JPH03190283A - Formation of photovoltaic device - Google Patents
Formation of photovoltaic deviceInfo
- Publication number
- JPH03190283A JPH03190283A JP1331711A JP33171189A JPH03190283A JP H03190283 A JPH03190283 A JP H03190283A JP 1331711 A JP1331711 A JP 1331711A JP 33171189 A JP33171189 A JP 33171189A JP H03190283 A JPH03190283 A JP H03190283A
- Authority
- JP
- Japan
- Prior art keywords
- silicon layer
- substrate
- recessed
- projecting
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 21
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 7
- 238000000206 photolithography Methods 0.000 abstract description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、太陽電池等の光起電力装置の形成方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of forming a photovoltaic device such as a solar cell.
従来、多結晶シリコンや微結晶シリコン等の結晶相全持
つシリコン層を用いた光起電力装置においては、このシ
リコン層を形成する方法として、シリコンを溶融させた
後、冷却して結晶化させる方法ノ他に、低コスト化のた
めに、高周波グロー放電法等の薄膜形成法によりガラス
、金属、セラミックス等の基板とに形成する方法が用い
られている。Conventionally, in photovoltaic devices that use a silicon layer with all crystal phases such as polycrystalline silicon or microcrystalline silicon, the method for forming this silicon layer is to melt the silicon and then cool it to crystallize it. In addition, in order to reduce costs, a method of forming a thin film on a substrate of glass, metal, ceramic, etc. using a thin film forming method such as a high frequency glow discharge method is used.
一方、従来では、シリコン層の表面に凹凸を与えること
により光電変換効率の向上を図ったものが知られている
（例えば、ＴｅｃｈｎｉｃａｌＤｉｇｅｓｔ ｏｆＩｎ
ｔｅｒｎａｔｉｏｎａｌＰＶＳＥＣ−１（１９８４）ｐ
、５８３参照）。On the other hand, conventional methods have been known in which the photoelectric conversion efficiency is improved by providing unevenness to the surface of the silicon layer (for example, Technical Digest of In
international PVSEC-1 (1984) p.
, 583).
これは、ガラス基板上のＴＣＯ表面に凹凸を形成し、こ
の上面に光電変換層（ｐｉｎ構造のａ−５ｉ）ｆ形成す
ることにより、ＴＣＯと光電変換層との界面や他の各層
のそれぞれの界面での光の表面反射を抑えると共に、入
射光に対する光吸収性を高め、いわゆる光閉じ込め効果
を発揮するものである。By forming irregularities on the surface of the TCO on the glass substrate and forming a photoelectric conversion layer (pin structure a-5i) on the top surface, the interface between the TCO and the photoelectric conversion layer and each of the other layers can be improved. This suppresses the surface reflection of light at the interface and increases the light absorption of incident light, thereby exhibiting a so-called light confinement effect.
しかし、以上の２つの従来技術を両立させ、高周波グロ
ー放電法による低コスト形成法を用いて、光入射側表面
に凹凸を有する結晶相を持つシリコン層を得るためには
、基板自体に凹凸をつけなければならず、製法が複雑化
する上、これによりコストが上昇してしまう等の問題を
生じる。However, in order to achieve both of the above two conventional techniques and to obtain a silicon layer having a crystalline phase with an uneven surface on the light incident side using a low-cost formation method using a high-frequency glow discharge method, it is necessary to create an uneven surface on the substrate itself. This causes problems such as complicating the manufacturing method and increasing costs.
本発明は、従来の技術の有するこのような問題点に留意
してなされたものであり、その目的とするところは、基
板自体に凹凸を形成することなく、高周波グロー放電法
によって表面に凹凸を有するシリコン層を得ることがで
きる光起電力装置の形成方法を提供することにある。The present invention has been made with these problems of the prior art in mind, and its purpose is to create irregularities on the surface using a high-frequency glow discharge method without forming irregularities on the substrate itself. It is an object of the present invention to provide a method for forming a photovoltaic device that can obtain a silicon layer having the following properties.
前記目的を達成するために、本発明の光起電力装置の形
成方法にあっては、ジクロロシラン（ｓｌ−ＨｚＣ／ｚ
）ｉ用いたグロー放電法により凹凸を持つシリコン薄膜
を形成できることを利用し、基板上に形成されるシリコ
ン層の一部を、ジクロロシランを用いた基板温度６００
°Ｃ以下の高周波グロー放電法により形成したことを特
徴とするものである。In order to achieve the above object, in the method for forming a photovoltaic device of the present invention, dichlorosilane (sl-HzC/z
) Taking advantage of the fact that a silicon thin film with unevenness can be formed by the glow discharge method using i, a part of the silicon layer formed on the substrate was heated to 600℃ using dichlorosilane.
It is characterized in that it is formed by a high frequency glow discharge method at temperatures below .degree.
前述した手段により、シリコン層の一部を凹凸シリコン
層とすることができ、シリコン層の光入射側表面の凹凸
化が実現し、いわゆる光閉じ込め効果が発揮される。By the above-described means, a part of the silicon layer can be made into an uneven silicon layer, and the surface of the silicon layer on the light incident side can be made uneven, and a so-called light confinement effect can be exhibited.
しかも、この凹凸シリコン層は通常の高周波グロー放電
法によって形成されるため、コストの大幅な上昇はない
。Furthermore, since this uneven silicon layer is formed by a normal high frequency glow discharge method, there is no significant increase in cost.
ｌ実施例を第１図に従って説明する。 An embodiment will be described with reference to FIG.
第１図において、（１）はステンレス等の金属性の基板
、（２）は基板ｉｌｌ上にジクロロシラン（Ｓ １Ｈｚ
ｃｌｚ ）を用いた高周波グロー放電法によって形成さ
れた凹凸シリコン層であり、基板温度６００°Ｃ以とで
は凹凸が小さくなるため、基板温度は例えば５５０°Ｃ
に設定されている。In Figure 1, (1) is a metallic substrate such as stainless steel, and (2) is dichlorosilane (S 1Hz) on the substrate ill.
This is an uneven silicon layer formed by a high-frequency glow discharge method using a substrate temperature of 600°C or higher.
is set to .
ここで、凹凸シリコン層（２）はその凹凸ゆえに良好な
導電性が得られない場合が生じるため、必要に応じて、
フォトリソグラフィあるいはレーザ光照射等によって基
板＋１１に通じる穴（２ａ） ’に形成し、後述する光
電変換層と基板＋１１との間を電気的に導通させる。Here, the uneven silicon layer (2) may not have good conductivity due to its unevenness, so if necessary,
A hole (2a)' communicating with the substrate +11 is formed by photolithography, laser beam irradiation, etc., and electrical continuity is established between the photoelectric conversion layer and the substrate +11, which will be described later.
（３）はｐ型多結晶又は微結晶シリコン層（３ｐ）とｎ
型多結晶又は微結晶シリコン層（３ｎ）との接合構造か
らなる光電変換層であり、凹凸シリコン層＋２１上にシ
ラン（Ｓ １Ｈ４）とジボラン（Ｂ２Ｈ６）との混合ガ
スを用いた高周波グロー放電法により基板温度７００℃
でｐ型シリコン層（３ｐ）が形成されると共に、この上
面にシラン（ＳｉＨ４）とホスフィン（ＰＨ３）との混
合ガスを用いた高周波グロー放電法により基板温度７０
０°Ｃでｎ型シリコン層（３ｎ）が形成される。(3) is a p-type polycrystalline or microcrystalline silicon layer (3p) and an n
This is a photoelectric conversion layer consisting of a junction structure with a polycrystalline or microcrystalline silicon layer (3n), and is produced using a high-frequency glow discharge method using a mixed gas of silane (S1H4) and diborane (B2H6) on the uneven silicon layer +21. The substrate temperature is 700℃.
A p-type silicon layer (3p) is formed on the upper surface of the p-type silicon layer (3p), and the substrate temperature is increased to 70°C by high-frequency glow discharge using a mixed gas of silane (SiH4) and phosphine (PH3).
An n-type silicon layer (3n) is formed at 0°C.
（４）は光電変換層（３）上にスパッタ法により形成さ
れたＩＴＵ（Ｉｎｄｉｕｍ Ｔｉｎ ０ｘｉｄｅ）より
なる透明電極である。(4) is a transparent electrode made of ITU (Indium Tin Oxide) formed by sputtering on the photoelectric conversion layer (3).
尚、前記実施例における基板［１１は必らずしも導電性
物質である必要はなく、絶縁性基板上に導電性物質を部
分的に付着させて電極としての機能を持たせるようにし
てもよい。Note that the substrate [11] in the above embodiments does not necessarily have to be a conductive material, and a conductive material may be partially attached to an insulating substrate to function as an electrode. good.
同様に、透明電極（４）の代りに、くし型の電極を用い
てもよい。Similarly, a comb-shaped electrode may be used instead of the transparent electrode (4).
又、前記凹凸シリコン層（２）と光電変換層（３）との
積層の順序は逆であってもよく、この場合、透明電極と
の電気的導通を保つために凹凸シリコン層（２）に必要
に応じて穴を形成する。Furthermore, the order of stacking the uneven silicon layer (2) and the photoelectric conversion layer (3) may be reversed. In this case, the uneven silicon layer (2) may be laminated in order to maintain electrical continuity with the transparent electrode. Form holes as necessary.
以上説明したように、本発明の光起電力装置の形成方法
によると、シリコン層の一部を高周波グロー放電法によ
って形成された凹凸層により構成でき、シリコン層の光
入射側表面を凹凸状態に形成できるため、いわゆる光閉
じ込め効果が発揮でき、高い光電変換率を得ることがで
き、しかも、シリコン層における光電変換層の形成方法
と同じ高周波グロー放電法によって凹凸層を得ることが
できるため、製法が非常に簡単になり、大幅なコスト上
昇を招くことがない。As explained above, according to the method for forming a photovoltaic device of the present invention, a part of the silicon layer can be formed by an uneven layer formed by a high-frequency glow discharge method, and the light incident side surface of the silicon layer can be made uneven. Because it can be formed, the so-called optical confinement effect can be exhibited, and a high photoelectric conversion rate can be obtained.Moreover, the uneven layer can be obtained by the high-frequency glow discharge method, which is the same method used to form the photoelectric conversion layer in the silicon layer, so the manufacturing method is very simple and does not result in a significant increase in costs.
第１図は本発明による光起電力装置の形成方法の１実施
例を示す光起電力装置の断面図である。
（１）・・基板、（２）・・・凹凸シリコン層、（３）
・・・光電変換層。FIG. 1 is a sectional view of a photovoltaic device showing one embodiment of the method for forming a photovoltaic device according to the present invention. (1)...Substrate, (2)...Uneven silicon layer, (3)
...Photoelectric conversion layer.
Claims (1)
形成方法において、 基板上に形成される前記シリコン層の一部を、ジクロロ
シラン（ＳｉＨ＿２Ｃｌ＿２）を用いた基板温度６００
℃以下の高周波グロー放電法により形成したことを特徴
とする光起電力装置の形成方法。(1) In a method for forming a photovoltaic device using a silicon layer having a crystalline phase, a part of the silicon layer formed on the substrate is heated to a substrate temperature of 600 using dichlorosilane (SiH_2Cl_2).
A method for forming a photovoltaic device, characterized in that the photovoltaic device is formed by a high frequency glow discharge method at temperatures below ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1331711A JPH03190283A (en) | 1989-12-20 | 1989-12-20 | Formation of photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1331711A JPH03190283A (en) | 1989-12-20 | 1989-12-20 | Formation of photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03190283A true JPH03190283A (en) | 1991-08-20 |
Family
ID=18246736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1331711A Pending JPH03190283A (en) | 1989-12-20 | 1989-12-20 | Formation of photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03190283A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
| JPS6010788A (en) * | 1983-06-30 | 1985-01-19 | Kanegafuchi Chem Ind Co Ltd | Substrate for solar cell |
| JPS6245079A (en) * | 1985-08-22 | 1987-02-27 | Kanegafuchi Chem Ind Co Ltd | Substrate for solar cell and manufacture thereof |
| JPS6395617A (en) * | 1986-10-03 | 1988-04-26 | ダウ・コーニング・コーポレーシヨン | Method of forming film containing amorphous polymer silicon |
-
1989
- 1989-12-20 JP JP1331711A patent/JPH03190283A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
| JPS6010788A (en) * | 1983-06-30 | 1985-01-19 | Kanegafuchi Chem Ind Co Ltd | Substrate for solar cell |
| JPS6245079A (en) * | 1985-08-22 | 1987-02-27 | Kanegafuchi Chem Ind Co Ltd | Substrate for solar cell and manufacture thereof |
| JPS6395617A (en) * | 1986-10-03 | 1988-04-26 | ダウ・コーニング・コーポレーシヨン | Method of forming film containing amorphous polymer silicon |
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