JPH0322065B2 - - Google Patents

Info

Publication number
JPH0322065B2
JPH0322065B2 JP56195087A JP19508781A JPH0322065B2 JP H0322065 B2 JPH0322065 B2 JP H0322065B2 JP 56195087 A JP56195087 A JP 56195087A JP 19508781 A JP19508781 A JP 19508781A JP H0322065 B2 JPH0322065 B2 JP H0322065B2
Authority
JP
Japan
Prior art keywords
stress
resistance
region
semiconductor
temperature coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56195087A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57128075A (en
Inventor
Eru Jonson Ratsuseru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of JPS57128075A publication Critical patent/JPS57128075A/ja
Publication of JPH0322065B2 publication Critical patent/JPH0322065B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/20Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2268Arrangements for correcting or for compensating unwanted effects
    • G01L1/2281Arrangements for correcting or for compensating unwanted effects for temperature variations
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G01L9/065Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
JP56195087A 1980-12-03 1981-12-03 Detector Granted JPS57128075A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/212,657 US4345477A (en) 1980-12-03 1980-12-03 Semiconduction stress sensing apparatus

Publications (2)

Publication Number Publication Date
JPS57128075A JPS57128075A (en) 1982-08-09
JPH0322065B2 true JPH0322065B2 (enExample) 1991-03-26

Family

ID=22791941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56195087A Granted JPS57128075A (en) 1980-12-03 1981-12-03 Detector

Country Status (5)

Country Link
US (1) US4345477A (enExample)
EP (1) EP0053486B1 (enExample)
JP (1) JPS57128075A (enExample)
CA (1) CA1176744A (enExample)
DE (1) DE3176738D1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020059246A1 (ja) * 2018-09-21 2020-03-26 パナソニックIpマネジメント株式会社 センサ処理回路及びセンサシステム

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US4444056A (en) * 1982-05-05 1984-04-24 Itt Corporation Temperature compensated circuit
FR2535458B1 (fr) * 1982-10-29 1985-06-14 Flopetrol Etu Fabrications Capteur de pression et de temperature
JPS59184819A (ja) * 1983-04-06 1984-10-20 Hitachi Ltd 半導体圧力センサ
JPS59217374A (ja) * 1983-05-26 1984-12-07 Toyota Central Res & Dev Lab Inc 半導体ひずみ変換器
JPS60128673A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体感圧装置
JPS6170431A (ja) * 1984-09-14 1986-04-11 Nippon Cement Co Ltd 圧力センサ−
FR2594546B1 (fr) * 1986-02-19 1988-09-23 Flopetrol Dispositif de mesure de la temperature du diaphragme d'un capteur de pression
DE3772514D1 (de) * 1986-10-28 1991-10-02 Sumitomo Electric Industries Messverfahren fuer einen halbleiter-druckmessfuehler.
JPH07113647B2 (ja) * 1988-09-02 1995-12-06 日産自動車株式会社 半導体加速度センサ
US5184520A (en) * 1989-10-18 1993-02-09 Ishida Scales Mfg. Co., Ltd. Load sensor
US5187985A (en) * 1991-09-19 1993-02-23 Honeywell Inc. Amplified pressure transducer
JP4236402B2 (ja) * 2001-10-09 2009-03-11 富士通マイクロエレクトロニクス株式会社 半導体装置
US6870236B2 (en) * 2003-05-20 2005-03-22 Honeywell International, Inc. Integrated resistor network for multi-functional use in constant current or constant voltage operation of a pressure sensor
US6718830B1 (en) 2003-05-20 2004-04-13 Honeywell International, Inc. Customized span compensation of SOI pressure sensor
DE10331096B4 (de) * 2003-07-09 2014-02-13 Austriamicrosystems Ag Integrierte Halbleiteranordnung und Verfahren
US7132838B2 (en) * 2004-03-11 2006-11-07 Tao Of Systems Integration, Inc. Active sensor circuit with one or more T-network pairs
US7168974B2 (en) * 2004-04-08 2007-01-30 Leviton Manufacturing Co., Inc. Three phase lighted plugs and connectors for indicating the absence of at least one phase
US7714591B2 (en) * 2005-12-20 2010-05-11 Kulite Semiconductor Products, Inc. Apparatus and methods for linearizing piezoresistive wheatstone bridges
US8687981B2 (en) * 2007-10-02 2014-04-01 Luxtera, Inc. Method and system for split voltage domain transmitter circuits
US8940598B2 (en) * 2010-11-03 2015-01-27 Texas Instruments Incorporated Low temperature coefficient resistor in CMOS flow
US9157822B2 (en) * 2011-02-01 2015-10-13 Kulite Semiconductor Products, Inc. Electronic interface for LVDT-type pressure transducers using piezoresistive sensors
KR101691278B1 (ko) 2012-05-03 2017-01-09 애플 인크. 휨 빔에 의해 지지되는 플랫폼 상의 하중 측정을 위한 모멘트 보상형 휨 빔 센서
JP2014089087A (ja) * 2012-10-30 2014-05-15 Yamaha Corp オフセットキャンセル回路
US9983715B2 (en) 2012-12-17 2018-05-29 Apple Inc. Force detection in touch devices using piezoelectric sensors
US9952703B2 (en) 2013-03-15 2018-04-24 Apple Inc. Force sensing of inputs through strain analysis
EP2784521B1 (en) 2013-03-28 2019-04-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Sensor apparatus and method
CN110134283B (zh) 2013-10-28 2022-10-11 苹果公司 基于压电的力感测
AU2015100011B4 (en) 2014-01-13 2015-07-16 Apple Inc. Temperature compensating transparent force sensor
US9612170B2 (en) 2015-07-21 2017-04-04 Apple Inc. Transparent strain sensors in an electronic device
US10055048B2 (en) 2015-07-31 2018-08-21 Apple Inc. Noise adaptive force touch
US9874965B2 (en) 2015-09-11 2018-01-23 Apple Inc. Transparent strain sensors in an electronic device
US9886118B2 (en) 2015-09-30 2018-02-06 Apple Inc. Transparent force sensitive structures in an electronic device
US10006820B2 (en) * 2016-03-08 2018-06-26 Apple Inc. Magnetic interference avoidance in resistive sensors
US10107873B2 (en) * 2016-03-10 2018-10-23 Allegro Microsystems, Llc Electronic circuit for compensating a sensitivity drift of a hall effect element due to stress
US10209830B2 (en) 2016-03-31 2019-02-19 Apple Inc. Electronic device having direction-dependent strain elements
US10365322B2 (en) 2016-04-19 2019-07-30 Analog Devices Global Wear-out monitor device
US10162017B2 (en) 2016-07-12 2018-12-25 Allegro Microsystems, Llc Systems and methods for reducing high order hall plate sensitivity temperature coefficients
US10133418B2 (en) 2016-09-07 2018-11-20 Apple Inc. Force sensing in an electronic device using a single layer of strain-sensitive structures
US10458828B2 (en) * 2017-02-07 2019-10-29 Honeywell International Inc. Flow sensor heater circuit calibration
US10444091B2 (en) 2017-04-11 2019-10-15 Apple Inc. Row column architecture for strain sensing
US11024525B2 (en) 2017-06-12 2021-06-01 Analog Devices International Unlimited Company Diffusion temperature shock monitor
US10309846B2 (en) 2017-07-24 2019-06-04 Apple Inc. Magnetic field cancellation for strain sensors
US10520559B2 (en) 2017-08-14 2019-12-31 Allegro Microsystems, Llc Arrangements for Hall effect elements and vertical epi resistors upon a substrate
US20200018662A1 (en) * 2018-07-11 2020-01-16 King Fahd University Of Petroleum And Minerals Pipeline leak detection
US10782818B2 (en) 2018-08-29 2020-09-22 Apple Inc. Load cell array for detection of force input to an electronic device enclosure
WO2020046493A1 (en) 2018-08-29 2020-03-05 Leviton Manufacturing Co., Inc. Pin and sleeve device with indication
US11682889B2 (en) 2019-01-07 2023-06-20 Leviton Manufacturing Co., Inc. Electrical device with built-in sensors and/or communications
US11012037B2 (en) 2019-03-22 2021-05-18 Analog Devices International Unlimited Company Techniques for controlling an auto-zero amplifier
US10833639B2 (en) * 2019-04-12 2020-11-10 Analog Devices International Unlimited Company Method for aliasing reduction in auto zero amplifier
US20230216449A1 (en) * 2022-01-03 2023-07-06 Skyworks Solutions, Inc. Methods for generating a constant current
CN115096348B (zh) * 2022-08-26 2022-11-22 成都晨电智能科技有限公司 一种全桥温漂补偿电路、方法及应变传感系统

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US3161045A (en) * 1961-08-18 1964-12-15 Fairchild Camera Instr Co Strain gauge compensation
US3161821A (en) * 1962-07-02 1964-12-15 Statham Instrument Inc Wheatstone bridge transducer circuits with external balancing means
US3629719A (en) * 1969-08-22 1971-12-21 Bulova Watch Co Inc Differential amplifying system
US3646815A (en) * 1970-03-26 1972-03-07 Bailey Meter Co Silicon pressure transducer circuit
GB1414144A (en) * 1972-03-20 1975-11-19 Welwyn Electric Ltd Strain measuring device
US3893228A (en) * 1972-10-02 1975-07-08 Motorola Inc Silicon pressure sensor
US3886799A (en) * 1973-09-24 1975-06-03 Nat Semiconductor Corp Semiconductor pressure transducer employing temperature compensation circuits and novel heater circuitry
US3836796A (en) * 1973-09-24 1974-09-17 Nat Semiconductor Corp Semiconductor pressure transducer employing novel temperature compensation means
US3841150A (en) * 1973-11-02 1974-10-15 Honeywell Inc Strain gauge transducer signal conditioning circuitry
US3956927A (en) * 1975-09-29 1976-05-18 Honeywell Inc. Strain gauge transducer apparatus
US4035823A (en) * 1975-10-06 1977-07-12 Honeywell Inc. Stress sensor apparatus
US4125820A (en) * 1975-10-06 1978-11-14 Honeywell Inc. Stress sensor apparatus
JPS52106054U (enExample) * 1976-02-09 1977-08-12
JPS581548B2 (ja) * 1977-03-17 1983-01-11 株式会社横河電機製作所 薄膜ストレンゲ−ジ変換器
US4202218A (en) * 1977-09-28 1980-05-13 International Telephone And Telegraph Corporation Bridge circuit
US4205556A (en) * 1979-02-12 1980-06-03 Rockwell International Corporation Circuitry for strain sensitive apparatus
JPS55113904A (en) * 1979-02-26 1980-09-02 Hitachi Ltd Method of zero point temperature compensation for strain-electric signal transducer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020059246A1 (ja) * 2018-09-21 2020-03-26 パナソニックIpマネジメント株式会社 センサ処理回路及びセンサシステム

Also Published As

Publication number Publication date
EP0053486B1 (en) 1988-05-11
US4345477A (en) 1982-08-24
DE3176738D1 (en) 1988-06-16
JPS57128075A (en) 1982-08-09
EP0053486A3 (en) 1984-05-30
EP0053486A2 (en) 1982-06-09
CA1176744A (en) 1984-10-23

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