JPH04134271A - Output circuit - Google Patents

Output circuit

Info

Publication number
JPH04134271A
JPH04134271A JP2257747A JP25774790A JPH04134271A JP H04134271 A JPH04134271 A JP H04134271A JP 2257747 A JP2257747 A JP 2257747A JP 25774790 A JP25774790 A JP 25774790A JP H04134271 A JPH04134271 A JP H04134271A
Authority
JP
Japan
Prior art keywords
transistor
output
circuit
comparison
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2257747A
Other languages
Japanese (ja)
Inventor
Kiminori Kanamori
金森 公則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2257747A priority Critical patent/JPH04134271A/en
Publication of JPH04134271A publication Critical patent/JPH04134271A/en
Pending legal-status Critical Current

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  • Measurement Of Current Or Voltage (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To quicken the response in over-current sensing, by generating a reference voltage between a transistor for comparison and a constant current circuit. CONSTITUTION:The over-current sensing value of the current 10 flowing in an output terminal 100 can be represented by I/O=IS.n when VS=VO, where (n) derives from the ratio n:1 of the transistor 3 size to the transistor 2 size, and IS represents the current value flowing in a constant current circuit 4. Therein the output transistor 3 and the transistor 2 for comparison have the same characteristic in the transient where the output transistor 3 transfers from off to on, or vice versa, and also are driven by the same driver circuit 1, so that the voltage at the transient varies in the same manner, wherein there is no fear of mis-judging likely according to the conventional system. Therefore, it is no more necessary to prohibit a current sensing signal 101 in the transient from off to on, or vice versa. Accordingly a comparator can judge the overcurrent at the output terminal irrespective of voltage variation in the transient of the output transistor.

Description

【発明の詳細な説明】 [産業上の利用分野コ 本発明は半導体装置等に含まれる出力回路に関し、特に
出力端子に流れる電流を検出する過電流検出回路に関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an output circuit included in a semiconductor device or the like, and more particularly to an overcurrent detection circuit that detects a current flowing through an output terminal.

[従来の技術] 従来、この種の出力回路は、第3図に示すように、ドラ
イバー回路1で制御されるMOS)ランジスタ3を含ん
でおり、さらに、出力端子300を流れる電流を検出す
るために、出力端子300の電位VOを定電圧回路7で
発生したリファレンス電圧Vrとコンパレーター5で比
較していた。例えば、MOS)ランジスタ3のオン抵抗
をRONとし、出力端子300に流れる電流を10とす
れは■0=RON・■0であり、コンパレーター5の電
流検出信号はVr=VO=RON−LOになると反転す
る。従ってこの回路の電流検出値はl0=Vr/RON
で表され、IO>Vr/RONのとき過電流と判断され
る。
[Prior Art] Conventionally, this type of output circuit includes a MOS transistor 3 controlled by a driver circuit 1, as shown in FIG. In addition, the potential VO of the output terminal 300 is compared with the reference voltage Vr generated by the constant voltage circuit 7 by the comparator 5. For example, if the on-resistance of the MOS transistor 3 is RON, and the current flowing to the output terminal 300 is 10, then ■0=RON・■0, and the current detection signal of the comparator 5 is Vr=VO=RON-LO. Then, it will be reversed. Therefore, the current detection value of this circuit is l0=Vr/RON
When IO>Vr/RON, it is determined that there is an overcurrent.

[発明が解決しようとする課題] 上述した従来の出力回路は、出力端子電圧VOをリファ
レンス電圧V「と比較しており、Vr<VOの時は定常
電流値と判定し、Vr>V2O時は過電流と判断する。
[Problems to be Solved by the Invention] The conventional output circuit described above compares the output terminal voltage VO with the reference voltage V', and when Vr<VO, it is determined that the current is a steady current value, and when Vr>V2O, the current value is determined to be a steady current value. It is determined that there is an overcurrent.

これは出力トランジスタが十分にオン状態となる限りは
正常に機能するが、出力をオフするときもVr>VOと
なり、過電流と判定してしまうため、出力オフ時は電流
検出信号を禁止する必要がある。MOSトランジスタ3
がオフからオンに、またはオンからオフに移行する過渡
期には、コンパレーター5が誤判定してしまうため、こ
の過渡期もコンパレーター5の判定を禁止する必要があ
り、このi¥!渡期に真の過電流の検出が遅くなるとい
う問題点があった。
This functions normally as long as the output transistor is sufficiently turned on, but when the output is turned off, Vr > VO and an overcurrent is determined, so it is necessary to disable the current detection signal when the output is turned off. There is. MOS transistor 3
Since the comparator 5 makes an erroneous judgment during the transition period when the i\! transitions from off to on or from on to off, it is necessary to prohibit the judgment of the comparator 5 during this transition period as well. There was a problem in that the detection of true overcurrent was delayed during the transition period.

[課題を解決するための手段] 本発明の要旨は、トライバ回路と、第1電圧源に接続さ
れドライバ回路により制御される出力トランジスタと、
出力トランジスタと第2電圧源との間に接続された負荷
と、出力トランジスタと負荷との間に設けられた出力端
子を流れる過電流を検出するために出力端子の電圧を参
照電圧と比較するコンパレータとを有する出力回路にお
いて、第1電圧源と第2電圧源との間に比較用トランジ
スタと定電流回路とを直列接続して、比較用トランジス
タと定電流回路との間に上記参照電圧を発生させるとと
もに、比較用トランジスタの特性は出力トランジスタの
特性と同等にし、比較用トランジスタのトランジスタサ
イズは出力トランジスタのトランジスタサイズと異なら
せ、比較用トランジスタを出力トランジスタと同期させ
て制御するようにしたことである。
[Means for Solving the Problems] The gist of the present invention is to provide a driver circuit, an output transistor connected to a first voltage source and controlled by the driver circuit,
A load connected between the output transistor and the second voltage source, and a comparator that compares the voltage of the output terminal with a reference voltage in order to detect an overcurrent flowing through the output terminal provided between the output transistor and the load. In the output circuit, a comparison transistor and a constant current circuit are connected in series between the first voltage source and the second voltage source, and the reference voltage is generated between the comparison transistor and the constant current circuit. In addition, the characteristics of the comparison transistor are made equal to those of the output transistor, the transistor size of the comparison transistor is made different from the transistor size of the output transistor, and the comparison transistor is controlled in synchronization with the output transistor. be.

[発明の作用コ 出力トランジスタと比較用トランジスタは同期してオン
状態とオフ状態との間で切り換えられる。
[Operation of the Invention] The output transistor and the comparison transistor are synchronously switched between the on state and the off state.

出力トランジスタと比較用トランジスタは異なるものの
、トランジスタの特性は同一なので、切り換えの過渡期
における出力端子に発生する電圧変化は参照電圧の電圧
変化と類似している。したがって、コンパレータは出力
端子の過電流を出力トランジスタの過渡期における電圧
変動にかかわらず判断することができる。
Although the output transistor and the comparison transistor are different, since the characteristics of the transistors are the same, the voltage change occurring at the output terminal during the switching transition period is similar to the voltage change of the reference voltage. Therefore, the comparator can determine the overcurrent at the output terminal regardless of voltage fluctuations during the transition period of the output transistor.

[実施例] 次に本発明の実施例について図面を参照して説明する。[Example] Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の第1実施例の等他回路図である。1は
ドライバー回路、3は出力トランジスタ、2は出力トラ
ンジスタ3と同等の特性でトランジスタサイズの異なる
比較用トランジスタ、4は定電流回路、5はコンパレー
タ、6は負荷、100は出力端子である。これはハイサ
イドスイッチの例である。トランジスタ3とトランジス
タ2のトランジスタサイズの比をn:1とし、定電流回
路4を流れる電流値をISとしたとき、出力端子100
に流れる電流IOの過電流検出値は、vs=voの時で
あり、従って、l10=IS−nで表せる。本実施例の
場合、出力トランジスタ3がオフからオンに、オンから
オフに移行する過渡期は、出力トランジスタ3と比較用
トランジスタ2は同等の特性であり、しかも同一のドラ
イバー回路lてドライブされているので、過渡期の電圧
も同様に変化し、従来方式のような該判定はない。従っ
て、オフからオンにオンからオフに移行する過渡期の電
流検出信号101を禁止する必要がない。
FIG. 1 is a circuit diagram of a first embodiment of the present invention. 1 is a driver circuit, 3 is an output transistor, 2 is a comparison transistor which has the same characteristics as the output transistor 3 but has a different transistor size, 4 is a constant current circuit, 5 is a comparator, 6 is a load, and 100 is an output terminal. This is an example of a high side switch. When the transistor size ratio of transistor 3 and transistor 2 is n:1, and the current value flowing through constant current circuit 4 is IS, output terminal 100
The overcurrent detection value of the current IO flowing in is when vs=vo, and therefore can be expressed as l10=IS-n. In the case of this embodiment, during the transition period when the output transistor 3 transitions from off to on and from on to off, the output transistor 3 and comparison transistor 2 have the same characteristics and are driven by the same driver circuit. Therefore, the voltage during the transition period also changes in the same way, and there is no such determination as in the conventional method. Therefore, there is no need to inhibit the current detection signal 101 during the transition period from off to on and from on to off.

第2図は本発明の第2実施例を示す等他回路図である。FIG. 2 is a circuit diagram showing a second embodiment of the present invention.

この実施例では出力形式がローサイドスイッチになって
いるが、構成及び動作は第1実施例と同様なので対応す
る構成に同一の符号のみ付して説明を省略する。
In this embodiment, the output format is a low-side switch, but the configuration and operation are similar to those in the first embodiment, so corresponding components will only be designated with the same reference numerals and a description thereof will be omitted.

[発明の効果] 以上説明したように本発明は、出力トランジスタと、出
力トランジスタを同等の特性を有しトランジスタサイズ
の異なる第2のトランジスタを備え、出力トランジスタ
の出力電極は出力端子として負荷を接続し、第2のトラ
ンジスタの出力電極には定電流回路を接続し、ゲートは
同一のドライバー回路でドライブし、それぞれの出力電
極の電位を比較して電流検出することにより、出力のオ
フ→オンまたはオン→オフ過渡期の禁止が不要になり、
過電流検出応答を速くすることができるという効果があ
る。
[Effects of the Invention] As explained above, the present invention includes an output transistor and a second transistor having the same characteristics as the output transistor and a different transistor size, and the output electrode of the output transistor is used as an output terminal to connect a load. A constant current circuit is connected to the output electrode of the second transistor, the gate is driven by the same driver circuit, and the output is switched from OFF to ON by comparing the potentials of each output electrode and detecting the current. Prohibiting the on→off transition period is no longer necessary,
This has the effect of speeding up the overcurrent detection response.

従来回路であれば過電流検出応答速度は数10〜数10
0μsの遅れがでるが、本発明によれば遅れ時間はほぼ
コンパレータの応答速度となり数μs以下にできる。
If it is a conventional circuit, the overcurrent detection response speed is several tens to several tens.
Although a delay of 0 μs occurs, according to the present invention, the delay time can be reduced to several μs or less due to the response speed of the comparator.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の第1実施例を示す等価回路図、第2図
は本発明の第2実施例を示す等価回路図、第3図は従来
例の等価回路図である。 1 ・ ・ ・ ・ ・ つ001.。 3 ・ ・ ・ ・ ・ 4− ・ ・ ・ ・ 5 φ ・ ・ ・ ・ 6 φ ・ ・ ・ ・ 7 ・ ・ ・ ・ ・ 100 ・ ・ ・
FIG. 1 is an equivalent circuit diagram showing a first embodiment of the present invention, FIG. 2 is an equivalent circuit diagram showing a second embodiment of the invention, and FIG. 3 is an equivalent circuit diagram of a conventional example. 1 ・ ・ ・ ・ tsu001. . 3 ・ ・ ・ ・ ・ 4− ・ ・ ・ 5 φ ・ ・ ・ 6 φ ・ ・ ・ ・ 7 ・ ・ ・ ・ ・ 100 ・ ・ ・

Claims (2)

【特許請求の範囲】[Claims] (1)ドライバ回路と、 第1電圧源に接続されドライバ回路により制御される出
力トランジスタと、 出力トランジスタと第2電圧源との間に接続された負荷
と、 出力トランジスタと負荷との間に設けられた出力端子を
流れる過電流を検出するために出力端子の電圧を参照電
圧と比較するコンパレータとを有する出力回路において
、 第1電圧源と第2電圧源との間に比較用トランジスタと
定電流回路とを直列接続して、比較用トランジスタと定
電流回路との間に上記参照電圧を発生させるとともに、
比較用トランジスタの特性は出力トランジスタの特性と
同等にし、比較用トランジスタのトランジスタサイズは
出力トランジスタのトランジスタサイズと異ならせ、比
較用トランジスタを出力トランジスタと同期させて制御
するようにしたことを特徴とする出力回路。
(1) A driver circuit, an output transistor connected to the first voltage source and controlled by the driver circuit, a load connected between the output transistor and the second voltage source, and an output transistor provided between the output transistor and the load. In an output circuit having a comparator that compares the voltage of the output terminal with a reference voltage in order to detect an overcurrent flowing through the output terminal, a comparison transistor and a constant current are connected between the first voltage source and the second voltage source. The circuit is connected in series to generate the reference voltage between the comparison transistor and the constant current circuit, and
The characteristics of the comparison transistor are made equal to the characteristics of the output transistor, the transistor size of the comparison transistor is made different from the transistor size of the output transistor, and the comparison transistor is controlled in synchronization with the output transistor. Output circuit.
(2)上記比較用トランジスタを上記ドライバ回路で制
御することを特徴とする特許請求の範囲第1項記載の出
力回路。
(2) The output circuit according to claim 1, wherein the comparison transistor is controlled by the driver circuit.
JP2257747A 1990-09-27 1990-09-27 Output circuit Pending JPH04134271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2257747A JPH04134271A (en) 1990-09-27 1990-09-27 Output circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2257747A JPH04134271A (en) 1990-09-27 1990-09-27 Output circuit

Publications (1)

Publication Number Publication Date
JPH04134271A true JPH04134271A (en) 1992-05-08

Family

ID=17310539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2257747A Pending JPH04134271A (en) 1990-09-27 1990-09-27 Output circuit

Country Status (1)

Country Link
JP (1) JPH04134271A (en)

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WO2000079682A1 (en) * 1999-06-18 2000-12-28 Matsushita Electric Industrial Co., Ltd. Output controller
US6222709B1 (en) 1999-02-14 2001-04-24 Yazaki Corporation Device and method for supplying electric power to a load
US6229355B1 (en) 1999-02-26 2001-05-08 Yazaki Corporation Switching device for suppressing a rush current
US6269011B1 (en) 1999-02-14 2001-07-31 Yazaki Corporation Power supply system having semiconductor active fuse
EP1126610A2 (en) * 2000-02-14 2001-08-22 Yazaki Corporation Semiconductor active fuse operating at high supply voltage employing current oscillation
US6313690B1 (en) 1999-02-14 2001-11-06 Yazaki Corporation Semiconductor switching device with leakage current detecting junction
US6356138B1 (en) 1999-02-14 2002-03-12 Yazaki Corporation Switching device with break detecting function
US6377428B1 (en) 1999-02-26 2002-04-23 Yakaki Corporation Switching device having the capability of detecting an abnormality
US6392859B1 (en) 1999-02-14 2002-05-21 Yazaki Corporation Semiconductor active fuse for AC power line and bidirectional switching device for the fuse
US6400545B1 (en) 1999-02-19 2002-06-04 Yazaki Corporation Fuseless dc-dc converter
US6441557B1 (en) 1999-02-26 2002-08-27 Yazaki Corporation Auto light-control system
US6459167B1 (en) 1999-02-26 2002-10-01 Yazaki Corporation System for controlling electromotive force of motor of electric vehicle
EP1306680A1 (en) * 2001-10-24 2003-05-02 Delphi Technologies, Inc. Circuit for load current monitoring
WO2004068709A1 (en) * 2003-01-16 2004-08-12 Shindengen Electric Manufacturing Co.,Ltd. Switching circuit
WO2005112217A1 (en) * 2004-05-18 2005-11-24 Rohm Co., Ltd Excess current detecting circuit and power supply device provided with it
US7180330B2 (en) 2002-03-07 2007-02-20 Matsushita Electric Industrial Co., Ltd. Output circuit
US7323850B2 (en) 2004-08-02 2008-01-29 Matsushita Electric Industrial Co., Ltd. Current detection circuit and switching power supply using the same
JP2009130660A (en) * 2007-11-26 2009-06-11 Rohm Co Ltd Short circuit detection circuit
JP4755197B2 (en) * 2006-05-29 2011-08-24 株式会社オートネットワーク技術研究所 Power supply control device
JP2011259096A (en) * 2010-06-07 2011-12-22 Rohm Co Ltd Load drive circuit device and electrical equipment using the same
JP2012085448A (en) * 2010-10-12 2012-04-26 Lapis Semiconductor Co Ltd Charge control system and charge control device
JP2013083471A (en) * 2011-10-06 2013-05-09 Fuji Electric Co Ltd Overcurrent detection circuit
JP2013247547A (en) * 2012-05-28 2013-12-09 Toyota Motor Corp Current monitoring circuit
WO2015064386A1 (en) * 2013-10-30 2015-05-07 株式会社オートネットワーク技術研究所 Overcurrent protection circuit
JP2017175221A (en) * 2016-03-18 2017-09-28 トヨタ自動車株式会社 Semiconductor control circuit
JP2017188828A (en) * 2016-04-07 2017-10-12 トヨタ自動車株式会社 Gate voltage control circuit

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6356138B1 (en) 1999-02-14 2002-03-12 Yazaki Corporation Switching device with break detecting function
US6222709B1 (en) 1999-02-14 2001-04-24 Yazaki Corporation Device and method for supplying electric power to a load
US6269011B1 (en) 1999-02-14 2001-07-31 Yazaki Corporation Power supply system having semiconductor active fuse
US6392859B1 (en) 1999-02-14 2002-05-21 Yazaki Corporation Semiconductor active fuse for AC power line and bidirectional switching device for the fuse
US6313690B1 (en) 1999-02-14 2001-11-06 Yazaki Corporation Semiconductor switching device with leakage current detecting junction
US6400545B1 (en) 1999-02-19 2002-06-04 Yazaki Corporation Fuseless dc-dc converter
US6441557B1 (en) 1999-02-26 2002-08-27 Yazaki Corporation Auto light-control system
US6377428B1 (en) 1999-02-26 2002-04-23 Yakaki Corporation Switching device having the capability of detecting an abnormality
US6229355B1 (en) 1999-02-26 2001-05-08 Yazaki Corporation Switching device for suppressing a rush current
US6459167B1 (en) 1999-02-26 2002-10-01 Yazaki Corporation System for controlling electromotive force of motor of electric vehicle
US6424131B1 (en) 1999-06-18 2002-07-23 Matsushita Electric Industrial Co., Ltd. Output controller
WO2000079682A1 (en) * 1999-06-18 2000-12-28 Matsushita Electric Industrial Co., Ltd. Output controller
EP1126610A2 (en) * 2000-02-14 2001-08-22 Yazaki Corporation Semiconductor active fuse operating at high supply voltage employing current oscillation
US6441679B1 (en) 2000-02-14 2002-08-27 Yazaki Corporation Semiconductor active fuse operating at higher supply voltage employing current oscillation
EP1306680A1 (en) * 2001-10-24 2003-05-02 Delphi Technologies, Inc. Circuit for load current monitoring
US7180330B2 (en) 2002-03-07 2007-02-20 Matsushita Electric Industrial Co., Ltd. Output circuit
US7221208B2 (en) 2003-01-16 2007-05-22 Shindengen Electric Manufacturing Co., Ltd. Switching circuit
WO2004068709A1 (en) * 2003-01-16 2004-08-12 Shindengen Electric Manufacturing Co.,Ltd. Switching circuit
WO2005112217A1 (en) * 2004-05-18 2005-11-24 Rohm Co., Ltd Excess current detecting circuit and power supply device provided with it
US7323850B2 (en) 2004-08-02 2008-01-29 Matsushita Electric Industrial Co., Ltd. Current detection circuit and switching power supply using the same
US7479771B2 (en) 2004-08-02 2009-01-20 Panasonic Corporation Current detection circuit and switching power supply
JP4755197B2 (en) * 2006-05-29 2011-08-24 株式会社オートネットワーク技術研究所 Power supply control device
JP2009130660A (en) * 2007-11-26 2009-06-11 Rohm Co Ltd Short circuit detection circuit
JP2011259096A (en) * 2010-06-07 2011-12-22 Rohm Co Ltd Load drive circuit device and electrical equipment using the same
US8497671B2 (en) 2010-06-07 2013-07-30 Rohm Co., Ltd. Load driving device with over current protection
JP2012085448A (en) * 2010-10-12 2012-04-26 Lapis Semiconductor Co Ltd Charge control system and charge control device
JP2013083471A (en) * 2011-10-06 2013-05-09 Fuji Electric Co Ltd Overcurrent detection circuit
JP2013247547A (en) * 2012-05-28 2013-12-09 Toyota Motor Corp Current monitoring circuit
WO2015064386A1 (en) * 2013-10-30 2015-05-07 株式会社オートネットワーク技術研究所 Overcurrent protection circuit
JP2015088920A (en) * 2013-10-30 2015-05-07 株式会社オートネットワーク技術研究所 Overcurrent protection circuit
CN105637762A (en) * 2013-10-30 2016-06-01 株式会社自动网络技术研究所 Overcurrent protection circuit
CN105637762B (en) * 2013-10-30 2018-10-12 株式会社自动网络技术研究所 Overcurrent protection circuit
US10181846B2 (en) 2013-10-30 2019-01-15 Autonetworks Technologles, Ltd. Overcurrent protection circuit
JP2017175221A (en) * 2016-03-18 2017-09-28 トヨタ自動車株式会社 Semiconductor control circuit
JP2017188828A (en) * 2016-04-07 2017-10-12 トヨタ自動車株式会社 Gate voltage control circuit

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