JPH03167862A - Package for semiconductor-element - Google Patents
Package for semiconductor-elementInfo
- Publication number
- JPH03167862A JPH03167862A JP30861189A JP30861189A JPH03167862A JP H03167862 A JPH03167862 A JP H03167862A JP 30861189 A JP30861189 A JP 30861189A JP 30861189 A JP30861189 A JP 30861189A JP H03167862 A JPH03167862 A JP H03167862A
- Authority
- JP
- Japan
- Prior art keywords
- external lead
- lead terminal
- glass
- lid
- insulating base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 239000011521 glass Substances 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000005291 magnetic effect Effects 0.000 claims abstract description 9
- 230000035699 permeability Effects 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 7
- 229910052839 forsterite Inorganic materials 0.000 claims abstract description 7
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000011734 sodium Substances 0.000 claims abstract description 7
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910000464 lead oxide Inorganic materials 0.000 claims abstract description 4
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052700 potassium Inorganic materials 0.000 claims abstract 2
- 239000011591 potassium Substances 0.000 claims abstract 2
- 238000003860 storage Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- 239000004020 conductor Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 230000007774 longterm Effects 0.000 abstract 1
- 239000005394 sealing glass Substances 0.000 description 18
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical class [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 5
- 229910001950 potassium oxide Inorganic materials 0.000 description 5
- 229910001948 sodium oxide Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910000833 kovar Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000004859 Copal Substances 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 241000782205 Guibourtia conjugata Species 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 241001313637 Isotria Species 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- XRCKXJLUPOKIPF-UHFFFAOYSA-N plumbane Chemical compound [PbH4] XRCKXJLUPOKIPF-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体素子を収容する半導体素子収納用パッケ
ージの改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a semiconductor element housing package that houses a semiconductor element.
（従来の技術）
従来、半導体素子を収容するためのパソケージ、特に、
ガラスの溶着によって封止するガラス封止型半導体素子
収納用パッケージは、絶縁基体と蓋体とから成り、内部
に半導体素子を収容する空所を有する絶縁容器と、該容
器内に収容される半導体素子を外部電気回路に電気的に
接続するための外部リード端子とから構威されており、
絶縁基体及び蓋体の相対向する主面に予め封止用のガラ
ス部材を被着形戒すると共に、絶縁基体主面に外部リー
ド端子を固定し、半導体素子の各電極と外部リード端子
とをワイヤボンド接続した後、絶縁基体及び蓋体のそれ
ぞに被着させた封止用のガラス部材を溶融一体化させる
ことによって内部に半導体素子を気密に封止している。(Prior Art) Conventionally, a path cage for accommodating a semiconductor device, in particular,
A glass-sealed semiconductor device storage package that is sealed by glass welding consists of an insulating base and a lid, an insulating container having a cavity for accommodating a semiconductor device, and a semiconductor device accommodated in the container. It consists of an external lead terminal for electrically connecting the element to an external electric circuit,
A glass member for sealing is previously attached to the opposing main surfaces of the insulating base and the lid, and external lead terminals are fixed to the main surfaces of the insulating base, and each electrode of the semiconductor element and the external lead terminal are connected to each other. After wire bonding, the semiconductor element is hermetically sealed inside by melting and integrating sealing glass members attached to the insulating base and the lid, respectively.
（発明が解決しようとする課題）
しかし彊ら、この従来のガラス封止型半導体素子収納用
パソケージは通常、外部リード端子がコパール（２９
ＷｔχＮｉ−１６ ＷｔχＣｏ−５５ ＷＬχＦｅ合金
）や４２＾１１ｏｙ（４２ ＷｔχＮｉ−５８ ＷｔＸ
Ｆｅ合金）の導電性材料から成っており、該コバール
や４２Ａ１１ｏｙ等は透磁率が高いことから以下に述べ
る欠点を有する。(Problem to be Solved by the Invention) However, this conventional glass-sealed type PC cage for storing semiconductor devices usually has external lead terminals of copal (29 mm).
WtχNi-16 WtχCo-55 WLχFe alloy) and 42^11oy (42 WtχNi-58 WtX
Kovar, 42A11oy, etc. have high magnetic permeability and therefore have the following disadvantages.
即ち、コバールや４２Ａ１１ｏｙは鉄（Ｆｅ）、ニッケ
ル（Ｎｉ）、コバルト（ｃｏ）といった強磁性体金属の
みから戒っており、その透磁率は２５０〜７００ （Ｃ
ＧＳ）と高い。そのためこのコバールや４２Ａ１］ｏｙ
等から戒る外部リード端子に電流が流れると外部リード
端子中にｉ３ｍ率に比例した大きな自己インダクタンス
が発生し、これが逆起電力を講発してノイズとなると共
に、該ノイズが半導体素子に入力されて半導体素子に誤
動作を生しさせるという欠点を有していた。In other words, Kovar and 42A11oy are prohibited only from ferromagnetic metals such as iron (Fe), nickel (Ni), and cobalt (co), and their magnetic permeability is 250 to 700 (C
GS) and high. Therefore, this Kovar and 42A1]oy
When current flows through the external lead terminal, a large self-inductance proportional to the i3m ratio is generated in the external lead terminal, which generates back electromotive force and becomes noise, and the noise is input to the semiconductor element. This has the drawback of causing malfunctions in semiconductor devices.
（発明の目的）
本発明は上記欠点に鑑み案出されたもので、その目的は
外部リード端子で発生するノイズを極小となし、内部に
収容する半導体素子への信号の人出力を確実に行うこと
を可能として半導体素子を長期間にわたり正常、且つ安
定に作動させることができる半導体素子収納用パソケー
ジを提供することにある。(Object of the Invention) The present invention was devised in view of the above-mentioned drawbacks, and its purpose is to minimize the noise generated by the external lead terminals and ensure the output of signals to the semiconductor elements housed inside. It is an object of the present invention to provide a path cage for storing a semiconductor element, which allows the semiconductor element to operate normally and stably for a long period of time.
（課題を解決するための手段）
本発明は内部に半導体素子を収容するための空所を有す
る絶縁容器に外部リード端子をガラス部材を介して取着
して成る半導体素子収納用パッケージにおいて、前記絶
縁容器をフォルステライト質焼結体もしくはジルコニア
質焼結体で、外部リード端子を透磁率１５０ （ＣＧＳ
）以下、熱膨張係数９５乃至１１０ ｘｌＯ−’／ ’
ｃの金属で、ガラス部材をシリカ３０．０乃至６０．０
Ｗｔχ、酸化鉛２０．０乃至４０．０れχ、ナトリウム
、カリウムの酸化物の少なくとも１種１０．０乃至２０
．０Ｗｔχから戒るガラスで形成したことを特徴とする
ものである。(Means for Solving the Problems) The present invention provides a package for storing a semiconductor element, which is formed by attaching an external lead terminal to an insulating container having a cavity for accommodating a semiconductor element through a glass member. The insulating container is made of forsterite sintered body or zirconia sintered body, and the external lead terminal is made of magnetic permeability 150 (CGS
) Below, the thermal expansion coefficient is 95 to 110 xlO-'/'
c metal, and the glass member is silica 30.0 to 60.0
Wtχ, lead oxide 20.0 to 40.0, χ, at least one of sodium and potassium oxides 10.0 to 20
．． It is characterized in that it is made of glass that is rated at 0Wtχ.
（実施例） 次に本発明を添付図面に基づき詳細に説明する。(Example) Next, the present invention will be explained in detail based on the accompanying drawings.
第１図及び第２図は本発明の半導体素子収納用バ・ノケ
ージの一実施例を示し、１は絶縁基体、２は流体である
。この絶８！基体１と蓋体２とにより絶縁容器３が構威
される。FIGS. 1 and 2 show an embodiment of a bar cage for storing semiconductor elements according to the present invention, where 1 is an insulating base and 2 is a fluid. This absolute 8! The base 1 and the lid 2 constitute an insulating container 3.
前記絶縁基体１及び蓋体２はそれぞれの中央部に半導体
素子を収容する空所を形成するための凹部が設けてあり
、絶縁基体１の凹部底面６こは半導体素子４が樹脂、ガ
ラス、ロウ剤等の接着剤を介し取着固定される。The insulating base 1 and the lid 2 are each provided with a recess in the center thereof to form a cavity for accommodating the semiconductor element, and the bottom surface 6 of the recess of the insulating base 1 is a place where the semiconductor element 4 is made of resin, glass, or wax. It is attached and fixed using an adhesive such as an adhesive.
前記絶縁基体１及び蓋体２はフォルステライト質焼結体
もしくはジルコニア質焼結体から戒り、第１図に示すよ
うな絶縁基体１及び蓋体２に対応した形状を有するプレ
ス型内に、フォルステライト質焼結体の場合はマグネシ
ア（ ＭｇＯ ） 、シリカ（ＳｉＯｚ）等の原料粉末
を、ジルコニア質焼結体の場合は酸化ジルコニウム（Ｚ
ｒＯｚ）、イソトリア（ｙｚｏ３）等の原料粉末を充填
させるとともに一定圧力を印加して威形し、しかる後、
成形品を約１２００〜１５００゜Ｃの温度で焼成するこ
とによって製作される。The insulating base 1 and lid 2 are made of a forsterite sintered body or a zirconia sintered body, and are placed in a press mold having a shape corresponding to the insulating base 1 and lid 2 as shown in FIG. In the case of a forsterite sintered body, raw material powders such as magnesia (MgO) and silica (SiOz) are used, and in the case of a zirconia sintered body, zirconium oxide (Z) is used.
Filled with raw material powder such as rOz), isotria (yzo3), etc., and shaped by applying a constant pressure, and then
It is manufactured by firing a molded article at a temperature of about 1200-1500°C.
尚、前記絶縁基体ｌ及び蓋体２を形成するフォルステラ
イト質焼結体もしくはジルコニア質焼結体はその熱膨張
係数が１００乃至１１０ ｘｌＯ−’／ ”ｃであり、
後述する封止用ガラス部材の熱膨張係数との関係におい
て絶縁基体１及び蓋体２と封止用ガラス部材間に大きな
熱膨張の差が生しることはない。The forsterite sintered body or the zirconia sintered body forming the insulating base 1 and the lid 2 have a thermal expansion coefficient of 100 to 110 xlO-'/''c,
In relation to the coefficient of thermal expansion of the sealing glass member, which will be described later, there is no large difference in thermal expansion between the insulating base 1 and the lid 2 and the sealing glass member.
また前記絶縁基体１及び蓋体２にはその相対向する主面
に封止用のガラス部材６が予め被着形或されており、該
絶縁基体１及び蓋体２の各々に被着されている封止用ガ
ラス部材６を加熱溶融させ一体化させることにより絶縁
容器３内の半導体素子４を気密に封止する。Furthermore, a sealing glass member 6 is attached in advance to the main surfaces of the insulating base 1 and the lid 2 that face each other, and is attached to each of the insulating base 1 and the lid 2. The semiconductor element 4 inside the insulating container 3 is hermetically sealed by heating and melting the sealing glass member 6 to be integrated.
前記絶縁基体１及び蓋体２の相対向する主面に被着され
る封止用ガラス部材６は、シリカ３０．０乃至６０．Ｏ
Ｗｔχ、酸化鉛２０．０乃至４０．０Ｗｔχ、ナトリウ
ム、カリウムの酸化物の少なくとも１種１０．０乃至２
０．０Ｗｔ！より形成されるガラスから成り、上記各或
分を所定の値となるように秤量混合すると共に、該混合
粉末を１３００〜１４００℃の温度で加熱溶融させるこ
とによって製作される。このガラス部材６の熱膨張係数
は１００乃至１１０ ｘｌＯ−７／ ”ｃである。The sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2 is made of silica 30.0 to 60. O
Wtχ, lead oxide 20.0 to 40.0Wtχ, at least one of sodium and potassium oxides 10.0 to 2
0.0Wt! It is manufactured by weighing and mixing each of the above-mentioned portions to a predetermined value, and heating and melting the mixed powder at a temperature of 1300 to 1400°C. The coefficient of thermal expansion of this glass member 6 is 100 to 110 xlO-7/''c.
前記封止用ガラス部材６ば、その熱膨張係数が１００
−１１０ ｘｌＬ’／ ”ｃであり、絶縁基体１及び蓋
体２の各々の，熱膨張係数と近似することから絶縁基体
１及び蓋体２の各々に被着されている封止用ガラス部材
６を加熱溶融させ一体化させることに？り絶縁容器３内
の半導体素子４を気密に封止する際、絶縁基体ｌ及び蓋
体２と封止用ガラス部材６との間には両者の熱膨張係数
の相違に起因する熱応力が発生することは殆どなく、絶
縁基体ｌと蓋体２とを封止用ガラス部材６を介し強固に
接合することが可能となる。The sealing glass member 6 has a thermal expansion coefficient of 100.
−110 When the semiconductor element 4 in the insulating container 3 is hermetically sealed by heating and melting and integrating them, there is a gap between the insulating base l and the lid 2 and the sealing glass member 6 due to thermal expansion between them. There is almost no thermal stress caused by the difference in coefficients, and it becomes possible to firmly join the insulating base 1 and the lid 2 via the sealing glass member 6.
尚、前記封止用ガラス部材６はシリカ（ＳｉＯ■）が３
０．０Ｗｔ！未満であるとガラスの結晶化が進んで絶縁
容器３の気密封止が困難となり、また６０．ＯＷｔχを
越えるとガラスの熱膨張が小さくなって絶縁基体ｌと蓋
体２の熱膨張と合わなくなることからシリカ（ＳｉＯ■
）は３０．０乃至６０．０匈ｔＸの範囲に限定される。Incidentally, the sealing glass member 6 contains silica (SiO■).
0.0Wt! If it is less than 60.0, crystallization of the glass will progress and it will be difficult to hermetically seal the insulating container 3. If OWtχ is exceeded, the thermal expansion of the glass becomes small and does not match the thermal expansion of the insulating base 1 and the lid 2, so silica (SiO
) is limited to a range of 30.0 to 60.0 tX.
また酸化鉛（ＰｂＯ）が２０．０Ｗｔ％未満であるとガ
ラスの熱膨張が小さくなって絶縁基体１と蓋体２の熱膨
張と合わなくなり、また４０．０Ｗｔ％を越えるとガラ
スの結晶化が進んで絶縁容器３の気密封止が困難となる
ことから酸化鉛（ＰｂＯ）は２０．０乃至４０．０Ｗｔ
％の範囲に限定される。If the lead oxide (PbO) content is less than 20.0 Wt%, the thermal expansion of the glass will be too small to match the thermal expansion of the insulating base 1 and the lid 2, and if it exceeds 40.0 Wt%, the glass will crystallize. Lead oxide (PbO) is 20.0 to 40.0 Wt because it becomes difficult to hermetically seal the insulating container 3.
% range.
またナトリウム、カリウムの酸化物が１０．０Ｗｔ％未
満であるとガラスを製作する際のガラスの溶融温度が大
幅に上がって作業性が著しく悪くなり、また２０．０Ｗ
ｔ％を越えるとガラスの耐薬品性が劣化して絶縁容器３
の気密封止の信頼性が大きく低下するためナトリウム、
カリウムの酸化物は１０．０乃至２０．０Ｗｔ％の範囲
に限定される。In addition, if the content of sodium and potassium oxides is less than 10.0 Wt%, the melting temperature of the glass during glass production will rise significantly, resulting in extremely poor workability;
If it exceeds t%, the chemical resistance of the glass will deteriorate and the insulation container 3
Sodium, as the reliability of hermetic sealing is greatly reduced.
Potassium oxide is limited to a range of 10.0 to 20.0 wt%.
前記封止用ガラス部材６は荊述した戒分から成るガラス
に適当な有機溶剤、溶媒を添加して得たガラスペースト
を従来周知の厚膜手法を採用することによって絶縁基体
ｌ及び蓋体２の相対向する主面に被着形成される。The sealing glass member 6 is made by applying a well-known thick film method to a glass paste obtained by adding a suitable organic solvent to glass made of the above-mentioned precepts, and then forming the insulating base l and the lid body 2. Adhesively formed on opposing main surfaces.
前記絶縁基体１と蓋体２との間には導電性材料から成る
外部リード端子５が配されており、該外部リード端子５
は半導体素子４の各電極がワイヤ７を介し電気的に接続
され、外部リード端子５を外部電気回路に接続すること
によって半導体素子４が外部電気回路に接続されること
となる。An external lead terminal 5 made of a conductive material is disposed between the insulating base 1 and the lid 2.
Each electrode of the semiconductor element 4 is electrically connected via the wire 7, and the semiconductor element 4 is connected to the external electric circuit by connecting the external lead terminal 5 to the external electric circuit.
前記外部リード端子５は絶縁基体１と蓋体２の相対向す
る主面に被着させた封止用ガラス部材６を溶融一体化さ
せ、絶縁容器３を気密封止する際に同時に絶縁基体ｌと
蓋体２との間に取着される．前記外部リード端子５はク
ロムー鉄合金（１７．５乃至１８．５ＷｔＸ Ｃｒ−８
１．５乃至８２．５１ＨχＦｅ合金）等から威り、その
透磁率は１５０ （ＣＧＳ）以下、熱膨張係数は９５乃
至１１０×１０−’／ ”Ｃの導電性材料から戒る。The external lead terminal 5 is formed by melting and integrating the sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2, and simultaneously sealing the insulating base l when the insulating container 3 is hermetically sealed. and lid body 2. The external lead terminal 5 is made of chromium-iron alloy (17.5 to 18.5WtX Cr-8
1.5 to 82.51HxFe alloy), etc., and its magnetic permeability is 150 (CGS) or less, and the thermal expansion coefficient is 95 to 110 x 10-'/''C.
前記外部リード端子５はその透磁率が１５０（ＣＧＳ）
以下であり、透磁率が低いことから外部リード端子５に
電流が流れたとしても外部リード端子５中には大きな自
己インダクタンスが発生することはなく、その結果、前
記自己インダクタンスにより誘発される逆起電力に起因
したノイズを極小となし、内部に収容する半導体素子４
を常に正常に作動させることができる。The external lead terminal 5 has a magnetic permeability of 150 (CGS).
Since the magnetic permeability is low, even if a current flows through the external lead terminal 5, a large self-inductance is not generated in the external lead terminal 5, and as a result, the back electromotive force induced by the self-inductance is Semiconductor element 4 that minimizes noise caused by electric power and houses it inside.
can always operate normally.
また前記外部リード端子５はその熱膨張係数が９５乃至
１１０ ×１０−’／ ”Ｃであり、封止用ガラス部材
６の熱膨張係数と近似することから外部リード端子５を
絶縁基体１と蓋体２の間に封止用ガラス部材６を用いて
固定する際、外部リード端子５と封止用ガラス部材６と
の間には両者の熱膨張係数の相違に起因する熱応力が発
生することはなく、外部リード端子５を封止用ガラス部
材６で強固に固定することも可能となる。Further, the external lead terminal 5 has a thermal expansion coefficient of 95 to 110 × 10-'/''C, which is similar to the thermal expansion coefficient of the sealing glass member 6. When fixing between the body 2 using the sealing glass member 6, thermal stress is generated between the external lead terminal 5 and the sealing glass member 6 due to the difference in coefficient of thermal expansion between the two. Instead, it is also possible to firmly fix the external lead terminal 5 with the sealing glass member 6.
かくして、この半導体素子収納用パッケージによれば絶
縁基体１の凹部底面に半導体素子４を取着固定するとと
もに該半導体素子４の各電極をボンディングワイヤ７に
より外部リード端子５に接続させ、しかる後、絶縁基体
ｌと蓋体２とを該絶縁基体１及び蓋体２の相対向する主
面に予め被着させておいた封止用ガラス部材６を溶融一
体化させることによって接合させ、これによって最終製
品としての半導体装置が完戊する。Thus, according to this semiconductor element storage package, the semiconductor element 4 is attached and fixed to the bottom surface of the recess of the insulating substrate 1, and each electrode of the semiconductor element 4 is connected to the external lead terminal 5 by the bonding wire 7, and then, The insulating base 1 and the lid 2 are joined together by melting and integrating the sealing glass member 6 that has been previously attached to the opposing main surfaces of the insulating base 1 and the lid 2, and thereby the final Semiconductor devices as products are completed.
（発明の効果〉
本発明の半導体素子収納用パンヶージによれば、半導体
素子を収容するための絶縁容器をフォルステライト質焼
結体もしくはジルコニア質焼結体テ、外部リード端子を
透磁率が１５０ （ＣＧＳ）以下、熱膨張係数が９５乃
至１１０ ×１０−’／ ”ｃの金属で、ガラス部祠を
シリカ３０．０乃至６０．０Ｗｔ％ 、Ｈ化鉛２０．０
乃至４０．０ＷｔＸ ，ナトリウム、カリウムの酸化物
の少なくとも１種１０，０乃至２０．ＯＷｔχから成る
ガラスで形成したことから外部リード端子に電流を流し
たとしても該外部リード端子中に大きな自己インダクタ
ンスが発生することはなく、その結果、前記自己インダ
クタンスにより誘発される逆起電力に起因したノイズを
極小となし、内部に収容する半導体素子を常に正常に作
動させることが可能となる。(Effects of the Invention) According to the semiconductor device storage pan cage of the present invention, the insulating container for accommodating the semiconductor device is made of a forsterite sintered body or a zirconia sintered body, and the external lead terminal is made of a magnetic permeability of 150 ( (CGS) Below, the glass part is made of metal with a coefficient of thermal expansion of 95 to 110 x 10-'/''c, and the glass part is made of 30.0 to 60.0 wt% silica and 20.0 wt% lead hydride.
40.0 WtX, at least one of sodium and potassium oxides 10.0 to 20.0 WtX. Since it is made of glass made of OWtχ, even if a current is passed through the external lead terminal, a large self-inductance is not generated in the external lead terminal, and as a result, a large self-inductance is not generated in the external lead terminal due to the back electromotive force induced by the self-inductance. This makes it possible to minimize the generated noise and to always operate the semiconductor elements housed inside normally.
また外部リード端子はその熱膨張係数が絶縁基体、蓋体
及び封止用ガラス部材の各々の熱膨張係数と近似し、絶
縁基体と蓋体との間に外部リード端子を挟み、各々を封
止用ガラス部材で取着接合したとしても絶縁基体及び蓋
体と封止用ガラス部材との間、外部リード端子と封止用
ガラス部材との間のいずれにも熱膨張係数の相違に起因
する熱応力は発生せず、すべてを強固に取着接合するこ
とも可能となる。In addition, the coefficient of thermal expansion of the external lead terminal is close to that of each of the insulating base, the lid, and the sealing glass member, and the external lead terminal is sandwiched between the insulating base and the lid, and each is sealed. Even if they are attached and bonded using a glass material for sealing, heat due to differences in thermal expansion coefficients will be generated between the insulating base and lid and the glass sealing member, and between the external lead terminal and the glass sealing member. No stress is generated, and everything can be firmly attached and joined.
第１図は本発明の半導体素子収納用パッケージの一実施
例を示す断面図、第２図は第１図に示すパッケージの絶
縁基体上面より見た平面図である。
１ ・・絶縁基体 ２ ・・蓋体
・絶縁容器
・外部リード端子
・封止用ガラス部材FIG. 1 is a sectional view showing an embodiment of the semiconductor element storage package of the present invention, and FIG. 2 is a plan view of the package shown in FIG. 1, viewed from the top surface of the insulating base. 1...Insulating base 2...Lid, insulating container, external lead terminal, glass member for sealing
Claims (1)
容器に外部リード端子をガラス部材を介して取着して成
る半導体素子収納用パッケージにおいて、前記絶縁容器
をフォルステライト質焼結体もしくはジルコニア質焼結
体で、外部リード端子を透磁率１５０（ＣＧＳ）以下、
熱膨張係数９５乃至１１０×１０＾−＾７／℃の金属で
、ガラス部材をシリカ３０．０乃至６０．０Ｗｔ％、酸
化鉛２０．０乃至４０．０Ｗｔ％、ナトリウム、カリウ
ムの酸化物の少なくとも１種１０．０乃至２０．０Ｗｔ
％から成るガラスで形成したことを特徴とする半導体素
子収納用パッケージ。In a semiconductor device storage package in which external lead terminals are attached via a glass member to an insulating container having a cavity for accommodating a semiconductor device inside, the insulating container is made of a forsterite sintered body or a zirconia sintered body. The external lead terminal is a sintered body with a magnetic permeability of 150 (CGS) or less,
A metal with a thermal expansion coefficient of 95 to 110 x 10^-^7/°C, and a glass member made of at least 30.0 to 60.0 Wt% of silica, 20.0 to 40.0 Wt% of lead oxide, and at least oxides of sodium and potassium. Type 1 10.0 to 20.0Wt
A package for storing semiconductor elements, characterized in that it is formed of glass consisting of %.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1308611A JP2742614B2 (en) | 1989-11-27 | 1989-11-27 | Package for storing semiconductor elements |
| US07/574,470 US5140109A (en) | 1989-08-25 | 1990-08-27 | Container package for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1308611A JP2742614B2 (en) | 1989-11-27 | 1989-11-27 | Package for storing semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03167862A true JPH03167862A (en) | 1991-07-19 |
| JP2742614B2 JP2742614B2 (en) | 1998-04-22 |
Family
ID=17983129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1308611A Expired - Lifetime JP2742614B2 (en) | 1989-08-25 | 1989-11-27 | Package for storing semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2742614B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110033971A (en) * | 2018-08-31 | 2019-07-19 | 天津安捷公共设施服务有限公司 | A kind of low-tension switch cabinet linkage mechanism |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50146899A (en) * | 1974-05-16 | 1975-11-25 | ||
| JPS53123080A (en) * | 1977-04-02 | 1978-10-27 | Ngk Insulators Ltd | Circuit substrate and ceramic package assembly and method of producing same |
| JPS55100239A (en) * | 1979-01-23 | 1980-07-31 | Asahi Glass Co Ltd | Seal bonding glass composition |
| JPS6265954A (en) * | 1985-09-18 | 1987-03-25 | Nippon Electric Glass Co Ltd | Borosilicate glass for sealing alumina |
| JPS63185318U (en) * | 1987-05-22 | 1988-11-29 | ||
| JPS645041A (en) * | 1987-06-29 | 1989-01-10 | Shinko Electric Ind Co | Manufacture of ceramic body having superconducting circuit pattern |
-
1989
- 1989-11-27 JP JP1308611A patent/JP2742614B2/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50146899A (en) * | 1974-05-16 | 1975-11-25 | ||
| JPS53123080A (en) * | 1977-04-02 | 1978-10-27 | Ngk Insulators Ltd | Circuit substrate and ceramic package assembly and method of producing same |
| JPS55100239A (en) * | 1979-01-23 | 1980-07-31 | Asahi Glass Co Ltd | Seal bonding glass composition |
| JPS6265954A (en) * | 1985-09-18 | 1987-03-25 | Nippon Electric Glass Co Ltd | Borosilicate glass for sealing alumina |
| JPS63185318U (en) * | 1987-05-22 | 1988-11-29 | ||
| JPS645041A (en) * | 1987-06-29 | 1989-01-10 | Shinko Electric Ind Co | Manufacture of ceramic body having superconducting circuit pattern |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110033971A (en) * | 2018-08-31 | 2019-07-19 | 天津安捷公共设施服务有限公司 | A kind of low-tension switch cabinet linkage mechanism |
| CN110033971B (en) * | 2018-08-31 | 2020-08-11 | 天津安捷物联科技股份有限公司 | Low-voltage switchgear linkage mechanism |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2742614B2 (en) | 1998-04-22 |
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