive is applied to the probe needle 15, the printed circuit board with the conventional structure is
Although a deflection amount of about 0 μI11 to 45 μm occurs, according to this example, since the printed circuit board 12 receives stylus pressure by the highly rigid reinforcing body 13 and the reinforcing ring 22 provided on this reinforcing body 13, the printed circuit board 12 is deflected by about 5 μm. It only receives the amount of deflection,
It has been confirmed that the amount of deflection of the printed circuit board 12 can be minimized.

プローブ針の針圧を基板の下部に設けた剛性の高い補強
体とこの補強体に設けた補強リングで受けるようにした
ので、針圧は基板等に影響を与えることが極めて少なく
、針圧によるプローブカードのたわみ量を極力小さくす
ることができるため、プローブ針と被測定物とは確実に
接触し精度の極めて高い測定結果を得ることができる 見匪勿免來 以上のことから明らかなように、本発明によると次のよ
うな優れた効果がある。
Since the stylus pressure of the probe needle is received by a highly rigid reinforcing body provided at the bottom of the board and a reinforcing ring provided on this reinforcing body, the stylus pressure has very little effect on the board etc., and the stylus pressure is Since the amount of deflection of the probe card can be minimized, the probe needle and the object to be measured can reliably come into contact and extremely accurate measurement results can be obtained.As is clear from the above, According to the present invention, there are the following excellent effects.

従来プローブ針と測定端の接触不良を検知できず、IC
の歩留まりを悪くしていたが、本発明のプローブ装置に
よりICの歩留まりが60%から90%に向上した。
Conventionally, poor contact between the probe needle and the measuring end could not be detected, and the IC
However, the probe device of the present invention has improved the IC yield from 60% to 90%.

【図面の簡単な説明】[Brief explanation of drawings]

図面は本発明におけるプローブ装置の一実施例を示した
もので、第1図はプローブ装置の垂直釘型プローブカー
ドの装着位置を示した部分断面図、第2図は同上の一部
拡大断面図、第3図(a)、(b)は同上のプローブ針
にオーバードライブをかけた状態を示す断面説明図であ
り、第4図は従来のプローブカードを示した断面図であ
る。 10 ・ ・ 12a 、 13 ・ ・ 15 ・ ・ 22 ・ ・ 23 ・ ・ ・リン−ゲインサート 12b・・・プリント基板 ・補強体 ・プローブ針 ・補強リング ・半導体ウェハ 特 許 出 願 人 東京エレクトロン株式会社第 図 (α] (わ) 第 図
The drawings show an embodiment of the probe device according to the present invention, and FIG. 1 is a partial cross-sectional view showing the mounting position of the vertical nail type probe card of the probe device, and FIG. 2 is a partially enlarged cross-sectional view of the same. , FIGS. 3(a) and 3(b) are explanatory cross-sectional views showing a state in which the probe needle of the above is overdriven, and FIG. 4 is a cross-sectional view showing a conventional probe card. 10 ・ ・ 12a, 13 ・ ・ 15 ・ ・ 22 ・ ・ 23 ・ ・ Phosphorus gain insert 12b...Printed circuit board, reinforcing body, probe needle, reinforcing ring, semiconductor wafer Patent Applicant: Tokyo Electron Ltd. No. Figure (α) (wa) Figure

Claims (2)

【特許請求の範囲】[Claims] (1)プローブ針を被測定物に接触させて電気的特性を
測定するプローブ装置において、プローブ針の受ける針
圧を剛性部材で受けるようにしたことを特徴とするプロ
ーブ装置。
(1) A probe device for measuring electrical characteristics by bringing a probe needle into contact with an object to be measured, characterized in that the pressure exerted by the probe needle is received by a rigid member.
(2)上記した剛性部材の構造は、基板の下部に設けた
剛性の高い金属性補強体とこの補強体を剛性の高い補強
リングを介して装置本体の一部に設けるようにした請求
項1記載のプローブ装置。
(2) The structure of the above-mentioned rigid member is such that a highly rigid metal reinforcing body is provided at the lower part of the substrate and this reinforcing body is provided in a part of the device main body via a highly rigid reinforcing ring. The probe device described.
JP2018030A 1990-01-30 1990-01-30 Probe device Pending JPH03224246A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2018030A JPH03224246A (en) 1990-01-30 1990-01-30 Probe device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018030A JPH03224246A (en) 1990-01-30 1990-01-30 Probe device

Publications (1)

Publication Number Publication Date
JPH03224246A true JPH03224246A (en) 1991-10-03

Family

ID=11960271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018030A Pending JPH03224246A (en) 1990-01-30 1990-01-30 Probe device

Country Status (1)

Country Link
JP (1) JPH03224246A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5325052A (en) * 1990-11-30 1994-06-28 Tokyo Electron Yamanashi Limited Probe apparatus
JPH06273445A (en) * 1993-03-18 1994-09-30 Tokyo Electron Ltd Probe device
JPH07221143A (en) * 1995-02-20 1995-08-18 Tokyo Electron Ltd Probing device
JPH07221144A (en) * 1995-02-20 1995-08-18 Tokyo Electron Ltd Probing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5325052A (en) * 1990-11-30 1994-06-28 Tokyo Electron Yamanashi Limited Probe apparatus
JPH06273445A (en) * 1993-03-18 1994-09-30 Tokyo Electron Ltd Probe device
US5517126A (en) * 1993-03-18 1996-05-14 Tokyo Electron Limited Probe apparatus
JPH07221143A (en) * 1995-02-20 1995-08-18 Tokyo Electron Ltd Probing device
JPH07221144A (en) * 1995-02-20 1995-08-18 Tokyo Electron Ltd Probing device

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