JPH03190171A - Ccd type solid-state image sensing device - Google Patents
Ccd type solid-state image sensing deviceInfo
- Publication number
- JPH03190171A JPH03190171A JP1322459A JP32245989A JPH03190171A JP H03190171 A JPH03190171 A JP H03190171A JP 1322459 A JP1322459 A JP 1322459A JP 32245989 A JP32245989 A JP 32245989A JP H03190171 A JPH03190171 A JP H03190171A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- horizontal transfer
- electrodes
- vertical
- transferred
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 19
- 238000001444 catalytic combustion detection Methods 0.000 claims description 13
- 230000005570 vertical transmission Effects 0.000 claims description 9
- 230000005571 horizontal transmission Effects 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000007423 decrease Effects 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はＣＣＤ型固体撮像素子に係るものであり、特に
信号電荷を上下に伝送させて画素部の上下に水平伝送Ｃ
ＣＤを設置することによって、水平ＣＣＤ間の伝送のた
めの多結晶シリコン電極なしに信号電荷を伝送し得る二
層の多結晶シリコン電極構造となっている固体撮像素子
に係るものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a CCD type solid-state image sensor, and in particular, it transmits signal charges vertically and horizontally transmits CCD to the top and bottom of a pixel section.
This relates to a solid-state imaging device that has a two-layer polycrystalline silicon electrode structure that can transmit signal charges without a polycrystalline silicon electrode for transmission between horizontal CCDs by installing a CD.
従来の技術
電荷結合素子（ＣＯＤ （Ｃｈａｒｇｅ Ｃｏｕｐｌｅ
ｄ Ｄｅｖｉｃｅ）型の固体撮像素子において、高解像
度を得るために多画素化が行なわれている。この場合、
水平転送部の駆動周波数が高（なって駆動回路の能力が
及ばないようになり、転送効率が落ちるようになるので
、二つの水平転送部を採用している。Conventional technology Charge coupled device (COD)
In order to obtain high resolution, the number of pixels has been increased in solid-state image sensors of the d Device type. in this case,
Since the driving frequency of the horizontal transfer section is high (the drive circuit's capability is no longer sufficient and the transfer efficiency decreases), two horizontal transfer sections are used.
第１図は従来の固体撮像素子の断面図を示したものであ
る。固体撮像素子は感光部であるホトダイオード１に入
射された光によって各画素に電荷を発生し、この電荷は
、垂直のブランキング期間に隣接設置された伝送部であ
る各垂直伝送チャンネル８に同時に移動される。伝送部
である垂直伝送チャンネル８には二つの電極２．３が設
置されており、各電極に所定のパルス電圧を印加するこ
とによって垂直伝送チャンネル８に移動された電荷が下
方向９に順次伝送される。FIG. 1 shows a cross-sectional view of a conventional solid-state image sensor. The solid-state image sensor generates a charge in each pixel by light incident on the photodiode 1, which is a photosensitive part, and this charge simultaneously moves to each vertical transmission channel 8, which is a transmission part installed adjacent to the vertical blanking period. be done. Two electrodes 2.3 are installed in the vertical transmission channel 8, which is the transmission section, and by applying a predetermined pulse voltage to each electrode, the charges transferred to the vertical transmission channel 8 are sequentially transmitted downward 9. be done.
この時、下方向に移動される電荷は各垂直伝送チャンネ
ル８で並列に移動される。この間にホトダイオード１は
次の信号を蓄積する状態になる。At this time, the charges moving downward are moved in parallel in each vertical transmission channel 8. During this time, the photodiode 1 is in a state of accumulating the next signal.
垂直伝送チャンネル８の下方向には第１と第２水平転送
部５．６が設置されており、下方向に移動した電荷が第
１、第２水平転送部５．６に移送され、出力アンプ７を
通じて順次に第１、第２出力端子３に出力される。First and second horizontal transfer sections 5.6 are installed below the vertical transmission channel 8, and the charge that has moved downward is transferred to the first and second horizontal transfer sections 5.6, and is then transferred to the output amplifier. 7 and are sequentially output to the first and second output terminals 3.
発明が解決しようとする課題
しかし、上記従来の固体撮像素子は、水平転送部５．６
間の信号電荷を移送するために、第３多結晶シリコン電
極４が別途に必要である。従って、多結晶シリコン電極
２．３．４を３層構造にするため製造工程が複雑になり
、水平転送部５．６間の転送電極を駆動するための別途
の駆動パルスが必要になる短所がある。Problems to be Solved by the Invention However, the above-mentioned conventional solid-state image sensor has a horizontal transfer section 5.6.
A third polycrystalline silicon electrode 4 is additionally required to transfer signal charges between the two. Therefore, since the polycrystalline silicon electrode 2.3.4 has a three-layer structure, the manufacturing process becomes complicated, and a separate drive pulse is required to drive the transfer electrode between the horizontal transfer sections 5.6. be.
本発明を目的は、製造工程を簡単にすることができ、且
つ、駆動パルス数を減らし得るＣＣＤ型固体撮像素子を
提供することである。SUMMARY OF THE INVENTION An object of the present invention is to provide a CCD type solid-state image sensor that can simplify the manufacturing process and reduce the number of driving pulses.
課題を解決するための手段
この目的を達成するために本発明は、画素部の上下に水
平転送部を配置して垂直転送電極である第１と第２多結
晶シリコン電極を上下方向に交互に配置して、信号電荷
を転送電極なしに上下水平転送部に移送する構成から成
るものである。Means for Solving the Problems In order to achieve this object, the present invention arranges horizontal transfer sections above and below a pixel section, and vertically alternates first and second polycrystalline silicon electrodes, which are vertical transfer electrodes. The structure is such that signal charges are transferred to the upper and lower horizontal transfer sections without transfer electrodes.
実施例
以下、添付図面に基づいて本発明の実施例を詳細に説明
する。Embodiments Hereinafter, embodiments of the present invention will be described in detail based on the accompanying drawings.
第２図は本発明のＣＣＤ型固体撮像素子の断面図である
。FIG. 2 is a cross-sectional view of the CCD type solid-state imaging device of the present invention.
同図において、水平転送部５．６を受光部の上下に各々
一つずつ形成し、垂直転送電極である第１と第２多結晶
シリコン電極２．３を同一行に上下方向に交互に配置す
る。この構成によって、奇数番目の列の垂直転送チャン
ネル８の信号電荷は、下方向９に移送されて第２水平転
送部６に転送されるようにする。そして、数番目の列の
垂直伝送チャンネル８の信号電荷は、上方向に移送され
て第１水平転送部５に転送される。In the figure, one horizontal transfer section 5.6 is formed above and below the light receiving section, and first and second polycrystalline silicon electrodes 2.3, which are vertical transfer electrodes, are arranged alternately in the vertical direction in the same row. do. With this configuration, the signal charges in the vertical transfer channels 8 in odd-numbered columns are transferred downward 9 to the second horizontal transfer section 6 . Then, the signal charges in the vertical transmission channels 8 in the several columns are transferred upward and transferred to the first horizontal transfer unit 5 .
したがって、本発明のＣＣＤ型固体撮像素子は、水平転
送部間の信号電荷を転送するための第３多結晶シリコン
電極４なしに、第１多結晶シリコン電極２と第２多結晶
シリコン電極３に印加される同一の垂直駆動パルスによ
って、奇数番目の列の垂直転送チャンネル８の信号電荷
を下方向９に移送して第２水平転送部６に、偶数番目の
列の垂直転送チャンネル８の信号電荷を上方向１０に移
送して第１水平転送部に、各々転送する。Therefore, in the CCD type solid-state image sensor of the present invention, the first polycrystalline silicon electrode 2 and the second polycrystalline silicon electrode 3 are connected to each other without the third polycrystalline silicon electrode 4 for transferring signal charges between the horizontal transfer sections. By the same applied vertical driving pulse, the signal charges in the vertical transfer channels 8 in the odd-numbered columns are transferred downward 9 to the second horizontal transfer section 6, and the signal charges in the vertical transfer channels 8 in the even-numbered columns are transferred downward. are transferred in the upward direction 10 and transferred to the first horizontal transfer section, respectively.
発明の効果
本発明のＣＣＤ型固体撮像素子は、水平転送部間の伝送
電極が不必要であって２層の多結晶シリコン電極だけで
製作可能であるので、製造工程も簡単になって生産性を
高めることができる利点がある。Effects of the Invention The CCD type solid-state imaging device of the present invention does not require transmission electrodes between horizontal transfer sections and can be manufactured using only two layers of polycrystalline silicon electrodes, which simplifies the manufacturing process and improves productivity. It has the advantage of increasing the
さらに、水平転送部間の転送電極を駆動させるための駆
動パルスが必要ないので、駆動回路が簡単になる利点が
ある。Furthermore, since a drive pulse for driving the transfer electrodes between the horizontal transfer sections is not required, there is an advantage that the drive circuit becomes simple.
第１図は従来の二つの水平転送部を持つＣＣＤ型固体撮
像素子の平面図、
第２図は本発明のＣＣＤ型固体撮像素子の平面図である
。
１ ：ホトダイオード、
２：第１多結晶シリコン電極、
３：第２多結晶シリコン電極、
４：水平転送部間の転送のための第３多結晶シリコン電
極、
５：第１水平転送部、
６：第２水平転送部、
７：出力アンプ、
８：垂直転送チャンネル、
９．１０：信号電荷転送方向。
第１図
第２図FIG. 1 is a plan view of a conventional CCD type solid-state image sensor having two horizontal transfer sections, and FIG. 2 is a plan view of a CCD type solid-state image sensor according to the present invention. 1: Photodiode, 2: First polycrystalline silicon electrode, 3: Second polycrystalline silicon electrode, 4: Third polycrystalline silicon electrode for transfer between horizontal transfer sections, 5: First horizontal transfer section, 6: 2nd horizontal transfer section, 7: Output amplifier, 8: Vertical transfer channel, 9.10: Signal charge transfer direction. Figure 1 Figure 2
Claims (1)
素子において、受光部の上下に各々第１水平伝送ＣＣＤ
５と第２水平伝送ＣＣＤ６を構成し、 奇数番目の列の垂直伝送チャンネル８の信号電荷は上方
向１０と下方向１０の中の一つの方向に伝送され、偶数
番目の垂直伝送チャンネル８の信号電荷は残りの方向に
伝送されて各々上記水平伝送ＣＣＤ５、６に印加される
ように構成し、 垂直伝送電極である第１と第２多結晶シリコン電極２、
３を同一行で上下方向に交代に配置されるように構成す
ることを特徴とするＣＣＤ型固体撮像素子。[Claims] 1) In a CC type solid-state image sensor having two horizontal transmission CCDs 5 and 6, a first horizontal transmission CCD is provided above and below the light receiving section, respectively.
5 and a second horizontal transmission CCD 6, the signal charge of the vertical transmission channel 8 of the odd-numbered column is transmitted in one of the upward direction 10 and the downward direction 10, and the signal charge of the even-numbered vertical transmission channel 8 is transmitted. The charge is transmitted in the remaining direction and applied to the horizontal transmission CCDs 5 and 6, respectively, and first and second polycrystalline silicon electrodes 2, which are vertical transmission electrodes,
3 are arranged alternately in the vertical direction in the same row.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/300,818 US5043815A (en) | 1988-01-29 | 1989-01-23 | Video signal processing device |
| JP1322459A JPH03190171A (en) | 1989-12-12 | 1989-12-12 | Ccd type solid-state image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1322459A JPH03190171A (en) | 1989-12-12 | 1989-12-12 | Ccd type solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03190171A true JPH03190171A (en) | 1991-08-20 |
Family
ID=18143892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1322459A Pending JPH03190171A (en) | 1988-01-29 | 1989-12-12 | Ccd type solid-state image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03190171A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004228157A (en) * | 2003-01-20 | 2004-08-12 | Sony Corp | Solid-state imaging device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51135484A (en) * | 1975-05-20 | 1976-11-24 | Matsushita Electronics Corp | Charge transfer device |
| JPS57207486A (en) * | 1981-06-16 | 1982-12-20 | Matsushita Electric Ind Co Ltd | Solid-state image pickup device |
| JPS5897971A (en) * | 1981-12-04 | 1983-06-10 | Sanyo Electric Co Ltd | Solid-state image pickup device |
| JPS60206169A (en) * | 1984-02-29 | 1985-10-17 | フエアチアイルド カメラ アンド インストルメント コーポレーシヨン | Mos image processor having monochromatic and color adaptability and signal reading diversity |
| JPH01238156A (en) * | 1988-03-18 | 1989-09-22 | Sanyo Electric Co Ltd | Solid-state image sensing device |
-
1989
- 1989-12-12 JP JP1322459A patent/JPH03190171A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51135484A (en) * | 1975-05-20 | 1976-11-24 | Matsushita Electronics Corp | Charge transfer device |
| JPS57207486A (en) * | 1981-06-16 | 1982-12-20 | Matsushita Electric Ind Co Ltd | Solid-state image pickup device |
| JPS5897971A (en) * | 1981-12-04 | 1983-06-10 | Sanyo Electric Co Ltd | Solid-state image pickup device |
| JPS60206169A (en) * | 1984-02-29 | 1985-10-17 | フエアチアイルド カメラ アンド インストルメント コーポレーシヨン | Mos image processor having monochromatic and color adaptability and signal reading diversity |
| JPH01238156A (en) * | 1988-03-18 | 1989-09-22 | Sanyo Electric Co Ltd | Solid-state image sensing device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004228157A (en) * | 2003-01-20 | 2004-08-12 | Sony Corp | Solid-state imaging device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH10136391A (en) | Solid-state image pickup device | |
| US5043819A (en) | CCD solid state image sensor with two horizontal transfer CCDs corresponding to both odd and even columns of elements | |
| JPH04262679A (en) | Driving method for solid-state image pickup device | |
| US6034366A (en) | Color linear CCD image device and driving method | |
| JP2905806B2 (en) | Color linear charge-coupled device | |
| JPS6038869A (en) | Two-dimensional charge coupled device image sensor | |
| US8045025B2 (en) | Image pickup device adaptable to display fewer vertical pixels | |
| JPH03190171A (en) | Ccd type solid-state image sensing device | |
| JPH07235655A (en) | Solid state image sensor | |
| KR910005394B1 (en) | Ccd solid-state image sensor devices | |
| CN101677370B (en) | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus | |
| JPS60134675A (en) | Solid-state image pickup device and its manufacture | |
| JP3481845B2 (en) | Solid-state imaging device | |
| JP3367852B2 (en) | Solid-state imaging device | |
| JP2940802B2 (en) | Solid-state imaging device and driving method thereof | |
| JP2983864B2 (en) | Solid-state imaging device and driving method thereof | |
| JPS6141278A (en) | Solid-state image pickup element | |
| JPH0574992B2 (en) | ||
| KR930008530B1 (en) | Structure for ccd image sensor | |
| JP2713674B2 (en) | Method for manufacturing solid-state imaging device | |
| JP4006625B2 (en) | Solid-state imaging device and driving method thereof | |
| JPS63234677A (en) | Drive method of charge coupling element | |
| JPH04100374A (en) | Driving method for image sensor | |
| JPH0560303B2 (en) | ||
| JPS6151465B2 (en) |