JPH03195212A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH03195212A
JPH03195212A JP1337450A JP33745089A JPH03195212A JP H03195212 A JPH03195212 A JP H03195212A JP 1337450 A JP1337450 A JP 1337450A JP 33745089 A JP33745089 A JP 33745089A JP H03195212 A JPH03195212 A JP H03195212A
Authority
JP
Japan
Prior art keywords
output
voltage
current
vgs
reference voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1337450A
Other languages
Japanese (ja)
Other versions
JP2927847B2 (en
Inventor
Kiminori Kanamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1337450A priority Critical patent/JP2927847B2/en
Publication of JPH03195212A publication Critical patent/JPH03195212A/en
Application granted granted Critical
Publication of JP2927847B2 publication Critical patent/JP2927847B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE: To allow the semiconductor device to take no notice of the performance of a current sending comparator without increasing an output impedance by detecting an output current depending on a gatesource voltage of an output transistor(TR).
CONSTITUTION: Suppose that the reference voltage Vr of a reference voltage generator 5 is set to Vr=VGS2, when a current flowing to an output TR 4 is larger than ID2, the voltage VGS2 is larger than the voltage VGS2. Thus, a comparator 6 compares the gate-source voltage with the voltage Vr, outputs a signal to a gate drive circuit 7 to turn off the output TR 4. Since the voltage VGS when a current flowing to the output TR is smaller than the ID2 is smaller than the voltage VGS2, the TR keeps turning on. Thus, when a current larger than the current depending on the reference voltage Vr flows, the output TR 4 is turned off and when the current smaller than the current depending on the reference voltage Vr flows conversely, the output TR is turned on as it is. Thus, so-called overcurrent protection is attained.
COPYRIGHT: (C)1991,JPO&Japio
JP1337450A 1989-12-25 1989-12-25 Semiconductor device Expired - Lifetime JP2927847B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1337450A JP2927847B2 (en) 1989-12-25 1989-12-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1337450A JP2927847B2 (en) 1989-12-25 1989-12-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH03195212A true JPH03195212A (en) 1991-08-26
JP2927847B2 JP2927847B2 (en) 1999-07-28

Family

ID=18308749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1337450A Expired - Lifetime JP2927847B2 (en) 1989-12-25 1989-12-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2927847B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1317827C (en) * 2003-10-24 2007-05-23 恩益禧电子股份有限公司 Output circuit
WO2014181450A1 (en) * 2013-05-10 2014-11-13 株式会社 日立製作所 Apparatus for controlling insulating gate-type semiconductor element, and power conversion apparatus using apparatus for controlling insulating gate-type semiconductor element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63146614A (en) * 1986-12-10 1988-06-18 Ricoh Co Ltd Drain current detection circuit for field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63146614A (en) * 1986-12-10 1988-06-18 Ricoh Co Ltd Drain current detection circuit for field effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1317827C (en) * 2003-10-24 2007-05-23 恩益禧电子股份有限公司 Output circuit
WO2014181450A1 (en) * 2013-05-10 2014-11-13 株式会社 日立製作所 Apparatus for controlling insulating gate-type semiconductor element, and power conversion apparatus using apparatus for controlling insulating gate-type semiconductor element
JPWO2014181450A1 (en) * 2013-05-10 2017-02-23 株式会社日立製作所 Control device for insulated gate semiconductor element and power conversion device using the same
US9780660B2 (en) 2013-05-10 2017-10-03 Hitachi, Ltd. Apparatus for controlling insulating gate-type semiconductor element, and power conversion apparatus using apparatus for controlling insulating gate-type semiconductor element
US10038380B2 (en) 2013-05-10 2018-07-31 Hitachi, Ltd. Apparatus for controlling insulating gate-type semiconductor element, and power conversion apparatus using apparatus for controlling insulating gate-type semiconductor element

Also Published As

Publication number Publication date
JP2927847B2 (en) 1999-07-28

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