JPH03204995A - Manufacture of ceramic multilayered board - Google Patents
Manufacture of ceramic multilayered boardInfo
- Publication number
- JPH03204995A JPH03204995A JP28912290A JP28912290A JPH03204995A JP H03204995 A JPH03204995 A JP H03204995A JP 28912290 A JP28912290 A JP 28912290A JP 28912290 A JP28912290 A JP 28912290A JP H03204995 A JPH03204995 A JP H03204995A
- Authority
- JP
- Japan
- Prior art keywords
- laminate
- temperature
- amorphous glass
- ceramic multilayer
- temperature difference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000011521 glass Substances 0.000 claims abstract description 18
- 238000002425 crystallisation Methods 0.000 claims abstract description 8
- 230000008025 crystallization Effects 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims abstract description 6
- 230000009477 glass transition Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 27
- 238000010304 firing Methods 0.000 claims description 18
- 239000000945 filler Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 16
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract description 5
- 238000005245 sintering Methods 0.000 abstract description 5
- 239000004332 silver Substances 0.000 abstract description 3
- 229910052709 silver Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 229910052763 palladium Inorganic materials 0.000 abstract description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 2
- 238000007650 screen-printing Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000277269 Oncorhynchus masou Species 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229920001800 Shellac Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- UCVPKAZCQPRWAY-UHFFFAOYSA-N dibenzyl benzene-1,2-dicarboxylate Chemical compound C=1C=CC=C(C(=O)OCC=2C=CC=CC=2)C=1C(=O)OCC1=CC=CC=C1 UCVPKAZCQPRWAY-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004208 shellac Substances 0.000 description 1
- ZLGIYFNHBLSMPS-ATJNOEHPSA-N shellac Chemical compound OCCCCCC(O)C(O)CCCCCCCC(O)=O.C1C23[C@H](C(O)=O)CCC2[C@](C)(CO)[C@@H]1C(C(O)=O)=C[C@@H]3O ZLGIYFNHBLSMPS-ATJNOEHPSA-N 0.000 description 1
- 229940113147 shellac Drugs 0.000 description 1
- 235000013874 shellac Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、電子回路を構成するセラミック多層基板の
製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method of manufacturing a ceramic multilayer substrate constituting an electronic circuit.
従来の技術
近年、電子回路の小形化、高密度化の要求に対し、熱伝
導性のよいセラミックを使用したセラミック多層基板が
開発され、実用化が進められている。BACKGROUND OF THE INVENTION In recent years, ceramic multilayer substrates using ceramics with good thermal conductivity have been developed and put into practical use in response to demands for smaller electronic circuits and higher density.
そして、このセラミック多層基板の製造方法として、セ
ラミック粉末と有機物を混合したスラリでグリーンシー
トを作成して積層一体止するグリンシート積層法が注目
されている。As a method for manufacturing this ceramic multilayer substrate, a green sheet lamination method is attracting attention, in which green sheets are made from a slurry of ceramic powder and an organic substance and are laminated together.
第４図ａ ” ｆは従来の積層体またはセラミック多層
基板の構造を示す平面図と断面図、第５図はセラミック
多層基板の端部のうねり量を示す説明図である。なお、
第４図ａ、ｂは焼成前のもの、第４図ｃ、ｄは焼成後で
あって、上部厚膜３形成前のもの、第４図ｅ、ｆは焼成
後であって、上部厚膜形成後のものを示している。まだ
、焼成後のもの（第４図Ｃ〜ｆ）は焼成前（第４図ａ、
ｂ）のものと比べ、焼成収縮のため、第４図Ｃのように
長さｒｔＪだけ収縮される。Figures 4a and 4f are plan views and cross-sectional views showing the structure of a conventional laminate or ceramic multilayer board, and Figure 5 is an explanatory diagram showing the amount of waviness at the end of the ceramic multilayer board.
Figure 4 a and b are before firing, Figure 4 c and d are after firing and before the formation of the upper thick film 3, and Figure 4 e and f are after firing and the upper thick film Shown after formation. The ones after firing (Fig. 4 C to f) are the ones before firing (Fig. 4 a,
Compared to the case of b), due to firing shrinkage, the length rtJ is shrunk as shown in FIG. 4C.
第４図ａｘｆ、第５図において、１はグリーンシート、
２は導体ペースト、３は上部厚膜、１１は積層体であり
、導電ペースト２を印刷したグリーンシート１を所望枚
数積層したものである。In Fig. 4 axf and Fig. 5, 1 is a green sheet,
2 is a conductive paste, 3 is an upper thick film, and 11 is a laminate, in which a desired number of green sheets 1 on which conductive paste 2 is printed are laminated.
１ａは焼成したグリーンシートから成る絶縁層、２ａは
焼成した導体ペースト２から成る導体層、１１Ａは積層
体１１を焼成したセラミック多層基板、１１Ｂは焼成し
たセラミック多層基板１１Ａに上部厚膜を形成したセラ
ミック基板を示す。1a is an insulating layer made of a fired green sheet, 2a is a conductor layer made of fired conductive paste 2, 11A is a ceramic multilayer substrate made by firing the laminate 11, and 11B is an upper thick film formed on the fired ceramic multilayer substrate 11A. A ceramic substrate is shown.
そして、Δはセラミック多層基板１１Ａの端部に発生す
るうねり量を示す。Further, Δ indicates the amount of waviness generated at the end portion of the ceramic multilayer substrate 11A.
次に、上記従来例のセラミック多層基板の製造方法につ
いて説明する。Next, a method for manufacturing the conventional ceramic multilayer substrate will be described.
まず、セラミック粉末と有機物を混合したスラリでグリ
ーンシート１を作成する。First, a green sheet 1 is created using a slurry that is a mixture of ceramic powder and organic matter.
そして、複数のグリーンシート１にそれぞれグイアホー
ルをパンチングして形成し、それぞれ異なるパターンの
導体ペースト２をそれぞれグリーンシート１に印刷した
後、乾燥させる。Guia holes are formed by punching on each of the plurality of green sheets 1, and conductor pastes 2 of different patterns are printed on each of the green sheets 1, and then dried.
次に、異なるパターンを印刷したグリーンシート１を、
第４図ａ、ｂに示すように、所望枚数積層するとともに
、適切な温度、圧力でプレスして積層体１１を形成した
後、セラミック多層基板１１Ａができる。Next, green sheet 1 with different patterns printed on it,
As shown in FIGS. 4a and 4b, after laminating a desired number of sheets and pressing them at an appropriate temperature and pressure to form a laminate 11, a ceramic multilayer substrate 11A is obtained.
最後に、セラック多層基板１１Ａに最上層の上部厚膜３
を形成すると、セラミック多層基板１１Ｂが完成する。Finally, the top thick film 3 of the top layer is placed on the shellac multilayer substrate 11A.
By forming the ceramic multilayer substrate 11B, the ceramic multilayer substrate 11B is completed.
発明が解決しようとする課題
しかしながら、上記従来のセラミック多層基板の製造方
法では、積層体１１の焼成工程における昇温時の（積層
体１１の）表裏温度差が不適切であったため、第６図に
示すように、セラミック多層基板１１Ａの端部に発生す
るうねシ量Δが大きく、上部厚膜形成工程に移行できな
いという問題があった。Problems to be Solved by the Invention However, in the above-described conventional method for manufacturing a ceramic multilayer substrate, the temperature difference between the front and back surfaces (of the laminate 11) during heating in the firing process of the laminate 11 was inappropriate. As shown in FIG. 2, the amount of ridges Δ generated at the end of the ceramic multilayer substrate 11A was large, and there was a problem that it was impossible to proceed to the upper thick film forming step.
この発明は、このような従来の問題を解決するものであ
り、積層体の焼成時に適切なプロファイルを与えること
により、セラミック多層基板の端部に発生するうねシを
防止し、上部厚膜形成時の加工性を向上することのでき
るセラミック多層基板の製造方法を提供することを目的
とするものである０
課題を解決するための手段
この発明は、上記目的を達成するため、積層体の焼成ト
ップ温度を非晶質ガラスの結晶化ピ〜り点とし、昇温時
の積層体の表裏温度差を非晶質ガラスのガラス転移点〜
非晶質ガラスの結晶化ピーク点の間の温度範囲で、５０
℃以下となるようにしたものである。This invention solves these conventional problems, and by providing an appropriate profile during firing of the laminate, prevents ridges from occurring at the edges of a ceramic multilayer substrate and improves the formation of a thick film on the top. An object of the present invention is to provide a method for manufacturing a ceramic multilayer substrate that can improve processability during processing. The top temperature is taken as the crystallization peak point of the amorphous glass, and the temperature difference between the front and back sides of the laminate when the temperature is raised is the glass transition point of the amorphous glass.
In the temperature range between the crystallization peak points of amorphous glass, 50
℃ or less.
作 用
したがって、この発明によれば、積層体の焼成トップ温
度を非晶質ガラスの結晶化ピーク点とし、昇温時の積層
体の表裏温度差を非晶質ガラスのガラス転移点〜非晶質
ガラスの結晶化ピーク点の間の温度範囲で、５０ ”Ｃ
以下となるようにすることにより、非晶質ガラスの焼結
反応による収縮の表裏時間差が少なくなシ、セラミック
多層基板の端部に発生するりねシを防止することができ
、上部厚膜形成時の加工性を向上させることができる。Therefore, according to the present invention, the firing top temperature of the laminate is taken as the crystallization peak point of the amorphous glass, and the temperature difference between the front and back surfaces of the laminate when the temperature is raised is determined from the glass transition point of the amorphous glass to the amorphous glass. In the temperature range between the crystallization peak points of quality glass, 50 ”C
By doing the following, it is possible to reduce the time difference between the front and back sides of shrinkage due to the sintering reaction of the amorphous glass, prevent curls occurring at the edges of the ceramic multilayer substrate, and form a thick film on the top. It is possible to improve the processability at the time.
実施例
第１図はこの発明のグリーンシート積層法によるセラミ
ック多層基板の製造方法を示す工程図、第２図はこの発
明のセラミック多層基板及び比較例におけるセラミック
多層基板と端部のうねυ量との関係を示す説明図、第３
図は第２図の特性を示すグラフである。Example Fig. 1 is a process diagram showing a method for manufacturing a ceramic multilayer board by the green sheet lamination method of the present invention, and Fig. 2 shows the ceramic multilayer board of the present invention and the ceramic multilayer board of a comparative example, and the amount of undulation υ at the end. Explanatory diagram showing the relationship between
The figure is a graph showing the characteristics of FIG.
第２図において、実施例１，２は積層体を焼成トップ温
度５ｏｏｔ 、５００″Ｃ〜９００℃の温度範囲で積層
体の表裏温度差を３０℃、５０’Ｃとして焼成したもの
である。In FIG. 2, in Examples 1 and 2, the laminates were fired at a firing top temperature of 5oot in a temperature range of 500"C to 900C with a temperature difference between the front and back surfaces of the laminate of 30C and 50'C.
そして、比較例１〜４は積層体の焼成トップ温度９００
℃を変化させず、５０Ｑ℃〜９００℃の温度範囲で積層
体の表裏温度差を７０℃、９０℃。In Comparative Examples 1 to 4, the firing top temperature of the laminate was 900.
Without changing the temperature, the temperature difference between the front and back surfaces of the laminate was set at 70°C and 90°C within a temperature range of 50Q°C to 900°C.
１２０℃および１００℃として焼成したものである。These were fired at 120°C and 100°C.
次に、上記実施例のセラミック多層基板の製造方法につ
いて説明する。Next, a method for manufacturing the ceramic multilayer substrate of the above embodiment will be explained.
まス、アルミナ（酸化アルミニウムＡ１２０３）と、転
移点ＴＧが５００’Ｃ，軟化点Ｔｓが８００℃。Masu, alumina (aluminum oxide A1203) has a transition point TG of 500'C and a softening point Ts of 800°C.
結晶化ピーク点が９００℃のホウ珪酸素ガス（ｓ １０
２−Ｂ２０３ ）を６０重量％づつ混合して得たセラミ
ックパウダ１００重量部に対し、溶剤としてメチルエチ
ルケトンを５０重量部１分割剤としてポリエチレングリ
コールを２重量部、結合剤としてポリビニルブチラール
を１ａ重量部および可塑剤としてジベンジルフタレート
を４重量部加え、ボールミルで２４時間混合して作成し
たスラリでグリーンシートを作成する（ステップ２１）
。Borosilicate oxygen gas (s 10
To 100 parts by weight of ceramic powder obtained by mixing 60% by weight of 2-B203), 50 parts by weight of methyl ethyl ketone as a solvent, 2 parts by weight of polyethylene glycol as a dividing agent, 1 part by weight of polyvinyl butyral as a binder, and Add 4 parts by weight of dibenzyl phthalate as a plasticizer and mix in a ball mill for 24 hours to create a slurry to create a green sheet (Step 21)
.
そして、複数のグリーンシートにそれぞれグイアホール
をパンチングして形成しくステップ２２Ａ〜２２Ｃ）、
それぞれのグリーンシート上に銀＜Ａｑ）ｉたけ銀とパ
ラジウム（Ｐｄ）の合金ペーストをスクリーン印刷で、
第４図ａ、ｂに示すように、それぞれ異なるパターンの
導体層を印刷した後（ステップ２３Ａ〜２３Ｃ）、乾燥
させる（ステップ２４Ａ〜２４Ｃ）。Then, punch and form guaia holes on each of the plurality of green sheets (steps 22A to 22C),
An alloy paste of silver and palladium (Pd) was screen printed on each green sheet,
As shown in FIGS. 4a and 4b, after printing conductor layers with different patterns (steps 23A to 23C), they are dried (steps 24A to 24C).
次に、上記パターンを印刷したクリーンシートを所望枚
数積層するとともに、適切な温度、圧力、例えば８０’
Ｃの温度、 ２００Ｋｙ ／（ｙｄの圧力で加圧して積
層体を形成した後（ステップ２６）、積層体を、焼成ト
ップ温度９００’Ｃ、６００’Ｃ〜９００°Ｃの温度範
囲で積層体の表裏温度差を５０°Ｃ以下として焼成する
（ステップ２６）。Next, the desired number of clean sheets printed with the above pattern are laminated, and at an appropriate temperature and pressure, for example, 80'
After forming the laminate by pressurizing at a temperature of 200 Ky/(yd) (step 26), the laminate is heated at a temperature range of 600'C to 900°C, with a firing top temperature of 900'C. Firing is performed with a temperature difference between the front and back sides of 50°C or less (step 26).
最後に、焼成したセラミック基板に最上層の厚膜を形成
すると（ステップ２７）、セラミック多層基板が完成す
る（ステップ２８）。Finally, a thick film as the uppermost layer is formed on the fired ceramic substrate (step 27), and the ceramic multilayer substrate is completed (step 28).
上述のようにして作成した実施例１，２および比較例１
〜４のセラミック多層基板のうねり量Δ（第６図）は、
第２図、第３図に示す値であった。Examples 1 and 2 and Comparative Example 1 created as described above
The amount of waviness Δ (Fig. 6) of the ceramic multilayer substrate of ~4 is:
The values were as shown in FIGS. 2 and 3.
したがって、第２図、第３図の特性図から明らかなよう
に、比較例１〜４では、積層体の焼成を５００’Ｃ〜９
００ ’Ｃの温度範囲、すなわち非結晶質ガラスの焼結
反応が行われ、積層体の体積変化（収縮）が起こる段階
での積層体の表裏温度差が大き過ぎるため、うねり量が
増大し、最上層の上部厚膜形成工程に移行できなくなる
。Therefore, as is clear from the characteristic diagrams in FIGS. 2 and 3, in Comparative Examples 1 to 4, the laminate was fired at 500°C to 90°C.
In the temperature range of 00'C, that is, at the stage where the sintering reaction of the amorphous glass occurs and the volume change (shrinkage) of the laminate occurs, the temperature difference between the front and back surfaces of the laminate is too large, resulting in an increase in the amount of waviness. It becomes impossible to proceed to the step of forming the uppermost thick film.
これに対し、この発明の実施例１，２のように、焼成時
の積層体の表裏温度差を５０°Ｃ以下に抑えると、うね
υ量が飛躍的に改善され（低下し）、上部厚膜形成工程
への移行がスムーズにできる。On the other hand, as in Examples 1 and 2 of the present invention, when the temperature difference between the front and back sides of the laminate during firing is suppressed to 50°C or less, the amount of ridges υ is dramatically improved (decreased), and the upper A smooth transition to the thick film formation process is possible.
発明の効果
この発明は、上記実施例よシ明らかなように、積層体の
焼成工程における加熱段階で、非晶質ガラスの焼結反応
が起こって積層体の収縮が起こる際に、積層体の表裏温
度差を低く抑えているので、ｆｊｔ層体の表裏が収縮す
る時間差が小さくなシ、焼成後のセラミック多層基板の
端部に発生するうねりが防止でき、上部厚膜形成時の加
工性を向上させることができる。Effects of the Invention As is clear from the above-mentioned embodiments, the present invention has the advantage that when the sintering reaction of the amorphous glass occurs and the laminate shrinks during the heating step in the laminate firing process, the laminate shrinks. Since the temperature difference between the front and back surfaces is kept low, the time difference between the shrinkage of the front and back sides of the FJT layer body is small, and it is possible to prevent waviness that occurs at the edges of the ceramic multilayer substrate after firing, improving workability when forming the upper thick film. can be improved.
第１図はこの発明のグリーンシート積層法によるセラミ
ック多層基板の製造方法を示す工程図、第２図はこの発
明のセラミック多層基板及び比較例におけるセラミック
多層基板と端部のうねり量の関係を示す説明図、第３図
は第２図の特性を示すグラフ、第４図ａ −ｆは従来の
積層体またはセラミック多層基板の構造を示す平面図と
断面図、第６図はセラミック多層基板の端部のうねり量
を示す説明図である。
１・・・・・・グリーンシート、１ａ・・・・・・焼成
したグリーンシートから成る絶縁層、２・・・・・・導
体ペースト、３・・・・・上部厚膜、１１・・・・・・
積層体、１１Ａ・・・・・・セラミック多層基板、１１
Ｂ・・・・・・上部厚膜を形成したセラミック多層基板
。Fig. 1 is a process diagram showing a method for manufacturing a ceramic multilayer board using the green sheet lamination method of the present invention, and Fig. 2 shows the relationship between the ceramic multilayer board of the invention and a comparative example, and the amount of waviness at the edge. 3 is a graph showing the characteristics of FIG. 2, FIGS. 4 a - f are plan views and cross-sectional views showing the structure of a conventional laminate or ceramic multilayer substrate, and FIG. 6 is an end view of the ceramic multilayer substrate. FIG. DESCRIPTION OF SYMBOLS 1...Green sheet, 1a...Insulating layer made of fired green sheet, 2...Conductor paste, 3...Top thick film, 11... ...
Laminated body, 11A...Ceramic multilayer substrate, 11
B...Ceramic multilayer substrate with upper thick film formed.
Claims (1)
ック絶縁体層と、導体層を交互に重な合わせて積層体と
した後、焼成トップ温度を前記非晶質ガラスの結晶化ピ
ーク点とし、昇温度時の前記積層体の表裏温度差を前記
非晶質ガラスのガラス転移点と前記非晶質ガラスの結晶
化ピーク点の間で、５０℃以下として前記積層体を焼成
するセラミック多層基板の製造方法。After forming a laminate by alternately overlapping ceramic insulating layers composed of a crystalline filler and amorphous glass and conductor layers, the firing top temperature is set as the crystallization peak point of the amorphous glass, and the temperature is increased. A method for producing a ceramic multilayer substrate, wherein the temperature difference between the front and back surfaces of the laminate is set to 50° C. or less between the glass transition point of the amorphous glass and the crystallization peak point of the amorphous glass, and the laminate is fired. .
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28093289 | 1989-10-27 | ||
| JP1-280932 | 1989-10-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03204995A true JPH03204995A (en) | 1991-09-06 |
Family
ID=17631937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28912290A Pending JPH03204995A (en) | 1989-10-27 | 1990-10-25 | Manufacture of ceramic multilayered board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03204995A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55128899A (en) * | 1979-03-23 | 1980-10-06 | Ibm | Method of fabricating glass ceramic structure |
| JPS6112091A (en) * | 1984-06-27 | 1986-01-20 | 株式会社日立製作所 | Multilayer circuit board and method of producing same |
| JPS62292654A (en) * | 1986-06-10 | 1987-12-19 | Asahi Glass Co Ltd | Composition for glass ceramics substrate |
-
1990
- 1990-10-25 JP JP28912290A patent/JPH03204995A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55128899A (en) * | 1979-03-23 | 1980-10-06 | Ibm | Method of fabricating glass ceramic structure |
| JPS6112091A (en) * | 1984-06-27 | 1986-01-20 | 株式会社日立製作所 | Multilayer circuit board and method of producing same |
| JPS62292654A (en) * | 1986-06-10 | 1987-12-19 | Asahi Glass Co Ltd | Composition for glass ceramics substrate |
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