JPH03185771A - Photodetective element - Google Patents
Photodetective elementInfo
- Publication number
- JPH03185771A JPH03185771A JP1325660A JP32566089A JPH03185771A JP H03185771 A JPH03185771 A JP H03185771A JP 1325660 A JP1325660 A JP 1325660A JP 32566089 A JP32566089 A JP 32566089A JP H03185771 A JPH03185771 A JP H03185771A
- Authority
- JP
- Japan
- Prior art keywords
- light
- cap layer
- spectral sensitivity
- layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 4
- 230000031700 light absorption Effects 0.000 claims description 19
- 230000035945 sensitivity Effects 0.000 abstract description 30
- 230000003595 spectral effect Effects 0.000 abstract description 30
- 230000015572 biosynthetic process Effects 0.000 abstract description 14
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract description 3
- 230000002542 deteriorative effect Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 62
- 238000002834 transmittance Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910005091 Si3N Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は■−Ｖ族半導体結晶のへテロ接合を用いた受光
素子に利用する。特に、分光感度特性の改善に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention is applied to a light receiving element using a heterojunction of a -V group semiconductor crystal. In particular, it relates to improving spectral sensitivity characteristics.
本発明は、■−Ｖ族半導体結晶のへテロ接合を用い、受
光面にキャップ層および反射防止膜が設けられた受光素
子において、
受光領域のＩｎＰキャップ層の厚さを電極形成領域より
薄くすることにより、
電極形成の信頼性を損ねることなく分光感度特性を改善
するものである。The present invention uses a heterojunction of ■-V group semiconductor crystal, and in a light-receiving element in which a cap layer and an antireflection film are provided on the light-receiving surface, the thickness of the InP cap layer in the light-receiving region is made thinner than in the electrode formation region. This improves the spectral sensitivity characteristics without impairing the reliability of electrode formation.
従来から、近赤外など波長の比較的長い光を受光するた
めには、特殊な場合を除き、ゲルマニウムＧｅやガリウ
ム・インジウム・ヒ素リンＧａ１ｎＡｓＰを材料とする
受光素子が用いられてきた。特にＧａ、＋１１１−ｘＡ
ｓｙＰ＋−ｙ （ただしＸ％ｙは混晶比〉は、その混晶
比を適当に選択することにより、格子定数がＩｎＰ結晶
に一致するようにして、バンドギャップエネルギを変化
させることができる。これにより、はぼ１〜１．７μｍ
の波長帯域において、必要な分光感度波長帯域の光吸収
層をＩｎＰ結晶基板上にエピタキシャル成長させること
ができる。さらにこのＧａｊｒ＋１−ＪＳｙＰ Ｉ−７
層上にＩｎＰキャップ層を形成した受光素子も公知であ
る。また最近では、暗電流、周波数応答特性、増倍雑音
特性などの電気的特性や約１．５μｍより長波長側の分
光感度特性の点で、Ｇｅ受光素子より優れたＧａ１ｎＡ
ｓＰ受光素子が製造されている。詳しくは、酒井士部
他、電子通信学会論文誌、第Ｊ６２−Ｃ巻、第１０号、
’ ７９／１０に示されている。Conventionally, in order to receive light with a relatively long wavelength such as near-infrared light, a light receiving element made of germanium Ge or gallium indium arsenide phosphide Ga1nAsP has been used, except in special cases. Especially Ga, +111-xA
syP+-y (where X%y is the mixed crystal ratio) By appropriately selecting the mixed crystal ratio, the band gap energy can be changed so that the lattice constant matches that of InP crystal. Depending on the size, the diameter is 1 to 1.7 μm.
A light absorption layer having a required spectral sensitivity wavelength band can be epitaxially grown on an InP crystal substrate. Furthermore, this Gajr+1-JSyP I-7
A light receiving element having an InP cap layer formed thereon is also known. In addition, recently, Ga1nA is superior to Ge photodetectors in terms of electrical characteristics such as dark current, frequency response characteristics, and multiplication noise characteristics, as well as spectral sensitivity characteristics at wavelengths longer than about 1.5 μm.
An sP photodetector has been manufactured. For more information, see Shibu Sakai
et al., Journal of the Institute of Electronics and Communication Engineers, Volume J62-C, No. 10,
'79/10.
第５図は従来例受光素子の断面図を示す。FIG. 5 shows a cross-sectional view of a conventional light receiving element.
この受光素子は、ｎ＋形［ｎＰ基板ｌ５ＩｎＰバッファ
層２、ｎ−形Ｇａ１ｎＡｓ光吸収層３およびｎ形１ｎＰ
キャップ層４がエピタキシャルに形成された構造をもつ
。キャップ層４から光吸収層３にかけては、Ｚｎ拡散に
よりｐ゛領域５が形成される。ｐ＋領域５の表面にはｐ
゛側電極６が設けられ、基板１の裏面にはｎ１側電極７
が設けられる。キャップ層４の表面には、反射防止膜と
してＳｉ、Ｎ、膜８およびＳｉ口、膜９が設けられる。This light-receiving element consists of an n+ type [nP substrate l5InP buffer layer 2, an n-type Ga1nAs light absorption layer 3, and an n-type 1nP
The cap layer 4 has a structure formed epitaxially. A p' region 5 is formed from the cap layer 4 to the light absorption layer 3 by Zn diffusion. On the surface of p+ region 5, p
An n1 side electrode 6 is provided on the back surface of the substrate 1.
is provided. On the surface of the cap layer 4, a Si, N, film 8 and a Si film 9 are provided as antireflection films.
Ｇａｊｎｌ −ＪｓｙＰ ｌ−ｙのうち特に混晶比がｘ
＝０．４７、ｙ＝１のもの、すなわちＧａｏ、 ＜ｔ
ｌｎｏ、 ｓｓ八へは、格子定数がＩｎＰに一致するも
ののうち、バンドギャップエネルギが室温で０．７５ｅ
Ｖと最も小さい。したがってこれを光吸収層３として用
いると、約０．９〜１．７μｍの分光感度波長が得られ
る。Gajnl -JsyP ly, especially when the mixed crystal ratio is x
=0.47, that of y=1, i.e. Gao, <t
For lno, ss8, among those whose lattice constants match those of InP, the band gap energy is 0.75e at room temperature.
V and the smallest. Therefore, when this is used as the light absorption layer 3, a spectral sensitivity wavelength of about 0.9 to 1.7 μm can be obtained.
第６図はこの受光素子の分光感度特性の理論計算値を示
す。FIG. 6 shows theoretically calculated values of the spectral sensitivity characteristics of this light receiving element.
この特性は、伊藤良−監修、「化合物半導体デバイスハ
ンドブック」、昭和３１年９日２０日、サイエンスフォ
ーラム社刊に示された理論計算方法により求めたもので
あり、キャップＮ４の厚さを１μｍとした。また、キャ
ップ層４を基板とする反射防止膜の透過率対波長特性が
第７図に示した曲線を描くものとした。This characteristic was obtained using the theoretical calculation method shown in "Compound Semiconductor Device Handbook", supervised by Ryo Ito, published by Science Forum on September 20, 1955, and the thickness of cap N4 was assumed to be 1 μm. did. Further, the transmittance versus wavelength characteristic of the antireflection film using the cap layer 4 as a substrate was assumed to draw the curve shown in FIG.
第６図に示した特性において、短波長側、すなわち１μ
ｍ以下の分光感度の低下は、キャップＮ４の光吸収によ
る。In the characteristics shown in Figure 6, on the short wavelength side, that is, 1μ
The decrease in spectral sensitivity below m is due to light absorption by the cap N4.
しかし、従来の受光素子では、二つの大きな問題がある
。However, conventional light receiving elements have two major problems.
第一の問題点は、ＩｎＰキャップ層が約１〜１．７μｍ
の波長帯で透明な窓となるため、反射防止膜が実際には
Ｓｌ［１２膜、Ｓｉ、Ｎ４膜および］ｎＰキャップ層の
三層構造となることである。このため、入射光の反射お
よび干渉が生じる。The first problem is that the InP cap layer is approximately 1 to 1.7 μm thick.
Since it becomes a transparent window in the wavelength range of , the antireflection film actually has a three-layer structure of Sl[12 film, Si, N4 film, and ]nP cap layer. This causes reflection and interference of the incident light.
第８図に分光感度特性の一例を示す。横軸は波長であり
、縦軸は外部量子効率を示す。外部量子効率の値は、５
１０２膜、Ｓｉ、Ｎ、膜およびｌｎＰキャップ層の厚さ
をそれぞれ０．１４μｍ、０．１３μＣＩ、０．９μｍ
とし、Ｇａ１ｎＡｓ光吸収層の厚さを１．３μｍとした
ときの測定値および計算値を示す。実線が測定値であり
、破線が計算値である。この計算値は、上述した酒井等
の論文に示されている。外部量子効率η。０は、
η。１＝分光感度／絶対分光感度
により求められ、理論計算値とほぼ一致する。FIG. 8 shows an example of spectral sensitivity characteristics. The horizontal axis represents wavelength, and the vertical axis represents external quantum efficiency. The value of external quantum efficiency is 5
The thicknesses of the 102 film, Si, N, film and lnP cap layer were 0.14 μm, 0.13 μCI, and 0.9 μm, respectively.
The measured values and calculated values are shown when the thickness of the Ga1nAs light absorption layer is 1.3 μm. The solid line is the measured value, and the broken line is the calculated value. This calculated value is shown in the paper by Sakai et al. mentioned above. External quantum efficiency η. 0 is η. 1=Spectral sensitivity/absolute spectral sensitivity, which almost matches the theoretically calculated value.
第８図に示したように、波長的１〜１．７μｍの分光感
度は、５１０２膜、５１３ＮＪ膜および１ｎＰキャップ
層の三層構造により入射光の反射および干渉が生じるた
め、緩やかな凹凸を生じてしまう。As shown in Figure 8, the spectral sensitivity in the wavelength range of 1 to 1.7 μm is due to reflection and interference of incident light due to the three-layer structure of the 5102 film, 513NJ film, and 1nP cap layer, resulting in gentle unevenness. It ends up.
反射防止膜としてＳｉ３Ｎ、膜だけを用いた場合でも、
Ｓｉ３Ｎ、膜とＩｎＰキャップ層との二層構造により同
様に分光感度特性の凹凸が生じる。Even when using only Si3N film as an anti-reflection film,
The two-layer structure of the Si3N film and the InP cap layer similarly causes irregularities in the spectral sensitivity characteristics.
同一波長を同一条件で受光する場合には、分光感度が波
長により変動しても問題となることはない。しかし、例
えば受光素子の温度が変動すると、特性が波長方向に移
動し、入射光強度が同じでも受光出力が変動してしまう
。したがって、分光感度はフラットであることが望まし
い。When the same wavelength is received under the same conditions, there is no problem even if the spectral sensitivity varies depending on the wavelength. However, if the temperature of the light-receiving element changes, for example, the characteristics shift in the wavelength direction, and the light-receiving output changes even if the incident light intensity remains the same. Therefore, it is desirable that the spectral sensitivity is flat.
第二の問題点は、ＩｎＰは波長約１μｍ以下における吸
収係数が大きく、ＩｎＰキャップ層による入射光の吸収
が生じて分光感度が低下することである。The second problem is that InP has a large absorption coefficient at wavelengths of about 1 μm or less, and the InP cap layer absorbs incident light, resulting in a decrease in spectral sensitivity.
これを解決するには、ＩｎＰキャーツブ層を薄くすれば
よい。しかし、ＩｎＰキャップ層を薄くすると、電極形
成時の熱処理（シンタリング〉による電極金属の拡散が
生じ、その後の経時変化により素子の信頼性が低下する
などの問題が生じる。To solve this problem, the InP cathode layer can be made thinner. However, if the InP cap layer is made thin, problems arise such as diffusion of the electrode metal due to heat treatment (sintering) during electrode formation, and subsequent deterioration over time, resulting in decreased reliability of the device.
本発明は、以上の課題を解決し、■−Ｖ族半導体結晶の
へテロ接合を用いた受光素子の電極形成時の信頼性を損
なうことなく、受光波長帯域が広く平坦な分光感度特性
をもつ受光素子を提供することを目的とする。The present invention solves the above problems and has flat spectral sensitivity characteristics with a wide receiving wavelength band without impairing reliability during electrode formation of a light receiving element using a heterojunction of a -V group semiconductor crystal. The purpose is to provide a light receiving element.
本発明の受光素子は、キャップ層の受光領域が電極の形
成された領域に比較して薄く形成されたことを特徴とす
る。The light-receiving element of the present invention is characterized in that the light-receiving region of the cap layer is formed thinner than the region where the electrodes are formed.
キャリアの表面再結合の影響が大きくなって分光感度が
低下し′ない程度にキャップ層を薄くすることにより、
分光感度特性が平坦となり、しかも波長約１μｍ以下に
おける分光感度の低下を抑えることができる。また、電
極が形成される領域については厚くし、電極金属の拡散
の影響が受光素子の接合部に達しないようにする。By making the cap layer thin enough to prevent the spectral sensitivity from decreasing due to the influence of surface recombination of carriers,
The spectral sensitivity characteristics become flat, and furthermore, a decrease in spectral sensitivity at wavelengths of about 1 μm or less can be suppressed. Furthermore, the region where the electrode is formed is made thicker so that the influence of diffusion of the electrode metal does not reach the junction of the light receiving element.
第１図は本発明第一実施例受光素子の断面図を示す。 FIG. 1 shows a sectional view of a light receiving element according to a first embodiment of the present invention.
この受光素子は、入射光を吸収して電気信号に変換する
ｎ−形Ｇａ１ｎＡｓ光吸収層３と、この光吸収層３の入
射側に設けられたｎ形１ｎＰキャップ層４および反射防
止膜と、キャップ層４に接して形成されたｐ゛側電極６
とを備え、キャップ層４は光吸収Ｎ３よりバンドギャッ
プの大きい材料で形成される。This light receiving element includes an n-type Ga1nAs light absorption layer 3 that absorbs incident light and converts it into an electrical signal, an n-type 1nP cap layer 4 and an antireflection film provided on the incident side of this light absorption layer 3, P' side electrode 6 formed in contact with cap layer 4
The cap layer 4 is formed of a material having a larger band gap than the light absorbing material N3.
光吸収層３は、ｎ゛形１ｎＰ基板１上に、ＩｎＰバッフ
ァ層２を介して形成される。キャップ層４から光吸収層
３にかけては、Ｚｎ拡散によりｐ＋領域５が形成される
。基板１の裏面にはｎ゛側電極７が設けられる。反射防
止膜としては、ＳＩ３Ｎ４膜８および５Ｉ０２膜９の二
層構造を用いる。The light absorption layer 3 is formed on the n-type 1nP substrate 1 with an InP buffer layer 2 interposed therebetween. A p+ region 5 is formed from the cap layer 4 to the light absorption layer 3 by Zn diffusion. An n'-side electrode 7 is provided on the back surface of the substrate 1. As the antireflection film, a two-layer structure of SI3N4 film 8 and 5I02 film 9 is used.
ここで本実施例の特徴とするところは、キャップ層４の
厚さに変化が設けられ、受光領域が電極６の形成された
領域（以下「電極形成領域」という）に比較して薄く形
成されたことにある。受光領域の厚さは、例えば０．１
μｍ以下にするー。また、電極形成領域の厚さは、例え
ば１μｍ以上にする。Here, the feature of this embodiment is that the thickness of the cap layer 4 is varied, and the light receiving area is formed thinner than the area where the electrode 6 is formed (hereinafter referred to as "electrode formation area"). That's true. The thickness of the light receiving area is, for example, 0.1
Make it less than μm. Further, the thickness of the electrode formation region is, for example, 1 μm or more.
第２図は入射光波長に対する透過率の計算値の一例を示
す。破線はＳｉ３Ｎ４膜８および５ｉ０２膜９からなる
反射防止膜の透過率を示し、四つの実線はキャップ層４
を透過して光吸収層３に達する透過率を示す。FIG. 2 shows an example of calculated values of transmittance with respect to the wavelength of incident light. The broken line shows the transmittance of the antireflection film made of the Si3N4 film 8 and the 5i02 film 9, and the four solid lines show the transmittance of the cap layer 4.
It shows the transmittance that passes through and reaches the light absorption layer 3.
この例では、反射防止膜の反射率が波長１．５μｍの入
射光に対して最小となるように、Ｓｉ、Ｎ、膜８の厚さ
を０．１３μｍ、 ５Ｉ０２膜９の厚さを０．ｌｈｍと
した。In this example, the thickness of the Si, N, and film 8 is 0.13 μm, and the thickness of the 5I02 film 9 is 0.1 μm, so that the reflectance of the antireflection film is the minimum for incident light with a wavelength of 1.5 μm. lhm.
反射防止膜を透過した入射光は、０．９μｍ以上の波長
の光に対して透明なＩｎＰのキャップ層４を通って、光
吸収層３に導入される。このとき、キャップＮ４でも光
の干渉が生じ、光吸収層３への透過率が変化する。第２
図には、キャップ層４の膜厚が０．０５μｍ、 ０．１
μｍ、０．５．ｃｃ＋＋＋および１μｍの場合につい
て、光吸収層３への透過率を示した。図示したように、
キャップ層４の膜厚が増加するにつれて、透過率が大き
く変動するようになる。特にキャップ層４の膜厚が１μ
ｍを越える場合には、素子の分光感度波長帯域で透過率
が大きく変化することになる。これに対して膜厚を０．
５μｍ以下に薄くした場合には、透過率の変化が小さく
緩やかになる。The incident light that has passed through the antireflection film is introduced into the light absorption layer 3 through the InP cap layer 4, which is transparent to light with a wavelength of 0.9 μm or more. At this time, light interference also occurs in the cap N4, and the transmittance to the light absorption layer 3 changes. Second
In the figure, the film thickness of the cap layer 4 is 0.05 μm and 0.1 μm.
μm, 0.5. The transmittance to the light absorption layer 3 is shown for the case of cc+++ and 1 μm. As shown,
As the thickness of the cap layer 4 increases, the transmittance varies greatly. In particular, the film thickness of cap layer 4 is 1μ
If it exceeds m, the transmittance will change significantly in the spectral sensitivity wavelength band of the element. In contrast, the film thickness was set to 0.
When the thickness is reduced to 5 μm or less, the change in transmittance becomes small and gradual.
第３図はキャップ層４の膜厚を変化させたときの分光感
度特性の計算値を示す。横軸は波長であり、縦軸は外部
量子効率を示す。FIG. 3 shows calculated values of the spectral sensitivity characteristics when the film thickness of the cap layer 4 is changed. The horizontal axis represents wavelength, and the vertical axis represents external quantum efficiency.
キャップ層４を薄くすると光吸収も小さくなり、光吸収
層３に達する波長０．９μｍ以下の光が増加する。これ
により、分光感度波長領域が短波長側にも拡張される。When the cap layer 4 is made thinner, the light absorption also becomes smaller, and the amount of light having a wavelength of 0.9 μm or less that reaches the light absorption layer 3 increases. This expands the spectral sensitivity wavelength range to the shorter wavelength side.
キャップ層４の電極形成領域は、電極形成時のシンタリ
ングその他の熱処理によって電極金属が拡散しても接合
に達しないように、受光領域より厚くなっている。これ
により、従来の素子と同等の信頼性を保つことができる
。The electrode formation region of the cap layer 4 is thicker than the light receiving region so that even if the electrode metal is diffused due to sintering or other heat treatment during electrode formation, it will not reach the junction. Thereby, reliability equivalent to that of conventional elements can be maintained.
本実施例の素子を製造するには、例えばキャップ層４を
選択的にエツチングして薄くしてもよく、電極形成領域
のみを選択的にエピタキシャル成長させてもよい。To manufacture the device of this embodiment, for example, the cap layer 4 may be selectively etched to make it thinner, or only the electrode formation region may be selectively grown epitaxially.
第４図は本発明第二実施例受光素子の断面図を示す。FIG. 4 shows a sectional view of a light receiving element according to a second embodiment of the present invention.
この実施例は、キャップ層４と電極６との間に、接触抵
抗を小さくするためのＧａｌｎＡｓ層１０が形成された
ことが第一実施例と異なる。このＧａＩｎＡｓ層１０は
電極のオーム性接合の抵抗を下げる効果があり、電極形
成領域だけに設けられ、受光領域には設けられていない
。この実施例の場合にも、電極形成領域が受光領域より
厚く形成される。This embodiment differs from the first embodiment in that a GalnAs layer 10 is formed between the cap layer 4 and the electrode 6 to reduce contact resistance. This GaInAs layer 10 has the effect of lowering the resistance of the ohmic junction of the electrode, and is provided only in the electrode formation region and not in the light receiving region. Also in this embodiment, the electrode forming area is formed thicker than the light receiving area.
以上の実施例では、反射防止膜としてＳｉ、Ｎ、膜と５
ｉｎ２膜との二層構造を用いた例を示したが、他の膜、
例えばＳｉ３Ｎ４の単層膜を用いた場合でも本発明を同
様に実施できる。In the above embodiments, the antireflection film includes Si, N, and 5
Although we have shown an example using a two-layer structure with in2 membrane, other membranes,
For example, the present invention can be implemented in the same way even when a single layer film of Si3N4 is used.
以上説明したように、本発明の受光素子は、受光領域の
ＩｎＰキャップ層の厚さを電極形成領域より薄くするこ
とにより、電極形成の信頼性を損ねることなく分光感度
特性を改善できる効果がある。As explained above, the light-receiving element of the present invention has the effect of improving the spectral sensitivity characteristics without impairing the reliability of electrode formation by making the thickness of the InP cap layer in the light-receiving region thinner than in the electrode formation region. .
また、本発明の受光素子は、従来の素子に比較して受光
領域の選択的エツチングまたは電極形成領域の選択的エ
ピタキシャル成長が必要となるが、素子の製造は容易で
ある。Further, although the light receiving element of the present invention requires selective etching of the light receiving region or selective epitaxial growth of the electrode forming region compared to conventional elements, the device is easy to manufacture.
第１図は本発明第一実施例受光素子の断面図。
第２図は入射光波長に対する透過率の計算値の一例を示
す図。
第３図はキャップ層の膜厚を変化させたときの分光感度
特性の計算値を示す図。
第４図は本発明第二実施例受光素子の断面図。
第５図は従来例受光素子の断面図を示す。
第６図はこの受光素子の分光感度特性の理論計算値を示
す図。
第７図は反射防止膜の透過率対波長特性を示す図。
第８図はキャップ層がある場合の分光感度特性の一例を
示す図。
１・・・基板、２・・・バッファ層、３・・・光吸収層
、４・・・キャップ層、５・・・ｐ゛領域６．７・・・
電極、８・Ｓｉ、Ｎ、膜、９−５ｉＯ□膜、１Ｏ−Ｇａ
ＴｎＡｓ層。FIG. 1 is a sectional view of a light receiving element according to a first embodiment of the present invention. FIG. 2 is a diagram showing an example of calculated values of transmittance with respect to the wavelength of incident light. FIG. 3 is a diagram showing calculated values of spectral sensitivity characteristics when changing the film thickness of the cap layer. FIG. 4 is a sectional view of a light receiving element according to a second embodiment of the present invention. FIG. 5 shows a cross-sectional view of a conventional light receiving element. FIG. 6 is a diagram showing theoretically calculated values of the spectral sensitivity characteristics of this light receiving element. FIG. 7 is a diagram showing the transmittance versus wavelength characteristics of an antireflection film. FIG. 8 is a diagram showing an example of spectral sensitivity characteristics when there is a cap layer. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Buffer layer, 3...Light absorption layer, 4...Cap layer, 5...p' region 6.7...
Electrode, 8.Si, N, film, 9-5iO□ film, 1O-Ga
TnAs layer.
Claims (1)
射防止膜と、 前記キャップ層に接して形成された電極と を備え、 上記キャップ層は上記光吸収層よりバンドギャップの大
きい材料で形成された 受光素子において、 上記キャップ層の受光領域が電極の形成された領域に比
較して薄く形成された ことを特徴とする受光素子。[Scope of Claims] 1. A light absorption layer that absorbs incident light and converts it into an electrical signal; a cap layer and an antireflection film provided on the incident side of the light absorption layer; and formed in contact with the cap layer. and a light-receiving element in which the cap layer is formed of a material having a larger band gap than the light-absorbing layer, and the light-receiving area of the cap layer is formed thinner than the area in which the electrode is formed. A light receiving element characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1325660A JP2844097B2 (en) | 1989-12-14 | 1989-12-14 | Light receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1325660A JP2844097B2 (en) | 1989-12-14 | 1989-12-14 | Light receiving element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03185771A true JPH03185771A (en) | 1991-08-13 |
| JP2844097B2 JP2844097B2 (en) | 1999-01-06 |
Family
ID=18179297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1325660A Expired - Fee Related JP2844097B2 (en) | 1989-12-14 | 1989-12-14 | Light receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2844097B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100636093B1 (en) * | 1999-07-12 | 2006-10-19 | 삼성전자주식회사 | Photo-detector device and method manufacturing thereof |
| JP2010056147A (en) * | 2008-08-26 | 2010-03-11 | Hamamatsu Photonics Kk | Semiconductor light receiving element |
| JP2013518414A (en) * | 2010-01-21 | 2013-05-20 | ローパー サイエンティフィック インコーポレイテッド | Solid backside illuminated photon sensor and method for manufacturing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62254473A (en) * | 1986-04-28 | 1987-11-06 | Sumitomo Electric Ind Ltd | Iii-v multi-element compound semiconductor pin photo diode |
| JPS63227053A (en) * | 1987-03-17 | 1988-09-21 | Matsushita Electric Ind Co Ltd | Semiconductor photodetector |
-
1989
- 1989-12-14 JP JP1325660A patent/JP2844097B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62254473A (en) * | 1986-04-28 | 1987-11-06 | Sumitomo Electric Ind Ltd | Iii-v multi-element compound semiconductor pin photo diode |
| JPS63227053A (en) * | 1987-03-17 | 1988-09-21 | Matsushita Electric Ind Co Ltd | Semiconductor photodetector |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100636093B1 (en) * | 1999-07-12 | 2006-10-19 | 삼성전자주식회사 | Photo-detector device and method manufacturing thereof |
| JP2010056147A (en) * | 2008-08-26 | 2010-03-11 | Hamamatsu Photonics Kk | Semiconductor light receiving element |
| JP2013518414A (en) * | 2010-01-21 | 2013-05-20 | ローパー サイエンティフィック インコーポレイテッド | Solid backside illuminated photon sensor and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2844097B2 (en) | 1999-01-06 |
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