CA1176744A - Semiconductor stress sensing apparatus - Google Patents
Semiconductor stress sensing apparatusInfo
- Publication number
- CA1176744A CA1176744A CA000389753A CA389753A CA1176744A CA 1176744 A CA1176744 A CA 1176744A CA 000389753 A CA000389753 A CA 000389753A CA 389753 A CA389753 A CA 389753A CA 1176744 A CA1176744 A CA 1176744A
- Authority
- CA
- Canada
- Prior art keywords
- domain
- region
- terminating
- semiconductor
- resistive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2268—Arrangements for correcting or for compensating unwanted effects
- G01L1/2281—Arrangements for correcting or for compensating unwanted effects for temperature variations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
- G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/212,657 US4345477A (en) | 1980-12-03 | 1980-12-03 | Semiconduction stress sensing apparatus |
| US212,657 | 1980-12-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1176744A true CA1176744A (en) | 1984-10-23 |
Family
ID=22791941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000389753A Expired CA1176744A (en) | 1980-12-03 | 1981-11-09 | Semiconductor stress sensing apparatus |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4345477A (enExample) |
| EP (1) | EP0053486B1 (enExample) |
| JP (1) | JPS57128075A (enExample) |
| CA (1) | CA1176744A (enExample) |
| DE (1) | DE3176738D1 (enExample) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4444056A (en) * | 1982-05-05 | 1984-04-24 | Itt Corporation | Temperature compensated circuit |
| FR2535458B1 (fr) * | 1982-10-29 | 1985-06-14 | Flopetrol Etu Fabrications | Capteur de pression et de temperature |
| JPS59184819A (ja) * | 1983-04-06 | 1984-10-20 | Hitachi Ltd | 半導体圧力センサ |
| JPS59217374A (ja) * | 1983-05-26 | 1984-12-07 | Toyota Central Res & Dev Lab Inc | 半導体ひずみ変換器 |
| JPS60128673A (ja) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | 半導体感圧装置 |
| JPS6170431A (ja) * | 1984-09-14 | 1986-04-11 | Nippon Cement Co Ltd | 圧力センサ− |
| FR2594546B1 (fr) * | 1986-02-19 | 1988-09-23 | Flopetrol | Dispositif de mesure de la temperature du diaphragme d'un capteur de pression |
| DE3772514D1 (de) * | 1986-10-28 | 1991-10-02 | Sumitomo Electric Industries | Messverfahren fuer einen halbleiter-druckmessfuehler. |
| JPH07113647B2 (ja) * | 1988-09-02 | 1995-12-06 | 日産自動車株式会社 | 半導体加速度センサ |
| US5184520A (en) * | 1989-10-18 | 1993-02-09 | Ishida Scales Mfg. Co., Ltd. | Load sensor |
| US5187985A (en) * | 1991-09-19 | 1993-02-23 | Honeywell Inc. | Amplified pressure transducer |
| JP4236402B2 (ja) * | 2001-10-09 | 2009-03-11 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
| US6870236B2 (en) * | 2003-05-20 | 2005-03-22 | Honeywell International, Inc. | Integrated resistor network for multi-functional use in constant current or constant voltage operation of a pressure sensor |
| US6718830B1 (en) | 2003-05-20 | 2004-04-13 | Honeywell International, Inc. | Customized span compensation of SOI pressure sensor |
| DE10331096B4 (de) * | 2003-07-09 | 2014-02-13 | Austriamicrosystems Ag | Integrierte Halbleiteranordnung und Verfahren |
| US7132838B2 (en) * | 2004-03-11 | 2006-11-07 | Tao Of Systems Integration, Inc. | Active sensor circuit with one or more T-network pairs |
| US7168974B2 (en) * | 2004-04-08 | 2007-01-30 | Leviton Manufacturing Co., Inc. | Three phase lighted plugs and connectors for indicating the absence of at least one phase |
| US7714591B2 (en) * | 2005-12-20 | 2010-05-11 | Kulite Semiconductor Products, Inc. | Apparatus and methods for linearizing piezoresistive wheatstone bridges |
| US8687981B2 (en) * | 2007-10-02 | 2014-04-01 | Luxtera, Inc. | Method and system for split voltage domain transmitter circuits |
| US8940598B2 (en) * | 2010-11-03 | 2015-01-27 | Texas Instruments Incorporated | Low temperature coefficient resistor in CMOS flow |
| US9157822B2 (en) * | 2011-02-01 | 2015-10-13 | Kulite Semiconductor Products, Inc. | Electronic interface for LVDT-type pressure transducers using piezoresistive sensors |
| KR101691278B1 (ko) | 2012-05-03 | 2017-01-09 | 애플 인크. | 휨 빔에 의해 지지되는 플랫폼 상의 하중 측정을 위한 모멘트 보상형 휨 빔 센서 |
| JP2014089087A (ja) * | 2012-10-30 | 2014-05-15 | Yamaha Corp | オフセットキャンセル回路 |
| US9983715B2 (en) | 2012-12-17 | 2018-05-29 | Apple Inc. | Force detection in touch devices using piezoelectric sensors |
| US9952703B2 (en) | 2013-03-15 | 2018-04-24 | Apple Inc. | Force sensing of inputs through strain analysis |
| EP2784521B1 (en) | 2013-03-28 | 2019-04-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Sensor apparatus and method |
| CN110134283B (zh) | 2013-10-28 | 2022-10-11 | 苹果公司 | 基于压电的力感测 |
| AU2015100011B4 (en) | 2014-01-13 | 2015-07-16 | Apple Inc. | Temperature compensating transparent force sensor |
| US9612170B2 (en) | 2015-07-21 | 2017-04-04 | Apple Inc. | Transparent strain sensors in an electronic device |
| US10055048B2 (en) | 2015-07-31 | 2018-08-21 | Apple Inc. | Noise adaptive force touch |
| US9874965B2 (en) | 2015-09-11 | 2018-01-23 | Apple Inc. | Transparent strain sensors in an electronic device |
| US9886118B2 (en) | 2015-09-30 | 2018-02-06 | Apple Inc. | Transparent force sensitive structures in an electronic device |
| US10006820B2 (en) * | 2016-03-08 | 2018-06-26 | Apple Inc. | Magnetic interference avoidance in resistive sensors |
| US10107873B2 (en) * | 2016-03-10 | 2018-10-23 | Allegro Microsystems, Llc | Electronic circuit for compensating a sensitivity drift of a hall effect element due to stress |
| US10209830B2 (en) | 2016-03-31 | 2019-02-19 | Apple Inc. | Electronic device having direction-dependent strain elements |
| US10365322B2 (en) | 2016-04-19 | 2019-07-30 | Analog Devices Global | Wear-out monitor device |
| US10162017B2 (en) | 2016-07-12 | 2018-12-25 | Allegro Microsystems, Llc | Systems and methods for reducing high order hall plate sensitivity temperature coefficients |
| US10133418B2 (en) | 2016-09-07 | 2018-11-20 | Apple Inc. | Force sensing in an electronic device using a single layer of strain-sensitive structures |
| US10458828B2 (en) * | 2017-02-07 | 2019-10-29 | Honeywell International Inc. | Flow sensor heater circuit calibration |
| US10444091B2 (en) | 2017-04-11 | 2019-10-15 | Apple Inc. | Row column architecture for strain sensing |
| US11024525B2 (en) | 2017-06-12 | 2021-06-01 | Analog Devices International Unlimited Company | Diffusion temperature shock monitor |
| US10309846B2 (en) | 2017-07-24 | 2019-06-04 | Apple Inc. | Magnetic field cancellation for strain sensors |
| US10520559B2 (en) | 2017-08-14 | 2019-12-31 | Allegro Microsystems, Llc | Arrangements for Hall effect elements and vertical epi resistors upon a substrate |
| US20200018662A1 (en) * | 2018-07-11 | 2020-01-16 | King Fahd University Of Petroleum And Minerals | Pipeline leak detection |
| US10782818B2 (en) | 2018-08-29 | 2020-09-22 | Apple Inc. | Load cell array for detection of force input to an electronic device enclosure |
| WO2020046493A1 (en) | 2018-08-29 | 2020-03-05 | Leviton Manufacturing Co., Inc. | Pin and sleeve device with indication |
| WO2020059246A1 (ja) * | 2018-09-21 | 2020-03-26 | パナソニックIpマネジメント株式会社 | センサ処理回路及びセンサシステム |
| US11682889B2 (en) | 2019-01-07 | 2023-06-20 | Leviton Manufacturing Co., Inc. | Electrical device with built-in sensors and/or communications |
| US11012037B2 (en) | 2019-03-22 | 2021-05-18 | Analog Devices International Unlimited Company | Techniques for controlling an auto-zero amplifier |
| US10833639B2 (en) * | 2019-04-12 | 2020-11-10 | Analog Devices International Unlimited Company | Method for aliasing reduction in auto zero amplifier |
| US20230216449A1 (en) * | 2022-01-03 | 2023-07-06 | Skyworks Solutions, Inc. | Methods for generating a constant current |
| CN115096348B (zh) * | 2022-08-26 | 2022-11-22 | 成都晨电智能科技有限公司 | 一种全桥温漂补偿电路、方法及应变传感系统 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3161045A (en) * | 1961-08-18 | 1964-12-15 | Fairchild Camera Instr Co | Strain gauge compensation |
| US3161821A (en) * | 1962-07-02 | 1964-12-15 | Statham Instrument Inc | Wheatstone bridge transducer circuits with external balancing means |
| US3629719A (en) * | 1969-08-22 | 1971-12-21 | Bulova Watch Co Inc | Differential amplifying system |
| US3646815A (en) * | 1970-03-26 | 1972-03-07 | Bailey Meter Co | Silicon pressure transducer circuit |
| GB1414144A (en) * | 1972-03-20 | 1975-11-19 | Welwyn Electric Ltd | Strain measuring device |
| US3893228A (en) * | 1972-10-02 | 1975-07-08 | Motorola Inc | Silicon pressure sensor |
| US3886799A (en) * | 1973-09-24 | 1975-06-03 | Nat Semiconductor Corp | Semiconductor pressure transducer employing temperature compensation circuits and novel heater circuitry |
| US3836796A (en) * | 1973-09-24 | 1974-09-17 | Nat Semiconductor Corp | Semiconductor pressure transducer employing novel temperature compensation means |
| US3841150A (en) * | 1973-11-02 | 1974-10-15 | Honeywell Inc | Strain gauge transducer signal conditioning circuitry |
| US3956927A (en) * | 1975-09-29 | 1976-05-18 | Honeywell Inc. | Strain gauge transducer apparatus |
| US4035823A (en) * | 1975-10-06 | 1977-07-12 | Honeywell Inc. | Stress sensor apparatus |
| US4125820A (en) * | 1975-10-06 | 1978-11-14 | Honeywell Inc. | Stress sensor apparatus |
| JPS52106054U (enExample) * | 1976-02-09 | 1977-08-12 | ||
| JPS581548B2 (ja) * | 1977-03-17 | 1983-01-11 | 株式会社横河電機製作所 | 薄膜ストレンゲ−ジ変換器 |
| US4202218A (en) * | 1977-09-28 | 1980-05-13 | International Telephone And Telegraph Corporation | Bridge circuit |
| US4205556A (en) * | 1979-02-12 | 1980-06-03 | Rockwell International Corporation | Circuitry for strain sensitive apparatus |
| JPS55113904A (en) * | 1979-02-26 | 1980-09-02 | Hitachi Ltd | Method of zero point temperature compensation for strain-electric signal transducer |
-
1980
- 1980-12-03 US US06/212,657 patent/US4345477A/en not_active Expired - Lifetime
-
1981
- 1981-11-09 CA CA000389753A patent/CA1176744A/en not_active Expired
- 1981-11-26 EP EP81305595A patent/EP0053486B1/en not_active Expired
- 1981-11-26 DE DE8181305595T patent/DE3176738D1/de not_active Expired
- 1981-12-03 JP JP56195087A patent/JPS57128075A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| EP0053486B1 (en) | 1988-05-11 |
| JPH0322065B2 (enExample) | 1991-03-26 |
| US4345477A (en) | 1982-08-24 |
| DE3176738D1 (en) | 1988-06-16 |
| JPS57128075A (en) | 1982-08-09 |
| EP0053486A3 (en) | 1984-05-30 |
| EP0053486A2 (en) | 1982-06-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEC | Expiry (correction) | ||
| MKEX | Expiry |