JPH03202468A - Film formation - Google Patents
Film formationInfo
- Publication number
- JPH03202468A JPH03202468A JP34277889A JP34277889A JPH03202468A JP H03202468 A JPH03202468 A JP H03202468A JP 34277889 A JP34277889 A JP 34277889A JP 34277889 A JP34277889 A JP 34277889A JP H03202468 A JPH03202468 A JP H03202468A
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- film
- base material
- gas
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract description 4
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 57
- 239000000463 material Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 36
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 6
- 230000001678 irradiating effect Effects 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 58
- 150000002500 ions Chemical class 0.000 description 8
- 239000000758 substrate Substances 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- CEDFMXXSTXOAGO-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Pt].[Au] CEDFMXXSTXOAGO-UHFFFAOYSA-N 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野］
この発明は、シリコンやセラミック等の基材の表面に金
属膜層、金属窒化物膜層、金属酸化物膜層を形成する膜
形成方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a film forming method for forming a metal film layer, a metal nitride film layer, or a metal oxide film layer on the surface of a base material such as silicon or ceramic. It is something.
従来の膜形成方法としては、一般に下記に記述する方法
が行われている。As a conventional film forming method, the method described below is generally performed.
■ 金属の真空蒸着とイオンビーム照射とを併用して膜
を形成するイオン蒸着薄膜形成法。■ Ion evaporation thin film formation method that uses a combination of vacuum evaporation of metal and ion beam irradiation to form a film.
■ 活性気体中で膜を槽底する材料の高周波プラズマを
発生させて、基材にバイアス電圧を印加して膜を形成す
るイオンブレーティング法。■ An ion blating method that generates high-frequency plasma of the material that forms the bottom of the film in active gas and applies a bias voltage to the base material to form the film.
■ プラズマＣＶＤ、熱ＣＶＤ等の各種ＣＶＤ法。■ Various CVD methods such as plasma CVD and thermal CVD.
■ 不活性ガスのイオンビームをターゲツト材に照射し
てスパッタ効果により膜を形成するイオンビームスパッ
タ法。■ Ion beam sputtering method, in which a target material is irradiated with an ion beam of inert gas to form a film through the sputtering effect.
（発明が解決しようとする課題）
しかしながら上記のような方法では、つぎのような問題
がある。(Problems to be Solved by the Invention) However, the above method has the following problems.
イオン蒸着薄膜形成法やイオンビームスバ、り法では、
蒸着金属のエネルギを広範囲に渡って制御することは不
可能である。また、一般の真空蒸着では、基材に蒸着さ
せる蒸発物質がＣＯ５″θ則に依存した分布をもって蒸
発し基材に対して収束性がないために高価な蒸着物’！
（金２白金等）を蒸着する場合は不経済である。In the ion vapor deposition thin film formation method and the ion beam bathing method,
It is not possible to control the energy of deposited metal over a wide range. In addition, in general vacuum evaporation, the evaporated substance to be deposited on the substrate evaporates with a distribution dependent on the CO5''θ law and has no convergence with respect to the substrate, resulting in expensive evaporated material!
It is uneconomical to vapor-deposit (gold-di-platinum, etc.).
イオンブレーティング法は、ガス圧力が１０−２〜１０
−”Ｔｏｒｒと低いために形成する膜に不純物を多く含
有し易い。また、高周波プラズマで得られるエネルギは
、高々数ｅＶと小さく金属元素のエネルギの制御性が悪
い。In the ion blating method, the gas pressure is 10-2 to 10
-''Torr is low, so the formed film tends to contain a large amount of impurities.Furthermore, the energy obtained by high-frequency plasma is only a few eV at most, and the controllability of the energy of the metal element is poor.
さらに、各種ＣＶＤ法は、結晶性の良い膜を得るために
は、基材を高温に加熱する必要があり利用できる基材材
料に制限がある。Furthermore, in various CVD methods, in order to obtain a film with good crystallinity, it is necessary to heat the base material to a high temperature, and there are limitations on the base material that can be used.
この発明の目的は、膜形成の材料の金属イオンビームお
よび気体イオンビームの照射エネルギの制御性が良く、
結晶性の良い膜を経済的にかつ低温で形成することので
きる膜形成方法を提供することである。The purpose of this invention is to have good controllability of the irradiation energy of metal ion beam and gas ion beam for film forming material,
An object of the present invention is to provide a film forming method that can form a film with good crystallinity economically and at a low temperature.
この発明の請求項（１）の膜形成方法は、金属イオンビ
ームおよび気体イオンビームを、同時または交互に基材
に照射して膜形成を行うものである。In the film forming method according to claim (1) of the present invention, a metal ion beam and a gas ion beam are irradiated onto a base material simultaneously or alternately to form a film.
請求項（２）の膜形成方法は、請求項（１）記載の膜形
成方法において、金属イオンビームの照射エネルギを１
０ＫｅＶ以下、気体イオンビームの照射エネルギを４０
ＫｅＶ以下とし、イオンビームの少なくともいずれか
一方の基材に照射する入射角を基材の法線に対して６０
°以下とするものである。The film forming method according to claim (2) is the film forming method according to claim (1), in which the irradiation energy of the metal ion beam is reduced to 1
Below 0 KeV, the irradiation energy of the gas ion beam is set to 40
KeV or less, and the angle of incidence at which at least one of the base materials is irradiated with the ion beam is 60° with respect to the normal to the base material.
° or less.
請求項（３）の膜形成方法は、請求項（１）または（２
）記載の膜形成方法において、気体イオンビームの気体
が不活性ガスであり、形成される膜が金属膜のものであ
る。The film forming method of claim (3) is the method of forming a film according to claim (1) or (2).
In the film forming method described in ), the gas of the gaseous ion beam is an inert gas, and the film to be formed is a metal film.
請求項（４）の膜形成方法は、請求項（１１または（２
）記載の膜形成方法において、気体イオンビームの気体
が窒素であり、形成される膜が金属窒化物膜のものであ
る。The film forming method of claim (4) is the method of forming a film according to claim (11 or (2).
In the film forming method described in ), the gas of the gaseous ion beam is nitrogen, and the film to be formed is a metal nitride film.
請求項（５）の膜形成方法は、請求項（１）または（２
）記載の膜形成方法において、気体イオンビームの気体
が酸素であり、形成される膜が金属酸化物膜のものであ
る。The film forming method of claim (5) is the method of forming a film according to claim (1) or (2).
In the film forming method described in ), the gas in the gaseous ion beam is oxygen, and the film to be formed is a metal oxide film.
この発明の膜形成方法の請求項（］、）の構威によると
、金属イオンビームおよび気体イオンビームを同時また
は交互に基材に照射することにより、各イオンビームの
照射エネルギを個別かつ広範囲に制御することができ、
イオンビームの照射は方向性が良いので材料の無駄がな
く経済的であり、基材を高温に加熱する必要がない。According to the structure of claims ( ], ) of the film forming method of the present invention, by irradiating a base material with a metal ion beam and a gas ion beam simultaneously or alternately, the irradiation energy of each ion beam can be applied individually and over a wide range. can be controlled,
Irradiation with an ion beam has good directionality, so there is no waste of material, making it economical, and there is no need to heat the base material to high temperatures.
請求項（２）の構成によると、金属イオンビームの照射
エネルギを１０ ＫｅＶ以下、気体イオンビームの照射
エネルギを４０ ＫｅＶ以下とし、イオンビームの少な
くともいずれか一方の基材に照射する入射角を基材の法
線に対して６０’以下にすることにより、形成される膜
のスパッタ効果を小さくすることができる。According to the structure of claim (2), the irradiation energy of the metal ion beam is 10 KeV or less, the irradiation energy of the gas ion beam is 40 KeV or less, and the incident angle of the ion beam at least one of the base materials is based on the irradiation energy of the metal ion beam. By setting the angle to be 60' or less with respect to the normal line of the material, the sputtering effect of the formed film can be reduced.
請求項（３）の構成によると、気体イオンビームに用い
られる気体を不活性ガスにすることにより、形成される
膜を金Ｗ！Ａ膜にすることができる。According to the configuration of claim (3), by using an inert gas as the gas used in the gas ion beam, the formed film is made of gold W! It can be made into A film.
請求項（４）の構成によると、気体イオンビームに用い
られる気体を窒素にすることにより、形成される膜を金
属窒化物膜にすることができる。According to the structure of claim (4), by using nitrogen as the gas used in the gaseous ion beam, the formed film can be a metal nitride film.
請求項（５）の構成によると、気体イオンビームに用い
られる気体を酸素にすることにより、形成される膜を金
属酸化物膜にすることができる。According to the structure of claim (5), by using oxygen as the gas used in the gaseous ion beam, the formed film can be a metal oxide film.
この発明の膜形成方法の一実施例を第１図に基づいて説
明する。An embodiment of the film forming method of the present invention will be described based on FIG.
この実施例では、ＩＣ基板に用いるＡ ｌ ｚ Ｏｘに
熱伝導性の良いＡｔＮ膜を形成した。In this example, an AtN film with good thermal conductivity was formed on Al z Ox used for the IC substrate.
内部の真空度を８ Ｘ １０−５Ｔｏｒｒ以上の高真空
に排気した真空装置内（図示せず）において、ホルダ１
に基材２を固定した。この基材２は、ＩＣ回路基板とな
るＡ Ｌ ｚ Ｏｓセラミック材料である。そして、こ
の基材２の下方にはカウフマン型やカスブ磁場を用いた
バケット型の金属イオン源４と気体イオン源５とが設け
られている。この金属イオン源４は金属を、気体イオン
源５は気体をイオン化して基材２の表面に照射する装置
である。さらに、基材２の前部側方には基材２の表面に
形成される膜の膜厚を測定する膜厚計３が設けられてい
る。In a vacuum device (not shown) in which the internal vacuum level is evacuated to a high vacuum of 8 x 10-5 Torr or higher, the holder 1 is
The base material 2 was fixed to. This base material 2 is an A L z Os ceramic material that becomes an IC circuit board. A bucket-shaped metal ion source 4 and a gas ion source 5 using a Kaufman type or Kasub magnetic field are provided below the base material 2. The metal ion source 4 is a device that ionizes a metal, and the gas ion source 5 is a device that ionizes a gas and irradiates the ionized light onto the surface of the base material 2. Furthermore, a film thickness gauge 3 for measuring the thickness of the film formed on the surface of the base material 2 is provided on the front side of the base material 2 .
上記のような構成において、室温（約２３°Ｃ）の条件
下で、基材２の表面に金属イオンａ４からアルミニウム
（Ａｔ ）のＡＩ イオンビーム４′と気体イオン源５
から窒素（Ｎ２）の窒素イオンビーム５′とを基材２の
表面の法線に対して各々Ｏ０】０°の角度にしてＩＫｅ
νの照射エネルギで照射した。なお、このときＡｔ イ
オンビーム４′と窒素イオンビーム５′とは同時に照射
して、その照創量の比は、Ａｔ／Ｎ＝１とした。そして
、基材２の表面に膜厚が１００００人の窒化アルミニウ
ム（ＡＩＮ）の膜を形成した。In the above configuration, an AI ion beam 4' of metal ions a4 to aluminum (At) and a gas ion source 5 are applied to the surface of the base material 2 at room temperature (approximately 23°C).
The nitrogen ion beam 5' of nitrogen (N2) is set at an angle of 0° with respect to the normal to the surface of the base material 2.
It was irradiated with an irradiation energy of ν. At this time, the At ion beam 4' and the nitrogen ion beam 5' were irradiated at the same time, and the ratio of the irradiation amount was set to At/N=1. Then, an aluminum nitride (AIN) film having a thickness of 10,000 was formed on the surface of the base material 2.
このようにして高真空度、低温度の条件下で、基材２と
なるＡ１．Ｏ，セラミンク材料との密着性が良く、良好
な結晶性で熱伝導性の良いＡ Ｉ Ｎ Ｉｌｌを形成す
ることができた。In this way, under conditions of high vacuum degree and low temperature, A1. It was possible to form A I N Ill with good adhesion to O, ceramic material, good crystallinity, and good thermal conductivity.
（発明の効果〕
この発明の請求項（１）の膜形成方法は、金属イオンビ
ームおよび気体イオンビームを同時または交互に基材に
照射することにより、各イオンビームの照射エネルギを
個別かつ広範囲に制御することができ、イオンビームの
照射は方向性が良いので材料の無駄がなく経済的であり
、基材を高温に加熱する必要かなく、形成される膜の不
純物を少なくして組成を良くすることができる。(Effects of the Invention) The film forming method according to claim (1) of the present invention irradiates a base material with a metal ion beam and a gas ion beam simultaneously or alternately, thereby controlling the irradiation energy of each ion beam individually and over a wide range. Since the ion beam irradiation has good directionality, it is economical because there is no waste of material, and there is no need to heat the base material to high temperatures, reducing impurities in the formed film and improving the composition. can do.
請求項（２）の膜形成方法は、金属イオンビームの照射
エネルギを１ＱＫｅＶ以下、気体イオンビームの照射エ
ネルギを４０ ＫｅＶ以下とし、イオンビームの少なく
ともいずれか一方の基体に照射する入射角を基材の法線
に対して６０°以下にして各イオンビームを同時または
交互に基材に照射することにより、照射エネルギの制御
性が良く、形成される膜のスパッタ効果を小さくするこ
とができる。In the film forming method of claim (2), the irradiation energy of the metal ion beam is set to 1QKeV or less, the irradiation energy of the gaseous ion beam is set to 40KeV or less, and the incident angle at which at least one of the substrates is irradiated with the ion beam is set to By irradiating the base material with each ion beam simultaneously or alternately at an angle of 60 degrees or less with respect to the normal line, the irradiation energy can be well controlled and the sputtering effect of the formed film can be reduced.
請求項（３）の膜形成方法は、気体イオンビームに用い
られる気体を不活性ガスにすることにより、基材の表面
に金属膜を形成することができる。In the film forming method of claim (3), a metal film can be formed on the surface of the base material by using an inert gas as the gas used in the gas ion beam.
請求項（４）の膜形成方法は、気体イオンビームに用い
られる気体を窒素にすることにより、基材の表面に金属
窒化物膜を形成することができる。In the film forming method of claim (4), a metal nitride film can be formed on the surface of the base material by using nitrogen as the gas used in the gas ion beam.
請求項（５）の構成によると、気体イオンビームに用い
られる気体を酸素にすることにより、基材の表面に金属
酸化物膜を形成することができる。According to the structure of claim (5), by using oxygen as the gas used in the gas ion beam, a metal oxide film can be formed on the surface of the base material.
第１図はこの発明の膜形成方法を説明するための膜形成
装置の概念図である。
２・・・基材、３・・・膜厚計、４・・・金属イオン源
、４′・・・ＡＩイオンビーム、５・・・気体イオン源
、５′・・・窒素イオンビーム
第１図FIG. 1 is a conceptual diagram of a film forming apparatus for explaining the film forming method of the present invention. 2... Base material, 3... Film thickness gauge, 4... Metal ion source, 4'... AI ion beam, 5... Gas ion source, 5'... Nitrogen ion beam first figure
Claims (5)
時または交互に基材に照射して膜形成を行う膜形成方法
。(1) A film forming method in which a base material is irradiated with a metal ion beam and a gas ion beam simultaneously or alternately to form a film.
Ｖ以下、前記気体イオンビームの照射エネルギを４０Ｋ
ｅＶ以下とし、前記イオンビームの少なくともいずれか
一方の前記基材に照射する入射角を前記基材の法線に対
して６０゜以下とする請求項（１）記載の膜形成方法。(2) The irradiation energy of the metal ion beam is 10Ke.
V or less, the irradiation energy of the gas ion beam is 40K.
The film forming method according to claim 1, wherein the ion beam is irradiated with at least one of the ion beams at an incident angle of 60° or less with respect to the normal to the base material.
、形成される前記膜が金属膜である請求項（１）または
（２）記載の膜形成方法。(3) The film forming method according to claim 1 or 2, wherein the gas of the gaseous ion beam is an inert gas, and the film to be formed is a metal film.
される前記膜が金属窒化物膜である請求項（１）または
（２）記載の膜形成方法。(4) The film forming method according to claim 1 or 2, wherein the gas of the gaseous ion beam is nitrogen, and the film to be formed is a metal nitride film.
される前記膜が金属酸化物膜である請求項（１）または
（２）記載の膜形成方法。(5) The film forming method according to claim 1 or 2, wherein the gas of the gaseous ion beam is oxygen, and the film to be formed is a metal oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34277889A JP2844779B2 (en) | 1989-12-29 | 1989-12-29 | Film formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34277889A JP2844779B2 (en) | 1989-12-29 | 1989-12-29 | Film formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03202468A true JPH03202468A (en) | 1991-09-04 |
| JP2844779B2 JP2844779B2 (en) | 1999-01-06 |
Family
ID=18356425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34277889A Expired - Fee Related JP2844779B2 (en) | 1989-12-29 | 1989-12-29 | Film formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2844779B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002065537A2 (en) * | 2001-02-09 | 2002-08-22 | Micron Technology, Inc. | Formation of metal oxide gate dielectric |
| EP1318209A1 (en) * | 2001-10-30 | 2003-06-11 | Anelva Corporation | Sputtering apparatus and film forming method |
-
1989
- 1989-12-29 JP JP34277889A patent/JP2844779B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002065537A2 (en) * | 2001-02-09 | 2002-08-22 | Micron Technology, Inc. | Formation of metal oxide gate dielectric |
| WO2002065537A3 (en) * | 2001-02-09 | 2003-05-01 | Micron Technology Inc | Formation of metal oxide gate dielectric |
| US6608378B2 (en) | 2001-02-09 | 2003-08-19 | Micron Technology, Inc. | Formation of metal oxide gate dielectric |
| EP1318209A1 (en) * | 2001-10-30 | 2003-06-11 | Anelva Corporation | Sputtering apparatus and film forming method |
| US7156961B2 (en) | 2001-10-30 | 2007-01-02 | Anelva Corporation | Sputtering apparatus and film forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2844779B2 (en) | 1999-01-06 |
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